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    Semiconductor device
    1.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08754419B2

    公开(公告)日：2014-06-17

    申请号：US13171627

    申请日：2011-06-29

    申请人： Ken Nakata ,  Isao Makabe ,  Keiichi Yui ,  Takamitsu Kitamura

    发明人： Ken Nakata ,  Isao Makabe ,  Keiichi Yui ,  Takamitsu Kitamura

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

    摘要： A semiconductor device includes a Si substrate having a principal plane that is a crystal surface inclined at an off angle of 0.1 degrees or less with respect to a (111) plane, an AlN layer that is provided so as to contact the principal plane of the Si substrate and is configured so that an FWHM of a rocking curve of a (002) plane by x-ray diffraction is not greater than 2000 seconds, and a GaN-based semiconductor layer formed on the AlN layer.

    摘要翻译： 半导体器件包括具有相对于（111）面倾斜偏离0.1度以下的晶体面的主面的Si衬底，设置成与（111）面接触的主面的AlN层 Si衬底并且被配置为使得通过x射线衍射的（002）面的摆动曲线的FWHM不大于2000秒，以及形成在AlN层上的GaN基半导体层。

    Method for fabricating semiconductor device
    3.
    发明授权
    Method for fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08987015B2

    公开(公告)日：2015-03-24

    申请号：US13172403

    申请日：2011-06-29

    申请人： Keiichi Yui ,  Akira Furuya ,  Ken Nakata ,  Takamitsu Kitamura ,  Isao Makabe

    发明人： Keiichi Yui ,  Akira Furuya ,  Ken Nakata ,  Takamitsu Kitamura ,  Isao Makabe

    IPC分类号： H01L21/20 ,  H01L21/02 ,  C30B25/14 ,  C30B25/18 ,  C30B29/40

    CPC分类号： H01L21/0262 ,  C30B25/14 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02661

    摘要： A method for fabricating a semiconductor device includes performing thermal cleaning for a surface of a silicon substrate in an atmosphere including hydrogen under a condition that a thermal cleaning temperature is higher than or equal to 700° C. and is lower than or equal to 1060° C., and a thermal cleaning time is longer than or equal to 5 minutes and is shorter than or equal to 15 minutes; forming a first AlN layer on the substrate with a first V/III source ratio, the forming of the first AlN layer including supplying an Al source to the surface of the substrate without supplying a N source, and supplying both the Al source and the N source; forming a second AlN layer on the first AlN layer with a second V/III source ratio that is greater than the first ratio; and forming a GaN-based semiconductor layer on the second AlN layer.

    摘要翻译： 一种制造半导体器件的方法包括在热清洁温度高于或等于700℃且低于或等于1060°的条件下，在包括氢的气氛中对硅衬底的表面进行热清洗 热清洗时间长于或等于5分钟，并且短于或等于15分钟; 在所述衬底上以第一V / III源比形成第一AlN层，所述第一AlN层的形成包括在不提供N源的情况下向所述衬底的表面提供Al源，并且将Al源和N 资源; 在第一AlN层上以大于第一比例的第二V / III源比形成第二AlN层; 以及在所述第二AlN层上形成GaN基半导体层。

    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
    4.
    发明申请
    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20120003820A1

    公开(公告)日：2012-01-05

    申请号：US13171642

    申请日：2011-06-29

    申请人： Keiichi Yui ,  Isao Makabe ,  Ken Nakata ,  Takamitsu Kitamura ,  Akira Furuya

    发明人： Keiichi Yui ,  Isao Makabe ,  Ken Nakata ,  Takamitsu Kitamura ,  Akira Furuya

    IPC分类号： H01L21/20

    CPC分类号： H01L21/0254 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0262

    摘要： A method for fabricating a semiconductor device includes forming an AlN layer on a substrate made of silicon by supplying an Al source without supplying a N source and then supplying both the Al source and the N source, and forming a GaN-based semiconductor layer on the AlN layer after the forming of the AlN layer. The forming of the AlN layer grows the AlN layer so as to satisfy the following: 76500/x0.81y

    摘要翻译： 一种半导体器件的制造方法包括：在不提供N源的情况下，通过供给Al源，然后供给Al源极和N源，在硅基板上形成AlN层，并在其上形成GaN基半导体层 AlN层形成后形成AlN层。 AlN层的形成使AlN层生长以满足以下要求：76500 / x0.81y <53800 / x0.83其中x是AlN层的厚度，y是（002）的摇摆曲线的FWHM ）面。

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20120001194A1

    公开(公告)日：2012-01-05

    申请号：US13171627

    申请日：2011-06-29

    申请人： Ken Nakata ,  Isao Makabe ,  Keiichi Yui ,  Takamitsu Kitamura

    发明人： Ken Nakata ,  Isao Makabe ,  Keiichi Yui ,  Takamitsu Kitamura

    IPC分类号： H01L29/778

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

    摘要： A semiconductor device includes a Si substrate having a principal plane that is a crystal surface inclined at an off angle of 0.1 degrees or less with respect to a (111) plane, an AlN layer that is provided so as to contact the principal plane of the Si substrate and is configured so that an FWHM of a rocking curve of a (002) plane by x-ray diffraction is not greater than 2000 seconds, and a GaN-based semiconductor layer formed on the AlN layer.

    摘要翻译： 半导体器件包括具有相对于（111）面倾斜偏离0.1度以下的晶体面的主面的Si衬底，设置成与（111）面接触的主面的AlN层 Si衬底并且被配置为使得通过x射线衍射的（002）面的摆动曲线的FWHM不大于2000秒，以及形成在AlN层上的GaN基半导体层。

    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
    8.
    发明申请
    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20120003821A1

    公开(公告)日：2012-01-05

    申请号：US13172403

    申请日：2011-06-29

    申请人： Keiichi Yui ,  Akira Furuya ,  Ken Nakata ,  Takamitsu Kitamura ,  Isao Makabe

    发明人： Keiichi Yui ,  Akira Furuya ,  Ken Nakata ,  Takamitsu Kitamura ,  Isao Makabe

    IPC分类号： H01L21/20

    CPC分类号： H01L21/0262 ,  C30B25/14 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02661

    摘要： A method for fabricating a semiconductor device includes performing thermal cleaning for a surface of a silicon substrate in an atmosphere including hydrogen under a condition that a thermal cleaning temperature is higher than or equal to 700° C. and is lower than or equal to 1060° C., and a thermal cleaning time is longer than or equal to 5 minutes and is shorter than or equal to 15 minutes; forming a first AlN layer on the substrate with a first V/III source ratio, the forming of the first AlN layer including supplying an Al source to the surface of the substrate without supplying a N source, and supplying both the Al source and the N source; forming a second AlN layer on the first AlN layer with a second V/III source ratio that is greater than the first ratio; and forming a GaN-based semiconductor layer on the second AlN layer.

    摘要翻译： 一种制造半导体器件的方法包括在热清洁温度高于或等于700℃且低于或等于1060°的条件下，在包括氢的气氛中对硅衬底的表面进行热清洗 热清洗时间长于或等于5分钟，并且短于或等于15分钟; 在所述衬底上以第一V / III源比形成第一AlN层，所述第一AlN层的形成包括在不提供N源的情况下向所述衬底的表面提供Al源，并且将Al源和N 资源; 在第一AlN层上以大于第一比例的第二V / III源比形成第二AlN层; 以及在所述第二AlN层上形成GaN基半导体层。