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    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08754419B2

    公开(公告)日：2014-06-17

    申请号：US13171627

    申请日：2011-06-29

    申请人： Ken Nakata ,  Isao Makabe ,  Keiichi Yui ,  Takamitsu Kitamura

    发明人： Ken Nakata ,  Isao Makabe ,  Keiichi Yui ,  Takamitsu Kitamura

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

    摘要： A semiconductor device includes a Si substrate having a principal plane that is a crystal surface inclined at an off angle of 0.1 degrees or less with respect to a (111) plane, an AlN layer that is provided so as to contact the principal plane of the Si substrate and is configured so that an FWHM of a rocking curve of a (002) plane by x-ray diffraction is not greater than 2000 seconds, and a GaN-based semiconductor layer formed on the AlN layer.

    摘要翻译： 半导体器件包括具有相对于（111）面倾斜偏离0.1度以下的晶体面的主面的Si衬底，设置成与（111）面接触的主面的AlN层 Si衬底并且被配置为使得通过x射线衍射的（002）面的摆动曲线的FWHM不大于2000秒，以及形成在AlN层上的GaN基半导体层。

    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
    5.
    发明申请
    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20120003821A1

    公开(公告)日：2012-01-05

    申请号：US13172403

    申请日：2011-06-29

    申请人： Keiichi Yui ,  Akira Furuya ,  Ken Nakata ,  Takamitsu Kitamura ,  Isao Makabe

    发明人： Keiichi Yui ,  Akira Furuya ,  Ken Nakata ,  Takamitsu Kitamura ,  Isao Makabe

    IPC分类号： H01L21/20

    CPC分类号： H01L21/0262 ,  C30B25/14 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02661

    摘要： A method for fabricating a semiconductor device includes performing thermal cleaning for a surface of a silicon substrate in an atmosphere including hydrogen under a condition that a thermal cleaning temperature is higher than or equal to 700° C. and is lower than or equal to 1060° C., and a thermal cleaning time is longer than or equal to 5 minutes and is shorter than or equal to 15 minutes; forming a first AlN layer on the substrate with a first V/III source ratio, the forming of the first AlN layer including supplying an Al source to the surface of the substrate without supplying a N source, and supplying both the Al source and the N source; forming a second AlN layer on the first AlN layer with a second V/III source ratio that is greater than the first ratio; and forming a GaN-based semiconductor layer on the second AlN layer.

    摘要翻译： 一种制造半导体器件的方法包括在热清洁温度高于或等于700℃且低于或等于1060°的条件下，在包括氢的气氛中对硅衬底的表面进行热清洗 热清洗时间长于或等于5分钟，并且短于或等于15分钟; 在所述衬底上以第一V / III源比形成第一AlN层，所述第一AlN层的形成包括在不提供N源的情况下向所述衬底的表面提供Al源，并且将Al源和N 资源; 在第一AlN层上以大于第一比例的第二V / III源比形成第二AlN层; 以及在所述第二AlN层上形成GaN基半导体层。

    Method for fabricating semiconductor device
    6.
    发明授权
    Method for fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08987015B2

    公开(公告)日：2015-03-24

    申请号：US13172403

    申请日：2011-06-29

    申请人： Keiichi Yui ,  Akira Furuya ,  Ken Nakata ,  Takamitsu Kitamura ,  Isao Makabe

    发明人： Keiichi Yui ,  Akira Furuya ,  Ken Nakata ,  Takamitsu Kitamura ,  Isao Makabe

    IPC分类号： H01L21/20 ,  H01L21/02 ,  C30B25/14 ,  C30B25/18 ,  C30B29/40

    CPC分类号： H01L21/0262 ,  C30B25/14 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02661

    摘要： A method for fabricating a semiconductor device includes performing thermal cleaning for a surface of a silicon substrate in an atmosphere including hydrogen under a condition that a thermal cleaning temperature is higher than or equal to 700° C. and is lower than or equal to 1060° C., and a thermal cleaning time is longer than or equal to 5 minutes and is shorter than or equal to 15 minutes; forming a first AlN layer on the substrate with a first V/III source ratio, the forming of the first AlN layer including supplying an Al source to the surface of the substrate without supplying a N source, and supplying both the Al source and the N source; forming a second AlN layer on the first AlN layer with a second V/III source ratio that is greater than the first ratio; and forming a GaN-based semiconductor layer on the second AlN layer.

    摘要翻译： 一种制造半导体器件的方法包括在热清洁温度高于或等于700℃且低于或等于1060°的条件下，在包括氢的气氛中对硅衬底的表面进行热清洗 热清洗时间长于或等于5分钟，并且短于或等于15分钟; 在所述衬底上以第一V / III源比形成第一AlN层，所述第一AlN层的形成包括在不提供N源的情况下向所述衬底的表面提供Al源，并且将Al源和N 资源; 在第一AlN层上以大于第一比例的第二V / III源比形成第二AlN层; 以及在所述第二AlN层上形成GaN基半导体层。

    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
    7.
    发明申请
    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20120003820A1

    公开(公告)日：2012-01-05

    申请号：US13171642

    申请日：2011-06-29

    申请人： Keiichi Yui ,  Isao Makabe ,  Ken Nakata ,  Takamitsu Kitamura ,  Akira Furuya

    发明人： Keiichi Yui ,  Isao Makabe ,  Ken Nakata ,  Takamitsu Kitamura ,  Akira Furuya

    IPC分类号： H01L21/20

    CPC分类号： H01L21/0254 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0262

    摘要： A method for fabricating a semiconductor device includes forming an AlN layer on a substrate made of silicon by supplying an Al source without supplying a N source and then supplying both the Al source and the N source, and forming a GaN-based semiconductor layer on the AlN layer after the forming of the AlN layer. The forming of the AlN layer grows the AlN layer so as to satisfy the following: 76500/x0.81y

    摘要翻译： 一种半导体器件的制造方法包括：在不提供N源的情况下，通过供给Al源，然后供给Al源极和N源，在硅基板上形成AlN层，并在其上形成GaN基半导体层 AlN层形成后形成AlN层。 AlN层的形成使AlN层生长以满足以下要求：76500 / x0.81y <53800 / x0.83其中x是AlN层的厚度，y是（002）的摇摆曲线的FWHM ）面。

    SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20120001194A1

    公开(公告)日：2012-01-05

    申请号：US13171627

    申请日：2011-06-29

    申请人： Ken Nakata ,  Isao Makabe ,  Keiichi Yui ,  Takamitsu Kitamura

    发明人： Ken Nakata ,  Isao Makabe ,  Keiichi Yui ,  Takamitsu Kitamura

    IPC分类号： H01L29/778

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

    摘要： A semiconductor device includes a Si substrate having a principal plane that is a crystal surface inclined at an off angle of 0.1 degrees or less with respect to a (111) plane, an AlN layer that is provided so as to contact the principal plane of the Si substrate and is configured so that an FWHM of a rocking curve of a (002) plane by x-ray diffraction is not greater than 2000 seconds, and a GaN-based semiconductor layer formed on the AlN layer.

    摘要翻译： 半导体器件包括具有相对于（111）面倾斜偏离0.1度以下的晶体面的主面的Si衬底，设置成与（111）面接触的主面的AlN层 Si衬底并且被配置为使得通过x射线衍射的（002）面的摆动曲线的FWHM不大于2000秒，以及形成在AlN层上的GaN基半导体层。

    Electrostatic chuck and method of manufacturing semiconductor device
    9.
    发明授权
    Electrostatic chuck and method of manufacturing semiconductor device 有权
    静电卡盘及制造半导体装置的方法

    公开(公告)号：US09543182B2

    公开(公告)日：2017-01-10

    申请号：US13305139

    申请日：2011-11-28

    申请人： Akira Furuya ,  Takamitsu Kitamura

    发明人： Akira Furuya ,  Takamitsu Kitamura

    IPC分类号： H01L21/683

    CPC分类号： H01L21/6833

    摘要： An electrostatic chuck device including: a plurality of adsorption areas having an electrode generating electrostatic attractive force; and a control portion controlling the electrostatic attractive force against each of the plurality of the adsorption areas independently of other adsorption areas.

    摘要翻译： 一种静电吸盘装置，包括：具有产生静电吸引力的电极的多个吸附区域; 以及控制部分，其独立于其他吸附区域控制对所述多个吸附区域中的每一个的静电吸引力。

    ELECTROSTATIC CHUCK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    10.
    发明申请
    ELECTROSTATIC CHUCK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    静电芯片及制造半导体器件的方法

    公开(公告)号：US20120134065A1

    公开(公告)日：2012-05-31

    申请号：US13305139

    申请日：2011-11-28

    申请人： Akira Furuya ,  Takamitsu Kitamura

    发明人： Akira Furuya ,  Takamitsu Kitamura

    IPC分类号： H01L21/687 ,  H01L21/50

    CPC分类号： H01L21/6833

    摘要： An electrostatic chuck device including: a plurality of adsorption areas having an electrode generating electrostatic attractive force; and a control portion controlling the electrostatic attractive force against each of the plurality of the adsorption areas independently of other adsorption areas.

    摘要翻译： 一种静电吸盘装置，包括：具有产生静电吸引力的电极的多个吸附区域; 以及控制部分，其独立于其他吸附区域控制对所述多个吸附区域中的每一个的静电吸引力。