公开(公告)号：US08357940B2

公开(公告)日：2013-01-22

申请号：US12958605

申请日：2010-12-02

申请人： Isao Suzumura ,  Yoshiaki Toyota ,  Mieko Matsumura

发明人： Isao Suzumura ,  Yoshiaki Toyota ,  Mieko Matsumura

IPC分类号： H01L29/04

CPC分类号： H01L29/66765 ,  H01L27/1248 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/78678 ,  H01L29/78696

摘要： A bottom gate-type thin film transistor includes a gate insulating film, an interlayer insulating film formed on the gate insulating film, having an opening which is formed in a formation region of a gate electrode, and a semiconductor film formed on the interlayer insulating film so as to cover the opening. The interlayer insulating film contains nitrides in an amount larger than that in the gate insulating film, and the semiconductor film includes a microcrystalline semiconductor film or a polycrystalline semiconductor film formed on semiconductor crystalline nuclei which are formed on the gate insulating film and the interlayer insulating film and contain at least Ge.

摘要翻译： 底栅型薄膜晶体管包括栅极绝缘膜，形成在栅极绝缘膜上的层间绝缘膜，具有形成在栅电极的形成区域中的开口，以及形成在层间绝缘膜上的半导体膜 以覆盖开幕。 层间绝缘膜含有比栅极绝缘膜大的氮化物，并且半导体膜包括在栅绝缘膜和层间绝缘膜上形成的形成在半导体晶核上的微晶半导体膜或多晶半导体膜 并至少含有Ge。

公开(公告)号：US08344382B2

公开(公告)日：2013-01-01

申请号：US13001428

申请日：2009-06-26

申请人： Junichi Hanna ,  Isao Suzumura ,  Mieko Matsumura ,  Mutsuko Hatano ,  Kenichi Onisawa ,  Masatoshi Wakagi ,  Etsuko Nishimura ,  Akiko Kagatsume

发明人： Junichi Hanna ,  Isao Suzumura ,  Mieko Matsumura ,  Mutsuko Hatano ,  Kenichi Onisawa ,  Masatoshi Wakagi ,  Etsuko Nishimura ,  Akiko Kagatsume

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L27/1277 ,  H01L27/1281 ,  H01L27/3262 ,  H01L29/66742 ,  H01L29/78687

摘要： Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.

摘要翻译： 提供了即使在450℃以下的低温反应性热CVD法中也能够使半导体晶体核沉积在氧化硅膜等绝缘膜上的方法。 作为其一种方法，在绝缘基板上形成第一半导体膜，然后在第一半导体膜的部分上形成半导体晶体核，并且同时形成第一半导体膜，而不是形成半导体晶体核的区域及其周边 通过蚀刻去除。 此后，使用半导体晶体核作为晶种形成第二半导体膜。

公开(公告)号：US20110108841A1

公开(公告)日：2011-05-12

申请号：US13001428

申请日：2009-06-26

申请人： Junichi Hanna ,  Isao Suzumura ,  Mieko Matsumura ,  Mutsuko Hatano ,  Kenichi Onisawa ,  Masatoshi Wakagi ,  Etsuko Nishimura ,  Akiko Kagatsume

发明人： Junichi Hanna ,  Isao Suzumura ,  Mieko Matsumura ,  Mutsuko Hatano ,  Kenichi Onisawa ,  Masatoshi Wakagi ,  Etsuko Nishimura ,  Akiko Kagatsume

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L27/1277 ,  H01L27/1281 ,  H01L27/3262 ,  H01L29/66742 ,  H01L29/78687

摘要： Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.

摘要翻译： 提供了即使在450℃以下的低温反应性热CVD法中也能够使半导体晶体核沉积在氧化硅膜等绝缘膜上的方法。 作为其一种方法，在绝缘基板上形成第一半导体膜，然后在第一半导体膜的部分上形成半导体晶体核，并且同时形成第一半导体膜，而不是形成半导体晶体核的区域及其周边 通过蚀刻去除。 此后，使用半导体晶体核作为晶种形成第二半导体膜。

公开(公告)号：US20090032824A1

公开(公告)日：2009-02-05

申请号：US12219435

申请日：2008-07-22

申请人： Isao Suzumura ,  Yoshiaki Toyota

发明人： Isao Suzumura ,  Yoshiaki Toyota

IPC分类号： H01L33/00

CPC分类号： H01L27/14643 ,  G09G3/20 ,  H01L27/1214 ,  H01L27/14692

摘要： An image displaying device having multiple photosensing devices have successfully suppressed a leakage current from each photosensing device and improved the S/N ratio. In the image displaying device, pixels and photosensing devices are disposed as pairs in a matrix pattern on a substrate. Each of the pixels and each of the photosensing devices are driven independently. Each photosensing device includes a semiconductor layer that is a photoelectric conversion layer connected to at least a first electrode and a second electrode. The contact surfaces of the first and second electrodes with respect to the semiconductor layer are disposed so that their center axes are separated from each other.

摘要翻译： 具有多个感光装置的图像显示装置成功地抑制了来自每个感光装置的泄漏电流并提高了S / N比。 在图像显示装置中，像素和感光装置成对地以矩阵形式设置在基板上。 每个像素和每个光敏器件都是独立驱动的。 每个感光装置包括半导体层，其是连接到至少第一电极和第二电极的光电转换层。 第一和第二电极相对于半导体层的接触表面被设置成使得它们的中心轴彼此分离。

公开(公告)号：US07948587B2

公开(公告)日：2011-05-24

申请号：US12203966

申请日：2008-09-04

申请人： Daisuke Sonoda ,  Takahiro Ochiai ,  Isao Suzumura

发明人： Daisuke Sonoda ,  Takahiro Ochiai ,  Isao Suzumura

IPC分类号： G02F1/1335 ,  G02F1/1343

CPC分类号： G02F1/134363 ,  G02F1/133553 ,  G02F1/13439 ,  G02F2203/03

摘要： Reflective electrodes having unevenness are formed on a resin layer of a TFT substrate. A coating-type ITO film having a film thickness of 0.5 μm to 1 μm which constitute a pixel electrode is applied to the reflective electrode. A surface of the coating-type ITO film is leveled. A capacitive insulation film is formed on the pixel electrode, and a comb-teeth-shaped common electrode is formed on the capacitive insulation film. When a voltage is applied between the common electrode and the pixel electrode, liquid crystal is controlled by a leaked electric field. Since the common electrode is formed in a planar plane, a thickness of a liquid crystal layer can be made uniform.

摘要翻译： 在TFT基板的树脂层上形成具有凹凸的反射电极。 构成像素电极的膜厚为0.5μm〜1μm的被覆型ITO膜被施加到反射电极。 涂覆型ITO膜的表面平整。 在像素电极上形成电容绝缘膜，在电容绝缘膜上形成梳齿形的公共电极。 当在公共电极和像素电极之间施加电压时，通过泄漏的电场来控制液晶。 由于公共电极形成在平面内，所以可以使液晶层的厚度均匀。

公开(公告)号：US20060154450A1

公开(公告)日：2006-07-13

申请号：US11329107

申请日：2006-01-11

申请人： Isao Suzumura ,  Katsuya Oda

发明人： Isao Suzumura ,  Katsuya Oda

IPC分类号： H01L21/20

CPC分类号： H01L29/1054 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/66242 ,  H01L29/66431 ,  H01L29/78

摘要： A manufacturing method of a semiconductor device in which the oxygen and carbon concentrations are reduced at the interface of each layer making up the semiconductor multilayer film. A first semiconductor layer is formed on a single-crystal substrate in a first reactor; the substrate is transferred from the first reactor to a second reactor through a transfer chamber; and a second semiconductor layer is formed on the first semiconductor layer in the second reactor. During substrate transfer, hydrogen is supplied when the number of hydrogen atoms bonding with the surface atoms of the first semiconductor layer is less than the number of surface atoms of the first semiconductor layer, and the supply of hydrogen is stopped when the number of hydrogen atoms bonding with the surface atoms of the first semiconductor layer is greater than the number of surface atoms of the first semiconductor layer.

摘要翻译： 在构成半导体多层膜的各层的界面处，氧和碳浓度降低的半导体装置的制造方法。 在第一反应器中的单晶衬底上形成第一半导体层; 基板通过传送室从第一反应器转移到第二反应器; 并且在第二反应器中的第一半导体层上形成第二半导体层。 在衬底转印期间，当与第一半导体层的表面原子键合的氢原子的数量小于第一半导体层的表面原子数时，供给氢，当氢原子数 与第一半导体层的表面原子的键合大于第一半导体层的表面原子数。

公开(公告)号：US06667489B2

公开(公告)日：2003-12-23

申请号：US10299837

申请日：2002-11-20

申请人： Isao Suzumura ,  Katsuya Oda ,  Katsuyoshi Washio

发明人： Isao Suzumura ,  Katsuya Oda ,  Katsuyoshi Washio

IPC分类号： H01L2906

CPC分类号： H01L29/66242 ,  H01L29/7378

摘要： A high-speed heterojunction bipolar transistor in a large injection of electrons from the emitter and a method for production thereof. In a typical example of the SiGeC heterojunction bipolar transistor, the collector has a layer of n-type single-crystal Si and a layer of n-type single-crystal SiGe, the base is a layer of heavily doped p-type single-crystal SiGeC, and the emitter is a layer of n-type single-crystal Si. At the heterointerface between the layer of n-type single-crystal SiGe and the layer of p-type single-crystal SiGeC, the bandgap of the p-type single-crystal SiGeC is larger than that of the layer of n-type single-crystal SiGe. Even though the effective neutral base expands due to an increase in electrons injected from the emitter, no energy barrier occurs in the conduction band at the heterointerface between the layer of n-type single-crystal SiGe and the layer of p-type single-crystal SiGeC. Thus, the diffusion of electrons is not inhibited and it is possible to realize high-speed heterojunction bipolar transistors even in the high injection state.

摘要翻译： 从发射极大量注入电子的高速异质结双极晶体管及其制造方法。 在SiGeC异质结双极晶体管的典型实例中，集电体具有n型单晶Si层和n型单晶SiGe层，基极是重掺杂p型单晶层 SiGeC，发射极是n型单晶Si层。 在n型单晶SiGe层和p型单晶SiGeC层之间的异质界面处，p型单晶SiGeC的带隙大于n型单晶SiGeC层的带隙， 水晶SiGe。 即使有效的中性碱基由于从发射体注入的电子的增加而扩大，在n型单晶SiGe层与p型单晶层之间的异质界面的导带中也不发生能量势垒 SiGeC。 因此，电子的扩散不被抑制，即使在高注入状态下也可以实现高速异质结双极晶体管。

公开(公告)号：US08897937B2

公开(公告)日：2014-11-25

申请号：US13706759

申请日：2012-12-06

申请人： Hisanosuke Kawada ,  Soichiro Bando ,  Hideaki Ezaki ,  Isao Suzumura ,  Yuji Katsuyama ,  Yoshiaki Wakabayashi

发明人： Hisanosuke Kawada ,  Soichiro Bando ,  Hideaki Ezaki ,  Isao Suzumura ,  Yuji Katsuyama ,  Yoshiaki Wakabayashi

IPC分类号： B60T8/17 ,  B60L3/10 ,  B61C17/12

CPC分类号： B61C17/12 ,  Y02T10/7258 ,  Y02T30/10

摘要： A railcar control apparatus comprises a synchronous slide/slip detector which determines that the axles are synchronously sliding/slipping if an absolute value of axle's speed difference is less than a synchronous slide/slip speed difference threshold and an absolute value of axle's acceleration is greater than a predetermined synchronous slide/slip acceleration threshold.

摘要翻译： 轨道车控制装置包括同步滑动/滑移检测器，其如果轴的速度差的绝对值小于同步滑移/滑移速度差阈值并且轴的加速度的绝对值大于轴的速度差，则确定轴同步滑动/滑动 预定的同步滑动/滑移加速度阈值。

公开(公告)号：US07095043B2

公开(公告)日：2006-08-22

申请号：US10790190

申请日：2004-03-02

申请人： Katsuya Oda ,  Nobuyuki Sugii ,  Makoto Miura ,  Isao Suzumura ,  Katsuyoshi Washio

发明人： Katsuya Oda ,  Nobuyuki Sugii ,  Makoto Miura ,  Isao Suzumura ,  Katsuyoshi Washio

IPC分类号： H01L29/06 ,  H01L31/0328

CPC分类号： H01L29/66068 ,  H01L21/823807 ,  H01L27/0922 ,  H01L29/1054 ,  H01L29/1608

摘要： An (SiGe)C layer having a stoichiometric ratio of about 1:1 is locally formed on an Si layer, a large forbidden band width semiconductor device is prepared inside the layered structure thereof and an Si semiconductor integrated circuit is formed in the regions not formed with the layered structure, whereby high frequency high power operation of the device is enabled by the large forbidden band width semiconductor device and high performance is attained by hybridization of the Si integrated circuit.

摘要翻译： 在Si层上局部地形成化学计量比为约1:1的An（SiGe）C层，在其层叠结构内制备大的禁带宽半导体器件，并且在未形成的区域中形成Si半导体集成电路 具有分层结构，由此通过大的禁带宽半导体器件能够实现器件的高频高功率操作，并且通过Si集成电路的杂交获得高性能。

公开(公告)号：US07863162B2

公开(公告)日：2011-01-04

申请号：US11329107

申请日：2006-01-11

申请人： Isao Suzumura ,  Katsuya Oda

发明人： Isao Suzumura ,  Katsuya Oda

IPC分类号： H01L21/20

CPC分类号： H01L29/1054 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/66242 ,  H01L29/66431 ,  H01L29/78

摘要： A manufacturing method of a semiconductor device in which the oxygen and carbon concentrations are reduced at the interface of each layer making up the semiconductor multilayer film. A first semiconductor layer is formed on a single-crystal substrate in a first reactor; the substrate is transferred from the first reactor to a second reactor through a transfer chamber; and a second semiconductor layer is formed on the first semiconductor layer in the second reactor. During substrate transfer, hydrogen is supplied when the number of hydrogen atoms bonding with the surface atoms of the first semiconductor layer is less than the number of surface atoms of the first semiconductor layer, and the supply of hydrogen is stopped when the number of hydrogen atoms bonding with the surface atoms of the first semiconductor layer is greater than the number of surface atoms of the first semiconductor layer.

摘要翻译： 在构成半导体多层膜的各层的界面处，氧和碳浓度降低的半导体装置的制造方法。 在第一反应器中的单晶衬底上形成第一半导体层; 基板通过传送室从第一反应器转移到第二反应器; 并且在第二反应器中的第一半导体层上形成第二半导体层。 在衬底转印期间，当与第一半导体层的表面原子键合的氢原子的数量小于第一半导体层的表面原子数时，供给氢，当氢原子数 与第一半导体层的表面原子的键合大于第一半导体层的表面原子数。