公开(公告)号：US5413958A

公开(公告)日：1995-05-09

申请号：US153376

申请日：1993-11-16

申请人： Issei Imahashi ,  Kiichi Hama ,  Jiro Hata

发明人： Issei Imahashi ,  Kiichi Hama ,  Jiro Hata

IPC分类号： C23C16/24 ,  G02F1/1362 ,  H01L21/20 ,  H01L21/26

CPC分类号： H01L21/02422 ,  C23C16/24 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02686 ,  G02F1/13454 ,  Y10S148/006 ,  Y10S148/09 ,  Y10S148/15

摘要： An amorphous silicon film is formed on a glass substrate by a CVD method, and then the island regions of the amorphous silicon film is changed to a plurality of polycrystalline silicon regions which are arranged in a line and apart with each other in a predetermined distanced by intermittently irradiating laser pulses each having the same dimensions as those of the island region onto the amorphous silicon film, using a laser beam irradiating section. Switching elements including the island regions as semiconductor regions are formed by etching and film-forming process to constitute a driving circuit section. The section is divided to gate driving circuit sections and source driving circuit sections for driving thin film transistors formed in a pixel region.

摘要翻译： 通过CVD法在玻璃基板上形成非晶硅膜，然后将非晶硅膜的岛状区域变化为多个多晶硅区域，这些多晶硅区域以规定的间隔设置成一条线并相互隔开 使用激光束照射部分间歇地将具有与岛状区域相同的尺寸的激光脉冲照射到非晶硅膜上。 通过蚀刻和成膜处理形成包括岛状区域作为半导体区域的开关元件，构成驱动电路部。 该部分被分成用于驱动形成在像素区域中的薄膜晶体管的栅极驱动电路部分和源极驱动电路部分。

公开(公告)号：US5529630A

公开(公告)日：1996-06-25

申请号：US385929

申请日：1995-02-09

申请人： Issei Imahashi ,  Kiichi Hama ,  Jiro Hata

发明人： Issei Imahashi ,  Kiichi Hama ,  Jiro Hata

IPC分类号： C23C16/24 ,  G02F1/1362 ,  H01L21/20 ,  H01L21/26

CPC分类号： H01L21/02422 ,  C23C16/24 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02686 ,  G02F1/13454 ,  Y10S148/006 ,  Y10S148/09 ,  Y10S148/15

摘要： An amorphous silicon film is formed on a glass substrate by a CVD method, and then the island regions of the amorphous silicon film is changed to a plurality of polycrystalline silicon regions which are arranged in a line and apart with each other in a predetermined distanced by intermittently irradiating laser pulses each having the same dimensions as those of the island region onto the amorphous silicon film, using a laser beam irradiating section. Switching elements including the island regions as semiconductor regions are formed by etching and film-forming process to constitute a driving circuit section. The section is divided to gate driving circuit sections and source driving circuit sections for driving thin film transistors formed in a pixel region.

摘要翻译： 通过CVD法在玻璃基板上形成非晶硅膜，然后将非晶硅膜的岛状区域变化为多个多晶硅区域，这些多晶硅区域以规定的间隔设置成一条线并相互隔开 使用激光束照射部分间歇地将具有与岛状区域相同的尺寸的激光脉冲照射到非晶硅膜上。 通过蚀刻和成膜处理形成包括岛状区域作为半导体区域的开关元件，构成驱动电路部。 该部分被分成用于驱动形成在像素区域中的薄膜晶体管的栅极驱动电路部分和源极驱动电路部分。

公开(公告)号：USRE36371E

公开(公告)日：1999-11-02

申请号：US764205

申请日：1996-12-13

申请人： Issei Imahashi ,  Kiichi Hama ,  Jiro Hata

发明人： Issei Imahashi ,  Kiichi Hama ,  Jiro Hata

IPC分类号： C23C16/24 ,  C23C16/56 ,  G02F1/1362 ,  H01L21/20 ,  B05D3/06 ,  H01L21/461 ,  H01L21/306

CPC分类号： C23C16/24 ,  C23C16/56 ,  H01L21/2026 ,  G02F1/13454

摘要： In a method of forming a polycrystalline silicon film in a process of manufacturing an LCD, a hydrogenated amorphous silicon film is formed on a glass substrate by plasam CVD throughout areas serving as the pixel portion and driver unit of the LCD. A laser beam is radiated on a selected region of the film on the area serving as the driver unit. The energy of the laser beam is set such that hydrogen in the film is discharged without crystallizing the film and damaging the film. The energy of the laser beam is gradually increased to gradually discharge hydrogen from the film. The energy of the laser beam is finally set such that the film is transformed into a polycrystalline silicon film. The amorphous silicon film can be poly-crystallized without damaging the film by the discharge of hydrogen.

摘要翻译： 在制造LCD的过程中形成多晶硅膜的方法中，通过等离子体CVD在玻璃基板上形成氢化的非晶硅膜，作为LCD的像素部分和驱动单元。 在作为驱动器单元的区域上的膜的选定区域上照射激光束。 激光束的能量被设定为使得膜中的氢气不会使膜结晶而被排出并损坏膜。 激光束的能量逐渐增加，逐渐从膜中排出氢。 最终将激光束的能量设定为使得膜转变为多晶硅膜。 非晶硅膜可以多结晶而不会通过氢气的排出而损坏膜。

公开(公告)号：US5372836A

公开(公告)日：1994-12-13

申请号：US38621

申请日：1993-03-26

申请人： Issei Imahashi ,  Kiichi Hama ,  Jiro Hata

发明人： Issei Imahashi ,  Kiichi Hama ,  Jiro Hata

IPC分类号： C23C16/24 ,  C23C16/56 ,  G02F1/1362 ,  H01L21/20 ,  B05D3/06 ,  H01L21/461 ,  H01L21/302

CPC分类号： C23C16/24 ,  C23C16/56 ,  H01L21/2026 ,  G02F1/13454

摘要： In a method of forming a polycrystalline silicon film in a process of manufacturing an LCD, a hydrogenated amorphous silicon film is formed on a glass substrate by plasma CVD throughout areas serving as the pixel portion and driver unit of the LCD. A laser beam is radiated on a selected region of the film on the area serving as the driver unit. The energy of the laser beam is set such that hydrogen in the film is discharged without crystallizing the film and damaging the film. The energy of the laser beam is gradually increased to gradually discharge hydrogen from the film. The energy of the laser beam is finally set such that the film is transformed into a polycrystalline silicon film. The amorphous silicon film can be poly-crystallized without damaging the film by the discharge of hydrogen.

摘要翻译： 在制造LCD的过程中形成多晶硅膜的方法中，在用作LCD的像素部分和驱动单元的区域中，通过等离子体CVD在玻璃基板上形成氢化非晶硅膜。 在作为驱动器单元的区域上的膜的选定区域上照射激光束。 激光束的能量被设定为使得膜中的氢气不会使膜结晶而被排出并损坏膜。 激光束的能量逐渐增加，逐渐从膜中排出氢。 最终将激光束的能量设定为使得膜转变为多晶硅膜。 非晶硅膜可以多结晶而不会通过氢气的排出而损坏膜。

公开(公告)号：US5525159A

公开(公告)日：1996-06-11

申请号：US357423

申请日：1994-12-16

申请人： Kiichi Hama ,  Jiro Hata ,  Toshiaki Hongoh

发明人： Kiichi Hama ,  Jiro Hata ,  Toshiaki Hongoh

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4404 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/4586 ,  C23C16/466 ,  C23C16/50 ,  C23C16/505 ,  C23C16/5096 ,  H01J37/3211 ,  H01J37/3244 ,  H01J37/32449

摘要： A plasma CVD apparatus for forming a silicon film on an LCD substrate includes a container which is divided into process and upper chambers by a quartz partition plate. A work table on which the substrate is mounted is arranged in the process chamber and a lower electrode to which a high frequency potential is applied is arranged in the work table. First lower and second upper supply heads are arranged between the partition plate and the work table in the process chamber. SiH.sub.4 and H.sub.2 gas and He gases are supplied through the first and second supply heads. He gas is transformed into plasma while SiH.sub.4 and H.sub.2 gas is excited and decomposed by the plasma thus formed. Two coils are arranged in the upper chamber and high frequency voltages are applied to the coils to generate electromagnetic field to induce the transforming of He gas into plasma. High frequency voltages applied to the coils are the same in phase and directions of current flowing through adjacent portions of the coils are the same.

摘要翻译： 用于在LCD基板上形成硅膜的等离子体CVD装置包括通过石英隔板将其分为工艺和上室的容器。 安装有基板的工作台布置在处理室中，并且施加高频电位的下电极布置在工作台中。 第一下供应头和第二上供应头布置在处理室中的分隔板和工作台之间。 SiH4和H2气体和He气体通过第一和第二供应头供应。 He气体转化为等离子体，而SiH4和H2气体被等离子体激发并分解。 两个线圈布置在上部腔室中，并且高频电压施加到线圈以产生电磁场以诱导He气体转化为等离子体。 施加到线圈的高频电压的相位相同，并且流过线圈相邻部分的电流方向相同。

公开(公告)号：US5792261A

公开(公告)日：1998-08-11

申请号：US624102

申请日：1996-03-29

申请人： Kiichi Hama ,  Jiro Hata ,  Toshiaki Hongoh

发明人： Kiichi Hama ,  Jiro Hata ,  Toshiaki Hongoh

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4404 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/4586 ,  C23C16/466 ,  C23C16/50 ,  C23C16/505 ,  C23C16/5096 ,  H01J37/3211 ,  H01J37/3244 ,  H01J37/32449

摘要： A plasma CVD apparatus for forming a silicon film on an LCD substrate includes a container which is divided into process and upper chambers by a quartz partition plate. A work table on which the substrate is mounted is arranged in the process chamber and a lower electrode to which a high frequency potential is applied is arranged in the work table. First lower and second upper supply heads are arranged between the partition plate and the work table in the process chamber. SiH.sub.4 and H.sub.2 gas and He gases are supplied through the first and second supply heads. He gas is transformed into plasma while SiH.sub.4 and H.sub.2 gas is excited and decomposed by the plasma thus formed. Two coils are arranged in the upper chamber and high frequency voltages are applied to the coils to generate electromagnetic field to induce the transforming of He gas into plasma. High frequency voltages applied to the coils are the same in phase and directions of current flowing through adjacent portions of the coils are the same.

公开(公告)号：USRE39020E1

公开(公告)日：2006-03-21

申请号：US09478370

申请日：2000-02-16

申请人： Kiichi Hama ,  Jiro Hata ,  Toshiaki Hongoh

发明人： Kiichi Hama ,  Jiro Hata ,  Toshiaki Hongoh

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4404 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/4586 ,  C23C16/466 ,  C23C16/50 ,  C23C16/505 ,  C23C16/5096 ,  H01J37/3211 ,  H01J37/3244 ,  H01J37/32449

摘要： A plasma CVD apparatus for forming a silicon film on an LCD substrate includes a container which is divided into process and upper chambers by a quartz partition plate. A work table on which the substrate is mounted is arranged in the process chamber and a lower electrode to which a high frequency potential is applied is arranged in the work table. First lower and second upper supply heads are arranged between the partition plate and the work table in the process chamber. SiH4 and H2 gas and He gases are supplied through the first and second supply heads. He gas is transformed into plasma while SiH4 and H2 gas is excited and decomposed by the plasma thus formed. Two coils are arranged in the upper chamber and high frequency voltages are applied to the coils to generate electromagnetic field to induce the transforming of He gas into plasma. High frequency voltages applied to the coils are the same in phase and directions of current flowing through adjacent portions of the coils are the same.

摘要翻译： 用于在LCD基板上形成硅膜的等离子体CVD装置包括通过石英隔板将其分为工艺和上室的容器。 安装有基板的工作台布置在处理室中，并且施加高频电位的下电极布置在工作台中。 第一下供应头和第二上供应头布置在处理室中的分隔板和工作台之间。 SiH 4和H 2气体，He气体通过第一和第二供应头供应。 He气被转化为等离子体，而SiH 4和H 2气体被等离子体激发并分解。 两个线圈布置在上部腔室中，并且高频电压施加到线圈以产生电磁场以诱导He气体转化为等离子体。 施加到线圈的高频电压的相位相同，并且流过线圈相邻部分的电流方向相同。

公开(公告)号：US20050044204A1

公开(公告)日：2005-02-24

申请号：US10929949

申请日：2004-08-31

申请人： Hiroshi Nishikawa ,  Youichi Araki ,  Kiichi Hama

发明人： Hiroshi Nishikawa ,  Youichi Araki ,  Kiichi Hama

IPC分类号： G05B19/418 ,  G05B23/02 ,  G06Q30/02 ,  G06Q30/06 ,  G06Q50/00 ,  G06Q50/10 ,  G06Q50/34 ,  G06F15/16 ,  G06F15/173 ,  H04M3/22

CPC分类号： G06Q10/10 ,  G06Q10/20 ,  G06Q30/02 ,  G06Q30/0207 ,  G06Q30/0208 ,  G06Q30/0212

摘要： A computer terminal 110 connected to a manufacturing apparatus 120 as an object of the maintenance management is connected to a server machine 210 providing a maintenance management service by a network 500, enabling bi-directional communication. The computer terminal transmits status information on an apparatus as an object of the maintenance management to the server machine in response to a status information transmission request received from a server at every predetermined interval. The server machine includes a status point information management database for storing status points generated according to status information and determines whether status information has been received at every predetermined interval. Each time it is determined that status information is received, a predetermined point is added so as to update the status points of the status point information management database. This can encourage a customer to perform maintenance by him/herself and reduce workload of a serviceman.

摘要翻译： 连接到作为维护管理对象的制造装置120的计算机终端110连接到由网络500提供维护管理服务的服务器机器210，从而实现双向通信。 计算机终端响应于从每个预定间隔从服务器接收到的状态信息发送请求，将关于作为维护管理对象的装置的状态信息发送到服务器机器。 服务器机器包括状态点信息管理数据库，用于存储根据状态信息生成的状态点，并且确定是否已经以每个预定间隔接收到状态信息。 每次确定接收到状态信息时，添加预定点以更新状态点信息管理数据库的状态点。 这可以鼓励客户自己进行维护，减少维修人员的工作量。

公开(公告)号：US07698149B2

公开(公告)日：2010-04-13

申请号：US10929949

申请日：2004-08-31

申请人： Hiroshi Nishikawa ,  Youichi Araki ,  Kiichi Hama

发明人： Hiroshi Nishikawa ,  Youichi Araki ,  Kiichi Hama

IPC分类号： G06Q10/00 ,  G06F15/173

CPC分类号： G06Q10/10 ,  G06Q10/20 ,  G06Q30/02 ,  G06Q30/0207 ,  G06Q30/0208 ,  G06Q30/0212

摘要： A computer terminal 110 connected to a manufacturing apparatus 120 as an object of the maintenance management is connected to a server machine 210 providing a maintenance management service by a network 500, enabling bi-directional communication. The computer terminal transmits status information on an apparatus as an object of the maintenance management to the server machine in response to a status information transmission request received from a server at every predetermined interval. The server machine includes a status point information management database for storing status points generated according to status information and determines whether status information has been received at every predetermined interval. Each time it is determined that status information is received, a predetermined point is added so as to update the status points of the status point information management database. This can encourage a customer to perform maintenance by him/herself and reduce workload of a serviceman.

摘要翻译： 连接到作为维护管理对象的制造装置120的计算机终端110连接到由网络500提供维护管理服务的服务器机器210，从而实现双向通信。 计算机终端响应于从每个预定间隔从服务器接收到的状态信息发送请求，将关于作为维护管理对象的装置的状态信息发送到服务器机器。 服务器机器包括状态点信息管理数据库，用于存储根据状态信息生成的状态点，并且确定是否已经以每个预定间隔接收到状态信息。 每次确定接收到状态信息时，添加预定点以更新状态点信息管理数据库的状态点。 这可以鼓励客户自己进行维护，减少维修人员的工作量。

公开(公告)号：US6149760A

公开(公告)日：2000-11-21

申请号：US173179

申请日：1998-10-15

申请人： Kiichi Hama

发明人： Kiichi Hama

IPC分类号： H01J37/32 ,  H05H1/46 ,  H05H1/00 ,  C23C16/00

CPC分类号： H01J37/321 ,  H05H1/46

摘要： An inductively coupled type dry etching apparatus has a spiral RF antenna disposed on the ceiling wall of a process chamber. A susceptor is arranged in the process chamber, for mounting a semiconductor wafer thereon. The ceiling wall has upper and lower layers with a dielectric matrix, and a conductive Faraday shield layer sandwiched therebetween. The Faraday shield layer has a plurality of slits radially arranged. The matrix of the upper and lower layers and the Faraday shield layer are set to have coefficients of thermal expansion close to each other, and/or the Faraday shield layer is set to have a very small thickness.

摘要翻译： 电感耦合型干式蚀刻装置具有设置在处理室的顶壁上的螺旋型RF天线。 在处理室中布置有感受体，用于在其上安装半导体晶片。 顶壁具有介电矩阵的上下层和夹在其间的导电法拉第屏蔽层。 法拉第屏蔽层具有径向布置的多个狭缝。 上层和下层和法拉第屏蔽层的矩阵被设置为具有彼此接近的热膨胀系数，和/或法拉第屏蔽层被设定为具有非常小的厚度。