公开(公告)号：US06431114B1

公开(公告)日：2002-08-13

申请号：US09659340

申请日：2000-09-12

申请人： Issei Imahashi ,  Nobuo Ishii ,  Satoru Kawakami ,  Yoshinobu Kawai ,  Yoko Ueda

发明人： Issei Imahashi ,  Nobuo Ishii ,  Satoru Kawakami ,  Yoshinobu Kawai ,  Yoko Ueda

IPC分类号： C23C1600

CPC分类号： H01J37/09 ,  H01J37/32192 ,  H01J37/32678

摘要： The present invention aims to decrease reflected waves in a vacuum chamber to suppress standing waves, thereby easily controlling a plasma density so that uniform treatment can be performed. An electromagnetic wave absorber 6 composed of a resistor such as carbon, a dielectric having a large dielectric loss, such as water, or a magnetic material such as ferrite-based ceramic, or a combination of these, is provided on an inner wall surface of a first vacuum chamber 21. Microwaves introduced from a waveguide 25 into the first vacuum chamber 21 via a transmissive window 23 are absorbed to the electromagnetic wave absorber 6 to suppress reflected waves, whereby a plasma density distribution with a nearly planned pattern is easily formed at an ECR point.

摘要翻译： 本发明旨在减少真空室中的反射波以抑制驻波，从而容易地控制等离子体密度，从而可以进行均匀的处理。 由诸如碳的电阻器，诸如水等介电损耗大的电介质或诸如铁氧体基陶瓷的磁性材料或其组合的电磁波吸收体6设置在内壁表面上 第一真空室21.经由透射窗23从波导管25引入第一真空室21的微波被吸收到电磁波吸收体6以抑制反射波，由此容易地形成具有接近计划的图案的等离子体密度分布 一个ECR点。

公开(公告)号：US06452400B1

公开(公告)日：2002-09-17

申请号：US09597654

申请日：2000-06-19

申请人： Yoshinobu Kawai ,  Yoko Ueda ,  Nobuo Ishii ,  Satoru Kawakami

发明人： Yoshinobu Kawai ,  Yoko Ueda ,  Nobuo Ishii ,  Satoru Kawakami

IPC分类号： G01N2762

CPC分类号： H05H1/0081

摘要： A probe (6) is brought into contact with a plasma produced by ionizing Ar gas, a saturation current (Ies2) at which current flowing through the probe is saturated when the potential of the probe is changed in a potential region where the potential of the probe is higher than a ground potential, and a saturation current (Iis2) at which current flowing through the probe is saturated when the potential of the probe is changed in a potential region where the potential of the probe is lower than the ground potential. Similarly, saturation currents (Ies2, Iis2) are measured by bringing the probe (6) into contact with a plasma produced by ionizing a mixed gas containing Ar gas and a process gas, such as C4F8 gas, and changing the potential of the probe (6). The negative ion density of the plasma produced by ionizing C4F8 gas is determined by using saturation current ratios (Iis1/Iis2, Ies1/Ies2).

摘要翻译： 使探针（6）与通过电离Ar气体产生的等离子体接触，当探针的电位在电位下变化的饱和电流（Ies2）时，饱和电流（Ies2）变化， 探针高于接地电位，并且当探头的电位在探针的电位低于地电位的电势区域中变化时，流过探头的电流饱和的饱和电流（Iis2）饱和。 类似地，通过使探针（6）与通过电离含有Ar气体的混合气体和诸如C 4 F 8气体的工艺气体产生的等离子体接触来测量饱和电流（Ies2，Iis2），并且改变探针的电位 6）。 通过使用饱和电流比（Iis1 / Iis2，Ies1 / Ies2）确定通过电离C4F8气体产生的等离子体的负离子密度。

公开(公告)号：US6066568A

公开(公告)日：2000-05-23

申请号：US75950

申请日：1998-05-12

申请人： Yoshinobu Kawai ,  Yoko Ueda ,  Nobuo Ishii ,  Satoru Kawakami ,  Hideaki Amano

发明人： Yoshinobu Kawai ,  Yoko Ueda ,  Nobuo Ishii ,  Satoru Kawakami ,  Hideaki Amano

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065

摘要： An electron density at an ECR point, which is spaced from a substrate to be treated and which faces the substrate, is set to be higher than or equal to 0.46 nc (nc: an upper limit side cut-off density of an X wave) and lower than nc. Thus, a high chevron distribution of electron density is formed in end portions of a magnetic field forming region, and a distribution of electron density having a lower peak value than those in the end portions is formed in a central portion of the magnetic field forming region. In this case, the periphery of a magnetic field crosses the inner wall of a vacuum chamber once between the ECR point and the substrate, and a space of one fourth or more of the wavelength of the X wave is formed between the periphery of the magnetic field and the inner wall of the vacuum chamber as the magnetic field runs downstream. Thus, it is possible to achieve an inplane uniform treatment when carrying out a treatment, such as a thin film deposition or etching, with ECR plasmas for a wafer.

摘要翻译： 与待处理的基板间隔开且面向基板的ECR点处的电子密度被设定为高于或等于0.46nc（nc：X波的上限侧截止密度） 并低于nc。 因此，在磁场形成区域的端部形成电子密度的高V形分布，并且在磁场形成区域的中心部分形成具有比端部部分低的峰值的电子密度分布 。 在这种情况下，在ECR点和基板之间磁场的周边与真空室的内壁交叉，X波的波长的四分之一以上的空间形成在磁性的周边之间 场和真空室的内壁随着磁场向下游流动。 因此，当进行用于晶片的ECR等离子体进行诸如薄膜沉积或蚀刻的处理时，可以实现内平面的均匀处理。

公开(公告)号：US5374327A

公开(公告)日：1994-12-20

申请号：US053353

申请日：1993-04-28

申请人： Issei Imahashi ,  Nobuo Ishii ,  Chishio Koshimizu

发明人： Issei Imahashi ,  Nobuo Ishii ,  Chishio Koshimizu

IPC分类号： H01L21/302 ,  C23F4/00 ,  G01N21/68 ,  H01L21/3065 ,  G01N21/00

CPC分类号： G01N21/68

摘要： HBr and Cl.sub.2 are used as etching gases and Ar is used as a carrier gas in an ECR etching apparatus in which a semiconductor wafer is processed. Light emitted from plasma generated is dispersed by first and second spectroscopes to detect intensities of those spectra of the plasma which have first and second wavelengths. Both of these spectra are selected from those of an Ar atom. A CPU compares a present value, which represents a ratio of the spectral intensities detected, with a selected value of the ratio previously stored, and adjusts the intensity of a magnetic field such that the present value becomes closer to the selected value. The adjustment of the magnetic field intensity is carried out by changing the value of a current applied to magnetic coils. The magnetic field intensity is a parameter for adjusting an electron temperature of the plasma, and thus, the electron temperature of the plasma is adjusted by adjusting the magnetic field intensity.

摘要翻译： HBr和Cl2用作蚀刻气体，Ar用作加工半导体晶片的ECR蚀刻装置中的载气。 由等离子体产生的光被第一和第二光谱分散，以检测具有第一和第二波长的等离子体的那些光谱的强度。 这两种光谱均选自Ar原子。 CPU将表示所检测的光谱强度的比率的当前值与先前存储的比率的选定值进行比较，并且调整磁场的强度，使得当前值变得更接近所选择的值。 通过改变施加到电磁线圈的电流的值来进行磁场强度的调整。 磁场强度是用于调整等离子体的电子温度的参数，因此通过调整磁场强度来调整等离子体的电子温度。

公开(公告)号：US5342472A

公开(公告)日：1994-08-30

申请号：US928428

申请日：1992-08-12

申请人： Issei Imahashi ,  Nobuo Ishii

发明人： Issei Imahashi ,  Nobuo Ishii

IPC分类号： H01J37/32 ,  H05H1/00

CPC分类号： H01J37/32238 ,  H01J37/32192 ,  H01J37/32678 ,  H01J37/32706

摘要： Microwave inlet ports are formed on a microwave transmission window above a plasma generation chamber. The distance from the microwave inlet ports to a support surface of a wafer support table is set to be an integer multiple of 1/2 the wavelength of the microwave. Upper and lower magnetic poles opposite to each other are arranged above and below the chamber to form a magnetic field having a uniform strength in the chamber. The strength of the magnetic field is set to be 865 Gauss as a value slightly deviating from 875 Gauss as a value satisfying ideal conditions of an electron cyclotron resonance at a microwave wavelength of 2.45 GHz. The electron energy is suppressed, and damage to the surface of a wafer can be suppressed in wafer surface processing using a plasma.

摘要翻译： 微波入口形成在等离子体产生室上方的微波传输窗口上。 从微波入口到晶片支撑台的支撑表面的距离设定为微波波长的1/2的整数倍。 彼此相对的上下磁极设置在室的上方和下方，以形成在室中具有均匀强度的磁场。 磁场的强度被设定为865高斯，作为微波波长为2.45GHz的电子回旋共振理想条件的值，稍微偏离875高斯的值。 抑制电子能量，并且可以在使用等离子体的晶片表面处理中抑制对晶片表面的损伤。

公开(公告)号：US5173641A

公开(公告)日：1992-12-22

申请号：US757953

申请日：1991-09-12

申请人： Issei Imahashi ,  Nobuo Ishii

发明人： Issei Imahashi ,  Nobuo Ishii

IPC分类号： H01J37/32

CPC分类号： H01J37/32623 ,  H01J37/32192 ,  H01J37/32678

摘要： A plasma generating appartus according to the present invention generates a plasma by cyclotron movement of electrons. The apparatus features microwave introducing guides for introducing microwaves, a reaction chamber in which a plasma is generated based on introduced microwaves, a magnetic field generating section, and solenoid coils. The magnetic field generating section features at least a pair of magnetic poles having mutually facing concave surfaces, and a yoke for coupling the magnetic poles to constitute a loop of magnetic force lines. The magnetic poles are arranged to face each other with the microwave introducing guides and the reaction chamber interposed, and the magnetic poles generate a magnetic field of a predetermined magnetic flux density consisting of magnetic force lines directed vertically to a major surface of a sample placed on a support table in the reaction chamber. The solenoid coils can vary the magnetic field of a predetermined magnetic flux density generated by the magnetic field generating section to a magnetic field of a desired magnetic flux density.

摘要翻译： 根据本发明的等离子体产生装置通过电子的回旋加速器运动产生等离子体。 该装置具有用于引入微波的微波引入引导件，基于引入的微波产生等离子体的反应室，磁场产生部分和电磁线圈。 磁场产生部具有至少一对具有相互面对的凹面的磁极和用于耦合磁极以构成磁力线的环的磁轭。 磁极被布置为彼此面对，微波引入引导件和反应室被插入，并且磁极产生预定磁通密度的磁场，该磁场由垂直于放置在样品上的样品的主表面的磁力线组成 反应室中的支撑台。 电磁线圈可以将由磁场产生部产生的预定磁通密度的磁场改变为所需磁通密度的磁场。

公开(公告)号：US06501082B1

公开(公告)日：2002-12-31

申请号：US09527562

申请日：2000-03-16

申请人： Toshio Goto ,  Masaru Hori ,  Masafumi Ito ,  Nobuo Ishii ,  Satoru Kawakami

发明人： Toshio Goto ,  Masaru Hori ,  Masafumi Ito ,  Nobuo Ishii ,  Satoru Kawakami

IPC分类号： G21K510

CPC分类号： H01J37/32192 ,  H01J37/3233 ,  H01J37/32623

摘要： A controlled plasma deposition system and method are provided including a vacuum vessel. An electron adding mass spectrometer is connected to a vacuum vessel for carrying out a gas treatment for a semi-conductor wafer. In the mass spectrometer, a gas in the vacuum vessel is incorporated, and electrons are added to the particles in the gas. Then the value of negative ions obtained by ionizing the particles, for example specific radicals, is measured. Once measured, the information is forwarded to a controller that may optimize the plasma deposition method.

摘要翻译： 提供了包括真空容器的受控等离子体沉积系统和方法。 将电子加入质谱仪连接到用于对半导体晶片进行气体处理的真空容器。 在质谱仪中，并入真空容器中的气体，并将电子加到气体中的颗粒中。 然后测量通过电离粒子，例如特定基团获得的负离子的值。 一旦测量，信息被转发到可优化等离子体沉积方法的控制器。

公开(公告)号：US07465424B2

公开(公告)日：2008-12-16

申请号：US10470414

申请日：2002-03-15

申请人： Koichi Hasegawa ,  Nobuo Ishii ,  Tomoyoshi Asaki

发明人： Koichi Hasegawa ,  Nobuo Ishii ,  Tomoyoshi Asaki

IPC分类号： C22C5/06

CPC分类号： C23C14/3414 ,  C22C5/06 ,  C22C5/08 ,  C23C14/14 ,  G11B7/258 ,  G11B7/259 ,  G11B7/2595 ,  G11B7/26 ,  Y10T428/21

摘要： Provided is a sputtering target material which has a high reflectance and which is excellent in a sulfurization resistance, comprising an Ag alloy prepared by alloying Ag with a specific small amount of the metal component (A) selected from In, Sn and Zn, a specific small amount of the metal component (B) selected from Au, Pd and Pt and, if necessary, a small amount of Cu.

摘要翻译： 提供了具有高反射率并且耐硫化性优异的溅射靶材料，其包括通过使Ag与特定量的选自In，Sn和Zn的特定量的金属组分（A）合金制备的Ag合金，具体的 少量选自Au，Pd和Pt的金属组分（B），如果需要，少量的Cu。

公开(公告)号：US20070219745A1

公开(公告)日：2007-09-20

申请号：US11587142

申请日：2005-04-22

申请人： Mitsuo Takeda ,  Wei Wang ,  Nobuo Ishii ,  Yoko Miyamoto

发明人： Mitsuo Takeda ,  Wei Wang ,  Nobuo Ishii ,  Yoko Miyamoto

IPC分类号： G01B11/25

CPC分类号： G01B11/002 ,  G01B11/024 ,  G01B11/24 ,  G06T7/001 ,  G06T7/262 ,  G06T7/529 ,  G06T7/579 ,  G06T2207/30136 ,  G06T2207/30164

摘要： Without using an interferometer, small displacement and/or three-dimensional shape of an object is detected in a noncontact way with high accuracy using pseudo-phase information calculated from e.g., a speckle pattern having a spatially random structure. A speckle image of the test object of the before displacement is obtained, and a spatial frequency spectrum is calculated by executing an N-dimensional Fourier transform for this. The complex analytic signal is obtained by setting the amplitude of frequency spectrum in the half plane including zero frequency in this amplitude distribution to zero, and executing the frequency spectrum amplitude in the half plane of the remainder in the inverse Fourier transform. And then, the amplitude value of this complex analytic signal is replaced with the constant value, a part of the obtained analytic signal domain is clipped, the phase information is calculated by the phase-only correlation function, and the cross-correlation peak in N-dimension is obtained. The displacement magnitude can be obtained by executing the above-mentioned method to the after displacement of the test object, and obtaining the difference of the cross-correlation peak before and after the displacement.

摘要翻译： 在不使用干涉仪的情况下，使用从例如具有空间随机结构的散斑图案计算的伪相位信息，以非接触方式以非接触方式检测物体的小位移和/或三维形状。 获得前一位移测试对象的斑点图像，并通过执行N维傅立叶变换来计算空间频谱。 通过将该幅度分布中包括零频率的半平面中的频谱的幅度设置为零，并且在逆傅立叶变换中执行余数的半平面中的频谱幅度，获得复数分析信号。 然后，将该复数分析信号的振幅值代入常数值，得到的分析信号域的一部分被剪切，相位信息由相位相关函数计算，N相互相关峰值 - 获得维度。 可以通过对被检体的移位后的上述方法进行位移大小，得到位移前后的互相关峰的差。

公开(公告)号：US06910440B2

公开(公告)日：2005-06-28

申请号：US09979719

申请日：2001-01-18

申请人： Nobuo Ishii ,  Yasuyoshi Yasaka ,  Kibatsu Shinohara

发明人： Nobuo Ishii ,  Yasuyoshi Yasaka ,  Kibatsu Shinohara

IPC分类号： H01J37/32 ,  C23C16/00 ,  H05H1/00

摘要： A plasma processing apparatus that generates a uniform plasma, thus allowing uniform processing of large-diameter wafers. The cylindrical apparatus includes a wafer mounting table, a silica plate providing an airtight seal, a microwave supplier for propagating a microwave in TE11 mode, and a cylindrical waveguide connected at one end to the microwave supplier. A radial waveguide box is connected between the other end of the cylindrical waveguide and the silica plate. The radial waveguide box extends radially outward from the cylindrical waveguide, forming a flange and defining an interior waveguide space. A disc-shaped slot antenna is located at the lower end of the radial waveguide box, above the silica plate. A circularly-polarized wave converter disposed in the cylindrical waveguide rotates the TE11-mode microwave about the axis of the cylindrical waveguide, and sends the rotating microwave to the radial waveguide box.

摘要翻译： 一种等离子体处理装置，其产生均匀的等离子体，从而允许大直径晶片的均匀加工。 圆筒形装置包括晶片安装台，提供气密密封的石英板，用于以TE11模式传播微波的微波供应器，以及一端连接到微波供应器的圆柱形波导。 径向波导盒连接在圆柱形波导的另一端和石英板之间。 径向波导盒从圆柱形波导径向向外延伸，形成凸缘并限定内部波导空间。 盘状槽天线位于径向波导盒的下端，位于石英板上方。 设置在圆筒形波导管内的圆偏振波转换器围绕圆柱形波导的轴线旋转TE11模式微波，并将旋转的微波发送到径向波导盒。