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1.发明授权公开(公告)号：US07179330B2
公开(公告)日：2007-02-20
申请号：US10510695
申请日：2003-04-23
IPC分类号： C30B15/00
CPC分类号： C30B15/22 , C30B15/36 , C30B29/06 , Y10T117/1032
摘要： The present invention is a method of manufacturing a silicon single crystal by Czochralski method without performing Dash Necking method, wherein a temperature variation at a surface of a silicon melt is kept at ±5° C. or less at least for a period from a point of bringing the tip end of a seed crystal into contact with the silicon melt to a point of shifting to pull the single crystal. Thereby, in a method of growing a silicon single crystal by Czochralski method without using Dash Necking method, a success ratio of growing a single crystal free from dislocation can be increased, at the same time a heavy silicon single crystal having a large diameter in which a diameter of a constant diameter portion is over 200 mm can be grown even in the case of growing a silicon single crystal having a crystal orientation of .
摘要翻译： 本发明是通过Czochralski法制造单晶硅的方法，而不进行Dash Necking方法，其中硅熔体表面的温度变化至少保持在±5℃或更低的时间点 使晶种的尖端与硅熔体接触以转移以拉动单晶。 因此，在不使用Dash Necking法的情况下，通过Czochralski法生长硅单晶的方法中，可以提高生长不含位错的单晶的成功率，同时可以增加直径大的重硅单晶，其中， 即使在生长晶体取向为<110>的硅单晶的情况下，也可以生长恒定直径部分的直径超过200mm。
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2.发明申请公开(公告)号：US20050160966A1
公开(公告)日：2005-07-28
申请号：US10510695
申请日：2003-04-23
CPC分类号： C30B15/22 , C30B15/36 , C30B29/06 , Y10T117/1032
摘要： The present invention is a method of manufacturing a silicon single crystal by Czochralski method without performing Dash Necking method, wherein a temperature variation at a surface of a silicon melt is kept at ±5° C. or less at least for a period from a point of bringing the tip end of a seed crystal into contact with the silicon melt to a point of shifting to pull the single crystal. Thereby, in a method of growing a silicon single crystal by Czochralski method without using Dash Necking method, a success ratio of growing a single crystal free from dislocation can be increased, at the same time a heavy silicon single crystal having a large diameter in which a diameter of a constant diameter portion is over 200 mm can be grown even in the case of growing a silicon single crystal having a crystal orientation of
摘要翻译： 本发明是通过Czochralski法制造单晶硅的方法，而不进行Dash Necking方法，其中硅熔体表面的温度变化至少保持在±5℃以下， 使晶种的尖端与硅熔体接触以转移以拉动单晶。 因此，在不使用Dash Necking法的情况下，通过Czochralski法生长硅单晶的方法中，可以提高生长不含位错的单晶的成功率，同时可以增加直径大的重硅单晶，其中， 即使在生长晶体取向<110°的硅单晶的情况下，也可以生长恒定直径部分的直径超过200mm，
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3.发明申请Silicon single crystal wafer and epitaxial wafer, and method for producing silicon single crystal 有权硅单晶晶片和外延晶片，以及硅单晶的制造方法公开(公告)号：US20050252441A1
公开(公告)日：2005-11-17
申请号：US10512470
申请日：2003-05-07
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203
摘要： In a method for producing a silicon single crystal by Czochralski method, the single crystal is grown with controlling a growth rate between a growth rate at a boundary where a defect region detected by Cu deposition remaining after disappearance of OSF ring disappears when gradually decreasing a growth rate of silicon single crystal during pulling and a growth rate at a boundary where a high oxygen precipitation Nv region having a density of BMDs of 1×107 numbers/cm3 or more and/or a wafer lifetime of 30 μsec or less after oxygen precipitation treatment disappears when gradually decreasing the growth rate further. Thereby, there is provided a silicon single crystal which does not belong to any of V region rich in vacancy, OSF region and I region rich in interstitial silicon, and has excellent electrical characteristics and gettering capability, so that yield of devices can be surely improved, and also an epitaxial wafer.
摘要翻译： 在通过Czochralski法制造单晶硅的方法中，通过控制在逐渐减小生长时OSF环消失后残留的Cu沉积检测到的缺陷区域的边界处的生长速度之间的生长速率生长单晶 拉伸时的硅单晶速率和BMD密度为1×10 7 / cm 3以上的高氧沉淀Nv区域的边界处的生长速度，以及 /或在氧沉淀处理后30微米或更小的晶片寿命在进一步降低生长速率时消失。 由此，提供了不属于富含空隙的V区，OSF区和富含间隙硅的I区的任何一种的硅单晶，并且具有优异的电特性和吸杂能力，从而可以可靠地提高器件的产量 ，以及外延晶片。
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公开(公告)号：US07226507B2
公开(公告)日：2007-06-05
申请号：US10561865
申请日：2004-05-27
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/203
摘要： The present invention is a method for producing a single crystal of which a whole plane in a radial direction is a defect-free region with pulling the single crystal from a raw material melt in a chamber by Czochralski method, wherein a pulling condition is changed in a direction of the crystal growth axis during pulling the single crystal so that a margin of a pulling rate is always a predetermined value or more that the single crystal of which the whole plane in a radial direction is a defect-free region can be pulled. Thereby, there can be provided a method for producing a single crystal in which when a single crystal is produced by CZ method, the single crystal of which a whole plane in a radial direction is a defect-free region entirely in a direction of the crystal growth axis can be produced with stability.
摘要翻译： 本发明是一种单晶的制造方法，其中，通过Czochralski法从室内的原料熔融物中拉出单晶，其径向全平面为无缺陷区域，其中拉拔条件发生变化 拉伸单晶时的晶体生长轴的方向，使得拉伸速度的余量总是预先确定的值以上，使得整个平面在径向方向上的单晶是无缺陷区域。 因此，可以提供一种单晶的制造方法，其中当通过CZ法制造单晶时，其整个平面在径向方向上的无缺陷区域的单晶完全在晶体的方向上 生长轴可以稳定地生产。
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公开(公告)号：US20050064632A1
公开(公告)日：2005-03-24
申请号：US10500580
申请日：2003-10-24
IPC分类号： C23C14/48 , C30B15/00 , C30B29/06 , C30B31/00 , C30B31/22 , C30B33/00 , C30B33/04 , C30B33/06 , C30B33/10 , H01L21/02 , H01L21/322 , H01L21/762 , H01L27/12 , H01L21/00 , H01L21/30 , H01L21/46 , H01L21/84
CPC分类号： H01L21/76254 , C30B29/06 , C30B33/005 , C30B33/04 , C30B33/06 , C30B33/10
摘要： In a method for producing an SOI wafer comprising steps of implanting hydrogen ions etc. from a surface of a bond wafer 21 to form an ion-implanted layer 24 inside the wafer, bonding the ion-implanted surface of the bond wafer and a surface of a base wafer 22 via an oxide film 23 or directly, and forming an SOI wafer by delaminating a part of the bond wafer at the ion-implanted layer by heat treatment, wherein a silicon wafer consisting of silicon single crystal grown by Chochralski method, which is occupied by N region outside OSF generated in a ring shape and has no defect region detected by Cu deposition method, is used as the bond wafer. Thereby, even in the case of forming an extremely thin SOI layer 27 such that, for example, its thickness is 200 nm or less, there is provided an SOI wafer which has an excellent electric property without causing micro pits by cleaning with hydrofluoric acid etc., and in addition, can be produced without increasing the number of process.
摘要翻译： 在制造SOI晶片的方法中，包括从接合晶片21的表面注入氢离子等以在晶片内形成离子注入层24的步骤，将接合晶片的离子注入表面和 通过氧化膜23或直接形成基底晶片22，并且通过热处理在离子注入层分层接合晶片的一部分而形成SOI晶片，其中由通过Chochralski方法生长的由硅单晶组成的硅晶片，其 被OS环境外的N区域所占据，并且没有通过Cu沉积法检测到缺陷区域，被用作接合晶片。 因此，即使在形成极薄的SOI层27的情况下，例如其厚度为200nm以下，则提供了通过用氢氟酸清洗而不引起微坑的电性能优异的SOI晶片 ，而且可以在不增加处理次数的情况下生产。
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6.发明授权公开(公告)号：US07294196B2
公开(公告)日：2007-11-13
申请号：US10512470
申请日：2003-05-07
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203
摘要： In a method for producing a silicon single crystal by Czochralski method, the single crystal is grown with controlling a growth rate between a growth rate at a boundary where a defect region detected by Cu deposition remaining after disappearance of OSF ring disappears when gradually decreasing a growth rate of silicon single crystal during pulling and a growth rate at a boundary where a high oxygen precipitation Nv region having a density of BMDs of 1×107 numbers/cm3 or more and/or a wafer lifetime of 30 μsec or less after oxygen precipitation treatment disappears when gradually decreasing the growth rate further. Thereby, there is provided a silicon single crystal which does not belong to any of V region rich in vacancy, OSF region and I region rich in interstitial silicon, and has excellent electrical characteristics and gettering capability, so that yield of devices can be surely improved, and also an epitaxial wafer.
摘要翻译： 在通过Czochralski法制造单晶硅的方法中，通过控制在逐渐减小生长时OSF环消失后残留的Cu沉积检测到的缺陷区域的边界处的生长速度之间的生长速率生长单晶 拉伸时的硅单晶速率和BMD密度为1×10 7 / cm 3以上的高氧沉淀Nv区域的边界处的生长速度，以及 /或在氧沉淀处理后30微米或更小的晶片寿命在进一步降低生长速率时消失。 由此，提供了不属于富含空隙的V区，OSF区和富含间隙硅的I区的任何一种的硅单晶，并且具有优异的电特性和吸杂能力，从而可以可靠地提高器件的产量 ，以及外延晶片。
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公开(公告)号：US07129123B2
公开(公告)日：2006-10-31
申请号：US10500580
申请日：2003-10-24
CPC分类号： H01L21/76254 , C30B29/06 , C30B33/005 , C30B33/04 , C30B33/06 , C30B33/10
摘要： In a method for producing an SOI wafer comprising steps of implanting ions from a bond wafer surface to form an ion-implanted layer inside the wafer, bonding the ion-implanted bond wafer surface and a surface of a base wafer via an oxide film or directly, and forming an SOI wafer by delaminating by heat treatment a part of the bond wafer at the ion-implanted layer, the bond wafer is a silicon wafer that consists of a silicon single crystal grown by Czochralski method, that is occupied by N region outside OSF generated in a ring shape and that has no defect region detected by Cu deposition method. Thereby, even an extremely thin SOI layer having a thickness of 200 nm or less, can provide an SOI wafer that has an excellent electric property without micro pits caused by acid cleaning, and can be produced without increasing the number of processes.
摘要翻译： 在制造SOI晶片的方法中，包括从接合晶片表面注入离子以在晶片内部形成离子注入层的步骤，通过氧化膜或直接键合离子注入的接合晶片表面和基底晶片的表面 ，并且通过在离子注入层处热处理接合晶片的一部分来形成SOI晶片，接合晶片是由通过Czochralski方法生长的硅单晶组成的硅晶片，其被N区域外部占据 OSF以环形形成，并且没有通过Cu沉积法检测到缺陷区域。 因此，即使是厚度为200nm以下的极薄的SOI层也能够提供具有优异的电性能的SOI晶片，而不会产生由酸清洗引起的微凹坑，并且可以在不增加工艺数的情况下制造。
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公开(公告)号：US20060174819A1
公开(公告)日：2006-08-10
申请号：US10561865
申请日：2004-05-27
CPC分类号： C30B29/06 , C30B15/203
摘要： The present invention is a method for producing a single crystal of which a whole plane in a radial direction is a defect-free region with pulling the single crystal from a raw material melt in a chamber by Czochralski method, wherein a pulling condition is changed in a direction of the crystal growth axis during pulling the single crystal so that a margin of a pulling rate is always a predetermined value or more that the single crystal of which the whole plane in a radial direction is a defect-free region can be pulled. Thereby, there can be provided a method for producing a single crystal in which when a single crystal is produced by CZ method, the single crystal of which a whole plane in a radial direction is a defect-free region entirely in a direction of the crystal growth axis can be produced with stability.
摘要翻译： 本发明是一种单晶的制造方法，其中，通过Czochralski法从室内的原料熔融物中拉出单晶，其径向全平面为无缺陷区域，其中拉拔条件发生变化 拉伸单晶时的晶体生长轴的方向，使得拉伸速度的余量总是预先确定的值以上，使得整个平面在径向方向上的单晶是无缺陷区域。 因此，可以提供一种单晶的制造方法，其中当通过CZ法制造单晶时，其整个平面在径向方向上的无缺陷区域的单晶完全在晶体的方向上 生长轴可以稳定地生产。
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公开(公告)号：US07407866B2
公开(公告)日：2008-08-05
申请号：US10542376
申请日：2004-01-22
IPC分类号： H01L21/00
CPC分类号： C30B29/06 , C30B15/203 , H01L21/76251
摘要： An SOI wafer in which a base wafer and a bond wafer respectively consisting of silicon single crystal are bonded via an oxide film, and then the bond wafer is thinned to form a silicon active layer, wherein the base wafer is formed of silicon single crystal grown by Czochralski method, and the whole surface of the base wafer is within N region outside OSF region and doesn't include a defect region detected by Cu deposition method, or the whole surface of the base wafer is within a region outside OSF region, doesn't include a defect region detected by Cu deposition method, and includes I region containing dislocation cluster due to interstitial silicon. Thereby, there is provided an SOI wafer that retains high insulating properties and has an excellent electrical reliability in device fabrication even in the case of forming an extremely thin interlevel dielectric oxide film with, for example, a thickness of 100 nm or less.
摘要翻译： 其中分别由硅单晶构成的基底晶片和接合晶片通过氧化膜结合的SOI晶片，然后将接合晶片变薄以形成硅有源层，其中，基底晶片由单晶硅单晶 通过切克劳斯基法，基底晶片的整个表面在OSF区域外的N区域内，并且不包括通过Cu沉积法检测的缺陷区域，或者基底晶片的整个表面在OSF区域外的区域内， 不包括通过Cu沉积法检测的缺陷区域，并且包括由于间隙硅而含有位错簇的I区域。 由此，提供了即使在形成例如厚度为100nm以下的极薄的层间电介质氧化膜的情况下，也能够在器件制造中保持高绝缘性且具有优异的电可靠性的SOI晶片。
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公开(公告)号：US07326395B2
公开(公告)日：2008-02-05
申请号：US10568186
申请日：2004-08-13
IPC分类号： C01B33/26
CPC分类号： C30B15/20 , C30B29/06 , Y10T117/1068
摘要： The present invention is a method for producing a single crystal in accordance with Czochralski method by flowing an inert gas downward in a chamber 1 of a single crystal-pulling apparatus 11 and surrounding a single crystal 3 pulled from a raw material melt 2 with a gas flow-guide cylinder 4, wherein when a single crystal within N region outside OSF region generated in a ring shape in the radial direction of the single crystal is pulled, the single crystal within N region is pulled in a condition that flow amount of the inert gas between the single crystal and the gas flow-guide cylinder is 0.6 D(L/min) or more and pressure in the chamber is 0.6 D(hPa) or less, in which D (mm) is a diameter of the single crystal to be pulled. It is preferable that there is used the gas flow-guide cylinder that Fe concentration is 0.05 ppm or less, at least, in a surface thereof. Thereby, there is provided a method for producing a single crystal, wherein in the case that a single crystal is produced by an apparatus having a gas flow-guide cylinder in accordance with CZ method, the single crystal has low defect density and Fe concentration can be suppressed to be 1×1010 atoms/cm3 or less even in a peripheral part thereof.
摘要翻译： 本发明是一种根据切克劳斯基法制造单晶的方法，该方法是使惰性气体在单晶拉制装置11的室1中向下流动，并围绕从原料熔体2拉出的单晶3与气体 流动引导圆筒4，其中当拉伸在单晶体的径向方向上以环形产生的OSF区域外的N区域内的单晶时，N区域内的单晶在惰性流动量的条件下被拉 单晶和气体导流筒之间的气体为0.6D（L / min）以上，室内的压力为0.6D（hPa）以下，其中D（mm）为单晶直径 被拉。 至少在其表面中优选使用气体导向气缸Fe浓度为0.05ppm以下。 因此，提供了一种单晶的制造方法，其中，在通过具有根据CZ法的气体导向筒的装置制造单晶的情况下，单晶的缺陷密度低，Fe浓度可以 即使在其周边部分被抑制为1×10 10原子/ cm 3以下。
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