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    CARBON SPARK EVAPORATION
    1.
    发明申请
    CARBON SPARK EVAPORATION 有权
    碳泡沫蒸发

    公开(公告)号：US20140054165A1

    公开(公告)日：2014-02-27

    申请号：US14110982

    申请日：2012-03-26

    申请人： Jürgen Ramm ,  Beno Widrig ,  Kurt Ruhm

    发明人： Jürgen Ramm ,  Beno Widrig ,  Kurt Ruhm

    IPC分类号： H01J37/32 ,  H05B7/20 ,  H05B7/148

    CPC分类号： H01J37/32055 ,  C23C14/325 ,  H01J37/32064 ,  H05B7/148 ,  H05B7/20 ,  H05H2001/4682

    摘要： The invention relates to a method for operating a pulsed discontinuous spark discharge. The spark is fed via a capacitor. Between the pulses there are switched-off time intervals during which no spark current flows. Within the pulses, that is to say during the switched-on time intervals, the supply of charge is stopped upon a current threshold being reached and is restarted, with the result that subpulses occur within the pulses. The time intervals and subpulses are chosen according to the invention such that when the capacitor is switched on again, the spark discharge readily ignites again.

    摘要翻译： 本发明涉及一种操作脉冲不连续火花放电的方法。 火花通过电容器馈电。 在脉冲之间有关闭时间间隔，在此期间没有火花电流流动。 在脉冲内，也就是说，在接通时间间隔期间，在达到电流阈值时停止供电，并且重新开始，从而在脉冲内发生子脉冲。 根据本发明选择时间间隔和子脉冲，使得当电容器再次接通时，火花放电容易再次点燃。

    REACTIVE SPUTTERING WITH MULTIPLE SPUTTER SOURCES
    3.
    发明申请
    REACTIVE SPUTTERING WITH MULTIPLE SPUTTER SOURCES 审中-公开
    具有多个溅射源的反应溅射

    公开(公告)号：US20120031749A1

    公开(公告)日：2012-02-09

    申请号：US13258576

    申请日：2010-04-23

    申请人： Martin Dubs ,  Kurt Ruhm ,  Hartmut Rohrmann

    发明人： Martin Dubs ,  Kurt Ruhm ,  Hartmut Rohrmann

    IPC分类号： C23C14/35 ,  C23C14/34

    CPC分类号： C23C14/0036 ,  C23C14/0094 ,  C23C14/352 ,  C23C14/505 ,  H01J37/3405 ,  H01J37/3426 ,  H01J37/3438 ,  H01J37/3444

    摘要： The apparatus (1) for coating a substrate (14) by reactive sputtering comprises an axis (8), at least two targets (11,12) in an arrangement symmetrically to said axis (8) and a power supply connected to the targets (11,12), wherein the targets are alternatively operable as cathode and anode. The method is a method for manufacturing a coated substrate (14) by coating a substrate (14) by reactive sputtering in an apparatus (1) comprising an axis (8). The method comprises a) providing a substrate (14) to be coated; b) providing at least two targets (11,12) in an arrangement symmetrically to said axis (8); c) alternatively operating said targets (11,12) as cathode and anode during coating. Preferably, the targets (11,12) are rotated during sputtering and/or the targets are arranged concentrically, with an innermost circular target surrounded by at least one ring-shaped outer target.

    摘要翻译： 用于通过反应溅射涂覆衬底（14）的装置（1）包括轴线（8），至少两个对准所述轴线（8）的靶子（11,12）和连接到靶材 11,12），其中目标可替代地可操作为阴极和阳极。 该方法是通过在包括轴线（8）的装置（1）中通过反应溅射涂覆基板（14）来制造涂覆的基板（14）的方法。 该方法包括：a）提供待涂覆的基底（14）; b）以与所述轴线（8）对称的布置提供至少两个目标（11,12）; c）在涂覆期间可选地将所述靶（11,12）作为阴极和阳极操作。 优选地，靶（11,12）在溅射期间旋转和/或目标物同心地布置，其中最内圆的圆形靶被至少一个环形外靶围绕。

    High-power sputtering source
    4.
    发明授权
    High-power sputtering source 有权
    大功率溅射源

    公开(公告)号：US09376745B2

    公开(公告)日：2016-06-28

    申请号：US14112618

    申请日：2012-03-30

    申请人： Siegfried Krassnitzer ,  Kurt Ruhm

    发明人： Siegfried Krassnitzer ,  Kurt Ruhm

    IPC分类号： C23C14/34 ,  C23C14/35 ,  H01J37/34

    CPC分类号： C23C14/35 ,  C23C14/352 ,  H01J37/3405 ,  H01J37/3444 ,  H01J37/3464 ,  H01J37/3467 ,  H01J37/3497

    摘要： The invention relates to a magnetron sputtering process that allows material to be sputtered from a target surface in such a way that a high percentage of the sputtered material is provided in the form of ions. According to the invention, said aim is achieved using a simple generator, the power of which is fed to multiple magnetron sputtering sources spread out over several time intervals, i.e. the maximum power is supplied to one sputtering source during one time interval, and the maximum power is supplied to the following sputtering source in the subsequent time interval, such that discharge current densities of more than 0.2 A/cm2 are obtained. The sputtering target can cool down during the off time, thus preventing the temperature limit from being exceeded.

    摘要翻译： 本发明涉及一种磁控溅射工艺，其允许材料以目标表面溅射，使得高比例的溅射材料以离子的形式提供。 根据本发明，使用简单的发生器实现所述目的，其功率被馈送到在多个时间间隔内分布的多个磁控溅射源，即在一个时间间隔期间将最大功率提供给一个溅射源，并且最大值 在随后的时间间隔内向下一个溅射源供电，从而获得大于0.2A / cm 2的放电电流密度。 溅射靶可以在关闭时间内冷却，从而防止超出温度限制。

    HIGH-POWER SPUTTERING SOURCE
    6.
    发明申请
    HIGH-POWER SPUTTERING SOURCE 有权
    大功率溅射源

    公开(公告)号：US20140061030A1

    公开(公告)日：2014-03-06

    申请号：US14112618

    申请日：2012-03-30

    申请人： Siegfried Krassnitzer ,  Kurt Ruhm

    发明人： Siegfried Krassnitzer ,  Kurt Ruhm

    IPC分类号： C23C14/35

    CPC分类号： C23C14/35 ,  C23C14/352 ,  H01J37/3405 ,  H01J37/3444 ,  H01J37/3464 ,  H01J37/3467 ,  H01J37/3497

    摘要： The invention relates to a magnetron sputtering process that allows material to be sputtered from a target surface in such a way that a high percentage of the sputtered material is provided in the form of ions. According to the invention, said aim is achieved using a simple generator, the power of which is fed to multiple magnetron sputtering sources spread out over several time intervals, i.e. the maximum power is supplied to one sputtering source during one time interval, and the maximum power is supplied to the following sputtering source in the subsequent time interval, such that discharge current densities of more than 0.2 A/cm2 are obtained. The sputtering target can cool down during the off time, thus preventing the temperature limit from being exceeded.

    摘要翻译： 本发明涉及一种磁控溅射工艺，其允许材料以目标表面溅射，使得高比例的溅射材料以离子的形式提供。 根据本发明，使用简单的发生器实现所述目的，其功率被馈送到在多个时间间隔内分布的多个磁控溅射源，即在一个时间间隔期间将最大功率提供给一个溅射源，并且最大值 在随后的时间间隔内向下一个溅射源供电，从而获得大于0.2A / cm 2的放电电流密度。 溅射靶可以在关闭时间内冷却，从而防止超出温度限制。