Method and apparatus for EUV plasma source target delivery
    1.
    发明授权
    Method and apparatus for EUV plasma source target delivery 有权
    用于EUV等离子体源目标传递的方法和装置

    公开(公告)号:US07405416B2

    公开(公告)日:2008-07-29

    申请号:US11067124

    申请日:2005-02-25

    IPC分类号: H05G2/00

    CPC分类号: H05G2/003 H05G2/005 H05G2/006

    摘要: An EUV plasma formation target delivery system and method is disclosed which may comprise: a target droplet formation mechanism comprising a magneto-restrictive or electro-restrictive material, a liquid plasma source material passageway terminating in an output orifice; a charging mechanism applying charge to a droplet forming jet stream or to individual droplets exiting the passageway along a selected path; a droplet deflector intermediate the output orifice and a plasma initiation site periodically deflecting droplets from the selected path, a liquid target material delivery mechanism comprising a liquid target material delivery passage having an input opening and an output orifice; an electromotive disturbing force generating mechanism generating a disturbing force within the liquid target material, a liquid target delivery droplet formation mechanism having an output orifice; and/or a wetting barrier around the periphery of the output orifice.

    摘要翻译: 公开了一种EUV等离子体形成靶递送系统和方法,其可以包括:目标液滴形成机构,其包括磁阻或电子限制材料,终止于输出孔的液体等离子体源材料通道; 将电荷施加到液滴形成喷射流或沿着选定路径离开通道的各个液滴的充电机构; 在输出孔之间的液滴偏转器和等离子体引发位置周期性地偏转来自所选择的路径的液滴;液体靶材料输送机构,包括具有输入开口和输出孔的液体靶材料输送通道; 产生在液体目标材料内的干扰力的电动干扰力产生机构,具有输出孔的液体目标传送液滴形成机构; 和/或围绕输出孔周边的润湿屏障。

    Method and apparatus for EUV plasma source target delivery
    2.
    发明授权
    Method and apparatus for EUV plasma source target delivery 有权
    用于EUV等离子体源目标传递的方法和装置

    公开(公告)号:US07838854B2

    公开(公告)日:2010-11-23

    申请号:US12220560

    申请日:2008-07-25

    IPC分类号: H01J35/20

    CPC分类号: H05G2/003 H05G2/005 H05G2/006

    摘要: An EUV plasma formation target delivery system and method is disclosed which may comprise: a target droplet formation mechanism comprising a magneto-restrictive or electro-restrictive material, a liquid plasma source material passageway terminating in an output orifice; a charging mechanism applying charge to a droplet forming jet stream or to individual droplets exiting the passageway along a selected path; a droplet deflector intermediate the output orifice and a plasma initiation site periodically deflecting droplets from the selected path, a liquid target material delivery mechanism comprising a liquid target material delivery passage having an input opening and an output orifice; an electromotive disturbing force generating mechanism generating a disturbing force within the liquid target material, a liquid target delivery droplet formation mechanism having an output orifice; and/or a wetting barrier around the periphery of the output orifice.

    摘要翻译: 公开了一种EUV等离子体形成靶递送系统和方法,其可以包括:目标液滴形成机构,其包括磁阻或电子限制材料,终止于输出孔的液体等离子体源材料通道; 将电荷施加到液滴形成喷射流或沿着选定路径离开通道的各个液滴的充电机构; 在输出孔之间的液滴偏转器和等离子体引发位置周期性地偏转来自所选择的路径的液滴;液体靶材料输送机构,包括具有输入开口和输出孔的液体靶材料输送通道; 产生在液体目标材料内的干扰力的电动干扰力产生机构,具有输出孔的液体目标传送液滴形成机构; 和/或围绕输出孔周边的润湿屏障。

    EUV collector debris management
    4.
    发明授权
    EUV collector debris management 失效
    EUV收集器碎片管理

    公开(公告)号:US08075732B2

    公开(公告)日:2011-12-13

    申请号:US10979945

    申请日:2004-11-01

    IPC分类号: C23F1/00

    CPC分类号: B08B7/00

    摘要: A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.

    摘要翻译: 可以包括使用EUV等离子体源材料的EUV发光机构的方法和装置,所述EUV等离子体源材料包括将形成蚀刻化合物的材料,所述等离子体源材料在所选择的中心波长周围的带内产生EUV光,包括:EUV等离子体产生室 ; 包含在室内的EUV光收集器具有反射表面,该反射表面包含至少一层,该层包含不形成蚀刻化合物的材料和/或形成不显着降低该带中的反射表面的反射率的化合物层; 包含在腔室内的蚀刻剂源气体包括蚀刻剂源材料,等离子体源材料与蚀刻剂源材料形成蚀刻化合物,该蚀刻化合物具有允许从反射表面蚀刻蚀刻化合物的蒸气压。 蚀刻剂源材料可以包含卤素或卤素化合物。 蚀刻剂源材料可以基于在存在EUV光和/或DUV光的光子和/或具有足够能量以激发等离子体源材料的蚀刻的任何激发能量光子的情况下被激发的蚀刻来选择。 该装置还可以包括在反射表面的工作附近提供蚀刻刺激等离子体的蚀刻刺激等离子体发生器; 并且蚀刻剂源材料可以基于通过蚀刻刺激等离子体刺激的蚀刻来选择。 还可以存在离子加速剂将离子朝向反射表面加速。 离子可以包括蚀刻剂源材料。 该装置和方法可以包括具有待蚀刻的等离子体源材料的光学元件的EUV生产子系统的一部分。

    Drive laser for EUV light source
    5.
    发明申请
    Drive laser for EUV light source 有权
    驱动激光用于EUV光源

    公开(公告)号:US20070291350A1

    公开(公告)日:2007-12-20

    申请号:US11452558

    申请日:2006-06-14

    IPC分类号: H01S3/00

    摘要: A laser light source is disclosed having a laser oscillator producing an output beam; a first amplifier amplifying the output beam to produce a first amplified beam, and a second amplifier amplifying the first amplified beam to produce a second amplified beam. For the source, the first amplifier may have a gain medium characterized by a saturation energy (Es, 1) and a small signal gain (go, 1); and the second amplifier may have a gain medium characterized by a saturation energy (Es, 2) and a small signal gain (go, 2), with (go, 1)>(go, 2) and (Es, 2)>(Es, 1). In another aspect, a laser oscillator of a laser light source may be a cavity dumped laser oscillator, e.g. a mode-locked laser oscillator, q-switched laser oscillator and may further comprising a temporal pulse stretcher.

    摘要翻译: 公开了具有产生输出光束的激光振荡器的激光源; 放大所述输出光束以产生第一放大光束的第一放大器,以及放大所述第一放大光束以产生第二放大光束的第二放大器。 对于源极,第一放大器可以具有以饱和能量(E S,S 1)和小信号增益(g 1,...)为特征的增益介质; 并且第二放大器可以具有特征在于饱和能量(E SUB,2 N)和小信号增益(g 0,o 2)的增益介质,其中(g < (o,SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB >)。 在另一方面,激光光源的激光振荡器可以是空腔倾覆的激光振荡器,例如。 模式锁定激光振荡器,q切换激光振荡器,并且还可以包括时间脉冲展开器。