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    Methods and apparatus for rapidly responsive heat control in plasma processing devices
    2.
    发明授权
    Methods and apparatus for rapidly responsive heat control in plasma processing devices 有权
    等离子体处理装置中快速响应热控制的方法和装置

    公开(公告)号：US09155134B2

    公开(公告)日：2015-10-06

    申请号：US12253657

    申请日：2008-10-17

    申请人： Chunlei Zhang ,  Richard Fovell ,  Ezra Robert Gold ,  Ajit Balakrishna ,  James P. Cruse

    发明人： Chunlei Zhang ,  Richard Fovell ,  Ezra Robert Gold ,  Ajit Balakrishna ,  James P. Cruse

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H05B7/18 ,  H01J37/32 ,  H01L21/67

    CPC分类号： H05B7/18 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069

    摘要： Methods and apparatus for regulating the temperature of a component in a plasma-enhanced process chamber are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber and an RF source to provide RF energy to form a plasma in the process chamber. A component is disposed in the process chamber so as to be heated by the plasma when formed. A heater is configured to heat the component and a heat exchanger is configured to remove heat from the component. A chiller is coupled to the heat exchanger via a first flow conduit having an on/off flow control valve disposed therein and a bypass loop to bypass the flow control valve, wherein the bypass loop has a flow ratio valve disposed therein.

    摘要翻译： 本文提供了用于调节等离子体增强处理室中的组分的温度的方法和装置。 在一些实施例中，用于处理衬底的装置包括处理室和RF源，以提供RF能量以在处理室中形成等离子体。 一个部件设置在处理室中，以便在形成时被等离子体加热。 加热器被配置为加热部件并且热交换器被配置成从部件移除热量。 冷却器通过具有设置在其中的开/关流量控制阀的第一流动管道和旁路循环来耦合到热交换器，旁路回路绕过流量控制阀，其中旁路回路具有设置在其中的流量比阀。

    METHODS AND APPARATUS FOR RAPIDLY RESPONSIVE HEAT CONTROL IN PLASMA PROCESSING DEVICES
    3.
    发明申请
    METHODS AND APPARATUS FOR RAPIDLY RESPONSIVE HEAT CONTROL IN PLASMA PROCESSING DEVICES 有权
    等离子体加工装置中快速响应加热控制的方法和装置

    公开(公告)号：US20100096109A1

    公开(公告)日：2010-04-22

    申请号：US12253657

    申请日：2008-10-17

    申请人： CHUNLEI ZHANG ,  Richard Fovell ,  Ezra Robert Gold ,  Ajit Balakrishna ,  James P. Cruse

    发明人： CHUNLEI ZHANG ,  Richard Fovell ,  Ezra Robert Gold ,  Ajit Balakrishna ,  James P. Cruse

    IPC分类号： F28D15/00 ,  B01J19/08

    CPC分类号： H05B7/18 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069

    摘要： Methods and apparatus for regulating the temperature of a component in a plasma-enhanced process chamber are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber and an RF source to provide RF energy to form a plasma in the process chamber. A component is disposed in the process chamber so as to be heated by the plasma when formed. A heater is configured to heat the component and a heat exchanger is configured to remove heat from the component. A chiller is coupled to the heat exchanger via a first flow conduit having an on/off flow control valve disposed therein and a bypass loop to bypass the flow control valve, wherein the bypass loop has a flow ratio valve disposed therein.

    摘要翻译： 本文提供了用于调节等离子体增强处理室中的组分的温度的方法和装置。 在一些实施例中，用于处理衬底的装置包括处理室和RF源，以提供RF能量以在处理室中形成等离子体。 一个部件设置在处理室中，以便在形成时被等离子体加热。 加热器被配置为加热部件并且热交换器被配置成从部件移除热量。 冷却器通过具有设置在其中的开/关流量控制阀的第一流动管道和旁路循环来耦合到热交换器，旁路回路绕过流量控制阀，其中旁路回路具有设置在其中的流量比阀。

    Plasma reactor with a multiple zone thermal control feed forward control apparatus
    5.
    发明授权
    Plasma reactor with a multiple zone thermal control feed forward control apparatus 有权
    具有多区域热控制前馈控制装置的等离子体反应器

    公开(公告)号：US08012304B2

    公开(公告)日：2011-09-06

    申请号：US11408559

    申请日：2006-04-21

    申请人： Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas A. Buchberger, Jr. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

    发明人： Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas A. Buchberger, Jr. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

    IPC分类号： H01L21/306 ,  C23C16/46 ,  C23C16/52

    CPC分类号： H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

    摘要： A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer zone heat exchangers coupled to respective inner and outer zones of said electrostatic chuck. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively. Inner and outer zone agile control processors coupled to the thermal model govern the inner and outer zone backside gas pressure sources, respectively, in response to predictions from the model of changes in the respective pressures that would bring the temperatures measured by the inner and outer zone sensors, respectively, closer to a desired temperature.

    摘要翻译： 具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的内部和外部区域背侧气体压力源，用于将相应压力下的导热气体施加到相应的内部和外部区域 每当工件保持在表面上时形成的工件表面界面，以及联接到所述静电卡盘的相应内部和外部区域的内部和外部区域热交换器。 反应器还包括静电卡盘的内部和外部区域中的内部和外部区域温度传感器以及能够模拟通过蒸发器和表面之间的内部和外部区域的热传递的热模型，其基于来自内部和 外部温度传感器。 耦合到热模型的内部和外部区域敏捷控制处理器分别响应于来自模型的各个压力的变化的预测来控制内部和外部区域背侧气体压力源，该模型将使由内部和外部区域测量的温度 传感器分别更接近所需的温度。

    Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor
    7.
    发明申请
    Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor 有权
    在电容耦合等离子体反应器中以均匀的温度冷却晶片载体的方法

    公开(公告)号：US20070097580A1

    公开(公告)日：2007-05-03

    申请号：US11410782

    申请日：2006-04-24

    申请人： Paul Brillhart ,  Richard Fovell ,  Douglas Buchberger ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

    发明人： Paul Brillhart ,  Richard Fovell ,  Douglas Buchberger ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

    IPC分类号： H02H5/04

    CPC分类号： H01L21/67109

    摘要： A method of transferring heat from or to a workpiece support in an RF coupled plasma reactor includes placing coolant in an internal flow channel that is located inside the workpiece support and transferring heat from or to the coolant by circulating the coolant through a refrigeration loop in which the internal flow channel of the workpiece support constitutes an evaporator of the refrigeration loop. The method further includes maintaining thermal conditions of the coolant inside the evaporator within a range in which heat exchange between the workpiece support and the coolant is primarily or exclusively through the latent heat of vaporization of the coolant.

    摘要翻译： 在RF耦合的等离子体反应器中将热量传递到工件支架的方法包括：将冷却剂放置在位于工件支架内部的内部流动通道中，并通过使冷却剂循环通过制冷循环来将热量传递或传递给冷却剂， 工件支撑件的内部流动通道构成制冷回路的蒸发器。 该方法还包括将蒸发器内部的冷却剂的热条件保持在工件支承件和冷却剂之间的热交换主要或仅通过冷却剂的潜热潜热的范围内。

    Substrate support temperature control
    9.
    发明授权
    Substrate support temperature control 有权
    基板支持温度控制

    公开(公告)号：US08596336B2

    公开(公告)日：2013-12-03

    申请号：US12132101

    申请日：2008-06-03

    申请人： Richard Fovell ,  Paul Brillhart ,  Sang In Yi ,  Anisul H. Khan ,  Jivko Dinev ,  Shane Nevil

    发明人： Richard Fovell ,  Paul Brillhart ,  Sang In Yi ,  Anisul H. Khan ,  Jivko Dinev ,  Shane Nevil

    IPC分类号： F22B37/00 ,  G05D9/00 ,  B05C11/00

    CPC分类号： F28D15/00 ,  F28D2021/0077 ,  H01L21/67109 ,  H01L21/67248

    摘要： Apparatus for controlling the temperature of a substrate support may include a first heat transfer loop and a second heat transfer loop. The first heat transfer loop may have a first bath with a first heat transfer fluid at a first temperature. The second heat transfer loop may have a second bath with a second heat transfer fluid at a second temperature. The first and second temperatures may be the same or different. First and second flow controllers may be provided for respectively providing the first and second heat transfer fluids to a substrate support. One or more return lines may couple one or more outlets of the substrate support to the first and second baths for returning the first and second heat transfer fluids to the first and second baths.

    摘要翻译： 用于控制衬底支撑件的温度的装置可以包括第一传热回路和第二传热回路。 第一传热回路可以具有在第一温度下具有第一传热流体的第一浴。 第二传热回路可以具有在第二温度下具有第二传热流体的第二浴。 第一和第二温度可以相同或不同。 可以提供第一和第二流量控制器以分别将第一和第二传热流体提供给基板支撑件。 一个或多个返回线可以将衬底支撑件的一个或多个出口连接到第一和第二浴，以将第一和第二传热流体返回到第一和第二浴。