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公开(公告)号：US08367983B2
公开(公告)日：2013-02-05
申请号：US12483770
申请日：2009-06-12
CPC分类号： H01L21/67115
摘要： Methods and apparatus for processing substrates and measuring the temperature using radiation pyrometry are disclosed. A reflective layer is provided on a window of a processing chamber. A radiation source providing radiation in a first range of wavelengths heats the substrate, the substrate being transparent to radiation in a second range of wavelengths within the first range of wavelengths for a predetermined temperature range. Radiation within the second range of wavelength is reflected by the reflective layer.
摘要翻译： 公开了用于处理衬底和使用辐射测温法测量温度的方法和装置。 反射层设置在处理室的窗口上。 提供在第一波长范围内的辐射的辐射源加热衬底，所述衬底对于处于预定温度范围的第一波长范围内的第二波长范围内的辐射是透明的。 在第二波长范围内的辐射被反射层反射。
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公开(公告)号：US20090289053A1
公开(公告)日：2009-11-26
申请号：US12483770
申请日：2009-06-12
CPC分类号： H01L21/67115
摘要： Methods and apparatus for processing substrates and measuring the temperature using radiation pyrometry are disclosed. A reflective layer is provided on a window of a processing chamber. A radiation source providing radiation in a first range of wavelengths heats the substrate, the substrate being transparent to radiation in a second range of wavelengths within the first range of wavelengths for a predetermined temperature range. Radiation within the second range of wavelength is reflected by the reflective layer.
摘要翻译： 公开了用于处理衬底和使用辐射测温法测量温度的方法和装置。 反射层设置在处理室的窗口上。 提供在第一波长范围内的辐射的辐射源加热衬底，所述衬底对于处于预定温度范围的第一波长范围内的第二波长范围内的辐射是透明的。 在第二波长范围内的辐射被反射层反射。
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公开(公告)号：US20080142208A1
公开(公告)日：2008-06-19
申请号：US11611704
申请日：2006-12-15
CPC分类号： H01L21/67109 , F28D15/02 , F28D15/06 , F28D2021/0077 , F28F13/14 , F28F13/185
摘要： A method and apparatus for heating a substrate is provided herein. In one embodiment, a substrate heater includes a vessel having an upper member including a top surface for supporting a substrate thereon; a liquid disposed within and partially filling the vessel; and a heat source for providing sufficient heat to the liquid to boil the liquid. Optionally, a pressure controller for regulating the pressure within the vessel may be provided. The substrate is heated by first placing the substrate on the support surface of the vessel of the substrate heater. The liquid contained in the vessel is then boiled. As the liquid is boiling, a uniform film of heated condensation is deposited on a bottom side of the support surface. The heated condensation heats the support surface which in turn, heats the substrate.
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公开(公告)号：US20080145038A1
公开(公告)日：2008-06-19
申请号：US11611680
申请日：2006-12-15
IPC分类号： F26B3/28
CPC分类号： H01L21/67103 , H01L21/67098 , H01L21/67109 , H01L21/68714
摘要： A method and apparatus for heating a substrate is provided herein. In one embodiment, a substrate heater includes a vessel having an upper member including a top surface for supporting a substrate thereon; a liquid disposed within and partially filling the vessel; and a heat source for providing sufficient heat to the liquid to boil the liquid. Optionally, a pressure controller for regulating the pressure within the vessel may be provided. The substrate is heated by first placing the substrate on the support surface of the vessel of the substrate heater. The liquid contained in the vessel is then boiled. As the liquid is boiling, a uniform film of heated condensation is deposited on a bottom side of the support surface. The heated condensation heats the support surface which in turn, heats the substrate.
摘要翻译： 本文提供了一种用于加热衬底的方法和装置。 在一个实施例中，衬底加热器包括具有上部构件的容器，所述上部构件包括用于在其上支撑衬底的顶表面; 设置在容器内并部分填充容器的液体; 以及用于向液体提供足够的热量以使液体沸腾的热源。 可选地，可以提供用于调节容器内的压力的压力控制器。 首先将基板放置在基板加热器的容器的支撑表面上来加热基板。 然后将包含在容器中的液体煮沸。 当液体沸腾时，在支撑表面的底侧上沉积有均匀的加热冷凝膜。 加热的冷凝会加热支撑表面，从而加热基板。
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公开(公告)号：US08765618B2
公开(公告)日：2014-07-01
申请号：US13485699
申请日：2012-05-31
申请人： Dean Jennings , Haifan Liang , Mark Yam , Vijay Parihar , Abhilash J. Mayur , Aaron Muir Hunter , Bruce E. Adams , Joseph M. Ranish
发明人： Dean Jennings , Haifan Liang , Mark Yam , Vijay Parihar , Abhilash J. Mayur , Aaron Muir Hunter , Bruce E. Adams , Joseph M. Ranish
IPC分类号： H01L21/268
CPC分类号： B23K26/0608 , B23K26/0604 , B23K26/0613 , B23K26/073 , B23K26/0732 , B23K26/0736 , B23K26/0738 , B23K26/352 , H01L21/02675 , H01L21/2026 , H01L21/268 , H01L21/324
摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
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公开(公告)号：US07867868B2
公开(公告)日：2011-01-11
申请号：US11681343
申请日：2007-03-02
申请人： Joseph M. Ranish , Bruce E. Adams
发明人： Joseph M. Ranish , Bruce E. Adams
IPC分类号： H01L21/336
CPC分类号： H01L21/67115 , H01L21/26513 , H01L21/268 , H01L21/2686 , H01L21/324 , H01L21/6715 , H01L29/66575
摘要： The present invention generally provides an absorber layer using carbon based materials with increased and stabled thermal absorption coefficient and economical methods to produce such an absorber layer. One embodiment of the present invention provides a method for processing a substrate comprising depositing an absorber layer on a top surface of the substrate, wherein the substrate is maintained under a first temperature, annealing the substrate in a thermal processing chamber, wherein the substrate is heated to a second temperature, and the second temperature is higher than the first temperature, and removing the absorber layer from the substrate.
摘要翻译： 本发明通常提供一种使用具有增加和稳定的热吸收系数的碳基材料和生产这种吸收层的经济方法的吸收层。 本发明的一个实施方案提供了一种处理衬底的方法，包括在衬底的顶表面上沉积吸收层，其中将衬底保持在第一温度下，在热处理室中退火衬底，其中衬底被加热 到第二温度，第二温度高于第一温度，并且从基板除去吸收体层。
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公开(公告)号：US20080214014A1
公开(公告)日：2008-09-04
申请号：US11681343
申请日：2007-03-02
申请人： JOSEPH M. RANISH , Bruce E. Adams
发明人： JOSEPH M. RANISH , Bruce E. Adams
IPC分类号： H01L21/31 , H01L51/40 , H01L21/469 , B05D3/02
CPC分类号： H01L21/67115 , H01L21/26513 , H01L21/268 , H01L21/2686 , H01L21/324 , H01L21/6715 , H01L29/66575
摘要： The present invention generally provides an absorber layer using carbon based materials with increased and stabled thermal absorption coefficient and economical methods to produce such an absorber layer. One embodiment of the present invention provides a method for processing a substrate comprising depositing an absorber layer on a top surface of the substrate, wherein the substrate is maintained under a first temperature, annealing the substrate in a thermal processing chamber, wherein the substrate is heated to a second temperature, and the second temperature is higher than the first temperature, and removing the absorber layer from the substrate.
摘要翻译： 本发明通常提供一种使用具有增加和稳定的热吸收系数的碳基材料和生产这种吸收层的经济方法的吸收层。 本发明的一个实施方案提供了一种处理衬底的方法，包括在衬底的顶表面上沉积吸收层，其中将衬底保持在第一温度下，在热处理室中退火衬底，其中衬底被加热 到第二温度，第二温度高于第一温度，并且从基板除去吸收体层。
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公开(公告)号：US20080118641A1
公开(公告)日：2008-05-22
申请号：US11561851
申请日：2006-11-20
申请人： Joseph M. Ranish , Bruce E. Adams
发明人： Joseph M. Ranish , Bruce E. Adams
摘要： Methods for compensating for a thermal profile in a substrate heating process are provided herein. In one embodiment, a method of processing a substrate includes determining an initial thermal profile of a substrate resulting from a process; imposing a compensatory thermal profile on the substrate based on the initial thermal profile; and performing the process to create a desired thermal profile on the substrate. In other embodiments of the invention, the initial substrate thermal profile is compensated for by adjusting a local mass heated per unit area, a local heat capacity per unit area, or an absorptivity or reflectivity of a component proximate the substrate prior to performing the process. In another embodiment, the heat provided by an edge ring to the substrate may be controlled either prior to or during the substrate heating process.
摘要翻译： 本文提供了补偿基板加热过程中的热分布的方法。 在一个实施例中，处理衬底的方法包括确定由工艺产生的衬底的初始热分布; 基于初始热分布在衬底上施加补偿热分布; 并执行该过程以在衬底上产生期望的热分布。 在本发明的其它实施例中，通过在执行该过程之前通过调整每单位面积加热的局部质量，每单位面积的局部热容量或靠近该衬底的组分的吸收率或反射率来补偿初始衬底热分布。 在另一个实施例中，由边缘环向衬底提供的热量可以在衬底加热过程之前或期间被控制。
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9.发明授权Temperature measurement and control of wafer support in thermal processing chamber 有权热处理室中晶片支架的温度测量和控制公开(公告)号：US07860379B2
公开(公告)日：2010-12-28
申请号：US11623238
申请日：2007-01-15
CPC分类号： H01L21/67248 , H01L21/67115
摘要： The present invention provides apparatus and methods for achieving uniform heating to a substrate during a rapid thermal process. More particularly, the present invention provides apparatus and methods for controlling the temperature of an edge ring supporting a substrate during a rapid thermal process to improve temperature uniformity across the substrate.
摘要翻译： 本发明提供了用于在快速热处理期间实现对衬底的均匀加热的装置和方法。 更具体地，本发明提供了用于在快速热处理期间控制支撑衬底的边缘环的温度的装置和方法，以改善穿过衬底的温度均匀性。
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10.发明授权Thermal flux laser annealing for ion implantation of semiconductor P-N junctions 有权半导体P-N结离子注入的热通量激光退火公开(公告)号：US07135392B1
公开(公告)日：2006-11-14
申请号：US11185651
申请日：2005-07-20
IPC分类号： H01L21/42
CPC分类号： H01L21/268 , B23K26/0604 , B23K26/0676 , B23K26/0738 , B23K2101/40 , G02B6/4206 , G02B6/4218 , G02B27/0994 , H01L21/67115 , H01S5/4012 , H01S5/405
摘要： A method for forming P-N junctions in a semiconductor wafer includes ion implanting dopant impurities into the wafer and annealing the wafer using a thermal flux laser annealing apparatus that includes an array of semiconductor laser emitters arranged in plural parallel rows extending along a slow axis, plural respective cylindrical lenses overlying respective ones of the rows of laser emitters for collimating light from the respective rows along a fast axis generally perpendicular to the slow axis, a homogenizing light pipe having an input face at a first end for receiving light from the plural cylindrical lenses and an output face at an opposite end, the light pipe comprising a pair of reflective walls extending between the input and output faces and separated from one another along the direction of the slow axis, and scanning apparatus for scanning light emitted from the homogenizing light pipe across the wafer in a scanning direction parallel to the fast axis.
摘要翻译： 一种用于在半导体晶片中形成PN结的方法包括将晶体中的掺杂杂质离子注入到晶片中并使用热通量激光退火装置退火晶片，所述热通量激光退火装置包括沿着慢轴延伸的多个平行的排列的半导体激光发射器阵列， 圆柱形透镜，覆盖相应行的激光发射器，用于沿着大致垂直于慢轴的快轴校准来自各行的光;均质光管，其具有在第一端处的输入面，用于接收来自多个柱面透镜的光;以及 在相对端的输出面，所述光管包括在所述输入和输出面之间延伸并且沿着所述慢轴的方向彼此分离的一对反射壁，以及用于扫描从均匀化光管发射的光的扫描装置 该晶片在平行于快轴的扫描方向上。
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