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公开(公告)号：US08979087B2
公开(公告)日：2015-03-17
申请号：US13486807
申请日：2012-06-01
IPC分类号： B23Q3/00 , H01L21/687 , H01L21/67
CPC分类号： H01L21/68757 , H01L21/67115 , H01L21/68735 , Y10S269/909
摘要： Embodiments of the present invention provide a substrate supporting edge ring for supporting a substrate. In one embodiment, a substrate support ring is provided. The substrate support ring comprises an annular body. The annular body comprises an outer band extending radially inward from an outer annular sidewall; and a substrate supporting region extending inward from an inner portion of the outer band, wherein the annular body comprises a first material that is exposed and at least a portion of the substrate supporting region is covered with a coating comprising a second material that is different than the first material.
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公开(公告)号：US08744250B2
公开(公告)日：2014-06-03
申请号：US13193489
申请日：2011-07-28
CPC分类号： H01L21/67346 , F27D5/0037 , F27D11/12 , F27D2005/0081 , H01L21/67115 , H01L21/68735
摘要： Embodiments of the present invention provide an edge ring for supporting a substrate with increased temperature uniformity. More particularly, embodiments of the present invention provide an edge ring having one or more surface area increasing structures formed on an energy receiving surface of the edge ring.
摘要翻译： 本发明的实施例提供了一种用于支撑具有增加的温度均匀性的基板的边缘环。 更具体地，本发明的实施例提供一种边缘环，其具有形成在边缘环的能量接收表面上的一个或多个表面积增加结构。
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公开(公告)号：US08724977B2
公开(公告)日：2014-05-13
申请号：US13548858
申请日：2012-07-13
IPC分类号： A21B2/00
CPC分类号： H01L22/26 , H01L21/324 , H01L21/67115 , H01L21/67248 , H01L22/10
摘要： Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.
摘要翻译： 本发明的实施例提供了用于降低热处理期间的不均匀性的装置和方法。 一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件被配置为使衬底旋转;传感器组件，被配置为测量衬底的温度 多个位置，以及一个或多个脉冲加热元件，其配置成向处理体积提供脉冲能量。
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4.发明申请公开(公告)号：US20130284095A1
公开(公告)日：2013-10-31
申请号：US13785539
申请日：2013-03-05
申请人： Joseph M. Ranish
发明人： Joseph M. Ranish
CPC分类号： H01L21/02104 , G02B17/002 , H01L21/67115
摘要： Embodiments described herein generally relate to apparatus for heating substrates. The apparatus generally include a process chamber having a substrate support therein. A plurality of lamps is positioned to provide radiant energy through an optically transparent dome to a substrate positioned on the substrate support. A light focusing assembly is positioned within the chamber to influence heating and temperature distribution on the substrate and to facilitate formation of a film on a substrate having uniform properties, such as density. The light focusing assembly can include one or more reflectors, light pipes, or refractive lenses.
摘要翻译： 本文描述的实施例一般涉及用于加热衬底的装置。 该设备通常包括其中具有衬底支撑件的处理室。 多个灯被定位成通过光学透明的圆顶将辐射能提供给位于基板支撑件上的基板。 光聚焦组件位于腔室内以影响衬底上的加热和温度分布，并且有助于在具有均匀性质如密度的衬底上形成膜。 光聚焦组件可以包括一个或多个反射器，光管或折射透镜。
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5.发明授权公开(公告)号：US08452166B2
公开(公告)日：2013-05-28
申请号：US12483084
申请日：2009-06-11
申请人： Joseph M. Ranish , Blake Koelmel , Aaron Hunter
发明人： Joseph M. Ranish , Blake Koelmel , Aaron Hunter
IPC分类号： A21B2/00
CPC分类号： H01L22/10 , H01L21/67115 , H01L21/67248
摘要： Embodiments of the present invention provide apparatus and method for reducing heating source radiation influence in temperature measurement during thermal processing. In one embodiment of the present invention, background radiant energy, such as an energy source of a thermal processing chamber, is marked within a selected spectrum, a characteristic of the background is then determined by measuring radiant energy at a reference wavelength within the selected spectrum and a comparing wavelength just outside the selected spectrum.
摘要翻译： 本发明的实施例提供了用于在热处理期间减少加热源辐射对温度测量的影响的装置和方法。 在本发明的一个实施例中，将背景辐射能（例如热处理室的能量源）标记在所选择的光谱内，然后通过测量所选光谱内的参考波长的辐射能来确定背景的特性 以及刚好在所选频谱之外的比较波长。
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6.发明申请REFLECTIVE DEPOSITION RINGS AND SUBSTRATE PROCESSING CHAMBERS INCORPORTING SAME 有权反射沉积环和与其同时进行的基板处理室公开(公告)号：US20130055952A1
公开(公告)日：2013-03-07
申请号：US13598828
申请日：2012-08-30
IPC分类号： H01L21/461 , B23Q3/00
CPC分类号： H01L21/67115 , C23C14/541 , C23C16/481 , H01L21/67248 , H01L21/68735 , H01L21/68742
摘要： Apparatus for improving temperature uniformity across a substrate are provided herein. In some embodiments, a deposition ring for use in a substrate processing system to process a substrate may include an annular body having a first surface, an opposing second surface, and a central opening passing through the first and second surfaces, wherein the second surface is configured to be disposed over a substrate support having a support surface to support a substrate having a given width, and wherein the opening is sized to expose a predominant portion of the support surface; and wherein the first surface includes at least one reflective portion configured to reflect heat energy toward a central axis of the annular body, wherein the at least one reflective portion has a surface area that is about 5 to about 50 percent of a total surface area of the first surface.
摘要翻译： 本文提供了用于提高基板上的温度均匀性的装置。 在一些实施例中，用于处理衬底的衬底处理系统中的沉积环可以包括具有第一表面，相对的第二表面和穿过第一表面和第二表面的中心开口的环形体，其中第二表面是 被配置为设置在具有支撑表面的基板支撑件上，以支撑具有给定宽度的基板，并且其中所述开口的尺寸设定成暴露所述支撑表面的主要部分; 并且其中所述第一表面包括至少一个反射部分，所述至少一个反射部分构造成朝向所述环形体的中心轴线反射热能，其中所述至少一个反射部分的表面积为所述环形体的总表面积的约5至约50％ 第一个表面。
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公开(公告)号：US08314368B2
公开(公告)日：2012-11-20
申请号：US12036078
申请日：2008-02-22
CPC分类号： H01L21/324 , H01L21/67017 , H01L21/67098 , H01L21/67115
摘要： A silver reflector for reflecting radiation from a lamp in a semiconductor processing chamber is disclosed. The reflector may be a sleeve to be disposed in a lightpipe or part of a lamphead. The silver may be in the form of a coating on the sleeve or the lamphead.
摘要翻译： 公开了一种用于在半导体处理室中反射来自灯的辐射的银反射器。 反射器可以是套筒以设置在光管或灯头的一部分中。 银可以是套筒或灯头上的涂层形式。
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8.发明授权Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber 有权用于在处理室中支撑，定位和旋转衬底的装置和方法公开(公告)号：US08057601B2
公开(公告)日：2011-11-15
申请号：US11746392
申请日：2007-05-09
IPC分类号： C23C16/00
CPC分类号： H01L21/6838 , H01L21/67115
摘要： An apparatus and method for supporting, positioning and rotating a substrate are provided. In one embodiment, a support assembly for supporting a substrate includes an upper base plate and a lower base plate. The substrate is floated on a thin layer of air over the upper base plate. A positioning assembly includes a plurality of air bearing edge rollers or air flow pockets used to position the substrate in a desired orientation inside above the upper base plate. A plurality of slanted apertures or air flow pockets are configured in the upper base plate for flowing gas therethrough to rotate the substrate to ensure uniform heating during processing.
摘要翻译： 提供了用于支撑，定位和旋转衬底的装置和方法。 在一个实施例中，用于支撑衬底的支撑组件包括上基板和下基板。 衬底浮在上层底板上的薄层空气上。 定位组件包括多个空气轴承边缘辊或气流袋，其用于将衬底定位在上部基板的上方所期望的取向。 多个倾斜的孔或气流袋被配置在上基板中，用于使气体流过其中以旋转基板以确保在加工期间的均匀加热。
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9.发明申请Apparatus and Method for Enhancing the Cool Down of Radiatively Heated Substrates 有权用于增强放热加热基板的冷却的装置和方法公开(公告)号：US20110123178A1
公开(公告)日：2011-05-26
申请号：US12622736
申请日：2009-11-20
IPC分类号： F27B5/06
CPC分类号： H01L21/324 , H01L21/67109 , H01L21/67115
摘要： The present invention generally relates to methods and apparatus for processing substrates. Embodiments of the invention include apparatuses for processing a substrate comprising a dynamic heat sink that is substantially transparent to light from a radiant heat source, the dynamic heat sink being positioned near the substrate so the two are coupled. Additional embodiments of the invention are directed to methods of processing a substrate using the apparatuses described.
摘要翻译： 本发明一般涉及用于处理衬底的方法和装置。 本发明的实施例包括用于处理衬底的装置，该衬底包括对来自辐射热源的光基本透明的动态散热器，动态散热器位于衬底附近，使得两者耦合。 本发明的另外的实施例涉及使用所述装置处理衬底的方法。
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公开(公告)号：US20110061810A1
公开(公告)日：2011-03-17
申请号：US12720957
申请日：2010-03-10
申请人： Udayan Ganguly , Joseph M. Ranish , Aaron M. Hunter , Jing Tang , Christopher S. Olsen , Matthew D. Scotney-Castle , Vicky Nguyen , Swaminathan Srinivasan , Johanes F. Swenberg , Anchuan Wang , Nitin K. Ingle , Manish Hemkar , Jose A. Marin
发明人： Udayan Ganguly , Joseph M. Ranish , Aaron M. Hunter , Jing Tang , Christopher S. Olsen , Matthew D. Scotney-Castle , Vicky Nguyen , Swaminathan Srinivasan , Johanes F. Swenberg , Anchuan Wang , Nitin K. Ingle , Manish Hemkar , Jose A. Marin
IPC分类号： H01L21/3065
CPC分类号： H01L21/67115 , H01L21/0223 , H01L21/67109 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L21/76232 , H01L27/11521
摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
摘要翻译： 本文描述了用于制造适用于窄间距应用的半导体器件的装置和方法及其制造方法。 公开了通过氧化材料层的表面以形成氧化物层来形成和/或形成材料层的各种单室; 通过蚀刻工艺去除至少一些氧化物层; 并周期性地重复氧化和去除工艺，直到材料层形成所需的形状。 在一些实施例中，材料层可以是半导体器件的浮置栅极。
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