公开(公告)号：US20130217850A1

公开(公告)日：2013-08-22

申请号：US13852194

申请日：2013-03-28

Applicant: JSR CORPORATION

Inventor： Kiyoshi TANAKA ,  Kazunori KUSABIRAKI ,  Takahiro HAYAMA ,  Motoyuki SHIMA

IPC: C09D133/16

CPC classification number: C09D135/02 ,  C08F20/28 ,  C08F220/28 ,  C08F2220/281 ,  C09D133/16 ,  G03F7/11 ,  G03F7/2041

Abstract: An immersion upper layer film-forming composition includes [A] a polymer component that includes a polymer (A1), and [B] a solvent, the polymer (A1) including a structural unit (I) that includes a group represented by the following formula (i). The structural unit (I) is preferably a structural unit (I-1) represented by the following formula (1). The polymer component [A] preferably further includes a structural unit (II-1) represented by the following formula (2), the structural unit (II-1) being included in the polymer (A1) or a polymer other than the polymer (A1). The polymer component [A] preferably further includes a structural unit (III) that includes a carboxyl group, the structural unit (III) being included in the polymer (A1) or a polymer other than the polymer (A1).

Abstract translation: 浸渍上层成膜组合物包括[A]包含聚合物（A1）的聚合物组分和[B]溶剂，包含结构单元（I）的聚合物（A1）包括由下列 式（i）。 结构单元（I）优选为由下式（1）表示的结构单元（I-1）。 聚合物组分[A]优选还包括由下式（2）表示的结构单元（II-1），包含在聚合物（A1）中的结构单元（II-1）或除聚合物 A1）。 聚合物组分[A]优选还包括包含羧基的结构单元（III），包含在聚合物（A1）中的结构单元（III）或聚合物（A1）以外的聚合物。

公开(公告)号：US20170240851A1

公开(公告)日：2017-08-24

申请号：US15590326

申请日：2017-05-09

Applicant: JSR CORPORATION

Inventor： Kenji MOCHIDA ,  Motoyuki SHIMA

IPC: C11D11/00 ,  C11D3/37 ,  C11D3/24 ,  C11D3/20 ,  B08B7/00 ,  C08F132/08 ,  C08F120/24 ,  C08F120/18 ,  C08K5/092 ,  H01L21/02 ,  C11D3/43 ,  C08F120/28

CPC classification number: C11D11/0047 ,  B08B7/0014 ,  C08F120/18 ,  C08F120/24 ,  C08F120/28 ,  C08F132/08 ,  C08K5/092 ,  C11D3/2086 ,  C11D3/245 ,  C11D3/373 ,  C11D3/43 ,  C11D7/50 ,  C11D11/0058 ,  H01L21/02052

Abstract: A cleaning composition for a semiconductor substrate contains a solvent, and a polymer that includes a fluorine atom, a silicon atom or a combination thereof. The content of water in the solvent is preferably no greater than 20% by mass. The cleaning composition preferably further contains an organic acid which is a non-polymeric acid. The organic acid is preferably a polyhydric carboxylic acid. The acid dissociation constant of the polymer is preferably less than that of the organic acid. The solubility of the organic acid in water at 25° C. is preferably no less than 5% by mass. The organic acid is preferably a solid at 25° C.

公开(公告)号：US20150048051A1

公开(公告)日：2015-02-19

申请号：US14457724

申请日：2014-08-12

Applicant: JSR CORPORATION

Inventor： Yuichiro KATSURA ,  Ryu MATSUMOTO ,  Motoyuki SHIMA ,  Yuji Yada ,  Ken NAKAKURA

IPC: G03F7/038 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26

CPC classification number: G03F7/0392 ,  G03F7/0045 ,  G03F7/162 ,  G03F7/20 ,  G03F7/26

Abstract: A resist pattern-forming method is provided, including: providing a resist film using a photoresist composition; exposing the resist film; and developing the resist film exposed, the photoresist composition containing a polymer having a weight average molecular weight of no less than 1,000 and no greater than 7,500 and having a structural unit that includes an acid-labile group that is dissociated by an action of an acid, a radiation-sensitive acid generator and a solvent composition, and the photoresist composition having a content of solids of no less than 20% by mass and no greater than 60% by mass. The photoresist composition preferably has a viscosity of no less than 50 mPa·s and no greater than 150 mPa·s at 25° C.

Abstract translation: 提供了抗蚀剂图案形成方法，包括：使用光致抗蚀剂组合物提供抗蚀剂膜; 曝光抗蚀膜; 并且显影所述抗蚀剂膜，所述光致抗蚀剂组合物含有重均分子量不小于1,000且不大于7,500的聚合物，并且具有包含通过酸的作用解离的酸不稳定基团的结构单元 ，辐射敏感性酸产生剂和溶剂组合物，并且所述光致抗蚀剂组合物具有不小于20质量％且不大于60质量％的固体含量。 光致抗蚀剂组合物优选在25℃下的粘度不小于50mPa·s且不大于150mPa·s。

公开(公告)号：US20130084524A1

公开(公告)日：2013-04-04

申请号：US13630263

申请日：2012-09-28

Applicant: JSR CORPORATION

Inventor： Takahiro HAYAMA ,  Kazunori KUSABIRAKI ,  Kiyoshi TANAKA ,  Motoyuki SHIMA

IPC: G03F7/004 ,  G03F7/20

CPC classification number: G03F7/0046 ,  G03F7/11 ,  G03F7/2041

Abstract: A composition for forming a liquid immersion upper layer film, includes a first polymer, a second polymer and a solvent. The first polymer includes a first structural unit having a group represented by a following formula (i). In the formula (i), n is an integer of 1 to 3, and R1 represents a hydrocarbon group having a valency of (n+1) and having 1 to 20 carbon atoms. The second polymer is different from the first polymer. —R1OH)n  (i)

Abstract translation: 一种用于形成液浸上层膜的组合物，包括第一聚合物，第二聚合物和溶剂。 第一聚合物包括具有由下式（i）表示的基团的第一结构单元。 式（i）中，n为1〜3的整数，R1表示碳原子数为1〜20的化合价的（n + 1）的烃基。 第二聚合物不同于第一聚合物。 -R1OHOH）n（i）

公开(公告)号：US20160266489A1

公开(公告)日：2016-09-15

申请号：US15164047

申请日：2016-05-25

Applicant: JSR CORPORATION

Inventor： Yuichiro KATSURA ,  Ryu MATSUMOTO ,  Motoyuki SHIMA ,  Yuji YADA ,  Ken NAKAKURA

IPC: G03F7/039

CPC classification number: G03F7/0392 ,  G03F7/0045 ,  G03F7/162 ,  G03F7/20 ,  G03F7/26

Abstract: A resist pattern-forming method is provided, including: providing a resist film using a photoresist composition; exposing the resist film; and developing the resist film exposed, the photoresist composition containing a polymer having a weight average molecular weight of no less than 1,000 and no greater than 7,500 and having a structural unit that includes an acid-labile group that is dissociated by an action of an acid, a radiation-sensitive acid generator and a solvent composition, and the photoresist composition having a content of solids of no less than 20% by mass and no greater than 60% by mass. The photoresist composition preferably has a viscosity of no less than 50 mPa·s and no greater than 150 mPa·s at 25° C.

公开(公告)号：US20160032227A1

公开(公告)日：2016-02-04

申请号：US14810981

申请日：2015-07-28

Applicant: JSR CORPORATION

Inventor： Kenji MOCHIDA ,  Motoyuki SHIMA

IPC: C11D11/00

CPC classification number: C11D11/0047 ,  B08B7/0014 ,  C08F120/18 ,  C08F120/24 ,  C08F120/28 ,  C08F132/08 ,  C08K5/092 ,  C11D3/2086 ,  C11D3/245 ,  C11D3/373 ,  C11D3/43 ,  C11D7/50 ,  C11D11/0058 ,  H01L21/02052

Abstract: A cleaning composition for a semiconductor substrate contains a solvent, and a polymer that includes a fluorine atom, a silicon atom or a combination thereof. The content of water in the solvent is preferably no greater than 20% by mass. The cleaning composition preferably further contains an organic acid which is a non-polymeric acid. The organic acid is preferably a polyhydric carboxylic acid. The acid dissociation constant of the polymer is preferably less than that of the organic acid. The solubility of the organic acid in water at 25° C. is preferably no less than 5% by mass. The organic acid is preferably a solid at 25° C.

Abstract translation: 用于半导体衬底的清洁组合物含有溶剂和包含氟原子，硅原子或其组合的聚合物。 溶剂中的水的含量优选为20质量％以下。 清洁组合物优选还包含作为非聚合酸的有机酸。 有机酸优选为多元羧酸。 聚合物的酸解离常数优选小于有机酸的酸解离常数。 有机酸在25℃的水中的溶解度优选为5质量％以上。 有机酸优选在25℃下为固体。

公开(公告)号：US20140147794A1

公开(公告)日：2014-05-29

申请号：US14170659

申请日：2014-02-03

Applicant: JSR CORPORATION

Inventor： Norihiko SUGIE ,  Kazunori KUSABIRAKI ,  Kiyoshi TANAKA ,  Motoyuki SHIMA ,  Yoshikazu YAMAGUCHI

IPC: G03F7/038 ,  G03F7/20

CPC classification number: G03F7/038 ,  G03F7/11 ,  G03F7/2041

Abstract: A method of forming a photoresist pattern includes providing a photoresist film on a substrate. An upper layer film is provided on the photoresist film using an upper layer film-forming composition. Radiation is applied to the upper layer film and the photoresist film through a mask having a given pattern via an immersion medium. The upper layer film and the photoresist film are developed using a developer to form a photoresist pattern. The upper layer film-forming composition includes a resin soluble in the developer and a solvent component. The solvent component includes a first solvent, a second solvent shown by a general formula (2), and a third solvent shown by a general formula (3). The first solvent is diethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, diethylene glycol diethyl ether, γ-butyrolactone, methyl propylene diglycol, methyl propylene triglycol or a mixture thereof. R—OH  (2) R1—O—R2  (3)

Abstract translation: 形成光致抗蚀剂图案的方法包括在基底上提供光致抗蚀剂膜。 使用上层成膜组合物在光致抗蚀剂膜上设置上层膜。 通过浸渍介质通过具有给定图案的掩模将辐射施加到上层膜和光致抗蚀剂膜上。 使用显影剂显影上层膜和光致抗蚀剂膜以形成光致抗蚀剂图案。 上层成膜组合物包括可溶于显影剂的树脂和溶剂组分。 溶剂组分包括第一溶剂，由通式（2）表示的第二溶剂和由通式（3）表示的第三溶剂。 第一溶剂是二乙二醇单乙醚乙酸酯，乙二醇单丁醚乙酸酯，二甘醇二乙醚，γ-丁内酯，甲基丙二
醇二丙烯，甲基丙烯三甘醇或其混合物。 R-OH（2）R1-O-R2（3）

公开(公告)号：US20160035564A1

公开(公告)日：2016-02-04

申请号：US14809373

申请日：2015-07-27

Applicant: TOKYO ELECTRON LIMITED ,  JSR CORPORATION

Inventor： Meitoku AIBARA ,  Yuki YOSHIDA ,  Hisashi KAWANO ,  Masami YAMASHITA ,  Itaru KANNO ,  Kenji MOCHIDA ,  Motoyuki SHIMA

IPC: H01L21/02 ,  B08B3/08

CPC classification number: H01L21/02057 ,  B08B3/08 ,  H01L21/02041 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/6715

Abstract: An object of the present invention is to be able to obtain a high removing performance of particles. The substrate processing method according to the exemplary embodiment comprises a film-forming treatment solution supply step and a removing solution supply step. The film-forming treatment solution supply step comprising supplying to a substrate, a film-forming treatment solution containing an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent is supplied. The removing solution supply step comprises supplying to a treatment film formed by solidification or curing of the film-forming treatment solution on the substrate, a removing solution capable of removing the treatment film.

Abstract translation: 本发明的目的是能够获得颗粒的高去除性能。 根据示例性实施例的基板处理方法包括成膜处理溶液供应步骤和去除溶液供应步骤。 提供成膜处理溶液供应步骤，其包括供给基材，含有有机溶剂的成膜处理溶液和可溶于有机溶剂的含氟聚合物。 去除溶液供给步骤包括向通过基板上的成膜处理溶液的固化或固化形成的处理膜提供能够除去处理膜的去除溶液。

公开(公告)号：US20140080066A1

公开(公告)日：2014-03-20

申请号：US14059596

申请日：2013-10-22

Applicant: JSR CORPORATION

Inventor： Kanako MEYA ,  Takeo SHIOYA ,  Motoyuki SHIMA

IPC: G03F7/20

CPC classification number: G03F7/2022 ,  G03F7/0035 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/322 ,  G03F7/325 ,  G03F7/40 ,  H01L21/0274

Abstract: A double patterning method includes providing a first resist film on a substrate using a first photoresist composition. The first resist film is exposed. The exposed first resist film is developed using a first developer to form a first resist pattern. A second resist film is provided in at least space areas of the first resist pattern using a second photoresist composition. The second resist film is exposed. The exposed second resist film is developed using a second developer that includes an organic solvent to form a second resist pattern. The first resist pattern is insoluble or scarcely soluble in the second developer.

Abstract translation: 双重图案化方法包括使用第一光致抗蚀剂组合物在基板上提供第一抗蚀剂膜。 第一个抗蚀剂膜被暴露。 使用第一显影剂显影露出的第一抗蚀剂膜以形成第一抗蚀剂图案。 使用第二光致抗蚀剂组合物在第一抗蚀剂图案的至少空间区域中设置第二抗蚀剂膜。 曝光第二抗蚀剂膜。 使用包括有机溶剂的第二显影剂显影第二抗蚀剂膜以形成第二抗蚀剂图案。 第一抗蚀剂图案不溶于或几乎不溶于第二显影剂。