公开(公告)号：US20140220783A1

公开(公告)日：2014-08-07

申请号：US14249432

申请日：2014-04-10

Applicant: JSR Corporation

Inventor： Kazuhiko KOUMURA ,  Shinya MINEGISHI ,  Takashi MORI ,  Kyoyu YASUDA ,  Yoshio TAKIMOTO ,  Shinya NAKAFUJI ,  Toru KIMURA

IPC: H01L21/308

CPC classification number: H01L21/3081 ,  G03F7/094 ,  H01L21/02164 ,  H01L21/0271 ,  H01L21/033 ,  H01L21/31116 ,  H01L21/31138

Abstract: A pattern-forming method includes providing a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a first polymer having a glass transition temperature of 0 to 180° C. A silicon-based oxide film is provided on a surface of the resist underlayer film. A resist pattern is provided on a surface of the silicon-based oxide film using a resist composition. The silicon-based oxide film and the resist underlayer film are sequentially dry-etched using the resist pattern as a mask. The substrate is dry-etched using the dry-etched resist underlayer film as a mask.

Abstract translation: 图案形成方法包括使用抗蚀剂下层膜形成组合物在基板上提供抗蚀剂下层膜。 抗蚀剂下层膜形成组合物包括玻璃化转变温度为0至180℃的第一聚合物。在抗蚀剂下层膜的表面上提供硅基氧化物膜。 使用抗蚀剂组合物在硅基氧化膜的表面上设置抗蚀剂图案。 使用抗蚀剂图案作为掩模，依次干蚀刻硅基氧化物膜和抗蚀剂下层膜。 使用干蚀刻抗蚀剂下层膜作为掩模对基板进行干蚀刻。

公开(公告)号：US20130084705A1

公开(公告)日：2013-04-04

申请号：US13630340

申请日：2012-09-28

Applicant: JSR CORPORATION

Inventor： Shinya NAKAFUJI ,  Satoru MURAKAMI ,  Yoshio TAKIMOTO ,  Masayuki MOTONARl

IPC: C08G61/02 ,  C08G65/00 ,  C08F238/02 ,  H01L21/306

CPC classification number: G03F7/095 ,  C08G61/02 ,  C08G2261/3422 ,  G03F7/0384 ,  H01L21/0271

Abstract: A method for forming a pattern includes providing a resist underlayer film on a substrate using a first composition for forming a resist underlayer film. The first composition includes a polymer having a structural unit represented by a following formula (1). In the formula (1), Ar1 and Ar2 each independently represent a bivalent group represented by a following formula (2). A resist coating film is provided on the resist underlayer film using a resist composition. A resist pattern is formed using the resist coating film. A predetermined pattern is formed on the substrate by sequentially dry-etching the resist underlayer film and the substrate using the resist pattern as a mask.

Abstract translation: 形成图案的方法包括使用第一组合物形成抗蚀剂下层膜，在基片上提供抗蚀剂下层膜。 第一组合物包括具有由下式（1）表示的结构单元的聚合物。 在式（1）中，Ar 1和Ar 2各自独立地表示由下式（2）表示的二价基团。 使用抗蚀剂组合物在抗蚀剂下层膜上设置抗蚀剂涂膜。 使用抗蚀剂涂膜形成抗蚀剂图案。 通过使用抗蚀剂图案作为掩模，依次干蚀刻抗蚀剂下层膜和基板，在基板上形成预定图案。

公开(公告)号：US20130310514A1

公开(公告)日：2013-11-21

申请号：US13948107

申请日：2013-07-22

Applicant: JSR Corporation

Inventor： Shin-ya MINEGISHI ,  Yushi MATSUMURA ,  Shinya NAKAFUJI ,  Kazuhiko KOMURA ,  Takanori NAKANO ,  Satoru MURAKAMI ,  Kyoyu YASUDA ,  Makoto SUGIURA

IPC: G03F7/09

CPC classification number: G03F7/091 ,  C08G8/08 ,  C08L61/06 ,  G03F7/094

Abstract: A resist underlayer film-forming composition includes a polymer including a repeating unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and a solvent. Each of R3 to R8 individually represent a group shown by the following formula (2) or the like. R1 represents a single bond or the like. R2 represents a hydrogen atom or the like.

Abstract translation: 抗蚀剂下层膜形成组合物包括含有式（1）所示的重复单元，聚苯乙烯换算的重均分子量为3000〜10,000的聚合物和溶剂。 R 3〜R 8各自独立地表示下述式（2）所示的基团等。 R1表示单键等。 R2表示氢原子等。