公开(公告)号：US20130310514A1

公开(公告)日：2013-11-21

申请号：US13948107

申请日：2013-07-22

Applicant: JSR Corporation

Inventor： Shin-ya MINEGISHI ,  Yushi MATSUMURA ,  Shinya NAKAFUJI ,  Kazuhiko KOMURA ,  Takanori NAKANO ,  Satoru MURAKAMI ,  Kyoyu YASUDA ,  Makoto SUGIURA

IPC: G03F7/09

CPC classification number: G03F7/091 ,  C08G8/08 ,  C08L61/06 ,  G03F7/094

Abstract: A resist underlayer film-forming composition includes a polymer including a repeating unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and a solvent. Each of R3 to R8 individually represent a group shown by the following formula (2) or the like. R1 represents a single bond or the like. R2 represents a hydrogen atom or the like.

Abstract translation: 抗蚀剂下层膜形成组合物包括含有式（1）所示的重复单元，聚苯乙烯换算的重均分子量为3000〜10,000的聚合物和溶剂。 R 3〜R 8各自独立地表示下述式（2）所示的基团等。 R1表示单键等。 R2表示氢原子等。

公开(公告)号：US20140220783A1

公开(公告)日：2014-08-07

申请号：US14249432

申请日：2014-04-10

Applicant: JSR Corporation

Inventor： Kazuhiko KOUMURA ,  Shinya MINEGISHI ,  Takashi MORI ,  Kyoyu YASUDA ,  Yoshio TAKIMOTO ,  Shinya NAKAFUJI ,  Toru KIMURA

IPC: H01L21/308

CPC classification number: H01L21/3081 ,  G03F7/094 ,  H01L21/02164 ,  H01L21/0271 ,  H01L21/033 ,  H01L21/31116 ,  H01L21/31138

Abstract: A pattern-forming method includes providing a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a first polymer having a glass transition temperature of 0 to 180° C. A silicon-based oxide film is provided on a surface of the resist underlayer film. A resist pattern is provided on a surface of the silicon-based oxide film using a resist composition. The silicon-based oxide film and the resist underlayer film are sequentially dry-etched using the resist pattern as a mask. The substrate is dry-etched using the dry-etched resist underlayer film as a mask.

Abstract translation: 图案形成方法包括使用抗蚀剂下层膜形成组合物在基板上提供抗蚀剂下层膜。 抗蚀剂下层膜形成组合物包括玻璃化转变温度为0至180℃的第一聚合物。在抗蚀剂下层膜的表面上提供硅基氧化物膜。 使用抗蚀剂组合物在硅基氧化膜的表面上设置抗蚀剂图案。 使用抗蚀剂图案作为掩模，依次干蚀刻硅基氧化物膜和抗蚀剂下层膜。 使用干蚀刻抗蚀剂下层膜作为掩模对基板进行干蚀刻。

公开(公告)号：US20130273476A1

公开(公告)日：2013-10-17

申请号：US13852120

申请日：2013-03-28

Applicant: JSR CORPORATION

Inventor： Shin-ya MINEGISHI ,  Satoru MURAKAMI ,  Yushi MATSUMURA ,  Kazuhiko KOMURA ,  Yoshio TAKIMOTO ,  Shin-ya NAKAFUJI ,  Kyoyu YASUDA

IPC: G03F7/004

CPC classification number: G03F7/004 ,  C08G8/08 ,  C08G8/22 ,  C08G8/28 ,  C09D161/06 ,  G03F7/094 ,  G03F7/11 ,  G03F7/26 ,  G03F7/40

Abstract: A pattern-forming method includes: (1) a resist underlayer film-forming step of providing a resist underlayer film on an upper face side of a substrate by coating a resist underlayer film-forming composition containing a resin having a phenolic hydroxyl group; (2) a resist pattern-forming step of forming a resist pattern on an upper face side of the resist underlayer film; (3) a pattern-forming step of dry etching at least the resist underlayer film and the substrate, with the aid of the resist pattern as a mask to form a pattern on the substrate; and (4) a resist underlayer film-removing step of removing the resist underlayer film on the substrate with a basic solution, in the order of (1) to (4).

Abstract translation: 图案形成方法包括：（1）抗蚀剂下层膜形成步骤，通过涂布含有酚羟基的树脂的抗蚀剂下层膜形成组合物，在基材的上表面侧上形成抗蚀剂下层膜; （2）在抗蚀剂下层膜的上表面侧形成抗蚀剂图案的抗蚀剂图案形成工序; （3）借助于抗蚀剂图案作为掩模，至少对抗蚀剂下层膜和基板进行干蚀刻的图案形成步骤，以在基板上形成图案; 以及（4）以（1）〜（4）的顺序用碱性溶液除去基板上的抗蚀剂下层膜的抗蚀剂下层膜除去工序。