公开(公告)号：US12090570B2

公开(公告)日：2024-09-17

申请号：US18373617

申请日：2023-09-27

申请人： JSW AKTINA SYSTEM CO., LTD

发明人： Naoyuki Kobayashi ,  Masashi Machida ,  Hiroaki Imamura

IPC分类号： B23K26/035 ,  B23K26/384 ,  B23K101/40

CPC分类号： B23K26/035 ,  B23K26/384 ,  B23K2101/40

摘要： A laser processing apparatus and a laser processing method that can effectively prevent a processing time for one semiconductor film from increasing are provided. A laser processing apparatus (1) according to an embodiment includes a laser light source (2) configured to irradiate a semiconductor film (M1) with a laser beam, a film state measuring instrument (5) configured to measure a state of the semiconductor film after the semiconductor film (M1) is irradiated with the laser beam, and a laser light adjusting mechanism configured to adjust a timing at which the semiconductor film (M1) is irradiated with a next laser beam and intensity of the laser beam according to the state of the semiconductor film (M1) measured by the film state measuring instrument (5).

公开(公告)号：US11842898B2

公开(公告)日：2023-12-12

申请号：US17259166

申请日：2019-06-19

申请人： JSW AKTINA SYSTEM CO., LTD.

发明人： Suk-Hwan Chung ,  Masashi Machida

IPC分类号： H01L21/268 ,  B23K26/08 ,  H01L21/02 ,  H01L21/20 ,  B23K101/40 ,  B23K26/03 ,  B23K26/0622 ,  B23K26/12 ,  B23K26/352 ,  B23K26/00

CPC分类号： H01L21/268 ,  B23K26/08 ,  H01L21/02675 ,  H01L21/20 ,  B23K2101/40

摘要： Quality of a crystalline film is improved. In a method for manufacturing a panel, a polysilicon film is formed by emission of laser light to an amorphous silicon film 3A through a light-transmittable member 4 that can transmit the laser light.

公开(公告)号：US11813694B2

公开(公告)日：2023-11-14

申请号：US16772072

申请日：2018-02-02

申请人： JSW AKTINA SYSTEM CO., LTD.

发明人： Naoyuki Kobayashi ,  Masashi Machida ,  Hiroaki Imamura

IPC分类号： B23K26/035 ,  B23K26/384 ,  B23K101/40

CPC分类号： B23K26/035 ,  B23K26/384 ,  B23K2101/40

摘要： A laser processing apparatus and a laser processing method that can effectively prevent a processing time for one semiconductor film from increasing are provided. A laser processing apparatus (1) according to an embodiment includes a laser light source (2) configured to irradiate a semiconductor film (M1) with a laser beam, a film state measuring instrument (5) configured to measure a state of the semiconductor film after the semiconductor film (M1) is irradiated with the laser beam, and a laser light adjusting mechanism configured to adjust a timing at which the semiconductor film (M1) is irradiated with a next laser beam and intensity of the laser beam according to the state of the semiconductor film (M1) measured by the film state measuring instrument (5).

公开(公告)号：US11810799B2

公开(公告)日：2023-11-07

申请号：US16342182

申请日：2017-10-10

申请人： JSW AKTINA SYSTEM CO., LTD.

发明人： Suk-Hwan Chung ,  Masashi Machida

IPC分类号： H01L21/67 ,  B23K26/082 ,  B23K26/14 ,  B23K26/50 ,  H01L21/268 ,  H01L21/324

CPC分类号： H01L21/67115 ,  B23K26/082 ,  B23K26/1437 ,  B23K26/50 ,  H01L21/268 ,  H01L21/324

摘要： A laser processing apparatus includes: a scan moving unit which moves one or both of a workpiece and a laser beam; a laser beam irradiation unit which irradiates the workpiece with the laser beam; and a gas discharge unit which discharges at least a first gas to an irradiation area irradiated with the laser beam in the workpiece. The gas discharge unit has a rectifying surface at a position facing the workpiece during laser beam irradiation. The rectifying surface is provided with a first gas discharge port through which the first gas is discharged; and one or both of a second gas discharge port and a gas front-back suction port. The second gas discharge port discharges a second gas to the workpiece during laser beam irradiation on both outer sides of the first gas discharge port at least in the scanning direction.

公开(公告)号：US11676818B2

公开(公告)日：2023-06-13

申请号：US17077033

申请日：2020-10-22

申请人： JSW AKTINA SYSTEM CO., LTD.

发明人： Daisuke Ito ,  Tamotsu Odajima ,  Ryo Shimizu ,  Masashi Machida ,  Tatsuro Matsushima

IPC分类号： H01L21/00 ,  H01L21/20 ,  B23K26/70 ,  H01L29/66 ,  B23K26/08 ,  B23K26/12 ,  B23K26/00 ,  B23K26/066 ,  B23K26/06 ,  H01L27/12 ,  H10K50/11 ,  H01L21/268 ,  H01L29/786 ,  B23K103/00 ,  B23K101/40

CPC分类号： H01L21/2003 ,  B23K26/0006 ,  B23K26/066 ,  B23K26/0643 ,  B23K26/0861 ,  B23K26/125 ,  B23K26/127 ,  B23K26/703 ,  B23K26/705 ,  H01L21/268 ,  H01L27/1285 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78663 ,  H10K50/11 ,  B23K2101/40 ,  B23K2103/50

摘要： A laser irradiation apparatus (1) according to an embodiment includes an optical-system module (20) configured to apply laser light (L1) to an object to be irradiated, a shield plate (51) in which a slit (54) is formed, through which the laser light (L1) passes, and a reflected-light receiving component (61) disposed between the optical-system module (20) and the shield plate (51), in which the reflected-light receiving component (61) is able to receive, out of the laser light (L1), reflected light (R1) reflected by the shield plate (51).