摘要:
Disclosed is a method of manufacturing an organic light-emitting display device capable of improving efficiency of a laser generator used for crystallization of amorphous silicon. The method crystallizes amorphous silicon selectively to provide an organic light-emitting display device that includes channel area of a pixel contains polycrystalline silicon and storage area of the pixel contains amorphous silicon.
摘要:
An array test method of an organic light emitting diode (OLED) display substrate is provided. The OLED display substrate includes a plurality of pixel circuits. Each pixel circuit includes an anode, a first transistor for transmitting a data signal that controls an amount of light emission of an OLED according to a scan signal, a driving transistor for receiving the data signal, generating a driving current corresponding to the data signal, and transmitting the driving current to the OLED, and a second transistor for diode-connecting a gate electrode and a drain electrode of the driving transistor. The array test method includes: injecting electrons or holes that generate an initialization voltage into the anode by turning on the second transistor; radiating electron beams at the anode; and determining whether or not the driving transistor performs normal operation from an amount of secondary electrons emitted from the anode.
摘要:
A photo sensor, a method of manufacturing the photo sensor, and a display apparatus, the photo sensor including a substrate; a light receiving unit on the substrate, the light receiving unit including an amorphous semiconductor material; a first adjacent unit and a second adjacent unit formed as one body with the light receiving unit, the first adjacent unit and the second adjacent unit being separated from each other by the light receiving unit; a first photo sensor electrode electrically connected to the first adjacent unit; and a second photo sensor electrode electrically connected to the second adjacent unit, wherein at least one of the first adjacent unit and the second adjacent unit includes a crystalline semiconductor material.
摘要:
A laser irradiation apparatus for irradiating a laser beam to a semiconductor layer including a plurality of pixel areas, the apparatus includes a laser generator generating the laser beam, and an optical switching unit time-dividing the laser beam generated from the laser generator and transmitting a plurality of time-divided laser beams to a plurality of optical systems. The apparatus includes a first optical system of the plurality of optical systems that receives a first time-divided laser beam and irradiates a first laser slit beam along a first irradiation direction, and a second optical system of the plurality of optical systems that receives a second time-divided laser beam and irradiates a second laser slit beam along a second irradiation direction that is parallel with the first irradiation direction. The first laser slit beam and the second laser slit beam crystallize partial areas at a same location in the respective pixel areas.
摘要:
A photo diode includes an intrinsic region on a substrate, a P+ doping region in a first portion of the intrinsic region, and an oxide semiconductor region. The oxide semiconductor region is spaced apart from the P+ doping region on a second portion of the intrinsic region and the second portion of the intrinsic region is different from the first portion of the intrinsic region.
摘要:
In a photosensor and a method of manufacturing the same, the photosensor comprises: an intrinsic silicon layer formed on a substrate; a P-type doped region formed in a same plane with the intrinsic silicon layer; and an oxide semiconductor layer formed on or under the intrinsic silicon layer, and overlapping an entire region of the intrinsic silicon layer.
摘要:
A laser crystallization system and a method of manufacturing a display apparatus using the laser crystallization system are disclosed. In one embodiment, the system includes i) a mother substrate in which first, second, and third display regions and ii) a stage for supporting the mother substrate and moving in first and second directions perpendicular to each other. The embodiment also includes i) a first laser irradiation unit for irradiating a first laser beam having a width greater than or identical to a width of a side of one of the first, second, and third display regions in the first direction and ii) a second laser irradiation unit spaced apart from the first laser irradiation unit and irradiating a second laser beam having a width greater than or identical to the width of the one side in the first direction.
摘要:
An embodiment is directed to a method of manufacturing a polycrystalline silicon layer, the method including providing a crystallization substrate, the crystallization substrate having an amorphous silicon layer on a first substrate, providing a reflection substrate, the reflection substrate having a first region with a reflection panel therein and a second region without the reflection panel, disposing the crystallization substrate and the reflection substrate on one another, and selectively crystallizing the amorphous silicon layer by directing a laser beam onto the crystallization substrate and the reflection substrate, and reflecting the laser beam from the reflection panel.
摘要:
An organic light-emitting display apparatus includes a first insulating layer, a second insulating layer on the first insulating layer and including an unevenness portion, a third insulating layer on the second insulating layer, a pixel electrode on the third insulating layer, an opposite electrode facing the pixel electrode, and an organic emission layer between the pixel electrode and the opposite electrode; a thin film transistor including an active layer, a gate electrode, and source/drain electrodes connected to the active layer, the first insulating layer being between the active layer and the gate electrode and the second insulating layer being between the gate electrode, and the source/drain electrodes; and a capacitor including a lower electrode on a same layer as the gate electrode, a dielectric layer of a same material as the third insulating layer, and an upper electrode on a same layer as the pixel electrode.
摘要:
A photo diode includes an intrinsic region on a substrate, a P+ doping region in a first portion of the intrinsic region, and an oxide semiconductor region. The oxide semiconductor region is spaced apart from the P+ doping region on a second portion of the intrinsic region and the second portion of the intrinsic region is different from the first portion of the intrinsic region.