公开(公告)号：US07569401B2

公开(公告)日：2009-08-04

申请号：US12048082

申请日：2008-03-13

申请人： Jae-Hyun Park ,  Hyeong-Jun Kim ,  Won-Cheol Jeong ,  Chang-Wook Jeong ,  Hong-sik Jeong ,  Gi-Tae Jeong

发明人： Jae-Hyun Park ,  Hyeong-Jun Kim ,  Won-Cheol Jeong ,  Chang-Wook Jeong ,  Hong-sik Jeong ,  Gi-Tae Jeong

IPC分类号： H01L21/00

CPC分类号： H01L27/228 ,  B82Y10/00 ,  H01L43/08 ,  H01L43/12

摘要： Magnetic RAM cells have split sub-digit lines surrounded by cladding layers and methods of fabricating the same are provided. The magnetic RAM cells include first and second sub-digit lines formed over a semiconductor substrate. Only a bottom surface and an outer sidewall of the first sub-digit line are covered with a first cladding layer pattern. In addition, only a bottom surface and an outer sidewall of the second sub-digit line are covered with a second cladding layer pattern. The outer sidewall of the first sub-digit line is located distal from the second sub-digit line and the outer sidewall of the second sub-digit line is located distal the first sub-digit line. Methods of fabricating the magnetic RAM cells are also provided.

摘要翻译： 磁性RAM单元具有由包覆层包围的分割的子数字线，并且提供其制造方法。 磁性RAM单元包括在半导体衬底上形成的第一和第二子数字线。 只有第一子数字线的底表面和外侧壁被第一覆层图案覆盖。 此外，仅第二子数字线的底表面和外侧壁被第二包层图案覆盖。 第一子数字线的外侧壁位于远离第二子数字线的位置，第二子数字线的外侧壁位于第一子数字线的远侧。 还提供了制造磁性RAM单元的方法。

公开(公告)号：US20080160643A1

公开(公告)日：2008-07-03

申请号：US12048082

申请日：2008-03-13

申请人： Jae-Hyun Park ,  Hyeong-Jun Kim ,  Won-Cheol Jeong ,  Chang-Wook Jeong ,  Hong-sik Jeong ,  Gi-Tae Jeong

发明人： Jae-Hyun Park ,  Hyeong-Jun Kim ,  Won-Cheol Jeong ,  Chang-Wook Jeong ,  Hong-sik Jeong ,  Gi-Tae Jeong

IPC分类号： H01L43/12

CPC分类号： H01L27/228 ,  B82Y10/00 ,  H01L43/08 ,  H01L43/12

摘要： Magnetic RAM cells have split sub-digit lines surrounded by cladding layers and methods of fabricating the same are provided. The magnetic RAM cells include first and second sub-digit lines formed over a semiconductor substrate. Only a bottom surface and an outer sidewall of the first sub-digit line are covered with a first cladding layer pattern. In addition, only a bottom surface and an outer sidewall of the second sub-digit line are covered with a second cladding layer pattern. The outer sidewall of the first sub-digit line is located distal from the second sub-digit line and the outer sidewall of the second sub-digit line is located distal the first sub-digit line. Methods of fabricating the magnetic RAM cells are also provided.

摘要翻译： 磁性RAM单元具有由包覆层包围的分割的子数字线，并且提供其制造方法。 磁性RAM单元包括在半导体衬底上形成的第一和第二子数字线。 只有第一子数字线的底表面和外侧壁被第一覆层图案覆盖。 此外，仅第二子数字线的底表面和外侧壁被第二包层图案覆盖。 第一子数字线的外侧壁位于远离第二子数字线的位置，第二子数字线的外侧壁位于第一子数字线的远侧。 还提供了制造磁性RAM单元的方法。

公开(公告)号：US20050205952A1

公开(公告)日：2005-09-22

申请号：US11077669

申请日：2005-03-11

申请人： Jae-Hyun Park ,  Hyeong-Jun Kim ,  Won-Cheol Jeong ,  Chang-Wook Jeong ,  Hong-sik Jeong ,  Gi-Tae Jeong

发明人： Jae-Hyun Park ,  Hyeong-Jun Kim ,  Won-Cheol Jeong ,  Chang-Wook Jeong ,  Hong-sik Jeong ,  Gi-Tae Jeong

IPC分类号： H01L21/00 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01L27/228 ,  B82Y10/00 ,  H01L43/08 ,  H01L43/12

摘要： Magnetic RAM cells have split sub-digit lines surrounded by cladding layers and methods of fabricating the same are provided. The magnetic RAM cells include first and second sub-digit lines formed over a semiconductor substrate. Only a bottom surface and an outer sidewall of the first sub-digit line are covered with a first cladding layer pattern. In addition, only a bottom surface and an outer sidewall of the second sub-digit line are covered with a second cladding layer pattern. The outer sidewall of the first sub-digit line is located distal from the second sub-digit line and the outer sidewall of the second sub-digit line is located distal the first sub-digit line. Methods of fabricating the magnetic RAM cells are also provided.

摘要翻译： 磁性RAM单元具有由包覆层包围的分割的子数字线，并且提供其制造方法。 磁性RAM单元包括在半导体衬底上形成的第一和第二子数字线。 只有第一子数字线的底表面和外侧壁被第一覆层图案覆盖。 此外，仅第二子数字线的底表面和外侧壁被第二包层图案覆盖。 第一子数字线的外侧壁位于远离第二子数字线的位置，第二子数字线的外侧壁位于第一子数字线的远侧。 还提供了制造磁性RAM单元的方法。

公开(公告)号：US20060034117A1

公开(公告)日：2006-02-16

申请号：US11201495

申请日：2005-08-11

申请人： Won-Cheol Jeong ,  Ki-Nam Kim ,  Hong-Sik Jeong ,  Gi-Tae Jeong ,  Jae-Hyun Park

发明人： Won-Cheol Jeong ,  Ki-Nam Kim ,  Hong-Sik Jeong ,  Gi-Tae Jeong ,  Jae-Hyun Park

IPC分类号： G11C11/14

CPC分类号： G11C11/16

摘要： Methods are provided for operating a magnetic random access memory device including a memory cell having a magnetic tunnel junction structure on a substrate. In particular, a writing current pulse may be provided through the magnetic tunnel junction structure, and a writing magnetic field pulse may be provided through the magnetic tunnel junction structure. In addition, at least a portion of the writing magnetic field pulse may be overlapping in time with respect to at least a portion of the writing current pulse, and at least a portion of the writing current pulse and/or at least a portion of the writing magnetic field pulse may be non-overlapping in time with respect to the other. Related devices are also discussed.

摘要翻译： 提供了用于操作包括在衬底上具有磁性隧道结结构的存储单元的磁性随机存取存储器件的方法。 特别地，可以通过磁性隧道结结构提供写入电流脉冲，并且可以通过磁性隧道结结构提供写入磁场脉冲。 此外，写入磁场脉冲的至少一部分可以相对于写入电流脉冲的至少一部分在时间上重叠，并且写入电流脉冲的至少一部分和/或至少一部分 写入磁场脉冲可能在时间上相对于另一个不重叠。 还讨论了相关设备。

公开(公告)号：US07164598B2

公开(公告)日：2007-01-16

申请号：US11201495

申请日：2005-08-11

申请人： Won-Cheol Jeong ,  Ki-Nam Kim ,  Hong-Sik Jeong ,  Gi-Tae Jeong ,  Jae-Hyun Park

发明人： Won-Cheol Jeong ,  Ki-Nam Kim ,  Hong-Sik Jeong ,  Gi-Tae Jeong ,  Jae-Hyun Park

IPC分类号： G11C11/00 ,  G11C11/15

CPC分类号： G11C11/16

摘要： Methods are provided for operating a magnetic random access memory device including a memory cell having a magnetic tunnel junction structure on a substrate. In particular, a writing current pulse may be provided through the magnetic tunnel junction structure, and a writing magnetic field pulse may be provided through the magnetic tunnel junction structure. In addition, at least a portion of the writing magnetic field pulse may be overlapping in time with respect to at least a portion of the writing current pulse, and at least a portion of the writing current pulse and/or at least a portion of the writing magnetic field pulse may be non-overlapping in time with respect to the other. Related devices are also discussed.

摘要翻译： 提供了用于操作包括在衬底上具有磁性隧道结结构的存储单元的磁性随机存取存储器件的方法。 特别地，可以通过磁性隧道结结构提供写入电流脉冲，并且可以通过磁性隧道结结构提供写入磁场脉冲。 此外，写入磁场脉冲的至少一部分可以相对于写入电流脉冲的至少一部分在时间上重叠，并且写入电流脉冲的至少一部分和/或至少一部分 写入磁场脉冲可能在时间上相对于另一个不重叠。 还讨论了相关设备。

公开(公告)号：US20070155093A1

公开(公告)日：2007-07-05

申请号：US11586820

申请日：2006-10-26

申请人： Won-Cheol Jeong ,  Hyeong-Jun Kim ,  Se-Ho Lee ,  Jae-Hyun Park ,  Chang-Wook Jeong

发明人： Won-Cheol Jeong ,  Hyeong-Jun Kim ,  Se-Ho Lee ,  Jae-Hyun Park ,  Chang-Wook Jeong

IPC分类号： H01L21/336

CPC分类号： H01L45/06 ,  G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

摘要： A phase-change random-access memory (PRAM) device includes a chalcogenide element, the chalcogenide element comprising a material which can assume a crystalline state or an amorphous state upon application of a heating current. A first contact is connected to a first region of the chalcogenide element and has a first cross-sectional area. A second contact is connected to a second region of the chalcogenide element and having a second cross-sectional area. A first programmable volume of the chalcogenide material is defined in the first region of the chalcogenide element, a state of the first programmable volume being programmable according to a resistance associated with the first contact. A second programmable volume of the chalcogenide material is defined in the second region of the chalcogenide element, a state of the second programmable volume being programmable according to a second resistance associated with the second contact.

摘要翻译： 相变随机存取存储器（PRAM）装置包括硫族化物元素，硫族化物元素包括在施加加热电流时可以呈现结晶状态或非晶状态的材料。 第一触点连接到硫族化物元件的第一区域并且具有第一横截面积。 第二接触件连接到硫族化物元件的第二区域并且具有第二横截面积。 硫族化物材料的第一可编程体积被限定在硫族化物元素的第一区域中，第一可编程体积的状态可根据与第一接触相关联的电阻来编程。 硫族化物材料的第二可编程体积被限定在硫族化物元素的第二区域中，第二可编程体积的状态可根据与第二接触相关联的第二电阻来编程。

公开(公告)号：US07488981B2

公开(公告)日：2009-02-10

申请号：US11018643

申请日：2004-12-21

申请人： Won-Cheol Jeong ,  Hyeong-Jun Kim ,  Jae-Hyun Park ,  Chang-Wook Jeong

发明人： Won-Cheol Jeong ,  Hyeong-Jun Kim ,  Jae-Hyun Park ,  Chang-Wook Jeong

IPC分类号： H01L27/108 ,  H01L29/00 ,  H01L31/036 ,  H01L31/112

CPC分类号： H01L45/06 ,  H01L45/122 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/1675

摘要： Phase change Random Access Memory (PRAM) devices include a substrate and a phase change layer pattern on the substrate. The phase change layer pattern includes a sharp tip and at least one wall that extends from the sharp tip in a direction away from the substrate. At least one contact hole node is provided that contacts the phase change material pattern adjacent the sharp tip.

摘要翻译： 相变随机存取存储器（PRAM）器件包括衬底和衬底上的相变层图案。 相变层图案包括尖锐的尖端和至少一个壁，该壁从尖锐的尖端沿远离​​衬底的方向延伸。 提供了与尖锐尖端相邻的相变材料图案的至少一个接触孔节点。

公开(公告)号：US07092283B2

公开(公告)日：2006-08-15

申请号：US10795600

申请日：2004-03-08

申请人： Won-Cheol Jeong ,  Chang-Wook Jeong ,  Hyeong-Jun Kim ,  Jae-Hyun Park

发明人： Won-Cheol Jeong ,  Chang-Wook Jeong ,  Hyeong-Jun Kim ,  Jae-Hyun Park

IPC分类号： G11C11/00 ,  G11C11/14

CPC分类号： H01L43/08 ,  G11C11/15 ,  G11C11/1675 ,  H01L27/228

摘要： A magnetic random access memory device may include a first electrode on a substrate, a magnetic tunneling junction element electrically connected to the electrode, and a second electrode electrically connected to the first electrode through the magnetic tunneling junction element. In addition, a heat generating layer may be electrically connected in series between the first and second electrodes, and the heat generating layer may provide a relatively high resistance with respect to electrical current flow. Related methods are also discussed.

摘要翻译： 磁性随机存取存储器件可以包括在衬底上的第一电极，电连接到电极的磁性隧道接合元件，以及通过磁性隧道结接合元件电连接到第一电极的第二电极。 此外，发热层可以串联地电连接在第一和第二电极之间，并且发热层可以相对于电流流动提供相对较高的电阻。 还讨论了相关方法。

公开(公告)号：US08119478B2

公开(公告)日：2012-02-21

申请号：US12640567

申请日：2009-12-17

申请人： Won-Cheol Jeong ,  Hyeong-Jun Kim ,  Se-Ho Lee ,  Jae-Hyun Park ,  Chang-Wook Jeong

发明人： Won-Cheol Jeong ,  Hyeong-Jun Kim ,  Se-Ho Lee ,  Jae-Hyun Park ,  Chang-Wook Jeong

IPC分类号： H01L21/336

CPC分类号： H01L45/06 ,  G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

摘要： A phase-change random-access memory (PRAM) device includes a chalcogenide element, the chalcogenide element comprising a material which can assume a crystalline state or an amorphous state upon application of a heating current. A first contact is connected to a first region of the chalcogenide element and has a first cross-sectional area. A second contact is connected to a second region of the chalcogenide element and having a second cross-sectional area. A first programmable volume of the chalcogenide material is defined in the first region of the chalcogenide element, a state of the first programmable volume being programmable according to a resistance associated with the first contact. A second programmable volume of the chalcogenide material is defined in the second region of the chalcogenide element, a state of the second programmable volume being programmable according to a second resistance associated with the second contact.

摘要翻译： 相变随机存取存储器（PRAM）装置包括硫族化物元素，硫族化物元素包括在施加加热电流时可以呈现结晶状态或非晶状态的材料。 第一触点连接到硫族化物元件的第一区域并且具有第一横截面积。 第二接触件连接到硫族化物元件的第二区域并且具有第二横截面积。 硫族化物材料的第一可编程体积被限定在硫族化物元素的第一区域中，第一可编程体积的状态可根据与第一接触相关联的电阻来编程。 硫族化物材料的第二可编程体积被限定在硫族化物元素的第二区域中，第二可编程体积的状态可根据与第二接触相关联的第二电阻来编程。

公开(公告)号：US20100090194A1

公开(公告)日：2010-04-15

申请号：US12640567

申请日：2009-12-17

申请人： Won-Cheol Jeong ,  Hyeong-Jun Kim ,  Se-Ho Lee ,  Jae-Hyun Park ,  Chang-Wook Jeong

发明人： Won-Cheol Jeong ,  Hyeong-Jun Kim ,  Se-Ho Lee ,  Jae-Hyun Park ,  Chang-Wook Jeong

IPC分类号： H01L45/00

CPC分类号： H01L45/06 ,  G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

摘要： A phase-change random-access memory (PRAM) device includes a chalcogenide element, the chalcogenide element comprising a material which can assume a crystalline state or an amorphous state upon application of a heating current. A first contact is connected to a first region of the chalcogenide element and has a first cross-sectional area. A second contact is connected to a second region of the chalcogenide element and having a second cross-sectional area. A first programmable volume of the chalcogenide material is defined in the first region of the chalcogenide element, a state of the first programmable volume being programmable according to a resistance associated with the first contact. A second programmable volume of the chalcogenide material is defined in the second region of the chalcogenide element, a state of the second programmable volume being programmable according to a second resistance associated with the second contact.

摘要翻译： 相变随机存取存储器（PRAM）装置包括硫族化物元素，硫族化物元素包括在施加加热电流时可以呈现结晶状态或非晶状态的材料。 第一触点连接到硫族化物元件的第一区域并且具有第一横截面积。 第二接触件连接到硫族化物元件的第二区域并且具有第二横截面积。 硫族化物材料的第一可编程体积被限定在硫族化物元素的第一区域中，第一可编程体积的状态可根据与第一接触相关联的电阻来编程。 硫族化物材料的第二可编程体积被限定在硫族化物元素的第二区域中，第二可编程体积的状态可根据与第二接触相关联的第二电阻来编程。