摘要:
A semiconductor memory device having a partially controlled delay locked loop includes a delay locked loop and a control signal generator. The control signal generator generates a first control signal and a second control signal, which are responsive to first through fifth mode selection signals for selecting operation modes of the semiconductor memory, device to partially turn the delay locked loop on or off. If the first control signal or the second control signal is activated, a portion of the delay locked loop to which the first or second control signal is applied is turned off. If the first control signal or the second control signal is deactivated, a portion of the delay locked loop to which the first or second control signal is applied is turned on. If the first mode selection signal is activated, only the second control signal is activated. If the second mode selection signal is activated, the first and second control signals are deactivated. If at least one of the third through fifth mode selection signals is activated, the first and second control signals are activated. Since the semiconductor memory device includes a built-in delay locked loop which is partially turned on or off, current consumption of the semiconductor memory device can be reduced.
摘要:
Provided are an interface circuit and a signal clamping circuit using a level-down shifter. The interface circuit includes the level-down shifter between a first power circuit driven by a first power and a second power circuit driven by a second power. The level-down shifter converts an output of the first power circuit that has a voltage level of the first power into an output of a voltage level of the second power. The level-down shifter includes a first circuit unit, a second circuit unit, a third circuit unit, and a fourth circuit unit. The first circuit unit is driven by the first power and receives the output of the first power circuit. The second circuit unit is driven by the second power and receives the output of the first power circuit. The third circuit unit is driven by the second power and receives the output of the first power circuit. The fourth circuit unit is driven by the second power, receives an output of the third circuit unit, and is connected to an output of the second circuit unit.
摘要:
Provided are an interface circuit and a signal clamping circuit using a level-down shifter. The interface circuit includes the level-down shifter between a first power circuit driven by a first power and a second power circuit driven by a second power. The level-down shifter converts an output of the first power circuit that has a voltage level of the first power into an output of a voltage level of the second power. The level-down shifter includes a first circuit unit, a second circuit unit, a third circuit unit, and a fourth circuit unit. The first circuit unit is driven by the first power and receives the output of the first power circuit. The second circuit unit is driven by the second power and receives the output of the first power circuit. The third circuit unit is driven by the second power and receives the output of the first power circuit. The fourth circuit unit is driven by the second power, receives an output of the third circuit unit, and is connected to an output of the second circuit unit.
摘要:
Provided are an interface circuit and a signal clamping circuit using a level-down shifter. The interface circuit includes the level-down shifter between a first power circuit driven by a first power and a second power circuit driven by a second power. The level-down shifter converts an output of the first power circuit that has a voltage level of the first power into an output of a voltage level of the second power. The level-down shifter includes a first circuit unit, a second circuit unit, a third circuit unit, and a fourth circuit unit. The first circuit unit is driven by the first power and receives the output of the first power circuit. The second circuit unit is driven by the second power and receives the output of the first power circuit. The third circuit unit is driven by the second power and receives the output of the first power circuit. The fourth circuit unit is driven by the second power, receives an output of the third circuit unit, and is connected to an output of the second circuit unit.
摘要:
Provided are an interface circuit and a signal clamping circuit using a level-down shifter. The interface circuit includes the level-down shifter between a first power circuit driven by a first power and a second power circuit driven by a second power. The level-down shifter converts an output of the first power circuit that has a voltage level of the first power into an output of a voltage level of the second power. The level-down shifter includes a first circuit unit, a second circuit unit, a third circuit unit, and a fourth circuit unit. The first circuit unit is driven by the first power and receives the output of the first power circuit. The second circuit unit is driven by the second power and receives the output of the first power circuit. The third circuit unit is driven by the second power and receives the output of the first power circuit. The fourth circuit unit is driven by the second power, receives an output of the third circuit unit, and is connected to an output of the second circuit unit.
摘要:
A process-insensitive self-biasing PLL circuit and self-biasing method thereof prevent deterioration of loop stability even when there is a fabrication process variation. The self-biasing PLL circuit includes a phase frequency detector, a main charge pump circuit, an auxiliary charge pump circuit, a first operational amplifier, a second operational amplifier, a voltage-controlled oscillator, a divider, and a bias circuit. In the self-biasing PLL circuit, the first operational amplifier amplifies the voltage of a loop filter capacitor and the second operational amplifier serving as a regulator amplifies the output voltage of the first operational amplifier. The output voltage of the second operational amplifier is used as a control voltage of the voltage-controlled oscillator. Particularly, the bias circuit generates a first bias current using an NMOS transistor, generates a second bias current using a PMOS transistor, and sums up the first and second bias currents to generate a third bias current in response to the output voltage of the second operational amplifier. The first bias current is provided to the main charge pump circuit and the auxiliary charge pump circuit as their bias currents, and the third bias current is provided to the first operational amplifier as its bias current.
摘要:
A process-insensitive self-biasing PLL circuit and self-biasing method thereof prevent deterioration of loop stability even when there is a fabrication process variation. The self-biasing PLL circuit includes a phase frequency detector, a main charge pump circuit, an auxiliary charge pump circuit, a first operational amplifier, a second operational amplifier, a voltage-controlled oscillator, a divider, and a bias circuit. In the self-biasing PLL circuit, the first operational amplifier amplifies the voltage of a loop filter capacitor and the second operational amplifier serving as a regulator amplifies the output voltage of the first operational amplifier. The output voltage of the second operational amplifier is used as a control voltage of the voltage-controlled oscillator. Particularly, the bias circuit generates a first bias current using an NMOS transistor, generates a second bias current using a PMOS transistor, and sums up the first and second bias currents to generate a third bias current in response to the output voltage of the second operational amplifier. The first bias current is provided to the main charge pump circuit and the auxiliary charge pump circuit as their bias currents, and the third bias current is provided to the first operational amplifier as its bias current.