公开(公告)号：US07157798B1

公开(公告)日：2007-01-02

申请号：US10984126

申请日：2004-11-08

申请人： James A. Fair ,  Robert H. Havemann ,  Jungwan Sung ,  Nerissa Taylor ,  Sang-Hyeob Lee ,  Mary Anne Plano

发明人： James A. Fair ,  Robert H. Havemann ,  Jungwan Sung ,  Nerissa Taylor ,  Sang-Hyeob Lee ,  Mary Anne Plano

IPC分类号： H01L23/48

CPC分类号： H01L21/76856 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76889

摘要： A method for creating a refractory metal and refractory metal nitride cap effective for reducing copper electromigration and copper diffusion is described. The method includes depositing a refractory metal nucleation layer and nitriding at least the upper portion of the refractory metal layer to form a refractory metal nitride. Methods to reduce and clean the copper lines before refractory metal deposition are also described. Methods to form a thicker refractory metal layer using bulk deposition are also described.

摘要翻译： 描述了一种用于制造有效减少铜电迁移和铜扩散的难熔金属和难熔金属氮化物盖的方法。 该方法包括沉积难熔金属成核层并至少氮化至难熔金属层的上部以形成难熔金属氮化物。 还描述了在难熔金属沉积之前减少和清洁铜线的方法。 还描述了使用体积沉积形成较厚难熔金属层的方法。

公开(公告)号：US07144806B1

公开(公告)日：2006-12-05

申请号：US10279147

申请日：2002-10-23

申请人： James A. Fair ,  Jungwan Sung ,  Nerissa Taylor

发明人： James A. Fair ,  Jungwan Sung ,  Nerissa Taylor

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/8242

CPC分类号： H01L21/76843 ,  C23C16/14 ,  C23C16/38 ,  C23C16/42 ,  C23C16/45542 ,  H01L21/28562

摘要： An ALD method deposits conformal tantalum-containing material layers on small features of a substrate surface. The method includes the following principal operations: depositing a thin conformal and saturated layer of tantalum-containing precursor over some or all of the substrate surface; using an inert gas or hydrogen plasma to purge the halogen byproducts and unused reactants; reducing the precursor to convert it to a conformal layer of tantalum or tantalum-containing material; using another purge of inert gas or hydrogen plasma to remove the halogen byproducts and unused reactants; and repeating the deposition/reduction cycles until a desired tantalum-containing material layer is achieved. An optional step of treating each newly formed surface of tantalum containing material with a nitrogen-containing agent can be added to create varying amounts of tantalum nitride.

摘要翻译： ALD方法在基底表面的小特征上沉积保形的含钽材料层。 该方法包括以下主要操作：在一些或全部基板表面上沉积薄的共形和饱和的含钽前体层; 使用惰性气体或氢气等离子体清洗卤素副产物和未使用的反应物; 减少前体以将其转变成钽或含钽材料的保形层; 使用惰性气体或氢等离子体的另一吹扫来除去卤素副产物和未使用的反应物; 并重复沉积/还原循环，直到达到所需的含钽材料层。 可以加入用含氮试剂处理含有钽的材料的每个新形成的表面的可选步骤，以产生不同量的氮化钽。

公开(公告)号：US06844258B1

公开(公告)日：2005-01-18

申请号：US10435010

申请日：2003-05-09

申请人： James A. Fair ,  Robert H. Havemann ,  Jungwan Sung ,  Nerissa Taylor ,  Sang-Hyeob Lee ,  Mary Anne Plano

发明人： James A. Fair ,  Robert H. Havemann ,  Jungwan Sung ,  Nerissa Taylor ,  Sang-Hyeob Lee ,  Mary Anne Plano

IPC分类号： H01L21/285 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/76856 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76889

摘要： A method for creating a refractory metal and refractory metal nitride cap effective for reducing copper electromigration and copper diffusion is described. The method includes depositing a refractory metal nucleation layer and nitriding at least the upper portion of the refractory metal layer to form a refractory metal nitride. Methods to reduce and clean the copper lines before refractory metal deposition are also described. Methods to form a thicker refractory metal layer using bulk deposition are also described.

摘要翻译： 描述了一种用于制造有效减少铜电迁移和铜扩散的难熔金属和难熔金属氮化物盖的方法。 该方法包括沉积难熔金属成核层并至少氮化至难熔金属层的上部以形成难熔金属氮化物。 还描述了在难熔金属沉积之前减少和清洁铜线的方法。 还描述了使用体积沉积形成较厚难熔金属层的方法。