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    ALD of tantalum using a hydride reducing agent
    3.
    发明授权
    ALD of tantalum using a hydride reducing agent 有权
    使用氢化物​​还原剂的钽的ALD

    公开(公告)号：US07144806B1

    公开(公告)日：2006-12-05

    申请号：US10279147

    申请日：2002-10-23

    申请人： James A. Fair ,  Jungwan Sung ,  Nerissa Taylor

    发明人： James A. Fair ,  Jungwan Sung ,  Nerissa Taylor

    IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/8242

    CPC分类号： H01L21/76843 ,  C23C16/14 ,  C23C16/38 ,  C23C16/42 ,  C23C16/45542 ,  H01L21/28562

    摘要： An ALD method deposits conformal tantalum-containing material layers on small features of a substrate surface. The method includes the following principal operations: depositing a thin conformal and saturated layer of tantalum-containing precursor over some or all of the substrate surface; using an inert gas or hydrogen plasma to purge the halogen byproducts and unused reactants; reducing the precursor to convert it to a conformal layer of tantalum or tantalum-containing material; using another purge of inert gas or hydrogen plasma to remove the halogen byproducts and unused reactants; and repeating the deposition/reduction cycles until a desired tantalum-containing material layer is achieved. An optional step of treating each newly formed surface of tantalum containing material with a nitrogen-containing agent can be added to create varying amounts of tantalum nitride.

    摘要翻译： ALD方法在基底表面的小特征上沉积保形的含钽材料层。 该方法包括以下主要操作：在一些或全部基板表面上沉积薄的共形和饱和的含钽前体层; 使用惰性气体或氢气等离子体清洗卤素副产物和未使用的反应物; 减少前体以将其转变成钽或含钽材料的保形层; 使用惰性气体或氢等离子体的另一吹扫来除去卤素副产物和未使用的反应物; 并重复沉积/还原循环，直到达到所需的含钽材料层。 可以加入用含氮试剂处理含有钽的材料的每个新形成的表面的可选步骤，以产生不同量的氮化钽。

    Methods of forming tungsten nucleation layer
    4.
    发明授权
    Methods of forming tungsten nucleation layer 有权
    形成钨成核层的方法

    公开(公告)号：US06905543B1

    公开(公告)日：2005-06-14

    申请号：US10174628

    申请日：2002-06-19

    申请人： James A. Fair ,  Nerissa Taylor ,  Junghwan Sung

    发明人： James A. Fair ,  Nerissa Taylor ,  Junghwan Sung

    IPC分类号： C23C16/02 ,  C23C16/14 ,  C23C16/455 ,  C30B25/14

    CPC分类号： C23C16/14 ,  C23C16/0218 ,  C23C16/45525

    摘要： The nucleation delay in the formation of a tungsten layer on a substrate is reduced or eliminated by alternative processes. In one process the substrate is exposed to atomic hydrogen before the tungsten nucleation layer is formed. In the other process the substrate is exposed to a boron hydride such as diborane (B2H6) before the nucleation layer is formed. The process works effectively to reduce or eliminate the tungsten nucleation delay on a variety of surfaces, including silicon, silicon dioxide, silicon nitride and titanium nitride.

    摘要翻译： 通过替代方法减少或消除了在基底上形成钨层的成核延迟。 在一个过程中，在形成钨成核层之前，将衬底暴露于原子氢。 在另一方法中，在形成成核层之前，将基底暴露于硼氢化物如乙硼烷（B 2 H 6 H 6）。 该工艺有效地减少或消除了各种表面上的钨成核延迟，包括硅，二氧化硅，氮化硅和氮化钛。

    Sequential UV induced chemical vapor deposition
    5.
    发明授权
    Sequential UV induced chemical vapor deposition 有权
    顺序UV诱导化学气相沉积

    公开(公告)号：US07897215B1

    公开(公告)日：2011-03-01

    申请号：US10465721

    申请日：2003-06-18

    申请人： James A. Fair ,  Nerissa Taylor

    发明人： James A. Fair ,  Nerissa Taylor

    IPC分类号： B05D3/06

    CPC分类号： C23C16/45525 ,  C23C16/45536 ,  C23C16/482 ,  C23C16/486 ,  C23C16/487

    摘要： Ion-induced, UV-induced, and electron-induced sequential chemical vapor deposition (CVD) processes are disclosed where an ion flux, a flux of ultra-violet radiation, or an electron flux, respectively, is used to induce the chemical reaction in the process. The process for depositing a thin film on a substrate includes introducing a flow of a first reactant gas in vapor phase into a process chamber where the gas forms an adsorbed saturated layer on the substrate and exposing the substrate to a flux of ions, a flux of ultra-violet radiation, or a flux of electrons for inducing a chemical reaction of the adsorbed layer of the first reactant gas to form the thin film. A second reactant gas can be used to form a compound thin film. The ion-induced, UV-induced, and electron-induced sequential CVD process of the present invention can be repeated to form a thin film of the desired thickness.

    摘要翻译： 公开了离子诱导的，UV诱导的和电子诱导的顺序化学气相沉积（CVD）工艺，其中分别使用离子通量，紫外线辐射或电子通量来诱导化学反应 的过程。 将薄膜沉积在衬底上的过程包括将气相中的第一反应气体的流引入到处理室中，其中气体在衬底上形成吸附的饱和层，并将衬底暴露于离子通量， 紫外线辐射或用于引起第一反应气体的吸附层的化学反应形成薄膜的电子束。 可以使用第二反应气体来形成复合薄膜。 可以重复本发明的离子诱导的，UV诱导的和电子诱导的顺序CVD方法以形成所需厚度的薄膜。

    Sequential electron induced chemical vapor deposition
    6.
    发明授权
    Sequential electron induced chemical vapor deposition 有权
    顺序电子诱导化学气相沉积

    公开(公告)号：US06720260B1

    公开(公告)日：2004-04-13

    申请号：US10600622

    申请日：2003-06-20

    申请人： James A. Fair ,  Nerissa Taylor

    发明人： James A. Fair ,  Nerissa Taylor

    IPC分类号： C23C16452

    CPC分类号： C23C16/45525 ,  C23C16/45536 ,  C23C16/482 ,  C23C16/486 ,  C23C16/487

    摘要： Ion-induced, UV-induced, and electron-induced sequential chemical vapor deposition (CVD) processes are disclosed where an ion flux, a flux of ultra-violet radiation, or an electron flux, respectively, is used to induce the chemical reaction in the process. The process for depositing a thin film on a substrate includes introducing a flow of a first reactant gas in vapor phase into a process chamber where the gas forms an adsorbed saturated layer on the substrate and exposing the substrate to a flux of ions, a flux of ultra-violet radiation, or a flux of electrons for inducing a chemical reaction of the adsorbed layer of the first reactant gas to form the thin film. A second reactant gas can be used to form a compound thin film. The ion-induced, UV-induced, and electron-induced sequential CVD process of the present invention can be repeated to form a thin film of the desired thickness.

    摘要翻译： 公开了离子诱导的，UV诱导的和电子诱导的顺序化学气相沉积（CVD）工艺，其中分别使用离子通量，紫外线辐射或电子通量来诱导化学反应 的过程。 将薄膜沉积在衬底上的过程包括将气相中的第一反应气体的流引入到处理室中，其中气体在衬底上形成吸附的饱和层，并将衬底暴露于离子通量， 紫外线辐射或用于引起第一反应气体的吸附层的化学反应形成薄膜的电子束。 可以使用第二反应气体来形成复合薄膜。 可以重复本发明的离子诱导的，UV诱导的和电子诱导的顺序CVD方法以形成所需厚度的薄膜。

    Sequential ion, UV, and electron induced chemical vapor deposition
    7.
    发明授权
    Sequential ion, UV, and electron induced chemical vapor deposition 有权
    顺序离子，紫外线和电子诱导化学气相沉积

    公开(公告)号：US06627268B1

    公开(公告)日：2003-09-30

    申请号：US09849075

    申请日：2001-05-03

    申请人： James A. Fair ,  Wilbert van den Hoek ,  Nerissa Taylor

    发明人： James A. Fair ,  Wilbert van den Hoek ,  Nerissa Taylor

    IPC分类号： C23C16452

    CPC分类号： C23C16/45525 ,  C23C16/45536 ,  C23C16/482 ,  C23C16/486 ,  C23C16/487

    摘要： Ion-induced, UV-induced, and electron-induced sequential chemical vapor deposition (CVD) processes are disclosed where an ion flux, a flux of ultra-violet radiation, or an electron flux, respectively, is used to induce the chemical reaction in the process. The process for depositing a thin film on a substrate includes introducing a flow of a first reactant gas in vapor phase into a process chamber where the gas forms an adsorbed saturated layer on the substrate and exposing the substrate to a flux of ions, a flux of ultra-violet radiation, or a flux of electrons for inducing a chemical reaction of the adsorbed layer of the first reactant gas to form the thin film. A second reactant gas can be used to form a compound thin film. The ion-induced, UV-induced, and electron-induced sequential CVD process of the present invention can be repeated to form a thin film of the desired thickness.

    摘要翻译： 公开了离子诱导的，UV诱导的和电子诱导的顺序化学气相沉积（CVD）工艺，其中分别使用离子通量，紫外线辐射或电子通量来诱导化学反应 的过程。 将薄膜沉积在衬底上的过程包括将气相中的第一反应气体的流引入到处理室中，其中气体在衬底上形成吸附的饱和层，并将衬底暴露于离子通量， 紫外线辐射或用于引起第一反应气体的吸附层的化学反应形成薄膜的电子束。 可以使用第二反应气体来形成复合薄膜。 可以重复本发明的离子诱导的，UV诱导的和电子诱导的顺序CVD方法以形成所需厚度的薄膜。