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    Method for manufacturing a semiconductor device having a capacitor
    5.
    发明授权
    Method for manufacturing a semiconductor device having a capacitor 失效
    制造具有电容器的半导体器件的方法

    公开(公告)号：US06358789B2

    公开(公告)日：2002-03-19

    申请号：US09736416

    申请日：2000-12-15

    申请人： Sang-Hyeob Lee

    发明人： Sang-Hyeob Lee

    IPC分类号： H01L218242

    CPC分类号： H01L21/02323 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02337 ,  H01L21/28568 ,  H01L21/3143 ,  H01L21/31625 ,  H01L21/31683 ,  H01L27/10852 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/90

    摘要： A semiconductor device for use in a memory cell includes an active matrix, a capacitor structure, formed on top of the active matrix, an intermediate dielectric (IMD) layer formed on the capacitor structure and a barrier layer formed on the IMD layer, wherein the barrier layer includes a TiO2 layer and an Al2O3 layer. Since the Al2O3 layer is obtained by oxidizing the Ti1-xAlxN layer, the Al2O3 layer has a structure very dense. Therefore, the barrier layer prevents a capacitor structure from hydrogen damages caused by the formation of another IMD layer or a passivation layer during the following processes.

    摘要翻译： 用于存储单元的半导体器件包括形成在有源矩阵顶部的有源矩阵，电容器结构，形成在电容器结构上的中间介质（IMD）层和形成在IMD层上的势垒层，其中， 阻挡层包括TiO 2层和Al 2 O 3层。 由于通过氧化Ti1-xAlxN层获得Al 2 O 3层，所以Al 2 O 3层具有非常致密的结构。 因此，阻挡层防止电容器结构在后续工艺中由形成另一IMD层或钝化层引起的氢损伤。

    HIGH TEMPERATURE TUNGSTEN METALLIZATION PROCESS
    6.
    发明申请
    HIGH TEMPERATURE TUNGSTEN METALLIZATION PROCESS 失效
    高温钨钢冶金工艺

    公开(公告)号：US20130109172A1

    公开(公告)日：2013-05-02

    申请号：US13660463

    申请日：2012-10-25

    申请人： JOSHUA COLLINS ,  Murali K. Narasimhan ,  Jingjing Liu ,  Sang-Hyeob Lee ,  Kai Wu ,  Avgerinos V. Gelatos

    发明人： JOSHUA COLLINS ,  Murali K. Narasimhan ,  Jingjing Liu ,  Sang-Hyeob Lee ,  Kai Wu ,  Avgerinos V. Gelatos

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76876 ,  H01L21/743 ,  H01L21/76814 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76877 ,  H01L23/53266 ,  H01L27/10885 ,  H01L27/10891 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Embodiments of the invention provide an improved process for depositing tungsten-containing materials. In one embodiment, the method for forming a tungsten-containing material on a substrate includes forming an adhesion layer containing titanium nitride on a dielectric layer disposed on a substrate, forming a tungsten nitride intermediate layer on the adhesion layer, wherein the tungsten nitride intermediate layer contains tungsten nitride and carbon. The method further includes forming a tungsten barrier layer (e.g., tungsten or tungsten-carbon material) from the tungsten nitride intermediate layer by thermal decomposition during a thermal annealing process (e.g., temperature from about 700° C. to less than 1,000° C.). Subsequently, the method includes optionally forming a nucleation layer on the tungsten barrier layer, optionally exposing the tungsten barrier layer and/or the nucleation layer to a reducing agent during soak processes, and forming a tungsten bulk layer on or over the tungsten barrier layer and/or the nucleation layer.

    摘要翻译： 本发明的实施方案提供了一种用于沉积含钨材料的改进方法。 在一个实施例中，在基板上形成含钨材料的方法包括在设置在基板上的电介质层上形成含有氮化钛的粘合层，在粘合层上形成氮化钨中间层，其中氮化钨中间层 含有氮化钨和碳。 该方法还包括在热退火过程中（例如，从约700℃至小于1000℃的温度）通过热分解从氮化钨中间层形成钨阻挡层（例如，钨或钨 - 碳材料） ）。 随后，该方法包括任选地在钨阻挡层上形成成核层，任选地在浸泡过程期间将钨阻挡层和/或成核层暴露于还原剂，以及在钨阻挡层上或之上形成钨体层，以及 /或成核层。

    PROCESS FOR TUNGSTEN NITRIDE DEPOSITION BY A TEMPERATURE CONTROLLED LID ASSEMBLY
    8.
    发明申请
    PROCESS FOR TUNGSTEN NITRIDE DEPOSITION BY A TEMPERATURE CONTROLLED LID ASSEMBLY 审中-公开
    通过温度控制的盖组件对硝酸镍沉积的方法

    公开(公告)号：US20080206987A1

    公开(公告)日：2008-08-28

    申请号：US12021798

    申请日：2008-01-29

    申请人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

    发明人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

    IPC分类号： H01L21/44

    CPC分类号： C23C16/14 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/45512 ,  C23C16/45523

    摘要： Embodiments of the invention provide processes for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a method for forming a tungsten-containing material is provided which includes positioning a substrate within a processing chamber containing a lid plate, heating the lid plate to a temperature within a range from about 120° C. to about 180° C., exposing the substrate to a reducing gas during a pre-nucleation soak process, and depositing a first tungsten nucleation layer on the substrate during a first atomic layer deposition process within the processing chamber. The method further provides depositing a tungsten nitride layer on the first tungsten nucleation layer during a vapor deposition process, depositing a second tungsten nucleation layer on the tungsten nitride layer during a second atomic layer deposition process within the processing chamber, and exposing the substrate to another reducing gas during a post-nucleation soak process.

    摘要翻译： 本发明的实施方案提供了诸如金属钨和氮化钨的含钨材料的气相沉积方法。 在一个实施例中，提供了一种用于形成含钨材料的方法，其包括将衬底定位在包含盖板的处理室内，将盖板加热至约120℃至约180℃的温度 在预成核浸泡工艺期间将衬底暴露于还原气体，以及在处理室内的第一原子层沉积工艺期间在衬底上沉积第一钨成核层。 该方法还提供了在气相沉积工艺期间在第一钨成核层上沉积氮化钨层，在处理室内的第二原子层沉积工艺期间在氮化钨层上沉积第二钨成核层，并将衬底暴露于另一个 在后成核浸泡过程中还原气体。

    TEMPERATURE CONTROLLED LID ASSEMBLY FOR TUNGSTEN NITRIDE DEPOSITION
    9.
    发明申请
    TEMPERATURE CONTROLLED LID ASSEMBLY FOR TUNGSTEN NITRIDE DEPOSITION 有权
    用于硝酸铁沉积的温度控制组件

    公开(公告)号：US20080202425A1

    公开(公告)日：2008-08-28

    申请号：US12021825

    申请日：2008-01-29

    申请人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

    发明人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

    IPC分类号： C23C16/06

    CPC分类号： C23C16/14 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/45512 ,  C23C16/45523

    摘要： Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.

    摘要翻译： 本发明的实施例提供了用于气相沉积含钨材料如金属钨和氮化钨的装置。 在一个实施例中，提供了一种处理室，其包括盖子组件，该盖子组件包含盖板，喷头，混合腔，分配腔和容纳在盖板内的电阻加热元件。 在一个示例中，电阻加热元件被配置成将盖板设置在约120℃至约180℃，优选约140℃至约160℃的温度范围内，更多 优选约145℃至约155℃。混合腔可与含有六氟化钨的钨前体源和含氨的氮前体源流体连通。 在一些实施例中，单个处理室可用于通过CVD工艺沉积金属钨和氮化钨材料。