Bottom gate thin film transistors
    5.
    发明授权
    Bottom gate thin film transistors 失效
    底栅薄膜晶体管

    公开(公告)号:US07514710B2

    公开(公告)日:2009-04-07

    申请号:US11275367

    申请日:2005-12-28

    IPC分类号: H01L29/08 H01L35/24 H01L51/00

    摘要: A transistor is provided comprising: a substrate; a gate electrode; a semiconducting material not located between the substrate and the gate electrode; a source electrode in contact with the semiconducting material; a drain electrode in contact with the semiconducting material; and a dielectric material in contact with the gate electrode and the semiconducting material; wherein the semiconducting material comprises: 1-99.9% by weight of a polymer having a dielectric constant at 1 kHz of greater than 3.3; 0.1-99% by weight of a functionalized pentacene compound as described herein.

    摘要翻译: 提供一种晶体管,包括:衬底; 栅电极; 不位于基板和栅电极之间的半导体材料; 与半导体材料接触的源电极; 与半导体材料接触的漏电极; 以及与所述栅电极和所述半导体材料接触的电介质材料; 其中所述半导体材料包括:1-99.9重量%的介电常数在1kHz下的聚合物大于3.3; 0.1-99重量%的本文所述的官能化并五苯化合物。

    Off-center deposition of organic semiconductor in an organic semiconductor device
    6.
    发明授权
    Off-center deposition of organic semiconductor in an organic semiconductor device 有权
    有机半导体在有机半导体器件中的偏心沉积

    公开(公告)号:US07948016B1

    公开(公告)日:2011-05-24

    申请号:US12611556

    申请日:2009-11-03

    IPC分类号: H01L29/76 H01L23/58

    CPC分类号: H01L51/0005 H01L51/0558

    摘要: The present disclosure provides a method of making a thin film semiconductor device such as a transistor comprising the steps of: a) providing a substrate bearing first and second conductive zones which define a channel therebetween, where the channel does not border more than 75% of the perimeter of either conductive zone; and b) depositing a discrete aliquot of a solution comprising an organic semiconductor adjacent to or on the channel, where a majority of the solution is deposited to one side of the channel and not on the channel. In some embodiments of the present disclosure, the solution is deposited entirely to one side of the channel, not on the channel, and furthermore the solution is deposited in a band having a length that is less than the channel length. The present disclosure additionally provides thin film semiconductor devices such as a transistors.

    摘要翻译: 本公开内容提供了制造诸如晶体管的薄膜半导体器件的方法,包括以下步骤:a)提供承载第一和第二导电区域的衬底,其在其间限定通道,其中通道不超过75% 任一导电区的周长; 以及b)沉积包含邻近于或在通道上的有机半导体的溶液的离散等分试样,其中大部分溶液沉积在通道的一侧,而不是在通道上。 在本公开的一些实施例中,溶液完全沉积在通道的一侧,而不是在通道上,此外,溶液沉积在具有小于通道长度的长度的带中。 本公开另外提供诸如晶体管的薄膜半导体器件。

    Top coats for shoot and run printing plates
    9.
    发明授权
    Top coats for shoot and run printing plates 失效
    用于拍摄和运行印刷版的大衣

    公开(公告)号:US5939237A

    公开(公告)日:1999-08-17

    申请号:US960175

    申请日:1997-10-29

    CPC分类号: G03F7/092 B41C1/1041 G03F7/11

    摘要: A no-process printing plate forming photosensitive article having a protective top coat layer is described. The top coat layer may be a water soluble or dispersible polymer, sol, salt, or mixture thereof. The protective top coat layer may provide the no-process printing plate with protection from contamination during handling, improved suppression of odors during imaging, and improved roll-up performance on press. The hydrophilic protective top coat is removed on press by action of the fountain solution and/or ink.

    摘要翻译: 描述了具有保护性顶涂层的无法印版形成感光制品。 顶涂层可以是水溶性或可分散的聚合物,溶胶,盐或其混合物。 保护性顶涂层可以提供无处理印刷板在处理过程中防止污染,改善成像期间气味的抑制,以及改善印刷机上的卷起性能。 通过润版液和/或油墨的作用,在压榨机上除去亲水性保护面漆。