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公开(公告)号：US20080187651A1
公开(公告)日：2008-08-07
申请号：US11552410
申请日：2006-10-24
CPC分类号： C09D11/52 , H05K1/097 , H05K2201/0329
摘要： Conductive ink formulations comprising a conductive polymer, metallic nanoparticles and a carrier are described. The formulations are printable on a surface, and annealed to form source and drain electrodes.
摘要翻译： 描述了包含导电聚合物，金属纳米颗粒和载体的导电油墨配方。 制剂可在表面上印刷，并进行退火以形成源极和漏极。
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2.发明授权Electronic devices containing acene-thiophene copolymers with silylethynyl groups 有权含有甲硅烷基乙炔基的乙烯 - 噻吩共聚物的电子器件公开(公告)号：US07495251B2
公开(公告)日：2009-02-24
申请号：US11379662
申请日：2006-04-21
IPC分类号： H01L29/08
CPC分类号： H01L51/0043 , B82Y10/00 , C08G61/126 , H01L51/0036 , H01L51/0037 , H01L51/0047 , H01L51/0094 , H01L51/0545 , H01L51/4253 , H01L51/5012 , H01L51/5048 , Y02E10/549 , Y02P70/521
摘要： Electronic devices that include an acene-thiophene copolymer and methods of making such electronic devices are described. More specifically, the acene-thiophene copolymer has attached silylethynyl groups. The copolymer can be used, for example, in a semiconductor layer or in a layer positioned between a first electrode and a second electrode.
摘要翻译： 描述了包含乙烯 - 噻吩共聚物的电子器件和制造这种电子器件的方法。 更具体地说，所述苯乙烯 - 噻吩共聚物具有连接的甲硅烷基乙炔基。 共聚物可以用于例如半导体层或位于第一电极和第二电极之间的层中。
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公开(公告)号：US07608679B2
公开(公告)日：2009-10-27
申请号：US11278222
申请日：2006-03-31
IPC分类号： C08G75/00
CPC分类号： H01L51/0043 , C08G61/126 , C08G2261/124 , C08G2261/1424 , C08G2261/314 , C08G2261/3223 , H01L51/0037
摘要： Acene-thiophene copolymers are provided that can be used as semiconductor materials in electronic devices. The acene-thiophene copolymers are of Formula I. In Formula I, Ac is a radical of an acene having 2 to 5 fused aromatic rings. The acene can be unsubstituted or substituted with a substituent selected from an alkyl, alkoxy, thioalkyl, aryl, aralkyl, halo, haloalkyl, hydroxyalkyl, heteroalkyl, alkenyl, or combinations thereof. Divalent group Q is selected from Formula III where each R1 and R2 group is independently selected from hydrogen, alkyl, alkoxy, thioalkyl, aryl, aralkyl, halo, haloalkyl, hydroxyalkyl, heteroalkyl, alkenyl, or combinations thereof. The subscript n in Formula I is an integer equal to at least 4. The asterisks in Formula I indicate the location of attachment to another group such as another repeat unit of formula —Ac-Q-.
摘要翻译： 提供了可用作电子器件中的半导体材料的乙烯 - 噻吩共聚物。 乙烯 - 噻吩共聚物具有式I化合物。在式I中，Ac是具有2至5个稠合芳环的苊基团。 该烯可以是未取代的或被选自烷基，烷氧基，硫代烷基，芳基，芳烷基，卤代，卤代烷基，羟基烷基，杂烷基，烯基或其组合的取代基取代。 二价基团Q选自式III，其中每个R 1和R 2基团独立地选自氢，烷基，烷氧基，硫代烷基，芳基，芳烷基，卤素，卤代烷基，羟基烷基，杂烷基，烯基或其组合。 式I中的下标n是等于至少4的整数。式I中的星号表示连接到另一组的位置，例如式-Ac-Q-的另一个重复单元。
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公开(公告)号：US07667230B2
公开(公告)日：2010-02-23
申请号：US11278229
申请日：2006-03-31
IPC分类号： H01L35/24
CPC分类号： C09K11/06 , C08G61/126 , C08G2261/314 , C08G2261/3223 , C08G2261/512 , C08G2261/91 , C08G2261/92 , C09K2211/1011 , C09K2211/1092 , H01L51/0036 , H01L51/0043 , H01L51/0508 , H05B33/14 , Y02E10/549
摘要： Electronic devices that include an acene-thiophene copolymer and methods of making such electronic devices are described. The acene-thiophene copolymer can be used, for example, in a semiconductor layer or in a layer positioned between a first electrode and a second electrode.
摘要翻译： 描述了包含乙烯 - 噻吩共聚物的电子器件和制造这种电子器件的方法。 该乙烯 - 噻吩共聚物可用于例如半导体层或位于第一电极和第二电极之间的层中。
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公开(公告)号：US07666968B2
公开(公告)日：2010-02-23
申请号：US11379642
申请日：2006-04-21
IPC分类号： C08G75/00
CPC分类号： C08G61/126 , C08G61/122 , C08G2261/1424 , C08G2261/144 , C08G2261/15 , C08G2261/314 , C08G2261/3223 , C08G2261/3243 , C08G2261/411
摘要： Acene-thiophene copolymers with attached silylethynyl groups are provided that can be used in electronic devices. The copolymers are often soluble in common organic solvents and can be part of a coating composition.
摘要翻译： 提供具有连接的甲硅烷基乙炔基的乙烯 - 噻吩共聚物，其可用于电子设备中。 共聚物通常可溶于常用有机溶剂，并且可以是涂料组合物的一部分。
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公开(公告)号：US07151276B2
公开(公告)日：2006-12-19
申请号：US11075978
申请日：2005-03-09
IPC分类号： H01L35/24
CPC分类号： H01L51/0068 , B82Y30/00 , H01L51/0036 , H01L51/0529 , H01L51/0545
摘要： Semiconductor devices are described that include a semiconductor layer that comprises a perfluoroether acyl oligothiophene compound, preferably an α,ω-bis-perfluoroether acyl oligothiophene compound. Additionally, methods of making semiconductor devices are described that include depositing a semiconductor layer that contains a perfluoroether acyl oligothiophene compound, preferably an α,ω-bis(2-perfluoroether acyl oligothiophene compound.
摘要翻译： 描述了半导体器件，其包括包含全氟醚酰基低聚噻吩化合物，优选α，ω-双 - 全氟醚酰基低聚噻吩化合物的半导体层。 此外，描述了制造半导体器件的方法，其包括沉积包含全氟醚酰基低聚噻吩化合物，优选α，ω-双（2-全氟醚酰基低聚噻吩化合物）的半导体层。
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公开(公告)号：US07211679B2
公开(公告)日：2007-05-01
申请号：US11076268
申请日：2005-03-09
IPC分类号： H01B1/12 , C07D333/04 , C07D333/28
CPC分类号： C07D333/28 , B82Y30/00 , C08G61/126 , H01L51/0036
摘要： Semiconductor devices are described that include a semiconductor layer that comprises a perfluoroether acyl oligothiophene compound, preferably an α,ω-bis-perfluoroether acyl oligothiophene compound. Additionally, methods of making semiconductor devices are described that include depositing a semiconductor layer that contains a perfluoroether acyl oligothiophene compound, preferably an α,ω-bis(2-perfluoroether acyl oligothiophene compound.
摘要翻译： 描述了半导体器件，其包括包含全氟醚酰基低聚噻吩化合物，优选α，ω-双 - 全氟醚酰基低聚噻吩化合物的半导体层。 此外，描述了制造半导体器件的方法，其包括沉积含有全氟醚酰基低聚噻吩化合物，优选α，ω-双（2-全氟醚酰基低聚噻吩化合物）的半导体层。
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公开(公告)号：US20100140600A1
公开(公告)日：2010-06-10
申请号：US12596164
申请日：2008-05-13
申请人： Robert S. Clough , Tzu-Chen Lee , Dennis E. Vogel , Peiwang Zhu
发明人： Robert S. Clough , Tzu-Chen Lee , Dennis E. Vogel , Peiwang Zhu
CPC分类号： H01L51/0537 , B82Y10/00 , H01L51/0035 , H01L51/0036 , H01L51/0043 , H01L51/0048 , H01L51/0052 , H01L51/0525
摘要： A field effect transistor includes a thin layer of discontinuous conductive clusters between the gate dielectric and the active layer. The active layer can include an organic semiconductor or a blend of organic semiconductor and polymer. Metals, metal oxides, predominantly non-carbon metallic materials, and/or carbon nanotubes may be used to form the layer of conductive clusters. The conductive clusters improve transistor performance and also facilitate transistor fabrication.
摘要翻译： 场效应晶体管包括在栅极电介质和有源层之间的不连续导电簇的薄层。 有源层可以包括有机半导体或有机半导体和聚合物的共混物。 可以使用金属，金属氧化物，主要是非碳金属材料和/或碳纳米管来形成导电簇的层。 导电簇提高了晶体管的性能，并且还有助于晶体管的制造。
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9.发明申请METHODS FOR MAKING ELECTRONIC DEVICES WITH A SOLUTION DEPOSITED GATE DIELECTRIC 有权用于制造具有溶液沉积栅电介质的电子器件的方法公开(公告)号：US20090004771A1
公开(公告)日：2009-01-01
申请号：US11771787
申请日：2007-06-29
IPC分类号： H01L21/336 , B05D3/06 , H01L51/40 , B05D5/12
CPC分类号： H01L51/0537 , H01L27/1292 , H01L29/78681 , H01L51/0005 , H01L51/0541 , H01L51/0545
摘要： A method of making an electronic device comprises solution depositing a dielectric composition onto a substrate and polymerizing the dielectric composition to form a gate dielectric. The dielectric composition comprises a polymerizable resin and zirconium oxide nanoparticles.
摘要翻译： 制造电子器件的方法包括将电介质组合物沉积在衬底上并聚合电介质组合物以形成栅极电介质。 电介质组合物包含可聚合树脂和氧化锆纳米颗粒。
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公开(公告)号：US07514710B2
公开(公告)日：2009-04-07
申请号：US11275367
申请日：2005-12-28
申请人： Dennis E. Vogel , Brian K. Nelson
发明人： Dennis E. Vogel , Brian K. Nelson
CPC分类号： H01L51/0055 , H01L51/0094 , H01L51/052 , H01L51/0545 , H01L51/0566
摘要： A transistor is provided comprising: a substrate; a gate electrode; a semiconducting material not located between the substrate and the gate electrode; a source electrode in contact with the semiconducting material; a drain electrode in contact with the semiconducting material; and a dielectric material in contact with the gate electrode and the semiconducting material; wherein the semiconducting material comprises: 1-99.9% by weight of a polymer having a dielectric constant at 1 kHz of greater than 3.3; 0.1-99% by weight of a functionalized pentacene compound as described herein.
摘要翻译： 提供一种晶体管，包括：衬底; 栅电极; 不位于基板和栅电极之间的半导体材料; 与半导体材料接触的源电极; 与半导体材料接触的漏电极; 以及与所述栅电极和所述半导体材料接触的电介质材料; 其中所述半导体材料包括：1-99.9重量％的介电常数在1kHz下的聚合物大于3.3; 0.1-99重量％的本文所述的官能化并五苯化合物。
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