公开(公告)号：US20070188935A1

公开(公告)日：2007-08-16

申请号：US11353341

申请日：2006-02-13

申请人： James Freitag ,  Mohamad Krounbi ,  Mustafa Pinarbasi

发明人： James Freitag ,  Mohamad Krounbi ,  Mustafa Pinarbasi

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/1278 ,  G11B5/3932 ,  G11B2005/0002 ,  H01F10/30 ,  H01F10/3254 ,  H01F41/302

摘要： A seedlayer structure for a high coercivity hard bias layer is disclosed, having at least one bi-layer seedlayer, including a CrMo layer, and a W layer fabricated on the CrMo layer. A hard bias layer is fabricated on the bi-layer seedlayer. Preferably, the seedlayer structure includes two bi-layer seedlayers, which including a first CrMo layer, a first W layer fabricated on the first CrMo layer, a second CrMo layer fabricated on the first W layer, and a second W layer fabricated on the second CrMo layer. Also disclosed is a high coercivity hard bias stack structure, a magnetic read head for a disk drive having a high coercivity hard bias stack structure and a method for fabricating a coercivity hard bias layer for a magnetic read head.

摘要翻译： 公开了一种用于高矫顽力硬偏置层的种子层结构，其具有至少一个双层种子层，包括CrMo层和在CrMo层上制造的W层。 在双层子层上制造硬偏置层。 优选地，种子层结构包括两个双层种子层，其包括第一CrMo层，在第一CrMo层上制造的第一W层，在第一W层上制造的第二CrMo层和在第二层上制造的第二W层 CrMo层。 还公开了高矫顽力硬偏置堆叠结构，用于具有高矫顽力硬偏置堆叠结构的磁盘驱动器的磁读头和用于制造磁读头的矫顽力硬偏置层的方法。

公开(公告)号：US08318530B2

公开(公告)日：2012-11-27

申请号：US12843778

申请日：2010-07-26

申请人： Bulent M. Basol ,  Mustafa Pinarbasi ,  James Freitag

发明人： Bulent M. Basol ,  Mustafa Pinarbasi ,  James Freitag

IPC分类号： H01L21/00

CPC分类号： H01L31/206 ,  C23C18/12 ,  C23C18/1204 ,  C23C18/125 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/0322 ,  H01L31/0749 ,  H01L31/1884 ,  Y02E10/541 ,  Y02P70/521

摘要： Described is a continuous electroless deposition method and a system to form a solar cell buffer layer with a varying composition through its thickness are provided. The composition of the buffer layer is varied by varying the composition of a chemical bath deposition solution applied onto an absorber surface on which the buffer layer with varying composition is formed. In one example, the buffer layer with varying composition includes a first section containing CdS, a second section containing CdZnS formed on top of the already deposited CdS, and a third section containing ZnS is formed on the second section All the process steps are applied in a roll-to-roll fashion. In another example, a transparent conductive layer including a first transparent conductive film such as aluminum doped zinc oxide and a second transparent conductive film such as indium tin oxide is deposited over the buffer layer with the varying composition.

摘要翻译： 描述了一种连续的无电沉积方法，并且提供了通过其厚度形成具有不同组成的太阳能电池缓冲层的系统。 通过改变施加到其上形成有不同组成的缓冲层的吸收体表面上的化学浴沉积溶液的组成来改变缓冲层的组成。 在一个实例中，具有不同成分的缓冲层包括含有CdS的第一部分，在已经沉积的CdS的顶部上形成的包含CdZnS的第二部分，在第二部分上形成包含ZnS的第三部分。所有的工艺步骤都应用于 一对一的滚动时尚。 在另一个实例中，包括第一透明导电膜如铝掺杂氧化锌和第二透明导电膜如氧化铟锡的透明导电层沉积在具有不同组成的缓冲层上。

公开(公告)号：US20110108099A1

公开(公告)日：2011-05-12

申请号：US12616578

申请日：2009-11-11

申请人： Mustafa Pinarbasi ,  James Freitag

发明人： Mustafa Pinarbasi ,  James Freitag

IPC分类号： H01L31/00 ,  H01L21/283

CPC分类号： H01L31/022466 ,  H01L31/022483 ,  H01L31/0749 ,  H01L31/1884 ,  Y02E10/541 ,  Y02P70/521

摘要： A solar cell including a high electrical resistivity transparent layer formed on a CdS buffer layer is provided. The high electrical resistivity transparent layer includes an intrinsic oxide film formed on the buffer layer and an intermediate oxide film formed on the intrinsic oxide film. The intrinsic oxide film includes undoped zinc oxide and has a thickness range of 10 to 40 nm. The intermediate oxide film includes semi-intrinsic zinc oxide doped with aluminum and has a thickness range of 50-150 nm. The intermediate oxide film has an aluminum concentration of less than 1000 ppm.

摘要翻译： 提供了包括形成在CdS缓冲层上的高电阻率透明层的太阳能电池。 高电阻率透明层包括形成在缓冲层上的本征氧化膜和形成在本征氧化膜上的中间氧化膜。 本发明的氧化物膜包括未掺杂的氧化锌，其厚度范围为10〜40nm。 中间氧化膜包括掺杂有铝的半固有氧化锌，其厚度范围为50-150nm。 中间氧化膜的铝浓度小于1000ppm。

公开(公告)号：US20110039366A1

公开(公告)日：2011-02-17

申请号：US12843778

申请日：2010-07-26

申请人： Bulent M. Basol ,  Mustafa Pinarbasi ,  James Freitag

发明人： Bulent M. Basol ,  Mustafa Pinarbasi ,  James Freitag

IPC分类号： H01L31/18 ,  H01L31/0264

CPC分类号： H01L31/206 ,  C23C18/12 ,  C23C18/1204 ,  C23C18/125 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/0322 ,  H01L31/0749 ,  H01L31/1884 ,  Y02E10/541 ,  Y02P70/521

摘要： In one embodiment, a continuous electroless deposition method and a system to form a solar cell buffer layer with a varying composition through its thickness are provided. The composition of the buffer layer is varied by varying the composition of a chemical bath deposition solution applied onto an absorber surface on which the buffer layer with varying composition is formed. In one example, the buffer layer with varying composition includes a first section containing CdS, a second section containing CdZnS formed on top of the already deposited CdS, and a third section containing ZnS is formed on the second section All the process steps are applied in a roll-to-roll fashion. In another embodiment, a transparent conductive layer including a first transparent conductive film such as aluminum doped zinc oxide and a second transparent conductive film such as indium tin oxide is deposited over the buffer layer with the varying composition.

摘要翻译： 在一个实施例中，提供连续的无电沉积方法和通过其厚度形成具有变化的组成的太阳能电池缓冲层的系统。 通过改变施加到其上形成有不同组成的缓冲层的吸收体表面上的化学浴沉积溶液的组成来改变缓冲层的组成。 在一个实例中，具有不同成分的缓冲层包括含有CdS的第一部分，在已经沉积的CdS的顶部上形成的包含CdZnS的第二部分，在第二部分上形成包含ZnS的第三部分。所有的工艺步骤都应用于 一对一的滚动时尚。 在另一个实施例中，包含第一透明导电膜（例如掺杂铝的氧化锌）和第二透明导电膜（例如氧化铟锡）的透明导电层以不同的组成沉积在缓冲层上。

公开(公告)号：US20070127167A1

公开(公告)日：2007-06-07

申请号：US11297151

申请日：2005-12-07

申请人： James Freitag ,  Kuok Ho ,  Mustafa Pinarbasi ,  Ching Tsang

发明人： James Freitag ,  Kuok Ho ,  Mustafa Pinarbasi ,  Ching Tsang

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/398

摘要： A magnetoresistive sensor having a lead overlay defined trackwidth and a pinned layer that extends beyond the stripe height defined by the free layer of the sensor. The extended pinned layer has a strong shape induced anisotropy that maintains pinning of the pinned layer moment. The extended portion of the pinned layer has sides beyond the stripe height that are perfectly aligned with the sides of the sensor within the stripe height. This perfect alignment is made possible by a manufacturing method that uses a mask structure for more than one manufacturing phase, eliminating the need for multiple mask alignments. The lead overlay design allows narrow, accurate trackwidth definition.

摘要翻译： 磁阻传感器具有引线覆盖层限定的轨道宽度和延伸超过由传感器的自由层限定的条带高度的钉扎层。 延伸的钉扎层具有强烈的形状诱导的各向异性，保持钉扎层力矩的钉扎。 被钉扎层的延伸部分具有超过条带高度的侧面，其在条纹高度内完全与传感器的侧面对准。 通过使用掩模结构用于多于一个制造阶段的制造方法，可以实现这种完美的对准，从而消除了对多个掩模对准的需要。 引线覆盖设计允许窄的，准确的轨道宽度定义。

公开(公告)号：US20050264955A1

公开(公告)日：2005-12-01

申请号：US10856710

申请日：2004-05-28

申请人： James Freitag ,  James Nix ,  Mustafa Pinarbasi

发明人： James Freitag ,  James Nix ,  Mustafa Pinarbasi

IPC分类号： G11B5/127 ,  G11B5/31 ,  G11B5/33

CPC分类号： G11B5/3932 ,  B82Y25/00 ,  G01R33/093

摘要： A magnetic head having an improved read head structure. The read head includes a free magnetic layer with hard bias elements disposed proximate its ends, where the hard bias elements include an improved hard bias magnetic grain structure. This is accomplished by fabricating the hard bias element as a bilayer structure having a first hard bias sublayer, a nonmagnetic midlayer and a second hard bias sublayer. The midlayer is preferably composed of a nonmagnetic material such as chromium, and the hard bias sublayers are composed of a magnetic material such as CoPtCr. Each sublayer is formed with its own magnetic grains, and because there are two sublayers, the hard bias element is fabricated with approximately twice the number of magnetic grains as the prior art single layer hard bias element.

摘要翻译： 具有改进的读头结构的磁头。 读头包括具有靠近其端部设置的硬偏置元件的自由磁性层，其中硬偏置元件包括改进的硬偏磁晶粒结构。 这是通过将硬偏压元件制造成具有第一硬偏压子层，非磁性中间层和第二硬偏压子层的双层结构来实现的。 中间层优选由诸如铬的非磁性材料构成，并且硬偏置子层由诸如CoPtCr的磁性材料构成。 每个子层由其自身的磁性颗粒形成，并且由于存在两个子层，所以用现有技术的单层硬偏置元件的大约两倍的磁性颗粒制造硬偏置元件。

公开(公告)号：US20050068696A1

公开(公告)日：2005-03-31

申请号：US10674831

申请日：2003-09-30

申请人： Phong Chau ,  James Freitag ,  Mustafa Pinarbasi ,  Hua Zeng ,  Howard Zolla

发明人： Phong Chau ,  James Freitag ,  Mustafa Pinarbasi ,  Hua Zeng ,  Howard Zolla

IPC分类号： G11B5/127 ,  G11B5/33 ,  G11B5/39

CPC分类号： G11B5/3932

摘要： An apparatus having improved hard bias properties of layers of a magnetoresistance sensor is disclosed. Properties of the hard bias layer are improved using a seedlayer structure that includes at least a layer of silicon and a layer comprising chromium or chromium molybdenum. Further, benefits are achieved when the seedlayer structure includes a layer of tantalum.

摘要翻译： 公开了一种具有改进的磁阻传感器层的硬偏置特性的装置。 使用包括至少一层硅层和包含铬或铬钼的层的种子层结构来改善硬偏置层的性质。 此外，当种子层结构包括一层钽时，实现了益处。

公开(公告)号：US20130061803A1

公开(公告)日：2013-03-14

申请号：US13572568

申请日：2012-08-10

申请人： Jorge Vasquez ,  James Freitag ,  Mustafa Pinarbasi

发明人： Jorge Vasquez ,  James Freitag ,  Mustafa Pinarbasi

IPC分类号： C23C16/54

CPC分类号： C23C16/545 ,  C23C14/562 ,  C23C14/564 ,  H01L21/02568 ,  H01L21/02573 ,  H01L21/02614 ,  H01L21/02631 ,  H01L21/67721 ,  H01L21/6776 ,  H01L31/0322 ,  H01L31/206 ,  Y02E10/541 ,  Y02P70/521

摘要： The present inventions provide method and apparatus that employ constituents from one or more constituent supply source or sources to form one or more films of a precursor layer formed on a surface of a continuous flexible workpiece. Of particular significance is the implementation of PVD systems that operate upon a horizontally disposed portion of a continuous flexible workpiece and a vertically disposed portion of a continuous flexible workpiece, preferably in conjunction with a short free-span zone of the portion of a continuous flexible workpiece.

摘要翻译： 本发明提供了使用来自一个或多个构成供应源或源的组分的方法和装置，以形成在连续柔性工件的表面上形成的前体层的一个或多个膜。 特别重要的是实施PVD系统，其操作在连续柔性工件的水平放置部分和连续柔性工件的垂直设置部分上，优选地与连续柔性工件的部分的短自由跨距区域结合 。

公开(公告)号：US20120247388A1

公开(公告)日：2012-10-04

申请号：US13342648

申请日：2012-01-03

申请人： Jorge Vasquez ,  James Freitag ,  Mustafa Pinarbasi

发明人： Jorge Vasquez ,  James Freitag ,  Mustafa Pinarbasi

IPC分类号： C23C16/54

CPC分类号： H01L21/6776 ,  C23C14/562 ,  C23C14/564 ,  H01L21/02568 ,  H01L21/02614 ,  H01L21/02631 ,  H01L31/0322 ,  H01L31/206 ,  Y02E10/541 ,  Y02P70/521

摘要： The present inventions provide method and apparatus that employ constituents vaporized from one or more constituent supply source or sources to form one or more films of a precursor layer formed on a surface of a continuous flexible workpiece. Of particular significance is the implementation of vapor deposition systems that operate upon a horizontally disposed portion of a continuous flexible workpiece and a vertically disposed portion of a continuous flexible workpiece, preferably in conjunction with a short free-span zone of the portion of a continuous flexible workpiece.

摘要翻译： 本发明提供了使用从一个或多个构成供应源或源蒸发的组分形成在连续柔性工件的表面上形成的前体层的一个或多个膜的方法和装置。 特别重要的是实施气相沉积系统，其操作在连续柔性工件的水平放置部分和连续柔性工件的垂直设置部分上，优选结合连续柔性工件部分的短自由跨距区域 工件。

公开(公告)号：US20120234314A1

公开(公告)日：2012-09-20

申请号：US13100201

申请日：2011-05-03

申请人： Howard Zolla ,  Jorge Vasquez ,  James Freitag ,  Mustafa Pinarbasi ,  Robert J. Bailey

发明人： Howard Zolla ,  Jorge Vasquez ,  James Freitag ,  Mustafa Pinarbasi ,  Robert J. Bailey

IPC分类号： F24C3/00

CPC分类号： H01L31/0322 ,  H01L31/0749 ,  H01L31/206 ,  Y02E10/541 ,  Y02P70/521

摘要： The present invention provides a reactor for preparing thin films of compound semiconductors for photovoltaic devices. The reactor includes a chamber that has a bottom surface that, in some locations, has protrusions that contact the bottom surface of the substrate having the compound semiconductor to provide uniform heating and cooling of the substrate. Interior walls of the chamber can also be lined with high thermal conductivity portions and low thermal conductivity portions interposed between high thermal conductivity portions.

摘要翻译： 本发明提供一种用于制备用于光伏器件的化合物半导体的薄膜的反应器。 反应器包括具有底表面的室，其在一些位置具有与具有化合物半导体的衬底的底表面接触的突起，以提供衬底的均匀加热和冷却。 腔室的内壁还可以衬有高导热部分和介于高导热部分之间的低导热部分。