公开(公告)号：US5369040A

公开(公告)日：1994-11-29

申请号：US58629

申请日：1993-04-12

申请人： James Halvis ,  Nathan Bluzer ,  Robert R. Shiskowski ,  Li-Shu Chen

发明人： James Halvis ,  Nathan Bluzer ,  Robert R. Shiskowski ,  Li-Shu Chen

IPC分类号： H01L21/8234 ,  H01L31/18

CPC分类号： H01L21/823406

摘要： An improved MOS photodetector having polysilicon gate material which is made more transparent to visible light by the addition of up to 50% carbon, and preferably about 10% carbon. The surfaces of the polysilicon-carbon gates are oxidized to form a silicon dioxide dielectric layer, thus eliminating the need to deposit a separate dielectric layer for isolation of adjacent gates in an overlapping gate array. The elimination of a separate dielectric layer permits all gates to be formed directly on the substrate dielectric layer, thus providing a uniform drive voltage requirement across the array.

摘要翻译： 一种具有多晶硅栅极材料的改进的MOS光电探测器，其通过加入高达50％的碳，优选约10％的碳使得对可见光更透明。 多晶硅 - 碳栅极的表面被氧化形成二氧化硅电介质层，从而消除了在重叠栅极阵列中隔离相邻栅极的单独介电层的需要。 消除单独的电介质层允许所有栅极直接形成在衬底介质层上，从而在整个阵列上提供均匀的驱动电压要求。

公开(公告)号：US08345134B2

公开(公告)日：2013-01-01

申请号：US12759472

申请日：2010-04-13

申请人： Joseph T. Smith ,  Bron R. Frias ,  Paul A. Tittel ,  Robert R. Shiskowski ,  Nathan Bluzer

发明人： Joseph T. Smith ,  Bron R. Frias ,  Paul A. Tittel ,  Robert R. Shiskowski ,  Nathan Bluzer

IPC分类号： H04N5/335 ,  H01L27/148 ,  H01L21/00

CPC分类号： H01L29/76891 ,  H01L21/3003

摘要： An Indium Tin Oxide (ITO) gate charge coupled device (CCD) is provided. The CCD device comprises a CCD structure having a substrate layer, an oxide layer over the substrate layer, a nitride layer over the oxide layer and a plurality of parallel ITO gates extending over the nitride layer. The CCD device further comprises a plurality of substantially similarly sized channel stop regions in the substrate layer that extend transversely relative to the ITO gates, such that a given pair of channel stop regions defining a pixel column of the CCD structure. The CCD device also comprises a plurality of vent openings that extend through the nitride layer along the plurality of substantially similarly sized channel stop regions to allow for penetration of hydrogen to at least one of the oxide layer and the substrate layer.

摘要翻译： 提供氧化铟锡（ITO）栅极电荷耦合器件（CCD）。 CCD器件包括具有衬底层，衬底层上的氧化物层，氧化物层上的氮化物层和在氮化物层上延伸的多个平行ITO栅极的CCD结构。 CCD器件还包括在衬底层中相对于ITO栅极横向延伸的多个基本相似尺寸的通道阻挡区域，使得限定CCD结构的像素列的给定的一对通道阻挡区域。 CCD装置还包括多个通气孔，其沿着多个基本类似尺寸的通道停止区域延伸穿过氮化物层，以允许氢气渗透到氧化物层和衬底层中的至少一个。

公开(公告)号：US20110249160A1

公开(公告)日：2011-10-13

申请号：US12759472

申请日：2010-04-13

申请人： Joseph T. Smith ,  Bron R. Frias ,  Paul A. Tittel ,  Robert R. Shiskowski ,  Nathan Bluzer

发明人： Joseph T. Smith ,  Bron R. Frias ,  Paul A. Tittel ,  Robert R. Shiskowski ,  Nathan Bluzer

IPC分类号： H04N5/335 ,  H01L21/28 ,  H01L29/768

CPC分类号： H01L29/76891 ,  H01L21/3003

摘要： An Indium Tin Oxide (ITO) gate charge coupled device (CCD) is provided. The CCD device comprises a CCD structure having a substrate layer, an oxide layer over the substrate layer, a nitride layer over the oxide layer and a plurality of parallel ITO gates extending over the nitride layer. The CCD device further comprises a plurality of substantially similarly sized channel stop regions in the substrate layer that extend transversely relative to the ITO gates, such that a given pair of channel stop regions defining a pixel column of the CCD structure. The CCD device also comprises a plurality of vent openings that extend through the nitride layer along the plurality of substantially similarly sized channel stop regions to allow for penetration of hydrogen to at least one of the oxide layer and the substrate layer.

摘要翻译： 提供氧化铟锡（ITO）栅极电荷耦合器件（CCD）。 CCD器件包括具有衬底层，衬底层上的氧化物层，氧化物层上的氮化物层和在氮化物层上延伸的多个平行ITO栅极的CCD结构。 CCD器件还包括在衬底层中相对于ITO栅极横向延伸的多个基本相似尺寸的通道阻挡区域，使得限定CCD结构的像素列的给定的一对通道阻挡区域。 CCD装置还包括多个通气孔，其沿着多个基本类似尺寸的通道停止区域延伸穿过氮化物层，以允许氢气渗透到氧化物层和衬底层中的至少一个。

公开(公告)号：US07361900B2

公开(公告)日：2008-04-22

申请号：US11302229

申请日：2005-12-14

申请人： Nathan Bluzer ,  James Halvis ,  Robert Shiskowski

发明人： Nathan Bluzer ,  James Halvis ,  Robert Shiskowski

IPC分类号： G01J5/00

CPC分类号： G01J5/20

摘要： A bolometer type focal plane is made up of a plurality of silicon sensors. Within each sensor, interconnection between co-planar stages is provided by elongated “I” beam type bridge members having a generally rectangular cross-section including unequal wider (height) and narrower (width) dimensions, and wherein the bridge members are oriented such that the narrower width dimension is in the direction of the common plane and the wider height dimension is perpendicular to the common plane. A sensor with these bridges accommodates stress/strain by rotation while preventing out-of-plane deflection and deformation.

摘要翻译： 测辐射热计型焦平面由多个硅传感器组成。 在每个传感器内，共平面级之间的互连通过具有大致矩形横截面的细长的“I”梁型桥梁构件提供，其包括不相等的较宽（高度）和较窄（宽度）的尺寸，并且其中桥构件定向成使得 较窄的宽度尺寸在公共平面的方向上，较宽的高度尺寸垂直于公共平面。 具有这些桥的传感器通过旋转来适应应力/应变，同时防止面外偏转和变形。

公开(公告)号：US4812801A

公开(公告)日：1989-03-14

申请号：US49363

申请日：1987-05-14

申请人： James Halvis ,  Nathan Bluzer ,  Robert Shiskowski

发明人： James Halvis ,  Nathan Bluzer ,  Robert Shiskowski

IPC分类号： G01L21/12 ,  G01L1/22

CPC分类号： G01L21/12

摘要： A solid state gas pressure sensor has a resistor of polysilicon deposited upon a dielectric substrate which electrically isolates and thermally prevents heat transfer to other devices thereon. A constant voltage is applied to the resistor. Depending upon the gas pressure over the sensor, a given current will be output once temperature equilibrium is established. A change in the gas pressure changes the output current of the resistor. The output current indicative of pressure is temperature corrected.

摘要翻译： 固态气体压力传感器具有沉积在电介质基板上的多晶硅电阻器，其电隔离并且热阻止热传递到其上的其它器件。 电阻施加恒定电压。 取决于传感器上的气体压力，一旦建立了温度平衡，就会输出给定的电流。 气体压力的变化会改变电阻器的输出电流。 指示压力的输出电流是温度校正的。

公开(公告)号：US20070131861A1

公开(公告)日：2007-06-14

申请号：US11302229

申请日：2005-12-14

申请人： Nathan Bluzer ,  James Halvis ,  Robert Shiskowski

发明人： Nathan Bluzer ,  James Halvis ,  Robert Shiskowski

IPC分类号： G01J5/00

CPC分类号： G01J5/20

摘要： A bolometer type focal plane is made up of a plurality of silicon sensors. Within each sensor, interconnection between co-planar stages is provided by elongated “I” beam type bridge members having a generally rectangular cross-section including unequal wider (height) and narrower (width) dimensions, and wherein the bridge members are oriented such that the narrower width dimension is in the direction of the common plane and the wider height dimension is perpendicular to the common plane. A sensor with these bridges accommodates stress/strain by rotation while preventing out-of-plane deflection and deformation.

摘要翻译： 测辐射热计型焦平面由多个硅传感器组成。 在每个传感器内，共平面级之间的互连通过具有大致矩形横截面的细长的“I”梁型桥梁构件提供，其包括不相等的较宽（高度）和较窄（宽度）的尺寸，并且其中桥构件定向成使得 较窄的宽度尺寸在公共平面的方向上，较宽的高度尺寸垂直于公共平面。 具有这些桥的传感器通过旋转来适应应力/应变，同时防止面外偏转和变形。

公开(公告)号：US08780420B1

公开(公告)日：2014-07-15

申请号：US13838245

申请日：2013-03-15

申请人： Nathan Bluzer ,  James Halvis

发明人： Nathan Bluzer ,  James Halvis

IPC分类号： H04N1/04 ,  G06K9/46 ,  G06K9/40

CPC分类号： H04N1/04

摘要： A focal plane staring sensor is provided that includes an M×N sensor, where M is a number of rows of sensor pixels in the sensor and N is a number of columns of sensor pixels in the sensor, where M and N are integers greater than one. A control circuit samples a sensor pixel value for each sensor pixel of the M×N sensor at a plurality of different integration times corresponding to an amount of time that a photonic charge can be acquired in each sensor pixel of the M×N sensor, wherein the control circuit selects one sample from a set of samples to generate a scaled value to facilitate an equalization of a signal to noise ratio between the sensor pixels.

摘要翻译： 提供了一种焦平面凝视传感器，其包括M×N传感器，其中M是传感器中的传感器像素的行数，N是传感器中的传感器像素列数，其中M和N是大于 一。 控制电路以对应于在M×N传感器的每个传感器像素中可获取光子电荷的时间量的多个不同积分时间，对M×N传感器的每个传感器像素的传感器像素值进行采样，其中 控制电路从一组样本中选择一个采样以产生一个缩放的值，以促进传感器像素之间的信噪比的均衡。

公开(公告)号：US5606187A

公开(公告)日：1997-02-25

申请号：US491666

申请日：1995-06-19

申请人： Nathan Bluzer ,  James Halvis

发明人： Nathan Bluzer ,  James Halvis

IPC分类号： H01L27/148

CPC分类号： H01L27/148

摘要： A CCD structure including high resolution pixels. The gate electrodes of the CCD are separated by gaps in the order of 0.6 .mu.m which are made to look smaller than their physical size by the use of dielectric filler material in the gaps. The dielectric filler material has a relatively high dielectric constant which is relatively large for the clock frequencies utilized but may be relatively low for optical frequencies. The dielectric constant of the dielectric filler material is typically greater than 20 and is selected from materials such as tantalum oxide, zirconium oxide, barium titanate and barium strontium titanate.

摘要翻译： 包括高分辨率像素的CCD结构。 通过在间隙中使用介质填充材料，将CCD的栅电极分开，间隙为0.6μm，通过使用介电填料材料制成的看起来比其物理尺寸小。 介电填料材料具有相对较高的介电常数，对于所使用的时钟频率而言相对较大，但对于光频率可能相对较低。 介电填充材料的介电常数通常大于20，并且选自氧化钽，氧化锆，钛酸钡和钛酸锶钡等材料。

公开(公告)号：US4652339A

公开(公告)日：1987-03-24

申请号：US831908

申请日：1986-02-24

申请人： Nathan Bluzer ,  James Halvis

发明人： Nathan Bluzer ,  James Halvis

IPC分类号： H01L21/339 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L29/66954 ,  Y10S438/978

摘要： A CCD gate definition process utilizing a thin film layer in a double masking process to form a first and second oxide layer over the polysilicon gate material to provide a profiled and tapered oxide layer over the gate without any re-entrant oxide steps.

摘要翻译： 在双掩模工艺中利用薄膜层的CCD栅极定义方法，以在多晶硅栅极材料上形成第一和第二氧化物层，以在栅极上提供异形和锥形的氧化物层，而不需要任何再循环的氧化物步骤。

公开(公告)号：US09029750B1

公开(公告)日：2015-05-12

申请号：US13196603

申请日：2011-08-02

申请人： Nathan Bluzer

发明人： Nathan Bluzer

IPC分类号： H01L27/04 ,  H01L29/78 ,  H01L27/02

CPC分类号： H01L27/04 ,  H01L27/0251 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14812 ,  H04N5/363

摘要： A high sensitivity, high speed, and low noise, semiconductor non-destructive read-out (NDRO) device (700) for the conversion of a generated signal charge (110) into an output voltage having provisions for charge integration, charge transfer, and nondestructive charge read-out without kTC reset noise. The read-out device (700) includes charge sensing potential wells (520), a MOSFET having a gate (705), a source (145), and a drain (720), a feedback amplifier (305), a current generator (310), a reset gate (650), a reset drain (530), a multiplexer gate (820), and a pair of adjacent CCD transfer gates (750 and 760). CMOS detector pixels with this NDRO form a compact structure for integrating generated charge, and high sensitivity readout, without kTC reset noise. The NDRO in CCD devices provides a fast sensitive charge to voltage transducer without kTC reset noise. Connecting several NDRO stages in series (1000) provides multiple readout of a pixel to further improve sensitivity and performance of charge to voltage transduction.

摘要翻译： 用于将产生的信号电荷（110）转换成具有用于电荷积分，电荷转移以及电荷积分的输出电压的高灵敏度，高灵敏度和低噪声半导体非破坏性读出（NDRO）器件（700） 非破坏性电荷读出，无kTC复位噪声。 读出装置（700）包括电荷感测势阱（520），具有栅极（705），源极（145）和漏极（720）的MOSFET，反馈放大器（305），电流发生器 310），复位栅极（650），复位漏极（530），多路复用器门（820）和一对相邻的CCD传输门（750和760）。 具有这种NDRO的CMOS检测器像素形成了紧凑的结构，用于集成生成的电荷和高灵敏度读出，而没有kTC复位噪声。 CCD器件中的NDRO为电压传感器提供快速敏感的电荷，无需kTC复位噪声。 串联连接多个NDRO级（1000）可提供多个像素读数，以进一步提高电压对电压传导的灵敏度和性能。