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公开(公告)号：US20110249160A1
公开(公告)日：2011-10-13
申请号：US12759472
申请日：2010-04-13
IPC分类号： H04N5/335 , H01L21/28 , H01L29/768
CPC分类号： H01L29/76891 , H01L21/3003
摘要： An Indium Tin Oxide (ITO) gate charge coupled device (CCD) is provided. The CCD device comprises a CCD structure having a substrate layer, an oxide layer over the substrate layer, a nitride layer over the oxide layer and a plurality of parallel ITO gates extending over the nitride layer. The CCD device further comprises a plurality of substantially similarly sized channel stop regions in the substrate layer that extend transversely relative to the ITO gates, such that a given pair of channel stop regions defining a pixel column of the CCD structure. The CCD device also comprises a plurality of vent openings that extend through the nitride layer along the plurality of substantially similarly sized channel stop regions to allow for penetration of hydrogen to at least one of the oxide layer and the substrate layer.
摘要翻译： 提供氧化铟锡（ITO）栅极电荷耦合器件（CCD）。 CCD器件包括具有衬底层，衬底层上的氧化物层，氧化物层上的氮化物层和在氮化物层上延伸的多个平行ITO栅极的CCD结构。 CCD器件还包括在衬底层中相对于ITO栅极横向延伸的多个基本相似尺寸的通道阻挡区域，使得限定CCD结构的像素列的给定的一对通道阻挡区域。 CCD装置还包括多个通气孔，其沿着多个基本类似尺寸的通道停止区域延伸穿过氮化物层，以允许氢气渗透到氧化物层和衬底层中的至少一个。
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公开(公告)号：US08345134B2
公开(公告)日：2013-01-01
申请号：US12759472
申请日：2010-04-13
IPC分类号： H04N5/335 , H01L27/148 , H01L21/00
CPC分类号： H01L29/76891 , H01L21/3003
摘要： An Indium Tin Oxide (ITO) gate charge coupled device (CCD) is provided. The CCD device comprises a CCD structure having a substrate layer, an oxide layer over the substrate layer, a nitride layer over the oxide layer and a plurality of parallel ITO gates extending over the nitride layer. The CCD device further comprises a plurality of substantially similarly sized channel stop regions in the substrate layer that extend transversely relative to the ITO gates, such that a given pair of channel stop regions defining a pixel column of the CCD structure. The CCD device also comprises a plurality of vent openings that extend through the nitride layer along the plurality of substantially similarly sized channel stop regions to allow for penetration of hydrogen to at least one of the oxide layer and the substrate layer.
摘要翻译： 提供氧化铟锡（ITO）栅极电荷耦合器件（CCD）。 CCD器件包括具有衬底层，衬底层上的氧化物层，氧化物层上的氮化物层和在氮化物层上延伸的多个平行ITO栅极的CCD结构。 CCD器件还包括在衬底层中相对于ITO栅极横向延伸的多个基本相似尺寸的通道阻挡区域，使得限定CCD结构的像素列的给定的一对通道阻挡区域。 CCD装置还包括多个通气孔，其沿着多个基本类似尺寸的通道停止区域延伸穿过氮化物层，以允许氢气渗透到氧化物层和衬底层中的至少一个。
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公开(公告)号：US08477226B2
公开(公告)日：2013-07-02
申请号：US12730076
申请日：2010-03-23
申请人： Bron R. Frias , Nathan Bluzer , Paul A. Tittel
发明人： Bron R. Frias , Nathan Bluzer , Paul A. Tittel
IPC分类号： H04N3/14 , H04N5/335 , H01L27/148
CPC分类号： H04N5/37206 , H04N5/359
摘要： A charge coupled device imager, which can operate in time delay and integration mode, can be adapted to include variable columns having one or more blocking gates or other barriers that can be independently controlled and used to divide a used portion from an unused portion. The blocking gates may require less power to electrically insulate used from the unused sections. In this regard, an imager's charge handling capacity and dynamic range can be improved, while lowering CCD operating power requirements. Blooming drains can also be included to enhance the functionality of the imager and enable bidirectional imaging capability.
摘要翻译： 可以在时间延迟和积分模式下操作的电荷耦合器件成像器可以适于包括具有一个或多个阻挡栅极的可变列或可独立控制并用于将使用的部分与未使用部分分开的其它屏障。 阻塞门可能需要更少的功率来使用与未使用的部分电绝缘。 在这方面，可以提高成像器的电荷处理能力和动态范围，同时降低CCD的工作功率要求。 还可以包括盛开的排水管，以增强成像仪的功能，并实现双向成像功能。
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公开(公告)号：US20110234877A1
公开(公告)日：2011-09-29
申请号：US12730076
申请日：2010-03-23
申请人： Bron R. Frias , Nathan Bluzer , Paul A. Tittel
发明人： Bron R. Frias , Nathan Bluzer , Paul A. Tittel
IPC分类号： H04N5/335
CPC分类号： H04N5/37206 , H04N5/359
摘要： A charge coupled device imager, which can operate in time delay and integration mode, can be adapted to include variable columns having one or more blocking gates or other barriers that can be independently controlled and used to divide a used portion from an unused portion. The blocking gates may require less power to electrically insulate used from the unused sections. In this regard, an imager's charge handling capacity and dynamic range can be improved, while lowering CCD operating power requirements. Blooming drains can also be included to enhance the functionality of the imager and enable bidirectional imaging capability.
摘要翻译： 可以在时间延迟和积分模式下操作的电荷耦合器件成像器可以适于包括具有一个或多个阻挡栅极的可变列或可独立控制并用于将使用部分与未使用部分分开的其它屏障。 阻塞门可能需要更少的功率来使用与未使用的部分电绝缘。 在这方面，可以提高成像器的电荷处理能力和动态范围，同时降低CCD的工作功率要求。 还可以包括盛开的排水管，以增强成像仪的功能，并实现双向成像功能。
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5.发明授权Scanning focal plane sensor systems and methods for imaging large dynamic range scenes 有权扫描焦平面传感器系统和大型动态范围场景成像方法公开(公告)号：US08780418B1
公开(公告)日：2014-07-15
申请号：US13838054
申请日：2013-03-15
申请人： Nathan Bluzer , Bron R. Frias , Paul A. Tittel
发明人： Nathan Bluzer , Bron R. Frias , Paul A. Tittel
CPC分类号： H04N5/378 , G01C11/025 , H01L27/14609 , H04N5/2353 , H04N5/353 , H04N5/372
摘要： A scanning focal plane sensor and method are described for image capturing of object space (or scenes). In one example, a focal plane sensor for a scanning imaging system is provided. The focal plane sensor for a scanning imaging system includes M×N Time Delay Integration (TDI) imaging Charge Coupled Device (CCD), where M is a number of TDI columns and N is a number of TDI stages per each column. A detector is connected to each TDI stage. The focal plane sensor includes an imaging controller configured to mechanize sampling the brightness value of each sensor pixel's initial footprint in object space and select a number of charge integrating TDI stages for substantially equalizing the inter sensor pixels' signal to noise ratios.
摘要翻译： 描述了用于对象空间（或场景）的图像捕获的扫描焦平面传感器和方法。 在一个示例中，提供了用于扫描成像系统的焦平面传感器。 用于扫描成像系统的焦平面传感器包括M×N时间延迟积分（TDI）成像电荷耦合器件（CCD），其中M是多个TDI列，N是每列的TDI级数。 检测器连接到每个TDI级。 焦平面传感器包括成像控制器，其被配置为机械化对对象空间中的每个传感器像素的初始占地面积的亮度值进行采样，并选择多个电荷积分TDI级，以基本上均衡传感器像素的信噪比。
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公开(公告)号：US5369040A
公开(公告)日：1994-11-29
申请号：US58629
申请日：1993-04-12
申请人： James Halvis , Nathan Bluzer , Robert R. Shiskowski , Li-Shu Chen
发明人： James Halvis , Nathan Bluzer , Robert R. Shiskowski , Li-Shu Chen
IPC分类号： H01L21/8234 , H01L31/18
CPC分类号： H01L21/823406
摘要： An improved MOS photodetector having polysilicon gate material which is made more transparent to visible light by the addition of up to 50% carbon, and preferably about 10% carbon. The surfaces of the polysilicon-carbon gates are oxidized to form a silicon dioxide dielectric layer, thus eliminating the need to deposit a separate dielectric layer for isolation of adjacent gates in an overlapping gate array. The elimination of a separate dielectric layer permits all gates to be formed directly on the substrate dielectric layer, thus providing a uniform drive voltage requirement across the array.
摘要翻译： 一种具有多晶硅栅极材料的改进的MOS光电探测器，其通过加入高达50％的碳，优选约10％的碳使得对可见光更透明。 多晶硅 - 碳栅极的表面被氧化形成二氧化硅电介质层，从而消除了在重叠栅极阵列中隔离相邻栅极的单独介电层的需要。 消除单独的电介质层允许所有栅极直接形成在衬底介质层上，从而在整个阵列上提供均匀的驱动电压要求。
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公开(公告)号：US09029750B1
公开(公告)日：2015-05-12
申请号：US13196603
申请日：2011-08-02
申请人： Nathan Bluzer
发明人： Nathan Bluzer
CPC分类号： H01L27/04 , H01L27/0251 , H01L27/14603 , H01L27/14612 , H01L27/14812 , H04N5/363
摘要： A high sensitivity, high speed, and low noise, semiconductor non-destructive read-out (NDRO) device (700) for the conversion of a generated signal charge (110) into an output voltage having provisions for charge integration, charge transfer, and nondestructive charge read-out without kTC reset noise. The read-out device (700) includes charge sensing potential wells (520), a MOSFET having a gate (705), a source (145), and a drain (720), a feedback amplifier (305), a current generator (310), a reset gate (650), a reset drain (530), a multiplexer gate (820), and a pair of adjacent CCD transfer gates (750 and 760). CMOS detector pixels with this NDRO form a compact structure for integrating generated charge, and high sensitivity readout, without kTC reset noise. The NDRO in CCD devices provides a fast sensitive charge to voltage transducer without kTC reset noise. Connecting several NDRO stages in series (1000) provides multiple readout of a pixel to further improve sensitivity and performance of charge to voltage transduction.
摘要翻译： 用于将产生的信号电荷（110）转换成具有用于电荷积分，电荷转移以及电荷积分的输出电压的高灵敏度，高灵敏度和低噪声半导体非破坏性读出（NDRO）器件（700） 非破坏性电荷读出，无kTC复位噪声。 读出装置（700）包括电荷感测势阱（520），具有栅极（705），源极（145）和漏极（720）的MOSFET，反馈放大器（305），电流发生器 310），复位栅极（650），复位漏极（530），多路复用器门（820）和一对相邻的CCD传输门（750和760）。 具有这种NDRO的CMOS检测器像素形成了紧凑的结构，用于集成生成的电荷和高灵敏度读出，而没有kTC复位噪声。 CCD器件中的NDRO为电压传感器提供快速敏感的电荷，无需kTC复位噪声。 串联连接多个NDRO级（1000）可提供多个像素读数，以进一步提高电压对电压传导的灵敏度和性能。
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8.发明授权公开(公告)号：US07989249B2
公开(公告)日：2011-08-02
申请号：US12365284
申请日：2009-02-04
IPC分类号： H01L21/00
CPC分类号： H01L31/08 , B81B3/0081 , B81B2201/0207 , H01L23/3121 , H01L31/18 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a micro-electrical-mechanical system with thermally isolated active elements. Such a system may embody a bolometer, which is well suited for detecting electromagnetic radiation between 90 GHz and 30 THz while operating at room temperature. The method also discloses a generalized process for manufacturing circuitry incorporating active and passive micro-electrical-mechanical systems in a silicon wafer.
摘要翻译： 一种制造具有热隔离有源元件的微机电系统的方法。 这样的系统可以包含测辐射热计，这适用于在室温下操作时检测90GHz和30Hz之间的电磁辐射。 该方法还公开了一种用于制造在硅晶片中并入有源和无源微机电系统的电路的通用方法。
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公开(公告)号：US20050087687A1
公开(公告)日：2005-04-28
申请号：US10689720
申请日：2003-10-22
申请人： Nathan Bluzer
发明人： Nathan Bluzer
CPC分类号： G01J5/20
摘要： Electro-thermal feedback is utilized for zeroing the thermal conductance between a bolometer type detector element of a pixel in a thermal radiation sensor assembly and the environments through its mechanical support structure and electrical interconnects, thereby limiting the thermal conductance primarily through photon radiation. Zeroing of the thermal conductance associated with the mechanical support and electrical readout interconnect structures is achieved by electro-thermal feedback that adjust the temperature of an intermediate stage by the heating effect of a bipolar transistor amplifier circuit so that the temperature across the mechanical support and electrical interconnects structures are zeroed thereby greatly improving the thermal isolation, the responsivity and sensitivity of the electromagnetic radiation sensor.
摘要翻译： 电 - 热反馈用于使热辐射传感器组件中的像素的辐射热计型探测器元件与通过其机械支撑结构和电互连的环境之间的热传导归零，从而主要通过光子辐射来限制热传导。 通过电热反馈实现与机械支撑和电读出互连结构相关联的热传导归零，其通过双极晶体管放大器电路的加热效应来调节中间级的温度，使得机械支撑和电气 互连结构被归零，从而大大提高了电磁辐射传感器的热隔离，响应性和灵敏度。
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公开(公告)号：US06489615B2
公开(公告)日：2002-12-03
申请号：US09738058
申请日：2000-12-15
申请人： Nathan Bluzer
发明人： Nathan Bluzer
IPC分类号： G01J500
摘要： Electro-thermal feedback is utilized for removing thermal conductance between a bolometer's absorber element of a pixel in a thermal radiation sensor assembly and the environments through its mechanical support structure and electrical interconnects, thereby limiting the thermal conductance primarily through photon radiation. Zeroing the thermal conductance associated with the mechanical support structure and electrical interconnects is achieved by electro-thermal feedback that adjust the temperature of an intermediate stage of the mechanical support structure and electrical interconnects to equal the bolometer's absorber element temperature.
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