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    Thin film magnetic recording disk comprising a metallic disk blank, a substantially non-magnetic Ni-Cr-O film having a textured surface and a magnetic film
    2.
    发明授权
    Thin film magnetic recording disk comprising a metallic disk blank, a substantially non-magnetic Ni-Cr-O film having a textured surface and a magnetic film 失效
    薄膜磁记录盘包括金属盘坯，具有纹理表面的基本上非磁性的Ni-Cr-O膜和磁膜

    公开(公告)号：US5436047A

    公开(公告)日：1995-07-25

    申请号：US138934

    申请日：1993-10-15

    申请人： James K. Howard ,  Hung-Chang W. Huang ,  Cherngye Hwang ,  Anthony W. Wu

    发明人： James K. Howard ,  Hung-Chang W. Huang ,  Cherngye Hwang ,  Anthony W. Wu

    IPC分类号： G11B5/66 ,  G11B5/64 ,  G11B5/73 ,  G11B5/738 ,  G11B5/84 ,  G11B5/85 ,  G11B5/851 ,  G11B5/00

    CPC分类号： G11B5/7325 ,  G11B5/8404 ,  Y10S428/90 ,  Y10S428/938 ,  Y10T428/24355 ,  Y10T428/265

    摘要： A magnetic recording disk has an improved surface film formed on the disk blank. A sputter-deposited surface coating containing nickel, chromium and oxygen (Ni--Cr--O) is formed on a AlMg disk blank, after which a cobalt alloy magnetic layer is formed over the Ni--Cr--O coating and a protective overcoat is formed over magnetic layer. The use of the Ni--Cr--O coating on the disk blank eliminates the need for a wet electroless deposition process for creation of a surface coating and results in an inherent texturing of the subsequently deposited magnetic film and protective overcoat which conform to the surface texture of the sputter-deposited Ni--Cr--O. The disks made with the Ni--Cr--O surface film exhibit a very low static friction force between the air-bearing slider and the disk surface when the disks are used in contact start/stop (CSS) disk files.

    摘要翻译： 磁记录盘具有形成在盘坯上的改进的表面膜。 在AlMg盘坯上形成包含镍，铬和氧（Ni-Cr-O）的溅射沉积表面涂层，之后在Ni-Cr-O涂层上形成钴合金磁性层，形成保护外涂层 磁性层。 在盘坯上使用Ni-Cr-O涂层消除了对用于产生表面涂层的湿式无电沉积工艺的需要，并导致随后沉积的磁性膜和保护性外涂层的固有纹理，其符合表面纹理 的溅射沉积的Ni-Cr-O。 使用Ni-Cr-O表面薄膜制成的圆盘，当磁盘用于触点启动/停止（CSS）磁盘文件时，在空气滑动滑块和磁盘表面之间显示非常低的静摩擦力。

    Magnetoresistive sensor having antiferromagnetic layer for exchange bias
    4.
    发明授权
    Magnetoresistive sensor having antiferromagnetic layer for exchange bias 失效
    具有用于交换偏置的反铁磁层的磁阻传感器

    公开(公告)号：US5315468A

    公开(公告)日：1994-05-24

    申请号：US920943

    申请日：1992-07-28

    申请人： Tsann Lin ,  James K. Howard ,  Cherngye Hwang ,  Daniele Mauri ,  Norbert Staud

    发明人： Tsann Lin ,  James K. Howard ,  Cherngye Hwang ,  Daniele Mauri ,  Norbert Staud

    IPC分类号： G11B5/39 ,  G11B5/127 ,  G11B5/33

    CPC分类号： G11B5/3903 ,  G11B5/3932

    摘要： A magnetoresistive (MR) sensor comprising a sputtered layer of ferromagnetic material and a sputtered layer of antiferromagnetic nickel-manganese (Ni-Mn) to provide an exchange coupled longitudinal bias field in the MR element is described. The antiferromagnetic layer overlays the MR layer and may be patterned to provide the longitudinal bias field only in the end regions of the MR layer. Alternatively, the antiferromagnetic layer can underlay the MR layer with a Zr underlayer to enhance the exchange-coupled field. As initially deposited, the Ni-Mn layer is face-centered-cubic and exhibits little or no exchange-coupled field. After one annealing cycle at a relatively low temperature, the Ni-Mn layer is face-centered-tetragonal and exhibits increased crystallographic ordering and provides sufficient exchange coupling for the MR element to operate. Addition of chromium to the Ni-Mn alloy provides increased corrosion resistance.

    摘要翻译： 描述了一种磁阻（MR）传感器，其包括铁磁材料的溅射层和反铁磁镍锰（Ni-Mn）的溅射层，以在MR元件中提供交换耦合的纵向偏置场。 反铁磁层覆盖MR层，并且可以被图案化以仅在MR层的端部区域中提供纵向偏置场。 或者，反铁磁层可以用Zr底层来衬底MR层以增强交换耦合场。 最初沉积时，Ni-Mn层是面心立方体，表现出很少或没有交换耦合场。 在相对较低温度下的一个退火循环之后，Ni-Mn层是面对中心的四边形，并且显示出增加的晶体学顺序，并提供用于MR元件操作的足够的交换耦合。 向Ni-Mn合金中添加铬提高了耐腐蚀性。

    Magnetoresistive read transducer containing a titanium and tungsten alloy spacer layer
    5.
    发明授权
    Magnetoresistive read transducer containing a titanium and tungsten alloy spacer layer 失效
    含有钛和钨合金间隔层的磁阻读取传感器

    公开(公告)号：US5258884A

    公开(公告)日：1993-11-02

    申请号：US779419

    申请日：1991-10-17

    申请人： James K. Howard ,  Cherngye Hwang

    发明人： James K. Howard ,  Cherngye Hwang

    IPC分类号： G11B5/39

    CPC分类号： G11B5/399

    摘要： A magnetoresistive (MR) read transducer has a thin film MR layer of ferromagnetic material and a nonmagnetic spacer layer in contact with the MR layer. The thin film spacer layer comprises an alloy of titanium (Ti) and tungsten (W) having a high resistivity. A thin film of soft magnetic material is deposited in contact with the nonmagnetic spacer layer so that the soft magnetic material is positioned parallel to, but spaced from, the MR layer. A feature of the invention is that the resistivity of the nonmagnetic spacer layer can be a specific value selected from a broad range of resistivity values by selecting the thickness, the Ti content, and/or the nitrogen content of the nonmagnetic spacer layer.

    摘要翻译： 磁阻（MR）读取传感器具有铁磁材料的薄膜MR层和与MR层接触的非磁性间隔层。 薄膜间隔层包括具有高电阻率的钛（Ti）和钨（W）的合金。 沉积与非磁性间隔层接触的软磁性材料的薄膜，使得软磁性材料平行于MR层定位。 本发明的特征在于，通过选择非磁性间隔层的厚度，Ti含量和/或氮含量，非磁性间隔层的电阻率可以是从广泛的电阻率值中选择的特定值。

    Magnetoresistive sensor having antiferromagnetic exchange bias
    6.
    发明授权
    Magnetoresistive sensor having antiferromagnetic exchange bias 失效
    具有反铁磁交换偏置的磁阻传感器

    公开(公告)号：US5436778A

    公开(公告)日：1995-07-25

    申请号：US213882

    申请日：1994-03-15

    申请人： Tsann Lin ,  James K. Howard ,  Cherngye Hwang ,  Daniele Mauri ,  Norbert Staud

    发明人： Tsann Lin ,  James K. Howard ,  Cherngye Hwang ,  Daniele Mauri ,  Norbert Staud

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3903 ,  G11B5/3932

    摘要： A magnetic disk storage system wherein a magnetic includes a magnetoresistive sensor is described. The MR sensor comprises a sputtered layer of ferromagnetic material and a sputtered layer of antiferromagnetic nickel-manganese (Ni-Mn) to provide an exchange coupled longitudinal bias field in the MR element. The antiferromagnetic layer overlays the MR layer and may be patterned to provide the longitudinal bias field only in the end regions of the MR layer. Alternatively, the antiferromagnetic layer can underlay the MR layer with a Zr underlayer to enhance the exchange-coupled field. As initially deposited, the Ni-Mn layer has a face-centered-cubic crystalline structure and exhibits little or no exchange-coupled field. After one annealing cycle at a relatively low temperature, the Ni-Mn layer crystalline structure is face-centered-tetragonal and exhibits increased crystallographic ordering and provides sufficient exchange coupling for the MR element to operate. Addition of chromium to the Ni-Mn alloy provides increased corrosion resistance.

    摘要翻译： 描述了一种磁盘存储系统，其中磁换能器包括磁阻传感器。 MR传感器包括铁磁材料的溅射层和反铁磁镍锰（Ni-Mn）的溅射层，以在MR元件中提供交换耦合的纵向偏置场。 反铁磁层覆盖MR层，并且可以被图案化以仅在MR层的端部区域中提供纵向偏置场。 或者，反铁磁层可以用Zr底层来衬底MR层以增强交换耦合场。 最初沉积时，Ni-Mn层具有面心立方晶体结构，并且表现出很少或没有交换耦合场。 在相对较低温度下的一个退火循环之后，Ni-Mn层晶体结构是面心四面体并且显示出增加的晶体顺序，并且为MR元件提供足够的交换耦合以进行操作。 向Ni-Mn合金中添加铬提高了耐腐蚀性。

    Method for fabricating a magnetoresistive sensor having antiferromagnetic layer
    7.
    发明授权
    Method for fabricating a magnetoresistive sensor having antiferromagnetic layer 失效
    制造具有反铁磁层的磁阻传感器的方法

    公开(公告)号：US5380548A

    公开(公告)日：1995-01-10

    申请号：US213883

    申请日：1994-03-15

    申请人： Tsann Lin ,  James K. Howard ,  Cherngye Hwang ,  Daniele Mauri ,  Norbert Staud

    发明人： Tsann Lin ,  James K. Howard ,  Cherngye Hwang ,  Daniele Mauri ,  Norbert Staud

    IPC分类号： G11B5/39 ,  H01F10/02

    CPC分类号： G11B5/3903 ,  G11B5/3932

    摘要： A magnetoresistive (MR) sensor comprising a sputtered layer of ferromagnetic material and a sputtered layer of antiferromagnetic nickel-manganese (Ni-Mn) to provide an exchange coupled longitudinal bias field in the MR element is described. The antiferromagnetic layer overlays the MR layer and may be patterned to provide the longitudinal bias field only in the end regions of the MR layer. Alternatively, the antiferromagnetic layer can underlay the MR layer with a Zr underlayer to enhance the exchange-coupled field. As initially deposited, the Ni-Mn layer is face-centered-cubic and exhibits little or no exchange-coupled field. After one annealing cycle at a relatively low temperature, the Ni-Mn layer is face-centered-tetragonal and exhibits increased crystallographic ordering and provides sufficient exchange coupling for the MR element to operate. Addition of chromium to the Ni-Mn alloy provides increased corrosion resistance.

    摘要翻译： 描述了一种磁阻（MR）传感器，其包括铁磁材料的溅射层和反铁磁镍锰（Ni-Mn）的溅射层，以在MR元件中提供交换耦合的纵向偏置场。 反铁磁层覆盖MR层，并且可以被图案化以仅在MR层的端部区域中提供纵向偏置场。 或者，反铁磁层可以用Zr底层来衬底MR层以增强交换耦合场。 最初沉积时，Ni-Mn层是面心立方体，表现出很少或没有交换耦合场。 在相对较低温度下的一个退火循环之后，Ni-Mn层是面对中心的四边形，并且显示出增加的晶体学顺序，并提供用于MR元件操作的足够的交换耦合。 向Ni-Mn合金中添加铬提高了耐腐蚀性。

    Method for making a magnetoresistive read transducer
    10.
    发明授权
    Method for making a magnetoresistive read transducer 失效
    制造磁阻读取传感器的方法

    公开(公告)号：US4940511A

    公开(公告)日：1990-07-10

    申请号：US355239

    申请日：1989-05-22

    申请人： Robert E. Fontana, Jr. ,  James K. Howard ,  James H. Lee ,  Haralambos Lefakis

    发明人： Robert E. Fontana, Jr. ,  James K. Howard ,  James H. Lee ,  Haralambos Lefakis

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3903 ,  Y10T29/49044 ,  Y10T29/49046

    摘要： A magnetoresistive (MR) read transducer comprising a thin film MR layer formed of ferromagnetic material and a nonmagnetic thin film spacer layer in contact with the MR layer. The spacer layer comprises a material selected from the group consisting of nichrome and nichrome with chromium oxide. A thin film of soft magnetic material is deposited in contact with the spacer layer so that a transverse bias is produced in at least a part of the MR layer. A feature of the invention is that the resistivity of the spacer layer can be chosen by selecting the ratio of nichrome to chromium oxide in the spacer layer. In a specific embodiment the spacer layer extends over only the central region of the MR layer. In case the MR layer is a nickel based alloy, a wet chemical etching process using an etchant comprising an aqueous solution of ceric ammonium nitrate and acetic acid can be used to pattern the spacer layer.

    摘要翻译： 磁阻（MR）读取换能器包括由铁磁材料形成的薄膜MR层和与MR层接触的非磁性薄膜间隔层。 间隔层包括选自镍铬合金和镍铬合金与铬氧化物的材料。 沉积与间隔层接触的软磁性材料的薄膜，使得在MR层的至少一部分中产生横向偏压。 本发明的一个特征是间隔层的电阻率可以通过选择间隔层中的镍铬合金与氧化铬的比例来选择。 在具体实施例中，间隔层仅在MR层的中心区域上延伸。 在MR层是镍基合金的情况下，可以使用使用包含硝酸铈铵和乙酸的水溶液的蚀刻剂的湿化学蚀刻工艺来对间隔层进行图案化。