公开(公告)号：US20120061578A1

公开(公告)日：2012-03-15

申请号：US13175097

申请日：2011-07-01

申请人： James Lim ,  Kwan-Wook Jung ,  Dong-Hyuk Kim ,  Jea-Eun Ryu

发明人： James Lim ,  Kwan-Wook Jung ,  Dong-Hyuk Kim ,  Jea-Eun Ryu

IPC分类号： G01T1/24

CPC分类号： G01T1/2928 ,  H01L27/14663 ,  H01L27/14692

摘要： An X-ray detector panel comprises: a substrate; a transistor including a gate electrode disposed on the substrate, a gate insulating layer disposed on the gate electrode, an active layer disposed on the gate insulating layer, and a source electrode and a drain electrode disposed on the active layer and separated from each other; a photodiode including a first electrode connected to the drain electrode of the transistor, a photoconductive layer disposed on the first electrode, and a second electrode disposed on the photoconductive layer; an interlayer insulating layer including a first interlayer insulating layer covering the transistor and the photodiode, the first interlayer insulating layer being formed of an insulating material having a band gap energy of about 8 eV to about 10 eV; a data line disposed on the interlayer insulating layer and contacting the source electrode of the transistor via the interlayer insulating layer; a bias line disposed on the interlayer insulating layer and contacting the second electrode of the photodiode via the interlayer insulating layer; and a passivation layer disposed on the data line, the bias line, and the interlayer insulating layer.

摘要翻译： X射线检测器面板包括：基板; 设置在所述基板上的栅电极，配置在所述栅电极上的栅极绝缘层，配置在所述栅极绝缘层上的有源层，以及设置在所述有源层上并分离的源电极和漏电极的晶体管， 光电二极管，包括连接到晶体管的漏电极的第一电极，设置在第一电极上的光电导层和设置在光电导层上的第二电极; 层间绝缘层，包括覆盖所述晶体管和所述光电二极管的第一层间绝缘层，所述第一层间绝缘层由具有约8eV至约10eV的带隙能量的绝缘材料形成; 数据线，设置在所述层间绝缘层上，并经由所述层间绝缘层与所述晶体管的源电极接触; 偏置线，设置在所述层间绝缘层上，并经由所述层间绝缘层与所述光电二极管的所述第二电极接触; 以及设置在数据线，偏置线和层间绝缘层上的钝化层。

公开(公告)号：US08916830B2

公开(公告)日：2014-12-23

申请号：US13175097

申请日：2011-07-01

申请人： James Lim ,  Kwan-Wook Jung ,  Dong-Hyuk Kim ,  Jea-Eun Ryu

发明人： James Lim ,  Kwan-Wook Jung ,  Dong-Hyuk Kim ,  Jea-Eun Ryu

IPC分类号： H01L27/146 ,  G01T1/20 ,  G01T1/24 ,  G01T1/29

CPC分类号： G01T1/2928 ,  H01L27/14663 ,  H01L27/14692

摘要： An X-ray detector panel comprises: a substrate; a transistor including a gate electrode disposed on the substrate, a gate insulating layer disposed on the gate electrode, an active layer disposed on the gate insulating layer, and a source electrode and a drain electrode disposed on the active layer and separated from each other; a photodiode including a first electrode connected to the drain electrode of the transistor, a photoconductive layer disposed on the first electrode, and a second electrode disposed on the photoconductive layer; an interlayer insulating layer including a first interlayer insulating layer covering the transistor and the photodiode, the first interlayer insulating layer being formed of an insulating material having a band gap energy of about 8 eV to about 10 eV; a data line disposed on the interlayer insulating layer and contacting the source electrode of the transistor via the interlayer insulating layer; a bias line disposed on the interlayer insulating layer and contacting the second electrode of the photodiode via the interlayer insulating layer; and a passivation layer disposed on the data line, the bias line, and the interlayer insulating layer.

摘要翻译： X射线检测器面板包括：基板; 设置在所述基板上的栅电极，配置在所述栅电极上的栅极绝缘层，配置在所述栅极绝缘层上的有源层，以及设置在所述有源层上并分离的源电极和漏电极的晶体管， 光电二极管，包括连接到晶体管的漏电极的第一电极，设置在第一电极上的光电导层和设置在光电导层上的第二电极; 层间绝缘层，包括覆盖所述晶体管和所述光电二极管的第一层间绝缘层，所述第一层间绝缘层由具有约8eV至约10eV的带隙能量的绝缘材料形成; 数据线，设置在所述层间绝缘层上，并经由所述层间绝缘层与所述晶体管的源电极接触; 偏置线，设置在所述层间绝缘层上，并经由所述层间绝缘层与所述光电二极管的所述第二电极接触; 以及设置在数据线，偏置线和层间绝缘层上的钝化层。

公开(公告)号：US08803210B2

公开(公告)日：2014-08-12

申请号：US12975568

申请日：2010-12-22

申请人： Kwan-Wook Jung ,  Dong-Hyuk Kim ,  Woo-Jae Lim ,  Jea-Eun Ryu

发明人： Kwan-Wook Jung ,  Dong-Hyuk Kim ,  Woo-Jae Lim ,  Jea-Eun Ryu

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14663

摘要： An X-ray detector includes a substrate; a gate line that is extended in a first direction on the substrate; a gate electrode that is extended from the gate line; a semiconductor layer that is positioned on the gate electrode; a source electrode and drain electrode that are positioned on the semiconductor layer; a lower electrode that is extended from the drain electrode; a photodiode that is positioned on the lower electrode; a first insulation layer that is positioned on the source electrode and the drain electrode and that includes a first opening that exposes the source electrode; and a data line that is extended in a second direction intersecting a first direction on the first insulation layer to intersect the gate line with the first insulation layer interposed between the data line and the gate line, and the data line being electrically connected to the source electrode through the first opening.

摘要翻译： X射线检测器包括：基板; 在基板上沿第一方向延伸的栅极线; 从栅极线延伸的栅电极; 位于栅电极上的半导体层; 位于所述半导体层上的源电极和漏电极; 从所述漏电极延伸的下电极; 位于下电极上的光电二极管; 第一绝缘层，其位于源电极和漏电极上，并且包括暴露源电极的第一开口; 以及数据线，其在与所述第一绝缘层上的第一方向相交的第二方向上延伸以与所述栅极线相交，并且所述第一绝缘层插入在所述数据线和所述栅极线之间，并且所述数据线电连接到所述源极 电极通过第一个开口。

公开(公告)号：US20110164723A1

公开(公告)日：2011-07-07

申请号：US12973529

申请日：2010-12-20

申请人： Jin-Woo Park ,  Kwan-Wook Jung ,  Jea-Eun Ryu

发明人： Jin-Woo Park ,  Kwan-Wook Jung ,  Jea-Eun Ryu

IPC分类号： H05G1/64

CPC分类号： H04N5/32 ,  H04N5/3651

摘要： An X-ray detecting apparatus constructed as the present invention receives an X-ray passing through a subject during a window time in which the subject is exposed to the X-ray, and converts the X-ray into an electrical signal to output the electrical signal as a video signal. The X-ray detecting apparatus subtracts the offset video signal determined according to the window time in the video signal to generate a real video signal representing the X-ray result for photographing the subject.

摘要翻译： 作为本发明构成的X射线检测装置在被检体暴露于X射线的窗口时间内接收通过被检体的X射线，并且将X射线转换成电信号以输出电 信号作为视频信号。 X射线检测装置减去视频信号中根据窗口时间确定的偏移视频信号，以产生表示拍摄对象的X射线结果的实际视频信号。

公开(公告)号：US08681940B2

公开(公告)日：2014-03-25

申请号：US12973529

申请日：2010-12-20

申请人： Jin-Woo Park ,  Kwan-Wook Jung ,  Jea-Eun Ryu

发明人： Jin-Woo Park ,  Kwan-Wook Jung ,  Jea-Eun Ryu

IPC分类号： H05G1/64

CPC分类号： H04N5/32 ,  H04N5/3651

摘要： An X-ray detecting apparatus constructed as the present invention receives an X-ray passing through a subject during a window time in which the subject is exposed to the X-ray, and converts the X-ray into an electrical signal to output the electrical signal as a video signal. The X-ray detecting apparatus subtracts the offset video signal determined according to the window time in the video signal to generate a real video signal representing the X-ray result for photographing the subject.

摘要翻译： 作为本发明构成的X射线检测装置在被检体暴露于X射线的窗口时间内接收通过被检体的X射线，并且将X射线转换成电信号以输出电 信号作为视频信号。 X射线检测装置减去视频信号中根据窗口时间确定的偏移视频信号，以产生表示拍摄对象的X射线结果的实际视频信号。

公开(公告)号：US08299465B2

公开(公告)日：2012-10-30

申请号：US12972393

申请日：2010-12-17

申请人： Kwan-Wook Jung ,  Dong-Hyuk Kim

发明人： Kwan-Wook Jung ,  Dong-Hyuk Kim

IPC分类号： H01L31/119

CPC分类号： H01L31/022408 ,  H01L27/1461 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14663 ,  H01L27/14692 ,  H01L31/119

摘要： An X-ray detector constructed as an exemplary embodiment of the present invention includes a semiconductor layer, a data line including a source electrode covering a first portion of the semiconductor layer, a drain electrode disposed opposite to the source electrode, a first lower electrode formed on the upper portion of a second portion of the semiconductor layer and a gate insulating layer and elongated from the drain electrode, and a passivation layer formed on the upper portion of one part of the lower electrode including the drain electrode. Further, the second lower electrode is formed approaching the gate electrode. The X-ray detector constructed as the exemplary embodiment of the present invention includes a second lower electrode formed on the passivation layer and placed approaching a gate electrode. The area in which a diode is disposed may be maximized, and the amount of leakage current may be reduced.

摘要翻译： 作为本发明的示例性实施例构造的X射线检测器包括半导体层，包括覆盖半导体层的第一部分的源电极的数据线，与源电极相对设置的漏极，形成的第一下电极 在所述半导体层的第二部分的上部和栅极绝缘层上并且从所述漏极延伸，以及钝化层，形成在包括所述漏电极的所述下电极的一部分的上部。 此外，第二下电极形成为接近栅电极。 作为本发明的示例性实施例构造的X射线检测器包括形成在钝化层上并放置为接近栅电极的第二下电极。 设置二极管的区域可以最大化，并且可以减少泄漏电流的量。

公开(公告)号：US20110147741A1

公开(公告)日：2011-06-23

申请号：US12972393

申请日：2010-12-17

申请人： Kwan-Wook Jung ,  Dong-Hyuk Kim

发明人： Kwan-Wook Jung ,  Dong-Hyuk Kim

IPC分类号： H01L31/119

CPC分类号： H01L31/022408 ,  H01L27/1461 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14663 ,  H01L27/14692 ,  H01L31/119

摘要： An X-ray detector constructed as an exemplary embodiment of the present invention includes a semiconductor layer, a data line including a source electrode covering a first portion of the semiconductor layer, a drain electrode disposed opposite to the source electrode, a first lower electrode formed on the upper portion of a second portion of the semiconductor layer and a gate insulating layer and elongated from the drain electrode, and a passivation layer formed on the upper portion of one part of the lower electrode including the drain electrode. Further, the second lower electrode is formed approaching the gate electrode. The X-ray detector constructed as the exemplary embodiment of the present invention includes a second lower electrode formed on the passivation layer and placed approaching a gate electrode. The area in which a diode is disposed may be maximized, and the amount of leakage current may be reduced.

摘要翻译： 作为本发明的示例性实施例构造的X射线检测器包括半导体层，包括覆盖半导体层的第一部分的源电极的数据线，与源电极相对设置的漏极，形成的第一下电极 在所述半导体层的第二部分的上部和栅极绝缘层上并且从所述漏极延伸，以及钝化层，形成在包括所述漏电极的所述下电极的一部分的上部。 此外，第二下电极形成为接近栅电极。 作为本发明的示例性实施例构造的X射线检测器包括形成在钝化层上并放置为接近栅电极的第二下电极。 设置二极管的区域可以最大化，并且可以减少泄漏电流的量。

公开(公告)号：US09208719B2

公开(公告)日：2015-12-08

申请号：US13206419

申请日：2011-08-09

申请人： Kwang-Hae Kim ,  Kwan-Wook Jung ,  Hun-Tae Kim

发明人： Kwang-Hae Kim ,  Kwan-Wook Jung ,  Hun-Tae Kim

IPC分类号： G09G3/32

CPC分类号： G09G3/3233 ,  G09G3/3266 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2310/062

摘要： A driving method of a display device is disclosed. According to one aspect, the method includes applying a first voltage of a predetermined level to an anode of a plurality of organic light emitting diodes (OLEDs) included in a plurality of pixels. A plurality of driving transistors are driven to be connected to the plurality of OLEDs. The method further includes transmitting a first power source voltage of a logic high level to the anode of the plurality of OLEDs as a threshold voltage to compensate a threshold voltage of the plurality of driving transistors, and applying a data voltage to a plurality of pixels as a data writing step turning on a plurality of driving transistors. The second power source voltage applied to the cathode of the plurality of OLEDs is changed to a second voltage of the logic low level in a state in which a plurality of driving transistors are turned on. In the turned on state, light is emitted from the plurality of OLEDs.

摘要翻译： 公开了一种显示装置的驱动方法。 根据一个方面，该方法包括将预定电平的第一电压施加到包括在多个像素中的多个有机发光二极管（OLED）的阳极。 多个驱动晶体管被驱动以连接到多个OLED。 该方法还包括将多个OLED的阳极的第一电源电压发送到多个OLED的阳极作为阈值电压，以补偿多个驱动晶体管的阈值电压，并将数据电压施加到多个像素 打开多个驱动晶体管的数据写入步骤。 在多个驱动晶体管导通的状态下，施加到多个OLED的阴极的第二电源电压被改变为逻辑低电平的第二电压。 在导通状态下，从多个OLED发出光。

公开(公告)号：US08897416B2

公开(公告)日：2014-11-25

申请号：US13155934

申请日：2011-06-08

申请人： Kwan-Wook Jung

发明人： Kwan-Wook Jung

IPC分类号： G01N23/04 ,  G01T1/20 ,  G03B42/02

CPC分类号： G01T1/2018 ,  G03B42/02

摘要： An, X-ray detector photographs an object by receiving an X-ray irradiated from an X-ray generator. The X-ray detector includes: a plurality of photo-detecting pixels, each of which includes a photodiode, which detects an X-ray and generates an electric signal corresponding to an amount of a transmitted X-ray, and a switching device which transmits the electric signal; a gate driver which supplies a gate pulse to the switching device for turning on the switching device; and a read-out integrated circuit (IC) which reads out the electric signals from the plurality of photo-detecting pixels; wherein the gate driver and the read-out IC initialize the plurality of photo-detecting pixels in response to an X-ray warm-up control signal causing warm up of the X-ray generator.

摘要翻译： X射线检测器通过接收从X射线发生器照射的X射线照射物体。 X射线检测器包括：多个光检测像素，每个光检测像素包括光电二极管，其检测X射线并产生对应于透射X射线量的电信号;以及透射 电信号; 栅极驱动器，其向所述开关器件提供用于接通所述开关器件的栅极脉冲; 和从多个光检测像素读出电信号的读出集成电路（IC）; 其中所述栅极驱动器和所述读出IC响应于引起所述X射线发生器预热的X射线预热控制信号来初始化所述多个光电检测像素。

公开(公告)号：US08895999B2

公开(公告)日：2014-11-25

申请号：US13469075

申请日：2012-05-10

申请人： Guang-Hai Jin ,  Jae-Beom Choi ,  Kwan-Wook Jung ,  June-Woo Lee ,  Moo-Jin Kim

发明人： Guang-Hai Jin ,  Jae-Beom Choi ,  Kwan-Wook Jung ,  June-Woo Lee ,  Moo-Jin Kim

IPC分类号： H01L33/00 ,  H01L33/08 ,  H01L33/38

CPC分类号： H01L33/08 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/326 ,  H01L33/38

摘要： A method of manufacturing an organic light-emitting display device is disclosed. The method includes: uniformly forming an active layer on an entire surface of a substrate on which an organic light-emitting diode, a thin film transistor (TFT), and a capacitor are to be formed; performing a first mask process on the active layer to form a pixel electrode of the organic light-emitting diode, a gate electrode of the TFT, and an upper electrode of the capacitor; performing a second mask process to form an insulating layer having openings that expose the pixel electrode, the upper electrode, and the active layer in a region of the TFT; performing a third mask process to form a source-drain electrode that contacts an exposed portion of the active layer; and performing a fourth mask process to form a pixel-defining layer (PDL) that exposes the pixel electrode and covers the TFT and the capacitor.

摘要翻译： 公开了一种制造有机发光显示装置的方法。 该方法包括：在要形成有机发光二极管，薄膜晶体管（TFT）和电容器的基板的整个表面上均匀地形成有源层; 在有源层上进行第一掩模处理以形成有机发光二极管的像素电极，TFT的栅电极和电容器的上电极; 执行第二掩模处理以形成具有在TFT的区域中暴露像素电极，上电极和有源层的开口的绝缘层; 执行第三掩模处理以形成接触有源层的暴露部分的源极 - 漏极电极; 以及执行第四掩模处理以形成曝光像素电极并覆盖TFT和电容器的像素限定层（PDL）。