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144 条记录 (耗时 0.03 秒)

    Bulk Separation of Carbon Nanotubes by Bandgap
    1.
    发明申请
    Bulk Separation of Carbon Nanotubes by Bandgap 有权
    通过带隙大量分离碳纳米管

    公开(公告)号：US20080260616A1

    公开(公告)日：2008-10-23

    申请号：US11572891

    申请日：2005-07-27

    申请人： James M. Tour ,  Christopher A. Dyke ,  Austen K. Flatt

    发明人： James M. Tour ,  Christopher A. Dyke ,  Austen K. Flatt

    IPC分类号： D01F9/12

    CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B32/172 ,  C01B32/174 ,  C01B2202/02 ,  C01B2202/04 ,  C01B2202/06 ,  C01B2202/22 ,  Y10S977/745 ,  Y10S977/748 ,  Y10S977/751 ,  Y10S977/845 ,  Y10S977/847

    摘要： The present invention is directed to methods of separating carbon nanotubes (CNTs) by their electronic type (e.g., metallic, semi-metallic, and semiconducting). Perhaps most generally, in some embodiments, the present invention is directed to methods of separating CNTs by bandgap, wherein such separation is effected by interacting the CNTs with a surface such that the surface interacts differentially with the CNTs on the basis of their bandgap, or lack thereof. In some embodiments, such methods can allow for such separations to be carried out in bulk quantities.

    摘要翻译： 本发明涉及通过其电子型（例如金属，半金属和半导体）分离碳纳米管（CNT）的方法。 也许最普遍地，在一些实施方案中，本发明涉及通过带隙分离CNT的方法，其中这种分离通过使CNT与表面相互作用来实现，使得表面基于它们的带隙与CNT差分地相互作用，或 缺乏。 在一些实施方案中，这种方法可以允许大量进行这种分离。

    Methods of attaching or grafting carbon nanotubes to silicon surfaces and composite structures derived therefrom
    2.
    发明授权
    Methods of attaching or grafting carbon nanotubes to silicon surfaces and composite structures derived therefrom 有权
    将碳纳米管附着或接枝到硅表面上的方法和由其衍生的复合结构

    公开(公告)号：US08158203B2

    公开(公告)日：2012-04-17

    申请号：US11579614

    申请日：2005-05-06

    申请人： James M. Tour ,  Bo Chen ,  Austen K. Flatt ,  Michael P. Stewart ,  Christopher A. Dyke ,  Francisco Maya

    发明人： James M. Tour ,  Bo Chen ,  Austen K. Flatt ,  Michael P. Stewart ,  Christopher A. Dyke ,  Francisco Maya

    IPC分类号： B05D3/10

    CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01L51/0048 ,  Y10S977/847 ,  Y10S977/892

    摘要： The present invention is directed toward methods of attaching or grafting carbon nanotubes (CNTs) to silicon surfaces. In some embodiments, such attaching or grafting occurs via functional groups on either or both of the CNTs and silicon surface. In some embodiments, the methods of the present invention include: (1) reacting a silicon surface with a functionalizing agent (such as oligo(phenylene ethynylene)) to form a functionalized silicon surface; (2) dispersing a quantity of CNTs in a solvent to form dispersed CNTs; and (3) reacting the functionalized silicon surface with the dispersed CNTs. The present invention is also directed to the novel compositions produced by such methods.

    摘要翻译： 本发明涉及将碳纳米管（CNT）附着或接枝到硅表面上的方法。 在一些实施方案中，这种附着或接枝通过CNT和硅表面中的任一个或两者上的官能团进行。 在一些实施方案中，本发明的方法包括：（1）使硅表面与官能化试剂（例如低聚（亚苯基亚乙炔基））反应以形成官能化的硅表面; （2）将一定数量的CNT分散在溶剂中以形成分散的CNT; 和（3）使功能化的硅表面与分散的CNT反应。 本发明还涉及通过这些方法制备的新型组合物。

    Bulk separation of carbon nanotubes by bandgap
    3.
    发明授权
    Bulk separation of carbon nanotubes by bandgap 有权
    通过带隙大量分离碳纳米管

    公开(公告)号：US07939047B2

    公开(公告)日：2011-05-10

    申请号：US11572891

    申请日：2005-07-27

    申请人： James M. Tour ,  Christopher A. Dyke ,  Austen K. Flatt

    发明人： James M. Tour ,  Christopher A. Dyke ,  Austen K. Flatt

    IPC分类号： C01B31/02

    CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B32/172 ,  C01B32/174 ,  C01B2202/02 ,  C01B2202/04 ,  C01B2202/06 ,  C01B2202/22 ,  Y10S977/745 ,  Y10S977/748 ,  Y10S977/751 ,  Y10S977/845 ,  Y10S977/847

    摘要： The present invention is directed to methods of separating carbon nanotubes (CNTs) by their electronic type (e.g., metallic, semi-metallic, and semiconducting). Perhaps most generally, in some embodiments, the present invention is directed to methods of separating CNTs by bandgap, wherein such separation is effected by interacting the CNTs with a surface such that the surface interacts differentially with the CNTs on the basis of their bandgap, or lack thereof. In some embodiments, such methods can allow for such separations to be carried out in bulk quantities.

    摘要翻译： 本发明涉及通过其电子型（例如金属，半金属和半导体）分离碳纳米管（CNT）的方法。 也许最普遍地，在一些实施方案中，本发明涉及通过带隙分离CNT的方法，其中这种分离通过使CNT与表面相互作用来实现，使得表面基于它们的带隙与CNT差分地相互作用，或 缺乏。 在一些实施方案中，这种方法可以允许大量进行这种分离。

    Carbon Nanotube-Silicon Composite Structures and Methods for Making Same
    4.
    发明申请
    Carbon Nanotube-Silicon Composite Structures and Methods for Making Same 有权
    碳纳米管 - 硅复合结构及其制备方法

    公开(公告)号：US20090042136A1

    公开(公告)日：2009-02-12

    申请号：US11579614

    申请日：2005-05-06

    申请人： James M. Tour ,  Bo Chen ,  Austen K. Flatt ,  Michael Stewart ,  Christopher A. Dyke ,  Francisco Maya

    发明人： James M. Tour ,  Bo Chen ,  Austen K. Flatt ,  Michael Stewart ,  Christopher A. Dyke ,  Francisco Maya

    IPC分类号： G03F7/20 ,  H01L21/44

    CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01L51/0048 ,  Y10S977/847 ,  Y10S977/892

    摘要： The present invention is directed toward methods of attaching or grafting carbon nanotubes (CNTs) to silicon or other surfaces, wherein such attaching or grafting occurs via functional groups on either or both of the CNTs and silicon surface. The present invention is also directed to the novel compositions produced by such methods. Previous work by Applicants has demonstrated covalent attachment of arenes via aryldiazonium salts to Si (hydride passivated single crystal or poly Si; or , p-doped, n-doped or intrinsic), GaAs, and Pd surfaces. In the case of Si, this provides a direct arene-Si bond with no intervening oxide. Applicants have also reported on the use of aryldiazonium salts for the direct covalent linkage of arenes to single wall carbon nanotubes (SWNTs) where the nanotubes can exist either as bundles or individual structures (when surfactant-wrapped). In some embodiments, the present invention is directed to a merger of these two technologies to afford the covalent attachment of individualized (unroped) SWNTs to Si surfaces.

    摘要翻译： 本发明涉及将碳纳米管（CNT）附着或接枝到硅或其它表面上的方法，其中通过碳纳米管和硅表面之一或两者上的官能团进行这种附着或接枝。 本发明还涉及通过这些方法制备的新型组合物。 申请人的以前的工作已经证明了芳烃通过芳基重氮盐与Si（氢化物钝化单晶或多晶硅; <111>或<100>，p掺杂，n掺杂或本征），GaAs和Pd表面共价连接。 在Si的情况下，这提供了没有中间氧化物的直接芳烃-Si键。 申请人还报导了芳基重氮盐用于将芳烃直接共价连接到单壁碳纳米管（SWNT）上，其中纳米管可以以束或单独的结构（当表面活性剂包裹时）存在。 在一些实施方案中，本发明涉及这两种技术的合并，以提供个体化（未经处理的）SWNT共价连接到Si表面。

    Metal-free silicon-molecule-nanotube testbed and memory device
    5.
    发明授权
    Metal-free silicon-molecule-nanotube testbed and memory device 失效
    无金属硅分子纳米管测试和记忆装置

    公开(公告)号：US07704323B2

    公开(公告)日：2010-04-27

    申请号：US11337456

    申请日：2006-01-23

    申请人： James M. Tour ,  Jianli He ,  Bo Chen ,  Austen K. Flatt ,  Jason J. Stephenson ,  Condell D. Doyle

    发明人： James M. Tour ,  Jianli He ,  Bo Chen ,  Austen K. Flatt ,  Jason J. Stephenson ,  Condell D. Doyle

    IPC分类号： C30B21/02

    CPC分类号： G11C13/02 ,  B82Y10/00 ,  B82Y30/00 ,  G11C13/0014 ,  G11C13/025 ,  H01L27/283 ,  H01L51/0048 ,  H01L51/005 ,  H01L51/0052 ,  H01L51/0595

    摘要： Work from several laboratories has shown that metal nanofilaments cause problems in some molecular electronics testbeds. A new testbed for exploring the electrical properties of single molecules has been developed to eliminate the possibility of metal nanofilament formation and to ensure that molecular effects are measured. This metal-free system uses single-crystal silicon and single-walled carbon nanotubes as electrodes for the molecular monolayer. A direct Si-arylcarbon grafting method is used. Use of this structure with π-conjugated organic molecules results in a hysteresis loop with current-voltage measurements that are useful for an electronic memory device. The memory is non-volatile for more than 3 days, non-destructive for more than 1,000 reading operations and capable of more than 1,000 write-erase cycles before device breakdown. Devices without π-conjugated molecules (Si—H surface only) or with long-chain alkyl-bearing molecules produced no hysteresis, indicating that the observed memory effect is molecularly relevant.

    摘要翻译： 几个实验室的工作表明，金属纳米丝在一些分子电子测试台中引起问题。 已经开发了用于探索单分子的电性质的新试验台，以消除金属纳米丝形成的可能性并确保测量分子效应。 该无金属系统使用单晶硅和单壁碳纳米管作为分子单层的电极。 使用直接的Si-芳基碳接枝方法。 这种结构与共轭有机分子的结合产生了对电子存储器件有用的电流 - 电压测量的滞后回路。 存储器非易失性超过3天，对于超过1,000次读取操作是非破坏性的，并且在器件故障之前能够进行超过1,000次写擦除周期。 不具有共轭分子（仅含Si-H表面）或具有长链烷基的分子的器件不产生滞后，表明观察到的记忆效应具有分子相关性。