Method for low temperature growth of inorganic materials from solution using catalyzed growth and re-growth
    9.
    发明申请
    Method for low temperature growth of inorganic materials from solution using catalyzed growth and re-growth 有权
    使用催化生长和再生长从溶液中低温生长无机材料的方法

    公开(公告)号:US20060135001A1

    公开(公告)日:2006-06-22

    申请号:US10535358

    申请日:2003-11-18

    IPC分类号: H01R11/09

    摘要: The present invention involves a method and apparatus for depositing a silicon oxide onto a substrate from solution at low temperatures in a manner that produces homogeneous growth of the silicon oxide. The method generally comprises the following steps: (a) Chemically treating a substrate to activate it for growth of the silicon oxide. (b) Immersing the treated substrate into a bath with a reactive solution. (c) Regenerating the reactive solution to allow for continued growth of the silicon oxide. In another embodiment of the present invention, the apparatus includes a first container holding a reactive solution, a substrate on which the silicon oxide is deposited, a second container holding silica, and a means for adding silica to the reactive solution.

    摘要翻译: 本发明涉及一种用于在氧化硅均匀生长的方式在低温下从溶液中沉积氧化硅到衬底上的方法和装置。 该方法通常包括以下步骤:(a)化学处理底物以使其活化以生长氧化硅。 (b)将经处理的基材浸入具有反应性溶液的浴中。 (c)再生反应溶液以允许氧化硅的持续生长。 在本发明的另一个实施方案中,该装置包括容纳反应性溶液的第一容器,沉积氧化硅的基底,保持二氧化硅的第二容器和用于向反应溶液中加入二氧化硅的装置。