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    Lateral diffusion field effect transistor with asymmetric gate dielectric profile
    2.
    发明授权
    Lateral diffusion field effect transistor with asymmetric gate dielectric profile 有权
    具有不对称栅极电介质轮廓的侧向扩散场效应晶体管

    公开(公告)号：US07829945B2

    公开(公告)日：2010-11-09

    申请号：US11924650

    申请日：2007-10-26

    申请人： James W. Adkisson ,  Natalie B. Feilchenfeld ,  Jeffrey P. Gambino ,  Benjamin T. Voegeli ,  Michael J. Zierak

    发明人： James W. Adkisson ,  Natalie B. Feilchenfeld ,  Jeffrey P. Gambino ,  Benjamin T. Voegeli ,  Michael J. Zierak

    IPC分类号： H01L21/331

    CPC分类号： H01L29/7835 ,  H01L29/1045 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/512 ,  H01L29/66659

    摘要： A gate stack comprising a uniform thickness gate dielectric, a gate electrode, and an oxygen-diffusion-resistant gate cap is formed on a semiconductor substrate. Thermal oxidation is performed only on the drain side of the gate electrode, while the source side is protected from thermal oxidation. A thermal oxide on the drain side sidewall of the gate electrode is integrally formed with a graded thickness silicon oxide containing gate dielectric, of which the thickness monotonically increases from the source side to the drain side. The thickness profile may be self-aligned to the drain side edge of the gate electrode, or may have a portion with a self-limiting thickness. The graded thickness profile may be advantageously used to form a lateral diffusion metal oxide semiconductor field effect transistor providing an enhanced performance.

    摘要翻译： 在半导体基板上形成包括均匀厚度的栅极电介质，栅电极和耐氧扩散栅极盖的栅极堆叠。 仅在栅电极的漏极侧进行热氧化，同时防止源极侧受热氧化。 栅电极的漏极侧壁上的热氧化物与层状厚度的含氧化硅的栅极电介质整体形成，其厚度从源极侧向漏极侧单调增加。 厚度分布可以与栅电极的漏极侧边缘自对准，或者可以具有自限制厚度的部分。 梯度厚度分布可以有利地用于形成提供增强性能的横向扩散金属氧化物半导体场效应晶体管。

    LATERAL DIFFUSION FIELD EFFECT TRANSISTOR WITH ASYMMETRIC GATE DIELECTRIC PROFILE
    4.
    发明申请
    LATERAL DIFFUSION FIELD EFFECT TRANSISTOR WITH ASYMMETRIC GATE DIELECTRIC PROFILE 有权
    具有不对称栅介质剖面的横向扩散场效应晶体管

    公开(公告)号：US20090108347A1

    公开(公告)日：2009-04-30

    申请号：US11924650

    申请日：2007-10-26

    申请人： James W. Adkisson ,  Natalie B. Feilchenfeld ,  Jeffrey P. Gambino ,  Benjamin T. Voegeli ,  Michael J. Zierak

    发明人： James W. Adkisson ,  Natalie B. Feilchenfeld ,  Jeffrey P. Gambino ,  Benjamin T. Voegeli ,  Michael J. Zierak

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7835 ,  H01L29/1045 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/512 ,  H01L29/66659

    摘要： A gate stack comprising a uniform thickness gate dielectric, a gate electrode, and an oxygen-diffusion-resistant gate cap is formed on a semiconductor substrate. Thermal oxidation is performed only on the drain side of the gate electrode, while the source side is protected from thermal oxidation. A thermal oxide on the drain side sidewall of the gate electrode is integrally formed with a graded thickness silicon oxide containing gate dielectric, of which the thickness monotonically increases from the source side to the drain side. The thickness profile may be self-aligned to the drain side edge of the gate electrode, or may have a portion with a self-limiting thickness. The graded thickness profile may be advantageously used to form a lateral diffusion metal oxide semiconductor field effect transistor providing an enhanced performance.

    摘要翻译： 在半导体基板上形成包括均匀厚度的栅极电介质，栅电极和耐氧扩散栅极盖的栅极堆叠。 仅在栅电极的漏极侧进行热氧化，同时防止源极侧受热氧化。 栅电极的漏极侧壁上的热氧化物与层状厚度的含氧化硅的栅极电介质整体形成，其厚度从源极侧向漏极侧单调增加。 厚度分布可以与栅电极的漏极侧边缘自对准，或者可以具有自限制厚度的部分。 梯度厚度分布可以有利地用于形成提供增强性能的横向扩散金属氧化物半导体场效应晶体管。

    Lateral diffusion field effect transistor with a trench field plate
    9.
    发明授权
    Lateral diffusion field effect transistor with a trench field plate 有权
    具有沟槽场板的横向扩散场效应晶体管

    公开(公告)号：US07956412B2

    公开(公告)日：2011-06-07

    申请号：US11950001

    申请日：2007-12-04

    申请人： Natalie B. Feilchenfeld ,  Jeffrey P. Gambino ,  Louis D. Lanzerotti ,  Benjamin T. Voegeli ,  Steven H. Voldman ,  Michael J. Zierak

    发明人： Natalie B. Feilchenfeld ,  Jeffrey P. Gambino ,  Louis D. Lanzerotti ,  Benjamin T. Voegeli ,  Steven H. Voldman ,  Michael J. Zierak

    IPC分类号： H01L29/417

    CPC分类号： H01L29/7825 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66681 ,  H01L29/66689 ,  H01L29/66704 ,  H01L29/7816

    摘要： A dielectric material layer is formed on a bottom surface and sidewalls of a trench in a semiconductor substrate. The silicon oxide layer forms a drift region dielectric on which a field plate is formed. Shallow trench isolation may be formed prior to formation of the drift region dielectric, or may be formed utilizing the same processing steps as the formation of the drift region dielectric. A gate dielectric layer is formed on exposed semiconductor surfaces and a gate conductor layer is formed on the gate dielectric layer and the drift region dielectric. The field plate may be electrically tied to the gate electrode, may be an independent electrode having an external bias, or may be a floating electrode. The field plate biases the drift region to enhance performance and extend allowable operating voltage of a lateral diffusion field effect transistor during operation.

    摘要翻译： 介电材料层形成在半导体衬底的沟槽的底表面和侧壁上。 氧化硅层形成漂移区电介质，在其上形成场板。 可以在形成漂移区电介质之前形成浅沟槽隔离，或者可以利用与形成漂移区电介质相同的处理步骤来形成。 在暴露的半导体表面上形成栅极电介质层，并且在栅极介电层和漂移区电介质上形成栅极导体层。 场板可以电连接到栅电极，可以是具有外部偏置的独立电极，或者可以是浮置电极。 场板偏置漂移区域以增强性能并且在操作期间延长横向扩散场效应晶体管的允许工作电压。

    LATERAL DIFFUSION FIELD EFFECT TRANSISTOR WITH A TRENCH FIELD PLATE
    10.
    发明申请
    LATERAL DIFFUSION FIELD EFFECT TRANSISTOR WITH A TRENCH FIELD PLATE 有权
    横向扩展场效应晶体管与TRENCH现场板

    公开(公告)号：US20090140343A1

    公开(公告)日：2009-06-04

    申请号：US11950001

    申请日：2007-12-04

    申请人： Natalie B. Feilchenfeld ,  Jeffrey P. Gambino ,  Louis D. Lanzerotti ,  Benjamin T. Voegeli ,  Steven H. Voldman ,  Michael J. Zierak

    发明人： Natalie B. Feilchenfeld ,  Jeffrey P. Gambino ,  Louis D. Lanzerotti ,  Benjamin T. Voegeli ,  Steven H. Voldman ,  Michael J. Zierak

    IPC分类号： H01L29/78 ,  H01L21/02

    CPC分类号： H01L29/7825 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66681 ,  H01L29/66689 ,  H01L29/66704 ,  H01L29/7816

    摘要： A dielectric material layer is formed on a bottom surface and sidewalls of a trench in a semiconductor substrate. The silicon oxide layer forms a drift region dielectric on which a field plate is formed. Shallow trench isolation may be formed prior to formation of the drift region dielectric, or may be formed utilizing the same processing steps as the formation of the drift region dielectric. A gate dielectric layer is formed on exposed semiconductor surfaces and a gate conductor layer is formed on the gate dielectric layer and the drift region dielectric. The field plate may be electrically tied to the gate electrode, may be an independent electrode having an external bias, or may be a floating electrode. The field plate biases the drift region to enhance performance and extend allowable operating voltage of a lateral diffusion field effect transistor during operation.

    摘要翻译： 介电材料层形成在半导体衬底的沟槽的底表面和侧壁上。 氧化硅层形成漂移区电介质，在其上形成场板。 可以在形成漂移区电介质之前形成浅沟槽隔离，或者可以利用与形成漂移区电介质相同的处理步骤来形成。 在暴露的半导体表面上形成栅极电介质层，并且在栅极介电层和漂移区电介质上形成栅极导体层。 场板可以电连接到栅电极，可以是具有外部偏置的独立电极，或者可以是浮置电极。 场板偏置漂移区域以增强性能并且在操作期间延长横向扩散场效应晶体管的允许工作电压。