公开(公告)号：US06291318B1

公开(公告)日：2001-09-18

申请号：US09412395

申请日：1999-10-05

Applicant: James Webb ,  Haipeng Tang

Inventor： James Webb ,  Haipeng Tang

IPC: H01L2176

CPC classification number: C30B23/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631

Abstract: A method of fabricating a gallium nitride or like epilayer on sapphire is disclosed wherein a buffer layer is grown on the sapphire substrate by magnetron sputter epitaxy (MSE); and then the gallium nitride epilayer is formed on the buffer layer, preferably by molecular beam epitaxy.

Abstract translation: 公开了一种在蓝宝石上制造氮化镓或类似外延层的方法，其中通过磁控溅射外延（MSE）在蓝宝石衬底上生长缓冲层; 然后优选通过分子束外延在缓冲层上形成氮化镓外延层。

公开(公告)号：USD1021571S1

公开(公告)日：2024-04-09

申请号：US29854604

申请日：2022-09-27

Applicant: Haipeng Tang

Designer： Haipeng Tang

Abstract: FIG. 1 is a top perspective view of a powder press, showing my new design;
FIG. 2 is a bottom perspective view thereof;
FIG. 3 is a front elevation view thereof, the rear elevation, the left side elevation view and the right side elevation view are identical;
FIG. 4 is a top plan view thereof;
FIG. 5 is a bottom plan view thereof; and,
FIG. 6 is a cross-sectional view along section line 6-6 of FIG. 3.
The broken lines in the figures are for the purposes of illustrating portions of the powder press, which form no part of the claimed design.

公开(公告)号：US06544867B1

公开(公告)日：2003-04-08

申请号：US09589756

申请日：2000-06-09

Applicant: James Brian Webb ,  Haipeng Tang

Inventor： James Brian Webb ,  Haipeng Tang

IPC: H01L2176

CPC classification number: C30B23/02 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631

Abstract: A method of growing semi-insulating GaN epilayers by ammonia-molecular beam epitaxy (MBE) through intentional doping with carbon is described. Thick GaN layers of high resistivity are an important element in GaN based heterostructure field-effect transistors. A methane ion source is preferably used as the carbon dopant source.

Abstract translation: 描述了通过氨分子束外延（MBE）生长半绝缘GaN外延层通过有意义的掺杂碳的方法。 GaN基异质结场效应晶体管的重要元素是高电阻厚GaN层。 甲烷离子源优选用作碳掺杂剂源。

公开(公告)号：US06599361B2

公开(公告)日：2003-07-29

申请号：US09882048

申请日：2001-06-18

Applicant: Haipeng Tang ,  James B. Webb ,  Jennifer A. Bardwell

Inventor： Haipeng Tang ,  James B. Webb ,  Jennifer A. Bardwell

IPC: C30B2300

CPC classification number: C30B23/02 ,  C30B29/403 ,  C30B29/406

Abstract: A method is described for selectively depositing a GaN epitaxial layer on a substrate. The substrate is first patterned with a seed layer, preferably of AlN, and then the GaN epitxial layer is grown on the resulting patterned substrate by molecular beam epitaxy (MBE) such that growth occurs selectively over the seed layer.