摘要:
An advanced control system for a photolithography tool that receives measurement data relating to inline parameters varying with position on a substrate surface. The position sensitive measurement data is used to establish a position dependent target offset for an exposure map, thereby effectively compensating for substrate non-uniformities. Since the inline measurement data is available significantly earlier in comparison to electrical measurement data of a completed circuit element, a more accurate exposure map may be obtained taking into account the process history of the substrates.
摘要:
Metrology data associated with a plurality of workpieces processed at a selected operation in the process flow including a plurality of operations is retrieved. A processing context associated with each of the workpieces is determined. The processing context identifies at least one previous tool used to perform an operation on the associated workpiece prior to the selected operation. A plurality of performance metrics is determined for a plurality of tools capable of performing the selected operation based on the metrology data. Each performance metric is associated with a particular tool and a particular processing context. A set of the performance metrics is identified for the plurality of tools having a processing context matching a processing context of a selected workpiece awaiting performance of the selected operation. The selected workpiece is dispatched for processing in a selected one of the plurality of tools based on the set of performance metrics.
摘要:
Metrology data associated with a plurality of workpieces processed at a selected operation in the process flow including a plurality of operations is retrieved. A processing context associated with each of the workpieces is determined. The processing context identifies at least one previous tool used to perform an operation on the associated workpiece prior to the selected operation. A plurality of performance metrics is determined for a plurality of tools capable of performing the selected operation based on the metrology data. Each performance metric is associated with a particular tool and a particular processing context. A set of the performance metrics is identified for the plurality of tools having a processing context matching a processing context of a selected workpiece awaiting performance of the selected operation. The selected workpiece is dispatched for processing in a selected one of the plurality of tools based on the set of performance metrics.
摘要:
A technique is disclosed that allows alignment of substrates on a run-to-run basis by using the position data of one or more previously aligned substrates to determine a setpoint of a pre-alignment process for one or more subsequent substrates. The setpoint may also be determined on the basis of a predefined characteristic of the substrates to be aligned.
摘要:
By taking into consideration the combination of the substrate holders in various lithography tools used during the imaging to two subsequent device layers, enhanced alignment accuracy may be accomplished. Furthermore, restrictive tool dedications for critical lithography processes may be significantly relaxed by providing specific overlay correction data for each possible process flow, wherein, in some illustrative embodiments, a restriction of the number of possible process flows may be accomplished by implementing a rule for selecting a predefined substrate holder when starting the processing of an associated group of substrates.
摘要:
By automatically estimating the focus status of individual substrates or lots on the basis of focus-specific tool information obtained from the exposure tool, such as tilt angle ranges used during the automatic focusing procedures, possible hot spot errors may be detected highly efficiently prior to releasing the substrates to a subsequent etch process. Consequently, yield losses may be reduced. Moreover, possible error sources for hot spot errors may be identified.
摘要:
By taking into consideration the combination of the substrate holders in various lithography tools used during the imaging to two subsequent device layers, enhanced alignment accuracy may be accomplished. Furthermore, restrictive tool dedications for critical lithography processes may be significantly relaxed by providing specific overlay correction data for each possible process flow, wherein, in some illustrative embodiments, a restriction of the number of possible process flows may be accomplished by implementing a rule for selecting a predefined substrate holder when starting the processing of an associated group of substrates.
摘要:
By taking into consideration tool-specific distortion signatures and reticle-specific placement characteristics in an alignment control system, the control quality of sophisticated APC strategies may be significantly enhanced. Respective correction data may be established on the basis of any combinations of tool/reticles and layers to be aligned to each other, which may modify the respective target values of alignment parameters used for controlling the alignment process on the basis of standard overlay measurement data obtained from dedicated overlay marks.
摘要:
By taking into consideration tool-specific distortion signatures and reticle-specific placement characteristics in an alignment control system, the control quality of sophisticated APC strategies may be significantly enhanced. Respective correction data may be established on the basis of any combinations of tool/reticles and layers to be aligned to each other, which may modify the respective target values of alignment parameters used for controlling the alignment process on the basis of standard overlay measurement data obtained from dedicated overlay marks.
摘要:
A controller and a method of controlling a process tool is provided, in which machine constants used for calibrating manipulated variables of the control algorithm are explicitly introduced into the process model, thereby providing an enhanced controller behavior immediately after the introduction of new measurement values of the machine constants.