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    Copper sputtering targets and methods of forming copper sputtering targets
    2.
    发明授权
    Copper sputtering targets and methods of forming copper sputtering targets 有权
    铜溅射靶和形成铜溅射靶的方法

    公开(公告)号：US07767043B2

    公开(公告)日：2010-08-03

    申请号：US12235427

    申请日：2008-09-22

    申请人： Vladimir M. Segal ,  Wuwen Yi ,  Stephane Ferrasse ,  Chi tse Wu ,  Susan D. Strothers ,  Frank A. Alford ,  William B. Willett

    发明人： Vladimir M. Segal ,  Wuwen Yi ,  Stephane Ferrasse ,  Chi tse Wu ,  Susan D. Strothers ,  Frank A. Alford ,  William B. Willett

    IPC分类号： B22D17/00 ,  C22F1/08 ,  C22C14/00

    CPC分类号： C23C14/3414 ,  B21C23/001

    摘要： The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.

    摘要翻译： 本发明包括含铜溅射靶。 目标是整体或结合的，并且含有至少99.99重量％的铜，并且具有1微米至50微米的平均粒度。 包含铜的靶具有大于或等于约15ksi的屈服强度和大于约40的布氏硬度（HB）。本发明包括基本上由小于或等于约 99.99重量％的铜，合金元素的总量为至少100ppm且小于10重量％。 靶具有小于1微米至50微米的平均粒度，并且在整个靶上具有小于约15％标准偏差（1-sigma）的粒度不均匀性。 本发明还包括生产粘结和单片铜和铜合金靶的方法。

    Copper Sputtering Targets and Methods of Forming Copper Sputtering Targets
    3.
    发明申请
    Copper Sputtering Targets and Methods of Forming Copper Sputtering Targets 有权
    铜溅射靶和形成铜溅射靶的方法

    公开(公告)号：US20090020192A1

    公开(公告)日：2009-01-22

    申请号：US12235427

    申请日：2008-09-22

    申请人： Vladimir M. Segal ,  Wuwen Yi ,  Stephane Ferrasse ,  Chi tse Wu ,  Susan D. Strothers ,  Frank A. Alford ,  William B. Willett

    发明人： Vladimir M. Segal ,  Wuwen Yi ,  Stephane Ferrasse ,  Chi tse Wu ,  Susan D. Strothers ,  Frank A. Alford ,  William B. Willett

    IPC分类号： C22F1/08

    CPC分类号： C23C14/3414 ,  B21C23/001

    摘要： The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.

    摘要翻译： 本发明包括含铜溅射靶。 目标是整体或结合的，并且含有至少99.99重量％的铜，并且具有1微米至50微米的平均粒度。 包含铜的靶具有大于或等于约15ksi的屈服强度和大于约40的布氏硬度（HB）。本发明包括铜合金整体和结合的溅射靶，其基本上由小于或等于约 99.99重量％的铜，合金元素的总量为至少100ppm且小于10重量％。 靶具有小于1微米至50微米的平均粒度，并且在整个靶上具有小于约15％标准偏差（1-sigma）的粒度不均匀性。 本发明还包括生产粘结和单片铜和铜合金靶的方法。

    Copper Sputtering Targets and Methods of Forming Copper Sputtering Targets
    4.
    发明申请
    Copper Sputtering Targets and Methods of Forming Copper Sputtering Targets 有权
    铜溅射靶和形成铜溅射靶的方法

    公开(公告)号：US20100059147A9

    公开(公告)日：2010-03-11

    申请号：US12235427

    申请日：2008-09-22

    申请人： Vladimir M. Segal ,  Wuwen Yi ,  Stephane Ferrasse ,  Chi tse Wu ,  Susan D. Strothers ,  Frank A. Alford ,  William B. Willett

    发明人： Vladimir M. Segal ,  Wuwen Yi ,  Stephane Ferrasse ,  Chi tse Wu ,  Susan D. Strothers ,  Frank A. Alford ,  William B. Willett

    IPC分类号： C22F1/08

    CPC分类号： C23C14/3414 ,  B21C23/001

    摘要： The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.

    摘要翻译： 本发明包括含铜溅射靶。 目标是整体或结合的，并且含有至少99.99重量％的铜，并且具有1微米至50微米的平均粒度。 包含铜的靶具有大于或等于约15ksi的屈服强度和大于约40的布氏硬度（HB）。本发明包括基本上由小于或等于约 99.99重量％的铜，合金元素的总量为至少100ppm且小于10重量％。 靶具有小于1微米至50微米的平均粒度，并且在整个靶上具有小于约15％标准偏差（1-sigma）的粒度不均匀性。 本发明还包括生产粘结和单片铜和铜合金靶的方法。

    Novel manufacturing design and processing methods and apparatus for PVD targets
    6.
    发明申请
    Novel manufacturing design and processing methods and apparatus for PVD targets 审中-公开
    PVD目标的新型制造设计和加工方法和设备

    公开(公告)号：US20080041720A1

    公开(公告)日：2008-02-21

    申请号：US11504130

    申请日：2006-08-14

    申请人： Jaeyeon Kim ,  Susan D. Strothers ,  Ira G. Nolander

    发明人： Jaeyeon Kim ,  Susan D. Strothers ,  Ira G. Nolander

    IPC分类号： C23C14/00

    CPC分类号： C23C14/3407 ,  H01J37/3414 ,  H01J37/3435

    摘要： Methods for producing PVD sputtering targets comprising extended sidewalls are described that include: a) bonding a surface material to a core material to produce a rough part; b) forming the rough part; and in some embodiments, c) utilizing at least one machining step to form the target. In addition, methods for producing PVD sputtering targets comprising extended sidewalls are described herein that include: a) concurrently bonding a surface material to a core material to produce a rough part and forming the rough part; and in some embodiments, b) utilizing at least one machining step to form the target. PVD sputtering targets and related apparatus formed by and utilizing these methods are also described herein.

    摘要翻译： 描述了用于制造包括延伸侧壁的PVD溅射靶的方法，其包括：a）将表面材料粘结到芯材以产生粗糙部分; b）形成粗糙部分; 并且在一些实施例中，c）利用至少一个加工步骤来形成所述靶。 另外，本文描述了用于制造包括延伸侧壁的PVD溅射靶的方法，其包括：a）将表面材料同时粘合到芯材以产生粗糙部分并形成粗糙部分; 并且在一些实施例中，b）利用至少一个加工步骤来形成所述目标。 本文还描述了通过并利用这些方法形成的PVD溅射靶和相关装置。

    COPPER PHYSICAL VAPOR DEPOSITION TARGETS AND METHODS OF MAKING COPPER PHYSICAL VAPOR DEPOSITION TARGETS
    7.
    发明申请
    COPPER PHYSICAL VAPOR DEPOSITION TARGETS AND METHODS OF MAKING COPPER PHYSICAL VAPOR DEPOSITION TARGETS 审中-公开
    铜物理蒸气沉积目标和制备铜物理蒸气沉积目标的方法

    公开(公告)号：US20090101496A1

    公开(公告)日：2009-04-23

    申请号：US12336935

    申请日：2008-12-17

    申请人： Wuwen Yi ,  Susan D. Strothers

    发明人： Wuwen Yi ,  Susan D. Strothers

    IPC分类号： C23C30/00

    CPC分类号： C23C14/3414 ,  C22C9/00

    摘要： The invention includes physical vapor deposition targets formed of copper material and having an average grain size of less than 50 microns and an absence of course-grain areas throughout the target. The invention encompasses a physical vapor deposition target, of a copper material and having an average grain size of less than 50 microns with a grain size standard deviation of fess than 5% (1−σ) throughout the target. The copper material is selected from copper alloys and high-purity copper material containing greater than or equal to 99.9999% copper, by weight. The invention includes methods of forming copper physical vapor deposition targets. An as-cast copper material is subjected to a multistage processing. Each stage of the multistage processing includes a heating event, a hot-forging event, and a water quenching event. After the multistage processing the copper material is roiled to produce a target blank.

    摘要翻译： 本发明包括由铜材料形成并且具有小于50微米的平均晶粒尺寸并且整个靶材上不存在过程晶粒区域的物理气相沉积靶。 本发明包括铜材料的物理气相沉积靶，其平均粒度小于50微米，整个靶材的晶粒尺寸标准偏差不超过5％（1-σ）。 铜材料选自铜合金和含有大于或等于99.9999重量％铜的高纯度铜材料。 本发明包括形成铜物理气相沉积靶的方法。 铸造铜材料经受多级处理。 多级处理的每个阶段包括加热事件，热锻事件和水淬事件。 在多级处理之后，铜材料被卷成以产生目标坯料。

    SPUTTERING TARGETS COMPRISING A NOVEL MANUFACTURING DESIGN, METHODS OF PRODUCTION AND USES THEREOF
    8.
    发明申请
    SPUTTERING TARGETS COMPRISING A NOVEL MANUFACTURING DESIGN, METHODS OF PRODUCTION AND USES THEREOF 审中-公开
    包含新型制造设计的飞溅目标，生产方法及其用途

    公开(公告)号：US20090065354A1

    公开(公告)日：2009-03-12

    申请号：US11854064

    申请日：2007-09-12

    申请人： Janine K. Kardokus ,  Susan D. Strothers ,  Brett Clark ,  Ira G. Nolander ,  Florence A. Baldwin ,  Jianxing Li

    发明人： Janine K. Kardokus ,  Susan D. Strothers ,  Brett Clark ,  Ira G. Nolander ,  Florence A. Baldwin ,  Jianxing Li

    IPC分类号： C23C14/00 ,  B22D21/00 ,  B22D27/00 ,  G01N23/00 ,  C22C21/12 ,  C22C9/01

    CPC分类号： C22C9/01 ,  B22D21/007 ,  B22D21/025 ,  C22C21/12 ,  C23C14/3414

    摘要： A sputtering target is described herein, which includes: a) a surface material, and b) a core material coupled to the surface material, wherein at least one of the surface material or the core material has less than 100 ppm defect volume. Methods for producing sputtering targets are described that include: a) providing at least one sputtering target material, b) melting the at least one sputtering target material to provide a molten material, c) degassing the molten material, d) pouring the molten material into a target mold. In some embodiments, pouring the molten material into a target mold comprises under-pouring or under-skimming the molten material from the crucible into the target mold. Sputtering targets and related apparatus formed by and utilizing these methods are also described herein. In addition, uses of these sputtering targets are described herein.

    摘要翻译： 本文描述了溅射靶，其包括：a）表面材料，以及b）与表面材料耦合的芯材料，其中至少一个表面材料或芯材料具有小于100ppm的缺陷体积。 描述了生产溅射靶的方法，包括：a）提供至少一种溅射靶材料，b）熔化至少一种溅射靶材料以提供熔融材料，c）使熔融材料脱气，d）将熔融材料倒入 目标模具。 在一些实施例中，将熔融材料注入到目标模具中包括将熔融材料从坩埚倒入或低于目标模具。 本文还描述了通过和利用这些方法形成的溅射靶和相关装置。 此外，这里描述了这些溅射靶的用途。

    Novel manufacturing design and processing methods and apparatus for sputtering targets
    9.
    发明申请
    Novel manufacturing design and processing methods and apparatus for sputtering targets 审中-公开
    用于溅射靶的新型制造设计和加工方法和装置

    公开(公告)号：US20080110746A1

    公开(公告)日：2008-05-15

    申请号：US11595658

    申请日：2006-11-09

    申请人： Janine K. Kardokus ,  Werner Hort ,  Susan D. Strothers ,  Christie J. Hausman ,  Kevin T. Hubert ,  Diana Morales ,  Michael D. Payton

    发明人： Janine K. Kardokus ,  Werner Hort ,  Susan D. Strothers ,  Christie J. Hausman ,  Kevin T. Hubert ,  Diana Morales ,  Michael D. Payton

    IPC分类号： C23C14/00

    CPC分类号： C23C14/3414

    摘要： Sputtering targets having reduced burn-in times are described herein that include: a) a machine-finished surface material having an average grain size, and b) a core material having an average grain size, wherein the machine-finished surface material has an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material. Sputtering targets having reduced burn-in times are described herein that include: a surface material, and a core material, wherein at least one of the surface material or the core material comprises a relatively band-free crystallographic orientation. In addition, methods of producing sputtering targets having reduced burn-in times include: providing a surface material having at least some residual surface damage, providing a core material, coupling the surface material to the core material, and machine-finishing the surface material to an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material. Also, methods of producing sputtering targets having reduced burn-in times include: providing a surface material combined with a core material, wherein the surface material has at least some residual surface damage and machine-finishing the surface material to an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material.

    摘要翻译： 本文描述了具有减少的老化时间的溅射靶，其包括：a）具有平均晶粒尺寸的机加工的表面材料，以及b）具有平均晶粒尺寸的芯材，其中机加工表面材料具有平均 表面粗糙度（Ra）等于或小于表面材料或芯材中至少一种的平均晶粒尺寸。 本文描述了具有减少的老化时间的溅射靶，其包括：表面材料和芯材料，其中至少一个表面材料或芯材料包含相对无带的结晶取向。 此外，生产具有减少的老化时间的溅射靶的方法包括：提供具有至少一些残余表面损伤的表面材料，提供芯材料，将表面材料耦合到芯材料，以及将表面材料机加工成 平均表面粗糙度（Ra）等于或小于表面材料或芯材中至少一种的平均晶粒尺寸。 此外，生产具有减少的烧成时间的溅射靶的方法包括：提供与芯材组合的表面材料，其中表面材料具有至少一些残余表面损伤并将表面材料机加工成平均表面粗糙度（Ra ）等于或小于表面材料或芯材料中的至少一种的平均晶粒尺寸。