公开(公告)号：US06541320B2

公开(公告)日：2003-04-01

申请号：US09928210

申请日：2001-08-10

申请人： Jeffrey Brown ,  Richard Wise ,  Hongwen Yan ,  Qingyun Yang ,  Chienfan Yu

发明人： Jeffrey Brown ,  Richard Wise ,  Hongwen Yan ,  Qingyun Yang ,  Chienfan Yu

IPC分类号： H01L21336

CPC分类号： H01L21/32137 ,  H01L21/28114 ,  H01L21/32139 ,  H01L21/82385 ,  H01L29/42376

摘要： A method and structure for forming a notched gate structure having a gate conductor layer on a gate dielectric layer. The gate conductor layer has a first thickness. The inventive method includes patterning a mask over the gate conductor layer, etching the gate conductor layer in regions not protected by the mask to a reduced thickness, (the reduced thickness being less than the first thickness), depositing a passivating film over the gate conductor layer, etching the passivating film to remove the passivating film from horizontal portions of the gate conductor layer (using an anisotropic etch), selectively etching the gate conductor layer to remove the gate conductor layer from all regions not protected by the mask or the passivating film. This forms undercut notches within the gate conductor layer at corner locations where the gate conductor meets the gate dielectric layer. The passivating film comprises a C-containing film, a Si-containing film, a Si—C-containing film or combinations thereof.

摘要翻译： 一种用于形成在栅极介电层上具有栅极导体层的缺口栅极结构的方法和结构。 栅极导体层具有第一厚度。 本发明的方法包括在栅极导体层上图案化掩模，在未被掩模保护的区域中将栅极导体层蚀刻到减小的厚度（减小的厚度小于第一厚度），在栅极导体上沉积钝化膜 蚀刻钝化膜以从栅极导体层的水平部分去除钝化膜（使用各向异性蚀刻），选择性地蚀刻栅极导体层以从不受掩模或钝化膜保护的所有区域去除栅极导体层 。 这在栅极导体与栅极介电层相遇的拐角处形成栅极导体层内的底切凹口。 钝化膜包括含C的膜，含Si膜，含Si-C的膜或其组合。

公开(公告)号：US20120142181A1

公开(公告)日：2012-06-07

申请号：US13369707

申请日：2012-02-09

申请人： Tze-Chiang Chen ,  Meikei Ieong ,  Rajarao Jammy ,  Mukesh V. Khare ,  Chun-yung Sung ,  Richard Wise ,  Hongwen Yan ,  Ying Zhang

发明人： Tze-Chiang Chen ,  Meikei Ieong ,  Rajarao Jammy ,  Mukesh V. Khare ,  Chun-yung Sung ,  Richard Wise ,  Hongwen Yan ,  Ying Zhang

IPC分类号： H01L21/28

CPC分类号： H01L21/28079 ,  H01L21/823807 ,  H01L21/823842 ,  H01L21/823878 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/045 ,  H01L29/6659

摘要： Methods for fabricating a CMOS structure use a first gate stack located over a first orientation region of a semiconductor substrate. A second gate material layer is located over the first gate stack and a laterally adjacent second orientation region of the semiconductor substrate. A planarizing layer is located upon the second gate material layer. The planarizing layer and the second gate material layer are non-selectively etched to form a second gate stack that approximates the height of the first gate stack. An etch stop layer may also be formed upon the first gate stack. The resulting CMOS structure may comprise different gate dielectrics, metal gates and silicon gates.

摘要翻译： 制造CMOS结构的方法使用位于半导体衬底的第一取向区域上方的第一栅极堆叠。 第二栅极材料层位于第一栅极叠层上方和半导体衬底的横向相邻的第二取向区域上。 平坦化层位于第二栅极材料层上。 平面化层和第二栅极材料层被非选择性蚀刻以形成近似第一栅极堆叠的高度的第二栅极堆叠。 也可以在第一栅极叠层上形成蚀刻停止层。 所得到的CMOS结构可以包括不同的栅极电介质，金属栅极和硅栅极。

公开(公告)号：US08158481B2

公开(公告)日：2012-04-17

申请号：US12683535

申请日：2010-01-07

申请人： Tze-Chiang Chen ,  Meikei Ieong ,  Rajarao Jammy ,  Mukesh V. Khare ,  Chun-yung Sung ,  Richard Wise ,  Hongwen Yan ,  Ying Zhang

发明人： Tze-Chiang Chen ,  Meikei Ieong ,  Rajarao Jammy ,  Mukesh V. Khare ,  Chun-yung Sung ,  Richard Wise ,  Hongwen Yan ,  Ying Zhang

IPC分类号： H01L21/8234

CPC分类号： H01L21/28079 ,  H01L21/823807 ,  H01L21/823842 ,  H01L21/823878 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/045 ,  H01L29/6659

摘要： Methods for fabricating a CMOS structure use a first gate stack located over a first orientation region of a semiconductor substrate. A second gate material layer is located over the first gate stack and a laterally adjacent second orientation region of the semiconductor substrate. A planarizing layer is located upon the second gate material layer. The planarizing layer and the second gate material layer are non-selectively etched to form a second gate stack that approximates the height of the first gate stack. An etch stop layer may also be formed upon the first gate stack. The resulting CMOS structure may comprise different gate dielectrics, metal gates and silicon gates.

摘要翻译： 制造CMOS结构的方法使用位于半导体衬底的第一取向区域上方的第一栅极堆叠。 第二栅极材料层位于第一栅极叠层上方和半导体衬底的横向相邻的第二取向区域上。 平坦化层位于第二栅极材料层上。 平面化层和第二栅极材料层被非选择性蚀刻以形成近似第一栅极堆叠的高度的第二栅极堆叠。 也可以在第一栅极叠层上形成蚀刻停止层。 所得到的CMOS结构可以包括不同的栅极电介质，金属栅极和硅栅极。

公开(公告)号：US20070278586A1

公开(公告)日：2007-12-06

申请号：US11444011

申请日：2006-05-31

申请人： Tze-Chiang Chen ,  Meikei Ieong ,  Rajarao Jammy ,  Mukesh Khare ,  Chun-yung Sung ,  Richard Wise ,  Hongwen Yan ,  Ying Zhang

发明人： Tze-Chiang Chen ,  Meikei Ieong ,  Rajarao Jammy ,  Mukesh Khare ,  Chun-yung Sung ,  Richard Wise ,  Hongwen Yan ,  Ying Zhang

IPC分类号： H01L29/94

CPC分类号： H01L21/28079 ,  H01L21/823807 ,  H01L21/823842 ,  H01L21/823878 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/045 ,  H01L29/6659

摘要： Methods for fabricating a CMOS structure use a first gate stack located over a first orientation region of a semiconductor substrate. A second gate material layer is located over the first gate stack and a laterally adjacent second orientation region of the semiconductor substrate. A planarizing layer is located upon the second gate material layer. The planarizing layer and the second gate material layer are non-selectively etched to form a second gate stack that approximates the height of the first gate stack. An etch stop layer may also be formed upon the first gate stack. The resulting CMOS structure may comprise different gate dielectrics, metal gates and silicon gates.

摘要翻译： 制造CMOS结构的方法使用位于半导体衬底的第一取向区域上方的第一栅极堆叠。 第二栅极材料层位于第一栅极叠层上方和半导体衬底的横向相邻的第二取向区域上。 平坦化层位于第二栅极材料层上。 平面化层和第二栅极材料层被非选择性蚀刻以形成近似第一栅极堆叠的高度的第二栅极堆叠。 也可以在第一栅极叠层上形成蚀刻停止层。 所得到的CMOS结构可以包括不同的栅极电介质，金属栅极和硅栅极。

公开(公告)号：US20050239284A1

公开(公告)日：2005-10-27

申请号：US10709204

申请日：2004-04-21

申请人： Richard Wise ,  Bomy Chen ,  Mark Hakey ,  Hongwen Yan

发明人： Richard Wise ,  Bomy Chen ,  Mark Hakey ,  Hongwen Yan

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L23/53295 ,  H01L2221/1057 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a wiring structure for an integrated circuit includes the steps of forming a plurality of features in a layer of dielectric material, and forming spacers on sidewalls of the features. Conductors are then formed in the features, being separated from the sidewalls by the spacers. The spacers are then removed, forming air gaps at the sidewalls so that the conductors are separated from the sidewalls by the air gaps. Dielectric layers above and below the conductors may be low-k dielectrics having a dielectric constant less than that of the dielectric between the conductors. A cross-section of each of the conductors has a bottom in contact with the a low-k dielectric layer, a top in contact with another low-k dielectric, and sides in contact only with the air gaps. The air gaps serve to reduce the intralevel capacitance.

摘要翻译： 形成用于集成电路的布线结构的方法包括以下步骤：在介电材料层中形成多个特征，以及在特征的侧壁上形成间隔物。 然后在特征中形成导体，通过间隔件与侧壁分离。 然后去除间隔物，在侧壁处形成气隙，使得导体通过气隙与侧壁分离。 导体之上和之下的介电层可以是具有比导体之间的电介质的介电常数小的介电常数的低k电介质。 每个导体的横截面具有与低k电介质层接触的底部，与另一低k电介质接触的顶部和仅与气隙接触的侧面。 气隙用于降低电容值。

公开(公告)号：US08785281B2

公开(公告)日：2014-07-22

申请号：US13369707

申请日：2012-02-09

申请人： Tze-Chiang Chen ,  Meikei Ieong ,  Rajarao Jammy ,  Mukesh V. Khare ,  Chun-yung Sung ,  Richard Wise ,  Hongwen Yan ,  Ying Zhang

发明人： Tze-Chiang Chen ,  Meikei Ieong ,  Rajarao Jammy ,  Mukesh V. Khare ,  Chun-yung Sung ,  Richard Wise ,  Hongwen Yan ,  Ying Zhang

IPC分类号： H01L21/8234

CPC分类号： H01L21/28079 ,  H01L21/823807 ,  H01L21/823842 ,  H01L21/823878 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/045 ,  H01L29/6659

摘要： Methods for fabricating a CMOS structure use a first gate stack located over a first orientation region of a semiconductor substrate. A second gate material layer is located over the first gate stack and a laterally adjacent second orientation region of the semiconductor substrate. A planarizing layer is located upon the second gate material layer. The planarizing layer and the second gate material layer are non-selectively etched to form a second gate stack that approximates the height of the first gate stack. An etch stop layer may also be formed upon the first gate stack. The resulting CMOS structure may comprise different gate dielectrics, metal gates and silicon gates.

摘要翻译： 制造CMOS结构的方法使用位于半导体衬底的第一取向区域上方的第一栅极堆叠。 第二栅极材料层位于第一栅极叠层上方和半导体衬底的横向相邻的第二取向区域上。 平坦化层位于第二栅极材料层上。 平面化层和第二栅极材料层被非选择性蚀刻以形成近似第一栅极堆叠的高度的第二栅极堆叠。 也可以在第一栅极叠层上形成蚀刻停止层。 所得到的CMOS结构可以包括不同的栅极电介质，金属栅极和硅栅极。

公开(公告)号：US20130043559A1

公开(公告)日：2013-02-21

申请号：US13211570

申请日：2011-08-17

申请人： JUNEDONG LEE ,  Xi Li ,  Paul C. Parries ,  Richard Wise ,  Hongwen Yan

发明人： JUNEDONG LEE ,  Xi Li ,  Paul C. Parries ,  Richard Wise ,  Hongwen Yan

IPC分类号： H01L21/20 ,  H01L29/92 ,  H01L21/28

CPC分类号： H01L29/66181 ,  H01L21/3065 ,  H01L21/3081

摘要： A method includes removing an exposed portion of a first portion of a substrate to define a first trench portion partially defined by the first portion of the substrate and expose a second portion of the substrate, the first portion of the substrate disposed on the second portion of the substrate, the second portion of the substrate including an N+ doped silicon material, and removing a portion the exposed second portion of the substrate with an isotropic etching process to define a second trench portion.

摘要翻译： 一种方法包括去除衬底的第一部分的暴露部分以限定部分地由衬底的第一部分限定并且暴露衬底的第二部分的第一沟槽部分，衬底的第一部分设置在衬底的第二部分上 衬底，衬底的第二部分包括N +掺杂的硅材料，并且用各向同性蚀刻工艺去除衬底的暴露的第二部分的一部分以限定第二沟槽部分。

公开(公告)号：US20060037940A1

公开(公告)日：2006-02-23

申请号：US11260375

申请日：2005-10-28

申请人： Hongwen Yan ,  Brian Ji ,  Siddhartha Panda ,  Richard Wise ,  Bomy Chen

发明人： Hongwen Yan ,  Brian Ji ,  Siddhartha Panda ,  Richard Wise ,  Bomy Chen

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32623 ,  H01J37/3266

摘要： A plasma etching system having a wafer chuck with a magnet that applies a magnetic field over a wafer to shield the wafer from charged particles. The magnetic field is parallel with the wafer, and is strongest near the wafer surface. The magnetic field may be straight, or circular. In operation, electrons are deflected from the wafer by the Lorentz force, the wafer acquires a positive charge, and ions are deflected by electrostatic repulsion. Neutral species are allowed through the magnetic field, and they collide with the wafer. Neutral species generally provide more isotropic and material-selective etching than charged particles, so the present magnetic field tends to increase etch isotropy and material selectivity. Also, the magnetic field can protect the wafer from seasoning processes designed to clean unwanted films from the chamber surface as seasoning processes typically rely on etching by charged particles.

摘要翻译： 一种等离子体蚀刻系统，其具有带有磁体的晶片卡盘，该磁体在晶片上施加磁场以将晶片免受带电粒子的影响。 磁场与晶片平行，并且在晶片表面附近最强。 磁场可以是直的或圆形的。 在操作中，电子通过洛伦兹力从晶片偏转，晶片获得正电荷，离子被静电排斥偏转。 允许中性物质通过磁场，并且它们与晶片碰撞。 中性物质通常提供比带电粒子更多的各向同性和材料选择性蚀刻，因此目前的磁场倾向于增加蚀刻各向同性和材料选择性。 此外，由于调味过程通常依赖于带电粒子的蚀刻，所以磁场可以保护晶片免受调节过程的调节过程，以便从室表面清洁不需要的膜。

公开(公告)号：US07671421B2

公开(公告)日：2010-03-02

申请号：US11444011

申请日：2006-05-31

申请人： Tze-Chiang Chen ,  Meikei Ieong ,  Rajarao Jammy ,  Mukesh V. Khare ,  Chun-yung Sung ,  Richard Wise ,  Hongwen Yan ,  Ying Zhang

发明人： Tze-Chiang Chen ,  Meikei Ieong ,  Rajarao Jammy ,  Mukesh V. Khare ,  Chun-yung Sung ,  Richard Wise ,  Hongwen Yan ,  Ying Zhang

IPC分类号： H01L21/00

CPC分类号： H01L21/28079 ,  H01L21/823807 ,  H01L21/823842 ,  H01L21/823878 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/045 ,  H01L29/6659

摘要： Methods for fabricating a CMOS structure use a first gate stack located over a first orientation region of a semiconductor substrate. A second gate material layer is located over the first gate stack and a laterally adjacent second orientation region of the semiconductor substrate. A planarizing layer is located upon the second gate material layer. The planarizing layer and the second gate material layer are non-selectively etched to form a second gate stack that approximates the height of the first gate stack. An etch stop layer may also be formed upon the first gate stack. The resulting CMOS structure may comprise different gate dielectrics, metal gates and silicon gates.

摘要翻译： 制造CMOS结构的方法使用位于半导体衬底的第一取向区域上方的第一栅极堆叠。 第二栅极材料层位于第一栅极叠层上方和半导体衬底的横向相邻的第二取向区域上。 平坦化层位于第二栅极材料层上。 平面化层和第二栅极材料层被非选择性蚀刻以形成近似第一栅极堆叠的高度的第二栅极堆叠。 也可以在第一栅极叠层上形成蚀刻停止层。 所得到的CMOS结构可以包括不同的栅极电介质，金属栅极和硅栅极。

公开(公告)号：US20050260819A1

公开(公告)日：2005-11-24

申请号：US10709652

申请日：2004-05-20

申请人： Michael Belyansky ,  Joyce Liu ,  Hsing Jen Wann ,  Richard Wise ,  Hongwen Yan

发明人： Michael Belyansky ,  Joyce Liu ,  Hsing Jen Wann ,  Richard Wise ,  Hongwen Yan

IPC分类号： H01L21/316 ,  H01L21/336 ,  H01L21/4763 ,  H01L27/088 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： An FET transistor has a gate disposed between a source and a drain; a gate dielectric layer disposed underneath the gate; and a spacer on a side of the gate. The gate dielectric layer is conventional oxide and the spacer has a reduced dielectric constant (k). The reduced dielectric constant (k) may be less than 3.85, or it may be less than 7.0 (˜nitride), but greater than 3.85 (˜oxide). Preferably, the spacer comprises a material which can be etched selectively to the gate dielectric layer. The spacer may be porous, and a thin layer is deposited on the porous spacer to prevent moisture absorption. The spacer may comprise a material selected from the group consisting of Black Diamond, Coral, TERA and Blok type materials. Pores may be formed in the spacer material by exposing the spacers to an oxygen plasma.

摘要翻译： FET晶体管具有设置在源极和漏极之间的栅极; 设置在栅极下方的栅介质层; 和在门侧的间隔物。 栅极电介质层是常规的氧化物，间隔物具有降低的介电常数（k）。 降低的介电常数（k）可以小于3.85，或者可以小于7.0（〜氮化物），但大于3.85（〜氧化物）。 优选地，间隔物包括可以选择性地蚀刻到栅极介电层的材料。 间隔物可以是多孔的，并且在多孔间隔物上沉积薄层以防止吸湿。 间隔物可以包括选自黑钻石，珊瑚，TERA和Blok型材料的材料。 可以通过将间隔物暴露于氧等离子体来在间隔物材料中形成孔。