Tunable-gain lasing semiconductor optical amplifier
    1.
    发明授权
    Tunable-gain lasing semiconductor optical amplifier 有权
    可调谐增益激光半导体光放大器

    公开(公告)号:US06445495B1

    公开(公告)日:2002-09-03

    申请号:US09273813

    申请日:1999-03-22

    IPC分类号: H01S318

    摘要: A tunable-gain lasing semiconductor optical amplifier comprises a vertical-lasing semiconductor optical amplifier that includes a tunable region which allows the gain of the vertical-lasing semiconductor optical amplifier to be tuned. The tunable region comprises a region whose loss and/or phase may be tuned by adjusting a physical characteristic of the region. For example, the region may comprise a liquid crystal layer whose transmissivity may be adjusted by applying different voltages across the layer to adjust the reflectivity of a cavity mirror, or a cavity mirror whose reflectivity may be adjusted by ion implantation. In an alternative embodiment of this invention, the tunable-gain lasing semiconductor optical amplifier comprises a tunable loss element in series after the gain-clamped semiconductor optical amplifier.

    摘要翻译: 可调增益激光半导体光放大器包括垂直激光半导体光放大器,其包括允许垂直激光半导体光放大器的增益被调谐的可调谐区域。 可调谐区域包括可以通过调整该区域的物理特性来调整其损耗和/或相位的区域。 例如,该区域可以包括液晶层,其透射率可以通过跨层施加不同的电压来调节,以调节空腔反射镜的反射率,或者可以通过离子注入调整其反射率的腔镜。 在本发明的替代实施例中,可调增益激光半导体光放大器包括在增益钳位半导体光放大器之后串联的可调损耗元件。

    Low-noise, high-power optical amplifier
    3.
    发明授权
    Low-noise, high-power optical amplifier 有权
    低噪声,高功率光放大器

    公开(公告)号:US06512629B1

    公开(公告)日:2003-01-28

    申请号:US09416817

    申请日:1999-10-12

    IPC分类号: H01S300

    摘要: A multi-stage lasing semiconductor optical amplifier (SOA) device amplifies an optical signal. The multi-stage SOA includes at least two SOA stages coupled in series. Each SOA stage includes a semiconductor gain medium and a laser cavity including the semiconductor gain medium. The medium is pumped above a lasing threshold for the laser cavity, which clamps the gain of the medium. An optical signal propagating through the medium is amplified by the gain-clamped medium. The SOA stages are characterized by a design parameter which varies from stage to stage. In a preferred embodiment, the design parameter includes a noise figure and a saturable power, with both parameters increasing as the optical signal propagates from stage to stage. As a result, the multi-stage SOA can achieve better noise performance and higher power outputs compared to comparable SOAs of constant noise figure and saturable power.

    摘要翻译: 多阶段激光半导体光放大器(SOA)器件放大光信号。 多级SOA包括至少两个串联耦合的SOA阶段。 每个SOA阶段包括半导体增益介质和包括半导体增益介质的激光腔。 介质被泵送在激光腔的激光阈值之上,其夹持介质的增益。 通过介质传播的光信号被增益钳位介质放大。 SOA阶段的特征在于从阶段到阶段都不同的设计参数。 在优选实施例中,设计参数包括噪声系数和可饱和功率,随着光信号从舞台传播到舞台,两个参数都增加。 因此,与具有恒定噪声系数和可饱和能力的可比较SOA相比,多级SOA可以实现更好的噪声性能和更高的功率输出。

    Optical signal power monitor and regulator
    4.
    发明授权
    Optical signal power monitor and regulator 有权
    光信号功率监视器和调节器

    公开(公告)号:US06347104B1

    公开(公告)日:2002-02-12

    申请号:US09299824

    申请日:1999-04-26

    IPC分类号: H01S300

    摘要: An optical signal power monitor and regulator comprises: a lasing semiconductor optical amplifier for receiving the optical signal and whose laser output is used to monitor a power level of the optical signal; a monitor circuit which receives the laser output and outputs a monitoring signal; a tunable element for receiving a version of the optical signal and whose level of amplification is adjustable and for outputting an amplified optical signal; and a regulator circuit for receiving the monitoring signal and adjusting the amplification of the tunable optical amplifier depending upon the monitoring signal. The tunable element may comprise a tunable gain-clamped semiconductor optical amplifier. Such an embodiment is capable of automatically regulating the tunable element such that a power level of the amplified optical signal is kept stable. In addition, the monitor circuit may be used to send status information regarding the optical signal to a network management system, which in turn may send to the regulator circuit a managing signal affecting the level of amplification to be applied to the optical signal.

    摘要翻译: 光信号功率监视器和调节器包括:用于接收光信号的激光半导体光放大器,其激光输出用于监视光信号的功率电平; 接收激光输出并输出监视信号的监视电路; 用于接收光信号的版本并且其放大级别可调并用于输出放大的光信号的可调谐元件; 以及调节电路,用于根据监视信号接收监视信号并调整可调谐光放大器的放大。 可调元件可以包括可调增益钳位半导体光放大器。 这样的实施例能够自动调节可调元件,使得放大的光信号的功率电平保持稳定。 此外,监视电路可以用于向网络管理系统发送关于光信号的状态信息,网络管理系统又可以向调节器电路发送影响要施加到光信号的放大电平的管理信号。

    Low-noise, high-power optical amplifier
    5.
    发明授权
    Low-noise, high-power optical amplifier 失效
    低噪声,高功率光放大器

    公开(公告)号:US06704138B2

    公开(公告)日:2004-03-09

    申请号:US10300439

    申请日:2002-11-19

    IPC分类号: H01S506

    摘要: A multi-stage lasing semiconductor optical amplifier (SOA) device amplifies an optical signal. The multi-stage SOA includes at least two SOA stages coupled in series. Each SOA stage includes a semiconductor gain medium and a laser cavity including the semiconductor gain medium. The medium is pumped above a lasing threshold for the laser cavity, which clamps the gain of the medium. An optical signal propagating through the medium is amplified by the gain-clamped medium. The SOA stages are characterized by a design parameter which varies from stage to stage. In a preferred embodiment, the design parameter includes a noise figure and a saturable power, with both parameters increasing as the optical signal propagates from stage to stage. As a result, the multi-stage SOA can achieve better noise performance and higher power outputs compared to comparable SOAs of constant noise figure and saturable power.

    摘要翻译: 多级激光半导体光放大器(SOA)器件放大光信号。 多级SOA包括至少两个串联耦合的SOA阶段。 每个SOA阶段包括半导体增益介质和包括半导体增益介质的激光腔。 介质被泵送在激光腔的激光阈值之上,其夹持介质的增益。 通过介质传播的光信号被增益钳位介质放大。 SOA阶段的特征在于从阶段到阶段都不同的设计参数。 在优选实施例中,设计参数包括噪声系数和可饱和功率,随着光信号从舞台传播到舞台,两个参数都增加。 因此,与具有恒定噪声系数和可饱和能力的可比较SOA相比,多级SOA可以实现更好的噪声性能和更高的功率输出。

    Optical signal power monitor and regulator

    公开(公告)号:US06577654B1

    公开(公告)日:2003-06-10

    申请号:US10033550

    申请日:2001-12-27

    IPC分类号: H01S310

    摘要: An optical signal power monitor and regulator comprises: a lasing semiconductor optical amplifier for receiving the optical signal and whose laser output is used to monitor a power level of the optical signal; a monitor circuit which receives the laser output and outputs a monitoring signal; a tunable element for receiving a version of the optical signal and whose level of amplification is adjustable and for outputting an amplified optical signal; and a regulator circuit for receiving the monitoring signal and adjusting the amplification of the tunable optical amplifier depending upon the monitoring signal. The tunable element may comprise a tunable gain-clamped semiconductor optical amplifier. Such an embodiment is capable of automatically regulating the tunable element such that a power level of the amplified optical signal is kept stable. In addition, the monitor circuit may be used to send status information regarding the optical signal to a network management system, which in turn may send to the regulator circuit a managing signal affecting the level of amplification to be applied to the optical signal.

    Polarization insensitive semiconductor optical amplifier

    公开(公告)号:US06549331B2

    公开(公告)日:2003-04-15

    申请号:US09956175

    申请日:2001-09-18

    IPC分类号: H01S300

    CPC分类号: H01S5/5009 H01S5/1085

    摘要: An optical amplifier module that is insensitive to polarization comprises a first fiber, a second fiber, a semiconductor optical amplifier (SOA), and a polarization dependent loss (PDL) unit. The first fiber provides for optical input to the SOA. The SOA amplifies the optical signal received and outputs the amplified signal. The output of the SOA is optically coupled to the PDL unit. The PDL unit provides polarization dependent loss and the loss is preferably selected to match the polarization dependent gain of the SOA such that when two are coupled there is no overall polarization dependence. The output of the PDL is optically coupled to the fiber for transmission output. The present invention also comprises a method for manufacturing an optical amplifier module that comprises the steps of: determining the polarization dependent gain of an SOA, determining the polarization dependent loss of a plurality of PDL units, selecting a PDL unit such that the polarization dependent loss when coupled to the SOA is reduced, and packaging the SOA and the PDL unit as an optical amplifier module.

    Thermally robust semiconductor optical amplifiers and laser diodes
    8.
    发明授权
    Thermally robust semiconductor optical amplifiers and laser diodes 失效
    耐热半导体光放大器和激光二极管

    公开(公告)号:US06347106B1

    公开(公告)日:2002-02-12

    申请号:US09257288

    申请日:1999-02-25

    IPC分类号: H01S5223

    摘要: A highly heat conductive layer is combined with or placed in the vicinity of the optical waveguide region of active semiconductor components. The thermally conductive layer enhances the conduction of heat away from the active region, which is where the heat is generated in active semiconductor components. This layer is placed so close to the optical region that it must also function as a waveguide and causes the active region to be nearly the same temperature as the ambient or heat sink. However, the semiconductor material itself should be as temperature insensitive as possible and therefore the invention combines a highly thermally conductive dielectric layer with improved semiconductor materials to achieve an overall package that offers improved thermal performance. The highly thermally conductive layer serves two basic functions. First, it provides a lower index material than the semiconductor device so that certain kinds of optical waveguides may be formed, e.g., a ridge waveguide. The second and most important function, as it relates to this invention, is that it provides a significantly higher thermal conductivity than the semiconductor material, which is the principal material in the fabrication of various optoelectronic devices.

    摘要翻译: 高导热层与有源半导体元件的光波导区域结合或放置在有源半导体元件的光波导区域附近。 导热层增强了远离有源区域的热传导,这是在有源半导体部件中产生热量的地方。 该层被放置得如此靠近光学区域,其也必须用作波导并且使有源区域与环境或散热器几乎相同的温度。 然而,半导体材料本身应当尽可能不敏感,因此本发明将高导热介电层与改进的半导体材料组合以实现提供改进的热性能的整体封装。 高导热层具有两个基本功能。 首先,它提供比半导体器件更低的折射率材料,使得可以形成某些种类的光波导,例如脊形波导。 与本发明相关的第二和最重要的功能是提供比半导体材料显着更高的热导率,半导体材料是制造各种光电器件的主要材料。

    Polarization insensitive semiconductor optical amplifier
    9.
    发明授权
    Polarization insensitive semiconductor optical amplifier 有权
    极化不敏感的半导体光放大器

    公开(公告)号:US06310720B1

    公开(公告)日:2001-10-30

    申请号:US09585587

    申请日:2000-06-02

    IPC分类号: H01S300

    CPC分类号: H01S5/5009 H01S5/1085

    摘要: An optical amplifier module that is insensitive to polarization comprises a first fiber, a second fiber, a semiconductor optical amplifier (SOA), and a polarization dependent loss (PDL) unit. The first fiber provides for optical input to the SOA. The SOA amplifies the optical signal received and outputs the amplified signal. The output of the SOA is optically coupled to the unit. The PDL unit provides polarization dependent loss and the loss is preferably selected to match the polarization dependent gain of the SOA such that when two are coupled there is no overall polarization dependence. The output of the PDL is optically coupled to the fiber for transmission output. The present invention also comprises a method for manufacturing an optical amplifier module that comprises the steps of: determining the polarization dependent gain of an SOA, determining the polarization dependent loss of a plurality of PDL units, selecting a PDL unit such that the polarization dependent loss when coupled to the SOA is reduced, and packaging the SOA and the PDL unit as an optical amplifier module.

    摘要翻译: 对偏振不敏感的光放大器模块包括第一光纤,第二光纤,半导体光放大器(SOA)和偏振相关损耗(PDL)单元。 第一个光纤提供了对SOA的光输入。 SOA放大所接收的光信号并输出​​放大的信号。 SOA的输出光耦合到该单元。 PDL单元提供偏振相关损耗,并且优选地选择损耗以匹配SOA的偏振相关增益,使得当两个耦合时不存在总体偏振依赖性。 PDL的输出光纤耦合到光纤以用于传输输出。 本发明还包括一种用于制造光放大器模块的方法,其包括以下步骤:确定SOA的偏振相关增益,确定多个PDL单元的偏振相关损耗,选择PDL单元,使得偏振相关损耗 当耦合到SOA被减少时,并将SOA和PDL单元封装成光放大器模块。

    Fabrication of precision high quality facets on molecular beam epitaxy material
    10.
    发明授权
    Fabrication of precision high quality facets on molecular beam epitaxy material 失效
    在分子束外延材料上制造精密高品质的小面

    公开(公告)号:US06204189B1

    公开(公告)日:2001-03-20

    申请号:US09239631

    申请日:1999-01-29

    IPC分类号: H01L21302

    摘要: Fabricating mirrored vertical surfaces on semiconductor layered material grown by molecular beam epitaxy (MBE). Low energy chemically assisted ion beam etching (CAIBE) is employed to prepare mirrored vertical surfaces on MBE-grown III-V materials under unusually low concentrations of oxygen in evacuated etching atmospheres of chlorine and xenon ion beams. UV-stabilized smooth-surfaced photoresist materials contribute to highly vertical, high quality mirrored surfaces during the etching.

    摘要翻译: 通过分子束外延(MBE)生长的半导体层状材料上制造镜像垂直表面。 采用低能量化学辅助离子束蚀刻(CAIBE),在真空低浓度的氧气在氯和氙离子束的真空蚀刻气氛中,在MBE生长的III-V材料上准备镜像垂直表面。 UV稳定的光滑表面光刻胶材料在蚀刻期间有助于高度垂直,高质量的镜面。