公开(公告)号：US20080166297A1

公开(公告)日：2008-07-10

申请号：US11720572

申请日：2005-12-01

申请人： Jei-Man Ryu ,  Dong-Hyuk Shin ,  Seung-Kyoo Seong ,  Hee-Bog Yang ,  Young-Jun Song ,  Eun-Jung Bae ,  Kyung-Bae Park ,  Byung-Chul Shin

发明人： Jei-Man Ryu ,  Dong-Hyuk Shin ,  Seung-Kyoo Seong ,  Hee-Bog Yang ,  Young-Jun Song ,  Eun-Jung Bae ,  Kyung-Bae Park ,  Byung-Chul Shin

IPC分类号： A61K51/04 ,  C07F5/00

CPC分类号： A61K51/06 ,  A61K31/22 ,  A61K51/1213

摘要： The present invention relates to a radionuclide-chitosan complex solution and its preparation method, and more particularly to the radionuclide-chitosan complex solution having a viscosity of 300˜2,400 cps, comprising an aqueous chitosan solution or a freeze-dried chitosan labeled with a radionuclide. The radionuclide-chitosan complex solution according to the present invention has a stable gelation state at a target region when injected into the body while maintaining a labeling yield of radioisotope to chitosan above 99%. Side effects may be minimized and treatment efficiency may be increased when injected to a patient.

摘要翻译： 本发明涉及放射性核素 - 壳聚糖复合溶液及其制备方法，更具体地涉及粘度为300〜2400cps的放射性核素 - 壳聚糖复合溶液，其包含壳聚糖水溶液或用放射性核素标记的冷冻干燥壳聚糖 。 本发明的放射性核素 - 壳聚糖复合溶液在注射到体内时在靶区域具有稳定的凝胶化状态，同时保持壳聚糖的放射性同位素的标记收率高于99％。 副作用可能最小化，并且当注射到患者时可以增加治疗效率。

公开(公告)号：US20060286032A1

公开(公告)日：2006-12-21

申请号：US10570295

申请日：2004-09-08

申请人： Jei-Man Ryu ,  Dong-Hyuk Shin ,  Seung-Kyoo Seong ,  Hee-Bog Yang ,  Eun-Jung Bae ,  Young-Jun Song ,  Kyung-Bae Park ,  Byung-Chul Shin

发明人： Jei-Man Ryu ,  Dong-Hyuk Shin ,  Seung-Kyoo Seong ,  Hee-Bog Yang ,  Eun-Jung Bae ,  Young-Jun Song ,  Kyung-Bae Park ,  Byung-Chul Shin

IPC分类号： A61K51/00 ,  C08B37/08

CPC分类号： A61K51/06 ,  A61K51/1282

摘要： Disclosed is a composition for treating prostate cancer. The composition for treating prostate cancer comprises as an effective ingredient a radioisotope-chitosan complex that includes a therapeutic radioisotope emitting beta radiation and chitosan. Also, the present invention discloses a kit for preparing the composition. When directly administered to a prostate cancer tissue, the radioisotope- chitosan complex is deposited in the applied target site while not leaking from the applied target site, and strongly inhibits the growth of prostate cancer cells while minimizing the side effects of conventional therapies, including urinary incontinence, urethral stricture and rectal bleeding. In addition, the radioisotope-chitosan complex may be used as an effective therapeutic agent for hormone-independent prostate cancer that is resistant to hormone therapy.

摘要翻译： 公开了用于治疗前列腺癌的组合物。 用于治疗前列腺癌的组合物包括放射性同位素 - 壳聚糖复合物作为有效成分，其包括发射β辐射和壳聚糖的治疗性放射性同位素。 此外，本发明公开了一种用于制备组合物的试剂盒。 当直接施用于前列腺癌组织时，放射性同位素 - 壳聚糖复合物沉积在施用的靶位点，而不会从施用的靶位点泄漏，并强烈地抑制前列腺癌细胞的生长，同时最小化常规治疗的副作用，包括尿 尿失禁，尿道狭窄和直肠出血。 此外，放射性同位素 - 壳聚糖复合物可用作对激素治疗具有抗性的激素非依赖性前列腺癌的有效治疗剂。

公开(公告)号：US20080031811A1

公开(公告)日：2008-02-07

申请号：US11575170

申请日：2005-09-12

申请人： Jei-Man Ryu ,  Yu-Eun Kim ,  Seung-Kyoo Seong ,  Dong-Hyuk Shin ,  Byung-Ho Cho ,  Young-Jun Song ,  Kyung-Bae Park ,  Byung-Chul Shin

发明人： Jei-Man Ryu ,  Yu-Eun Kim ,  Seung-Kyoo Seong ,  Dong-Hyuk Shin ,  Byung-Ho Cho ,  Young-Jun Song ,  Kyung-Bae Park ,  Byung-Chul Shin

IPC分类号： A61K51/12 ,  A61M36/14

CPC分类号： A61K51/1279 ,  C08J5/18 ,  C08J2375/04 ,  C08K3/16 ,  C08K3/28

摘要： The present invention relates to a method for preparing a radioactive film for local radioactive treatment. More particularly, the present invention relates to a method for preparing a radioactive film comprising the steps of; dissolving 0.1˜14.5 weight % of a stable nuclide and 13˜32.5 weight % of a film-forming base for the total amount of a solvent in the solvent; applying a stable nuclide solution on a release paper by a coater and drying; and irradiating a stable nuclide film with neutrons in a nuclear reactor. A method for preparing a radioactive film according to the present invention provides a radioactive film having a uniform distribution of radionuclides and an even thickness. Therefore, the therapeutic efficacy of the radioactive film for selective treatment of a lesion may be maximized by attaching the radioactive film on a patient's skin or a mucous membrane and by direct radioactive radiation.

摘要翻译： 本发明涉及一种用于局部放射性处理的放射性膜的制备方法。 更具体地，本发明涉及一种制备放射性膜的方法，包括以下步骤： 将0.1〜14.5重量％的稳定核素和13〜32.5重量％的成膜基质溶解在溶剂中的溶剂的总量; 通过涂布机将稳定的核素溶液施加在剥离纸上并干燥; 并在核反应堆中用中子照射稳定的核素膜。 根据本发明的制备放射性膜的方法提供了具有均匀分布的放射性核素的均匀厚度的放射性膜。 因此，通过将放射性膜附着在患者的皮肤或粘膜上以及通过直接的放射性辐射，用于选择性治疗病变的放射性膜的治疗功效可以最大化。

公开(公告)号：US20110233539A1

公开(公告)日：2011-09-29

申请号：US13064466

申请日：2011-03-28

申请人： Jong-Baek Seon ,  Myung-Kwan Ryu ,  Kyung-Bae Park ,  Sang-Yoon Lee ,  Bon-Won Koo

发明人： Jong-Baek Seon ,  Myung-Kwan Ryu ,  Kyung-Bae Park ,  Sang-Yoon Lee ,  Bon-Won Koo

IPC分类号： H01L29/02 ,  H01L21/20 ,  B32B9/00 ,  B32B7/02

CPC分类号： H01L29/12 ,  H01L31/1884 ,  Y02E10/50 ,  Y10T428/24975

摘要： Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing the oxide thin film, the methods including (A) applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, (B) heat-treating the oxide precursor solution to form an oxide layer, and (C) repeating the steps (A) and (B) to form a plurality of the oxide layers.

摘要翻译： 氧化物薄膜，包括氧化物薄膜的电子器件和制造氧化物薄膜的方法，包括（A）应用包含锌（Zn），铟（In）和锡（Sn）中的至少一种的氧化物前体溶液的方法， （B）对氧化物前体溶液进行热处理以形成氧化物层，（C）重复步骤（A）和（B）以形成多个氧化物层。

公开(公告)号：US07662678B2

公开(公告)日：2010-02-16

申请号：US11473067

申请日：2006-06-23

申请人： Wenxu Xianyu ,  Hans S. Cho ,  Takashi Noguchi ,  Young-Soo Park ,  Xiaoxin Zhang ,  Huaxiang Yin ,  Hyuck Lim ,  Kyung-Bae Park ,  Suk-Pil Kim

发明人： Wenxu Xianyu ,  Hans S. Cho ,  Takashi Noguchi ,  Young-Soo Park ,  Xiaoxin Zhang ,  Huaxiang Yin ,  Hyuck Lim ,  Kyung-Bae Park ,  Suk-Pil Kim

IPC分类号： H01L21/00 ,  H01L29/76

CPC分类号： C30B29/06 ,  Y10T428/10

摘要： Provided are methods of forming a more highly-oriented silicon thin layer having a larger grain size, and a substrate having the same. The methods may include forming an aluminum (Al) layer on a base substrate, forming a more highly-oriented Al layer by recrystallizing the Al layer under vacuum, forming a more highly-oriented γ-Al2O3 layer on the more highly-oriented Al layer and/or epitaxially growing a silicon layer on the more highly-oriented γ-Al2O3 layer. The method may be used to manufacture a semiconductor device having higher carrier mobility.

摘要翻译： 提供了形成具有较大晶粒尺寸的更高取向硅薄层的方法以及具有其的基板。 所述方法可以包括在基底上形成铝（Al）层，通过在真空下重结晶Al层形成更高取向的Al层，在更高取向的Al层上形成更高取向的γ-Al 2 O 3层 和/或在更高取向的γ-Al 2 O 3层上外延生长硅层。 该方法可用于制造具有较高载流子迁移率的半导体器件。

公开(公告)号：US09564531B2

公开(公告)日：2017-02-07

申请号：US13064366

申请日：2011-03-22

申请人： Kyung-Bae Park ,  Myung-Kwan Ryu ,  Jong-Baek Seon ,  Sang-Yoon Lee ,  Bon-Won Koo

发明人： Kyung-Bae Park ,  Myung-Kwan Ryu ,  Jong-Baek Seon ,  Sang-Yoon Lee ,  Bon-Won Koo

IPC分类号： H01L29/786 ,  H01L29/49

CPC分类号： H01L29/7869 ,  H01L29/4908

摘要： Thin film transistors including a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the semiconductor channel and a gate electrode wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, and at least one metal of the second metal oxide is the same as at least one metal of the first metal oxide, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors.

摘要翻译： 薄膜晶体管，包括设置在漏电极和源电极之间的半导体沟道; 以及栅极绝缘层，其设置在所述半导体沟道和栅电极之间，其中所述半导体沟道包括第一金属氧化物，所述栅极绝缘层包括第二金属氧化物，并且所述第二金属氧化物的至少一种金属至少与 第一金属氧化物的一种金属，薄膜晶体管的制造方法以及包括薄膜晶体管的半导体器件。

公开(公告)号：US08394668B2

公开(公告)日：2013-03-12

申请号：US13064466

申请日：2011-03-28

申请人： Jong-Baek Seon ,  Myung-Kwan Ryu ,  Kyung-Bae Park ,  Sang-Yoon Lee ,  Bon-Won Koo

发明人： Jong-Baek Seon ,  Myung-Kwan Ryu ,  Kyung-Bae Park ,  Sang-Yoon Lee ,  Bon-Won Koo

IPC分类号： H01L21/00

CPC分类号： H01L29/12 ,  H01L31/1884 ,  Y02E10/50 ,  Y10T428/24975

摘要： Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing the oxide thin film, the methods including (A) applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, (B) heat-treating the oxide precursor solution to form an oxide layer, and (C) repeating the steps (A) and (B) to form a plurality of the oxide layers.

公开(公告)号：US08319300B2

公开(公告)日：2012-11-27

申请号：US12662292

申请日：2010-04-09

申请人： Jong-Baek Seon ,  Hyun-Jae Kim ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Hyun-Soo Shin ,  Kyung-Bae Park ,  Woong-Hee Jeong ,  Gun-hee Kim ,  Byung-Du Ahn

发明人： Jong-Baek Seon ,  Hyun-Jae Kim ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Hyun-Soo Shin ,  Kyung-Bae Park ,  Woong-Hee Jeong ,  Gun-hee Kim ,  Byung-Du Ahn

IPC分类号： H01L27/14

CPC分类号： H01L29/7869

摘要： A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.

摘要翻译： 用于形成氧化物薄膜的溶液组合物可以包括包含锌的第一化合物，包括铟的第二化合物和包含镁或铪的第三化合物，并且电子器件可以包括包含锌，铟和镁的氧化物半导体。 锌和铪可以以约1:0.01至约1:1的原子比包括在内。

公开(公告)号：US20100258793A1

公开(公告)日：2010-10-14

申请号：US12662292

申请日：2010-04-09

申请人： Jong-Baek Seon ,  Hyun-Jae Kim ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Hyun-Soo Shin ,  Kyung-Bae Park ,  Woong-Hee Jeong ,  Gun-Hee Kim ,  Byung-Du Ahn

发明人： Jong-Baek Seon ,  Hyun-Jae Kim ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Hyun-Soo Shin ,  Kyung-Bae Park ,  Woong-Hee Jeong ,  Gun-Hee Kim ,  Byung-Du Ahn

IPC分类号： H01L29/786 ,  H01B1/02 ,  H01B1/12 ,  H01B1/22

CPC分类号： H01L29/7869

摘要： A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.

摘要翻译： 用于形成氧化物薄膜的溶液组合物可以包括包含锌的第一化合物，包括铟的第二化合物和包含镁或铪的第三化合物，并且电子器件可以包括包含锌，铟和镁的氧化物半导体。 锌和铪可以以约1:0.01至约1:1的原子比包括在内。

公开(公告)号：US20090206332A1

公开(公告)日：2009-08-20

申请号：US12320701

申请日：2009-02-02

申请人： Kyoung-Seok Son ,  Tae-Sang Kim ,  Jang-Yeon Kwon ,  Ji-Sim Jung ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Kyung-Bae Park ,  Byung-Wook Yoo

发明人： Kyoung-Seok Son ,  Tae-Sang Kim ,  Jang-Yeon Kwon ,  Ji-Sim Jung ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Kyung-Bae Park ,  Byung-Wook Yoo

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78648

摘要： An oxide semiconductor thin film transistor (TFT) and a method of manufacturing the oxide semiconductor TFT. The oxide semiconductor TFT includes a first gate insulating layer arranged between an oxide semiconductor channel layer and a first gate and a second gate insulating layer arranged between the channel layer and a second gate. The first and second gate insulating layers are made out of different materials and have different thicknesses. Preferably, the second gate insulating layer is silicon oxide and is thinner than the first gate insulating layer which is preferably silicon nitride. Oxide semiconductor refers to an oxide material such as Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide, In—Sn Oxide, and one of Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide and In—Sn Oxide.

摘要翻译： 氧化物半导体薄膜晶体管（TFT）及其制造方法。 氧化物半导体TFT包括布置在氧化物半导体沟道层和第一栅极之间的第一栅极绝缘层和布置在沟道层和第二栅极之间的第二栅极绝缘层。 第一和第二栅极绝缘层由不同的材料制成并且具有不同的厚度。 优选地，第二栅极绝缘层是氧化硅并且比优选为氮化硅的第一栅极绝缘层更薄。 氧化物半导体是指氧化锌，氧化锡，Ga-In-Zn氧化物，In-Zn氧化物，In-Sn氧化物，氧化锌，氧化锡，Ga-In-Zn氧化物，In- 氧化锌和氧化铟锡。