TRANSPARENT SMART LIGHT SOURCE CAPABLE OF ADJUSTING ILLUMINATION DIRECTION
    1.
    发明申请
    TRANSPARENT SMART LIGHT SOURCE CAPABLE OF ADJUSTING ILLUMINATION DIRECTION 有权
    透明的智能光源可调节照明方向

    公开(公告)号:US20110310458A1

    公开(公告)日:2011-12-22

    申请号:US12816858

    申请日:2010-06-16

    IPC分类号: G02F1/153 G02F1/29

    摘要: A transparent smart light source capable of adjusting an illumination direction is provided. The transparent smart light source includes a reflectance/transmittance tunable device that adjusts an illumination direction by reflecting or transmitting light emitted from a transparent organic light-emitting diode (OLED) according to applied voltage, and thus can simply adjust the illumination direction according to purpose. Accordingly, it is possible to prevent optical loss in an unnecessary direction, and power consumption can be reduced. Furthermore, the transparent smart light source can serve as a curtain blocking out external light, as well as a lighting device, and also can be combined with a solar cell to generate electric power.

    摘要翻译: 提供能够调节照明方向的透明智能光源。 透明智能光源包括通过根据施加的电压反射或透射从透明有机发光二极管(OLED)发射的光来调节照明方向的反射/透射可调谐装置,因此可以根据目的简单地调节照明方向 。 因此,可以防止在不必要的方向上的光损失,并且可以降低功耗。 此外,透明智能光源可以用作遮挡外部光的窗帘以及照明装置,并且还可以与太阳能电池组合以产生电力。

    ORGANIC-INORGAIC HYBRID POLYAMIC ESTER, METHOD OF FABRICATING THE SAME, AND METHOD OF FABRICATING A FILM THEREOF
    4.
    发明申请
    ORGANIC-INORGAIC HYBRID POLYAMIC ESTER, METHOD OF FABRICATING THE SAME, AND METHOD OF FABRICATING A FILM THEREOF 审中-公开
    有机无机混合聚酰胺,其制备方法及其制备方法

    公开(公告)号:US20130156960A1

    公开(公告)日:2013-06-20

    申请号:US13619706

    申请日:2012-09-14

    IPC分类号: C08L77/06 B05D3/02 B05D7/24

    摘要: Provided are organic-inorganic hybrid polyamic ester, method of fabricating the same, and method of fabricating a film thereof. The polyamic ester is formed by chemically reacting an inorganic precursor containing inorganic and/or metal element with a polyamic acid having two carboxyl acid of good reactivity per a polymer repeating unit. The inorganic alkoxide is hydrolyzed to be the corresponding inorganic hydroxide. The hydroxyl group is reacted with the carboxylic acid of the polyamic acid and with the hydroxyl group of the other inorganic hydroxide. Therefore, the polyamic ester can steadily include more inorganic materials. The content amount of the inorganic material is relatively high, so that the polyamic ester may have superior refractive index, chemical and heat resistances.

    摘要翻译: 提供有机 - 无机杂化聚酰胺酯,其制备方法及其制备方法。 通过使含有无机和/或金属元素的无机前体与具有两个聚合物重复单元具有良好反应性的羧酸的聚酰胺酸化学反应形成聚酰胺酯。 将无机醇盐水解成相应的无机氢氧化物。 羟基与聚酰胺酸的羧酸和其它无机氢氧化物的羟基反应。 因此,聚酰胺酯可以稳定地包含更多的无机材料。 无机材料的含量相对较高,因此聚酰胺酯可具有优异的折射率,耐化学性和耐热性。

    ORGANIC ELECTROLUMINESCENCE DEVICE
    5.
    发明申请
    ORGANIC ELECTROLUMINESCENCE DEVICE 有权
    有机电致发光器件

    公开(公告)号:US20120049723A1

    公开(公告)日:2012-03-01

    申请号:US13019302

    申请日:2011-02-01

    IPC分类号: H01J1/62

    摘要: Provided is an organic electroluminescence device. The organic electroluminescence device includes: a first device including a first substrate, a first electrode, a first organic light emitting layer and a second electrode, the first electrode, the first organic light emitting layer and the second electrode being sequentially stacked on the first substrate; a second device facing the first device and including a second substrate, a third electrode, a second organic light emitting layer and a fourth electrode, the third electrode, the second organic light emitting layer and the fourth electrode being sequentially stacked on the second substrate; and a bonding layer bonding the first device with the second device, wherein one of lights emitted from the first and second organic light emitting layers resonates in one of the first device or the second device.

    摘要翻译: 提供了一种有机电致发光器件。 有机电致发光元件包括:第一器件,包括第一衬底,第一电极,第一有机发光层和第二电极,第一电极,第一有机发光层和第二电极依次堆叠在第一衬底上 ; 面向第一器件的第二器件,包括第二衬底,第三电极,第二有机发光层和第四电极,第三电极,第二有机发光层和第四电极依次堆叠在第二衬底上; 以及将第一器件与第二器件接合的接合层,其中从第一和第二有机发光层发射的光中的一个在第一器件或第二器件中的一个谐振。

    METHOD OF MANUFACTURING P-TYPE ZnO SEMICONDUCTOR LAYER USING ATOMIC LAYER DEPOSITION AND THIN FILM TRANSISTOR INCLUDING THE P-TYPE ZnO SEMICONDUCTOR LAYER
    6.
    发明申请
    METHOD OF MANUFACTURING P-TYPE ZnO SEMICONDUCTOR LAYER USING ATOMIC LAYER DEPOSITION AND THIN FILM TRANSISTOR INCLUDING THE P-TYPE ZnO SEMICONDUCTOR LAYER 有权
    使用原子层沉积和包括P型ZnO半导体层的薄膜晶体管制造P型ZnO半导体层的方法

    公开(公告)号:US20110084274A1

    公开(公告)日:2011-04-14

    申请号:US12967538

    申请日:2010-12-14

    IPC分类号: H01L29/12 H01L21/34

    摘要: Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate into a chamber; injecting a Zn precursor and an oxygen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the oxygen precursor using an atomic layer deposition (ALD) technique to form a ZnO thin layer on the substrate; and injecting a Zn precursor and an nitrogen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the nitrogen precursor to form a doping layer on the ZnO thin layer.

    摘要翻译: 提供了使用包含构成薄层的元素的前体和包含p型ZnO半导体层的薄膜晶体管(TFT)之间的表面化学反应来制造透明N掺杂p型ZnO半导体层的方法。 该方法包括以下步骤:准备衬底并将衬底装载到腔室中; 将Zn前体和氧前体注入到室中,并且使用原子层沉积(ALD)技术在Zn前体和氧前体之间引起表面化学反应,以在衬底上形成ZnO薄层; 并将Zn前体和氮前体注入到室中,并且使Zn前体和氮前体之间的表面化学反应在ZnO薄层上形成掺杂层。

    WHITE ORGANIC LIGHT EMITTING DEVICE
    7.
    发明申请
    WHITE ORGANIC LIGHT EMITTING DEVICE 审中-公开
    白有机发光装置

    公开(公告)号:US20120032186A1

    公开(公告)日:2012-02-09

    申请号:US13239810

    申请日:2011-09-22

    IPC分类号: H01L33/02

    CPC分类号: H01L51/5036

    摘要: Provided is a white organic light emitting device (OLED), including: a first electrode formed on a substrate; a hole transport layer formed on the first electrode; an emission layer formed on the hole transport layer; an electron transport layer formed on the emission layer; and an color control layer formed on at least one of the hole transport layer, the emission layer and the electron transport layer, and emitting green and/or red by energy transfer from the emission layer. The white OLED emits red, green and blue light with high efficiency, has excellent color reproducibility and a high color reproduction index.

    摘要翻译: 提供了一种白色有机发光器件(OLED),包括:形成在衬底上的第一电极; 形成在所述第一电极上的空穴传输层; 形成在空穴传输层上的发光层; 形成在发光层上的电子传输层; 以及形成在空穴传输层,发射层和电子传输层中的至少一个上的颜色控制层,并且通过从发射层的能量转移发射绿色和/或红色。 白色OLED以高效率发出红色,绿色和蓝色光,具有优异的色彩再现性和高色彩再现指数。

    METHOD OF MANUFACTURING ZnO SEMICONDUCTOR LAYER FOR ELECTRONIC DEVICE AND THIN FILM TRANSISTOR INCLUDING THE ZnO SEMICONDUCTOR LAYER
    8.
    发明申请
    METHOD OF MANUFACTURING ZnO SEMICONDUCTOR LAYER FOR ELECTRONIC DEVICE AND THIN FILM TRANSISTOR INCLUDING THE ZnO SEMICONDUCTOR LAYER 审中-公开
    用于电子器件的ZnO半导体层的制造方法和包括ZnO半导体层的薄膜晶体管

    公开(公告)号:US20080277656A1

    公开(公告)日:2008-11-13

    申请号:US11970737

    申请日:2008-01-08

    IPC分类号: H01L21/20 H01L29/786

    摘要: Provided are a method of manufacturing a ZnO semiconductor layer for an electronic device, which can control the size of crystals of the ZnO semiconductor layer and the number of carriers using a surface chemical reaction between precursors, and a thin film transistor (TFT) including the ZnO semiconductor layer. The method includes: (a) loading a substrate into a chamber; (b) injecting a Zn precursor into the chamber to adsorb the Zn precursor on the substrate; (c) injecting an inert gas or N2 gas into the chamber to remove the remaining Zn precursor; (d) injecting an oxygen precursor into the chamber to cause a reaction between the oxygen precursor and the Zn precursor adsorbed on the substrate to form the ZnO semiconductor layer; (e) injecting the N2 gas or inert gas into the chamber to remove the remaining oxygen precursor; (f) repeating steps (a) through (e); (g) repeatedly processing the surface treatment of the ZnO semiconductor layer using O2 plasma or O3; (h) injecting the N2 gas or inert gas into the chamber to remove the remaining oxygen and Zn precursors; and (i) repeating steps (a) through (h) to control the thickness of the ZnO semiconductor layer. In this method, a transparent TFT is formed using a transparent substrate to enable manufacture of a transparent display device, and a flexible display device can be manufactured using a flexible substrate. Also, the crystallinity of the ZnO semiconductor layer can be increased to improve the mobility of a TFT, and the number of carriers can be controlled to reduce a leakage current. Therefore, a ZnO semiconductor having excellent characteristics can be manufactured.

    摘要翻译: 提供一种制造电子器件的ZnO半导体层的方法,其可以使用前体之间的表面化学反应来控制ZnO半导体层的晶体的尺寸和载流子的数量,以及包括 ZnO半导体层。 该方法包括:(a)将衬底装载到腔室中; (b)将Zn前体注入到室中以将Zn前体吸附在基底上; (c)将惰性气体或N 2 O 2气体注入到室中以除去剩余的Zn前体; (d)将氧前体注入到所述室中以引起所述氧前体和所述衬底上吸附的所述Zn前体之间的反应以形成所述ZnO半导体层; (e)将N 2 N 2气体或惰性气体注入到室中以除去剩余的氧前体; (f)重复步骤(a)至(e); (g)使用O 2等离子体或O 3 3重复处理ZnO半导体层的表面处理; (h)将N 2气体或惰性气体注入到室中以除去剩余的氧和Zn前体; 和(i)重复步骤(a)至(h)以控制ZnO半导体层的厚度。 在该方法中,使用透明基板形成透明TFT以能够制造透明显示装置,并且可以使用柔性基板制造柔性显示装置。 此外,可以增加ZnO半导体层的结晶度以提高TFT的迁移率,并且可以控制载流子数量以减少漏电流。 因此,可以制造具有优异特性的ZnO半导体。

    METHOD OF MANUFACTURING P-TYPE ZnO SEMICONDUCTOR LAYER USING ATOMIC LAYER DEPOSITION AND THIN FILM TRANSISTOR INCLUDING THE P-TYPE ZnO SEMICONDUCTOR LAYER
    9.
    发明申请
    METHOD OF MANUFACTURING P-TYPE ZnO SEMICONDUCTOR LAYER USING ATOMIC LAYER DEPOSITION AND THIN FILM TRANSISTOR INCLUDING THE P-TYPE ZnO SEMICONDUCTOR LAYER 有权
    使用原子层沉积和包括P型ZnO半导体层的薄膜晶体管制造P型ZnO半导体层的方法

    公开(公告)号:US20080164476A1

    公开(公告)日:2008-07-10

    申请号:US11970836

    申请日:2008-01-08

    IPC分类号: H01L29/10 H01L21/31

    摘要: Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate into a chamber; injecting a Zn precursor and an oxygen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the oxygen precursor using an atomic layer deposition (ALD) technique to form a ZnO thin layer on the substrate; and injecting a Zn precursor and an nitrogen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the nitrogen precursor to form a doping layer on the ZnO thin layer.

    摘要翻译: 提供了使用包含构成薄层的元素的前体和包含p型ZnO半导体层的薄膜晶体管(TFT)之间的表面化学反应来制造透明N掺杂p型ZnO半导体层的方法。 该方法包括以下步骤:准备衬底并将衬底装载到腔室中; 将Zn前体和氧前体注入到室中,并且使用原子层沉积(ALD)技术在Zn前体和氧前体之间引起表面化学反应,以在衬底上形成ZnO薄层; 并将Zn前体和氮前体注入到室中,并且使Zn前体和氮前体之间的表面化学反应在ZnO薄层上形成掺杂层。

    DISPLAY DEVICE
    10.
    发明申请
    DISPLAY DEVICE 有权
    显示设备

    公开(公告)号:US20130181615A1

    公开(公告)日:2013-07-18

    申请号:US13359438

    申请日:2012-01-26

    申请人: Jeong Ik LEE

    发明人: Jeong Ik LEE

    IPC分类号: H05B37/02 H01L33/60

    CPC分类号: H01L27/3232

    摘要: Disclosed is a display device, the device including a light emitting part including a first electrode, an organic light emitting layer and a second electrode for radiating light of a first wavelength, a pixel part stacked on the light emitting part to radiate light of a second wavelength using a reflective light, and a capping layer arranged between the light emitting part and the pixel part to reflect the light of the first wavelength and to transmit the light of the second wavelength, whereby legibility, color reproduction range and power consumption can be enhanced.

    摘要翻译: 公开了一种显示装置,该装置包括发光部,其包括第一电极,有机发光层和用于照射第一波长的光的第二电极,堆叠在发光部上的像素部分,以辐射第二波长的光 使用反射光的波长,以及布置在发光部和像素部之间的覆盖层,以反射第一波长的光并透射第二波长的光,从而可以提高可读性,颜色再现范围和功率消耗 。