摘要:
A transparent smart light source capable of adjusting an illumination direction is provided. The transparent smart light source includes a reflectance/transmittance tunable device that adjusts an illumination direction by reflecting or transmitting light emitted from a transparent organic light-emitting diode (OLED) according to applied voltage, and thus can simply adjust the illumination direction according to purpose. Accordingly, it is possible to prevent optical loss in an unnecessary direction, and power consumption can be reduced. Furthermore, the transparent smart light source can serve as a curtain blocking out external light, as well as a lighting device, and also can be combined with a solar cell to generate electric power.
摘要:
The inventive concept provides an organic light emitting diode that can change its color. A color change is embodied by a micro cavity effect caused by a metal thin film partly formed on a positive pole. The organic light emitting diode includes a positive pole, an organic luminous layer and a negative pole that can be sequentially stacked on a substrate, and further include a metal thin film layer having first strip lines extending in a first direction and being arranged in a second direction crossing the first direction on the positive pole.
摘要:
The inventive concept provides light emitting devices and methods of manufacturing a light emitting device. The light emitting device may include a transparent substrate including a first region and a second region, a first transparent electrode disposed on a first surface of the transparent substrate, a second transparent electrode facing and spaced apart from the first transparent electrode, an organic light emitting layer disposed between the first and second transparent electrodes, an assistant electrode disposed between the first and second transparent electrodes and selectively masking the second region, and a light path changing structure disposed on a second surface of the transparent substrate and selectively masking the second region.
摘要:
Provided are organic-inorganic hybrid polyamic ester, method of fabricating the same, and method of fabricating a film thereof. The polyamic ester is formed by chemically reacting an inorganic precursor containing inorganic and/or metal element with a polyamic acid having two carboxyl acid of good reactivity per a polymer repeating unit. The inorganic alkoxide is hydrolyzed to be the corresponding inorganic hydroxide. The hydroxyl group is reacted with the carboxylic acid of the polyamic acid and with the hydroxyl group of the other inorganic hydroxide. Therefore, the polyamic ester can steadily include more inorganic materials. The content amount of the inorganic material is relatively high, so that the polyamic ester may have superior refractive index, chemical and heat resistances.
摘要:
Provided is an organic electroluminescence device. The organic electroluminescence device includes: a first device including a first substrate, a first electrode, a first organic light emitting layer and a second electrode, the first electrode, the first organic light emitting layer and the second electrode being sequentially stacked on the first substrate; a second device facing the first device and including a second substrate, a third electrode, a second organic light emitting layer and a fourth electrode, the third electrode, the second organic light emitting layer and the fourth electrode being sequentially stacked on the second substrate; and a bonding layer bonding the first device with the second device, wherein one of lights emitted from the first and second organic light emitting layers resonates in one of the first device or the second device.
摘要:
Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate into a chamber; injecting a Zn precursor and an oxygen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the oxygen precursor using an atomic layer deposition (ALD) technique to form a ZnO thin layer on the substrate; and injecting a Zn precursor and an nitrogen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the nitrogen precursor to form a doping layer on the ZnO thin layer.
摘要:
Provided is a white organic light emitting device (OLED), including: a first electrode formed on a substrate; a hole transport layer formed on the first electrode; an emission layer formed on the hole transport layer; an electron transport layer formed on the emission layer; and an color control layer formed on at least one of the hole transport layer, the emission layer and the electron transport layer, and emitting green and/or red by energy transfer from the emission layer. The white OLED emits red, green and blue light with high efficiency, has excellent color reproducibility and a high color reproduction index.
摘要:
Provided are a method of manufacturing a ZnO semiconductor layer for an electronic device, which can control the size of crystals of the ZnO semiconductor layer and the number of carriers using a surface chemical reaction between precursors, and a thin film transistor (TFT) including the ZnO semiconductor layer. The method includes: (a) loading a substrate into a chamber; (b) injecting a Zn precursor into the chamber to adsorb the Zn precursor on the substrate; (c) injecting an inert gas or N2 gas into the chamber to remove the remaining Zn precursor; (d) injecting an oxygen precursor into the chamber to cause a reaction between the oxygen precursor and the Zn precursor adsorbed on the substrate to form the ZnO semiconductor layer; (e) injecting the N2 gas or inert gas into the chamber to remove the remaining oxygen precursor; (f) repeating steps (a) through (e); (g) repeatedly processing the surface treatment of the ZnO semiconductor layer using O2 plasma or O3; (h) injecting the N2 gas or inert gas into the chamber to remove the remaining oxygen and Zn precursors; and (i) repeating steps (a) through (h) to control the thickness of the ZnO semiconductor layer. In this method, a transparent TFT is formed using a transparent substrate to enable manufacture of a transparent display device, and a flexible display device can be manufactured using a flexible substrate. Also, the crystallinity of the ZnO semiconductor layer can be increased to improve the mobility of a TFT, and the number of carriers can be controlled to reduce a leakage current. Therefore, a ZnO semiconductor having excellent characteristics can be manufactured.
摘要:
Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate into a chamber; injecting a Zn precursor and an oxygen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the oxygen precursor using an atomic layer deposition (ALD) technique to form a ZnO thin layer on the substrate; and injecting a Zn precursor and an nitrogen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the nitrogen precursor to form a doping layer on the ZnO thin layer.
摘要:
Disclosed is a display device, the device including a light emitting part including a first electrode, an organic light emitting layer and a second electrode for radiating light of a first wavelength, a pixel part stacked on the light emitting part to radiate light of a second wavelength using a reflective light, and a capping layer arranged between the light emitting part and the pixel part to reflect the light of the first wavelength and to transmit the light of the second wavelength, whereby legibility, color reproduction range and power consumption can be enhanced.