Semiconductor integrated circuit
    1.
    发明授权
    Semiconductor integrated circuit 有权
    半导体集成电路

    公开(公告)号:US08748888B2

    公开(公告)日:2014-06-10

    申请号:US12648680

    申请日:2009-12-29

    IPC分类号: H01L23/58

    摘要: A semiconductor integrated circuit includes a multi-chip package having a plurality of semiconductor chips. The semiconductor integrated circuit includes a signal line; and a signal loading compensation section in a semiconductor chip among the plurality of semiconductor chips, configured to apply a designed signal loading to the signal line in response to activation of a test signal. Here, the designed signal loading has a value corresponding to a signal loading component of another semiconductor chip among the plurality of semiconductor chips to the signal line.

    摘要翻译: 半导体集成电路包括具有多个半导体芯片的多芯片封装。 半导体集成电路包括信号线; 以及多个半导体芯片中的半导体芯片中的信号负载补偿部,被配置为响应于测试信号的激活而将设计的信号加载到信号线。 这里,设计的信号负载具有与信号线的多个半导体芯片中的另一半导体芯片的信号负载分量相对应的值。

    SEMICONDUCTOR INTEGRATED CIRCUIT
    2.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT 有权
    半导体集成电路

    公开(公告)号:US20110024743A1

    公开(公告)日:2011-02-03

    申请号:US12648680

    申请日:2009-12-29

    IPC分类号: H01L23/52

    摘要: A semiconductor integrated circuit includes a multi-chip package having a plurality of semiconductor chips. The semiconductor integrated circuit includes a signal line; and a signal loading compensation section in a semiconductor chip among the plurality of semiconductor chips, configured to apply a designed signal loading to the signal line in response to activation of a test signal. Here, the designed signal loading has a value corresponding to a signal loading component of another semiconductor chip among the plurality of semiconductor chips to the signal line.

    摘要翻译: 半导体集成电路包括具有多个半导体芯片的多芯片封装。 半导体集成电路包括信号线; 以及多个半导体芯片中的半导体芯片中的信号负载补偿部,被配置为响应于测试信号的激活而将设计的信号加载到信号线。 这里,设计的信号负载具有与信号线的多个半导体芯片中的另一半导体芯片的信号负载分量相对应的值。

    SEMICONDUCTOR MEMORY APPARATUS AND TEST METHOD THEREOF
    3.
    发明申请
    SEMICONDUCTOR MEMORY APPARATUS AND TEST METHOD THEREOF 有权
    半导体存储器及其测试方法

    公开(公告)号:US20120057413A1

    公开(公告)日:2012-03-08

    申请号:US12948874

    申请日:2010-11-18

    摘要: A semiconductor memory apparatus includes a clock control unit configured to receive a first clock when an enable signal is activated and generate a second clock which has a cycle closer in length to a target clock cycle than the first clock; a DLL input clock generation unit configured to output one of the first clock and the second clock as a DLL input clock according to a DLL select signal; and an address/command input clock generation unit configured to output one of the first clock and the second clock as an AC input clock according to the enable signal.

    摘要翻译: 一种半导体存储装置,包括:时钟控制单元,被配置为当使能信号被激活时接收第一时钟,并产生具有与第一时钟相对于目标时钟周期更长的周期的第二时钟; DLL输入时钟生成单元,被配置为根据DLL选择信号将第一时钟和第二时钟中的一个作为DLL输入时钟输出; 以及地址/命令输入时钟生成单元,被配置为根据使能信号将第一时钟和第二时钟中的一个作为AC输入时钟输出。

    Semiconductor memory apparatus and test method thereof
    4.
    发明授权
    Semiconductor memory apparatus and test method thereof 有权
    半导体存储器及其测试方法

    公开(公告)号:US08300496B2

    公开(公告)日:2012-10-30

    申请号:US12948874

    申请日:2010-11-18

    IPC分类号: G11C8/18 G11C8/16 G11C7/00

    摘要: A semiconductor memory apparatus includes a clock control unit configured to receive a first clock when an enable signal is activated and generate a second clock which has a cycle closer in length to a target clock cycle than the first clock; a DLL input clock generation unit configured to output one of the first clock and the second clock as a DLL input clock according to a DLL select signal; and an address/command input clock generation unit configured to output one of the first clock and the second clock as an AC input clock according to the enable signal.

    摘要翻译: 一种半导体存储装置,包括:时钟控制单元,被配置为当使能信号被激活时接收第一时钟,并产生具有与第一时钟相对于目标时钟周期更长的周期的第二时钟; DLL输入时钟生成单元,被配置为根据DLL选择信号将第一时钟和第二时钟中的一个作为DLL输入时钟输出; 以及地址/命令输入时钟生成单元,被配置为根据使能信号将第一时钟和第二时钟中的一个作为AC输入时钟输出。

    VOLTAGE CONTROL APPARATUS AND METHOD OF CONTROLLING VOLTAGE USING THE SAME
    7.
    发明申请
    VOLTAGE CONTROL APPARATUS AND METHOD OF CONTROLLING VOLTAGE USING THE SAME 有权
    电压控制装置及使用该电压控制装置的电压控制方法

    公开(公告)号:US20090141572A1

    公开(公告)日:2009-06-04

    申请号:US12364670

    申请日:2009-02-03

    摘要: A voltage control apparatus and a method of controlling a voltage using the same. A voltage control apparatus includes a signal generator configured to output a burn-in control signal and a burn-in precharge signal in response to an all bank precharge command, and a voltage controller configured to supply either a first voltage or a second voltage lower than the first voltage to a word line in response to the burn-in control signal and the burn-in precharge signal.

    摘要翻译: 电压控制装置及使用该电压控制装置的电压的控制方法。 一种电压控制装置,包括:信号发生器,被配置为响应于全部分组预充电命令输出老化控制信号和老化预充电信号;以及电压控制器,被配置为将第一电压或第二电压 响应于老化控制信号和老化预充电信号到字线的第一电压。

    Voltage contol apparatus and method of controlling voltage using the same
    8.
    发明申请
    Voltage contol apparatus and method of controlling voltage using the same 有权
    电压调节装置及使用该电压控制电压的方法

    公开(公告)号:US20080089148A1

    公开(公告)日:2008-04-17

    申请号:US11822358

    申请日:2007-07-05

    IPC分类号: G11C7/00 G11C8/00

    摘要: A voltage control apparatus and a method of controlling a voltage using the same. A voltage control apparatus includes a signal generator configured to output a burn-in control signal and a burn-in precharge signal in response to an all bank precharge command, and a voltage controller configured to supply either a first voltage or a second voltage lower than the first voltage to a word line in response to the burn-in control signal and the burn-in precharge signal.

    摘要翻译: 电压控制装置及使用该电压控制装置的电压的控制方法。 一种电压控制装置,包括:信号发生器,被配置为响应于全部分组预充电命令输出老化控制信号和老化预充电信号;以及电压控制器,被配置为将第一电压或第二电压 响应于老化控制信号和老化预充电信号到字线的第一电压。

    Internal voltage generator for semiconductor device
    9.
    发明授权
    Internal voltage generator for semiconductor device 有权
    半导体器件内部电压发生器

    公开(公告)号:US06867641B2

    公开(公告)日:2005-03-15

    申请号:US10671382

    申请日:2003-09-25

    CPC分类号: G05F1/465

    摘要: Disclosed is an internal voltage generator which generates a stable internal voltage using two power up sensing means. Clamp means outputs a first voltage. First and second power up sensing means sense the external applied to the semiconductor device and output first and second control signals, respectively. A first switch receives the first voltage and a switch controller receives the first and second control signals from the first and second power up sensing means and controls turn on/off of the first switch. A second switch is turned on/off according to the second control signal from the second power up sensing means and receives a second voltage. An amplifier selectively receives the first and second voltages from the first and second switches and outputs the second voltage.

    摘要翻译: 公开了一种内部电压发生器,其使用两个上电感测装置产生稳定的内部电压。 钳位表示输出第一电压。 第一和第二上电感测装置检测施加到半导体器件的外部并分别输出第一和第二控制信号。 第一开关接收第一电压,开关控制器从第一和第二上电感测装置接收第一和第二控制信号,并控制第一开关的导通/截止。 根据来自第二上电检测装置的第二控制信号,第二开关被接通/断开,并接收第二电压。 放大器选择性地接收来自第一和第二开关的第一和第二电压并输出第二电压。

    Electric fuse circuit and method of operating the same
    10.
    发明授权
    Electric fuse circuit and method of operating the same 有权
    电熔丝电路及其操作方法

    公开(公告)号:US08421520B2

    公开(公告)日:2013-04-16

    申请号:US12841106

    申请日:2010-07-21

    申请人: Jun Gi Choi

    发明人: Jun Gi Choi

    IPC分类号: G01R31/28

    摘要: A fuse circuit includes an electric fuse coupled to a first voltage source; a low resistance unit coupled to the electric fuse and having a junction which is capable of breaking down; and a switching unit coupled between the low resistance unit and a second voltage source.

    摘要翻译: 熔丝电路包括耦合到第一电压源的电熔丝; 耦合到电熔丝并具有能够分解的结的低电阻单元; 以及耦合在所述低电阻单元和第二电压源之间的开关单元。