摘要:
Provided is a semiconductor integrated circuit. The semiconductor integrated circuit comprises: a pair of interconnections; a fuse connecting the pair of interconnections; and one or more heat dissipation patterns connecting the pair of interconnections and are disposed around the fuse.
摘要:
Provided is a semiconductor integrated circuit. The semiconductor integrated circuit comprises: a pair of interconnections; a fuse connecting the pair of interconnections; and one or more heat dissipation patterns connecting the pair of interconnections and are disposed around the fuse.
摘要:
A semiconductor memory apparatus includes a clock control unit configured to receive a first clock when an enable signal is activated and generate a second clock which has a cycle closer in length to a target clock cycle than the first clock; a DLL input clock generation unit configured to output one of the first clock and the second clock as a DLL input clock according to a DLL select signal; and an address/command input clock generation unit configured to output one of the first clock and the second clock as an AC input clock according to the enable signal.
摘要:
A semiconductor integrated circuit includes a multi-chip package having a plurality of semiconductor chips. The semiconductor integrated circuit includes a signal line; and a signal loading compensation section in a semiconductor chip among the plurality of semiconductor chips, configured to apply a designed signal loading to the signal line in response to activation of a test signal. Here, the designed signal loading has a value corresponding to a signal loading component of another semiconductor chip among the plurality of semiconductor chips to the signal line.
摘要:
A semiconductor memory apparatus includes a clock control unit configured to receive a first clock when an enable signal is activated and generate a second clock which has a cycle closer in length to a target clock cycle than the first clock; a DLL input clock generation unit configured to output one of the first clock and the second clock as a DLL input clock according to a DLL select signal; and an address/command input clock generation unit configured to output one of the first clock and the second clock as an AC input clock according to the enable signal.
摘要:
A semiconductor integrated circuit includes a multi-chip package having a plurality of semiconductor chips. The semiconductor integrated circuit includes a signal line; and a signal loading compensation section in a semiconductor chip among the plurality of semiconductor chips, configured to apply a designed signal loading to the signal line in response to activation of a test signal. Here, the designed signal loading has a value corresponding to a signal loading component of another semiconductor chip among the plurality of semiconductor chips to the signal line.
摘要:
Disclosed herein are a method of generating a two-dimensional hole gas (2DHG) using a type-2 quantum well formed using semiconductors with different electron affinities or band gap, and a high-speed p-type semiconductor device using the 2DHG. To this end, the method includes providing a semiconductor substrate; growing a first semiconductor layer on the semiconductor substrate, growing a second semiconductor layer with a different electron affinity or band gap from the first semiconductor layer on the first semiconductor layer, and growing a third semiconductor layer with a different electron affinity or band gap from the second semiconductor layer, thereby forming a type-2 quantum well; and forming a p-type doping layer in the vicinity of the type-2 quantum well, thereby generating the 2DHG.
摘要:
A repair circuit of a semiconductor apparatus includes a plurality of through-silicon vias including repeated sets of one repair through-silicon via and an M number of normal through-silicon vias; a transmission unit configured to multiplex input data at a first multiplexing rate based on control signals, and transmit the multiplexed data to the plurality of through-silicon vias; a reception unit configured to multiplex signals transmitted through the plurality of through-silicon vias at a second multiplexing rate based on the control signals, and generate output data; and a control signal generation unit configured to generate sets of the control signals based on an input number of a test signal.
摘要:
A write driver control circuit controls operations of a write driver, which amplifies and transmits data of a pair of global input/output lines to a pair of local input/output lines in a write operation. A single type latch section compares states of first and second data of the pair of global input/output lines differentially inputted in a first status and then outputs a first output signal to a first output node; compares states of the first and second data differentially inputted in a second status and then outputs a second output signal to a second output node; and continuously latches states of the first and second output nodes before a precharge operation starts. A precharge controller equalizes and precharges the first and second output nodes in the precharge operation. An output section outputs first and second driver signals and first and second latch signals to control the write driver.
摘要:
A memory system includes: a controller configured to provide a hidden auto refresh command; and a memory configured to perform a refresh operation in response to the hidden auto refresh command. The controller and the memory communicate with each other so that each refresh address of the controller and the memory has the same value as each other.