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    VARIABLE RESISTANCE MEMORY DEVICE USING A CHANNEL-SHAPED VARIABLE RESISTANCE PATTERN
    1.
    发明申请
    VARIABLE RESISTANCE MEMORY DEVICE USING A CHANNEL-SHAPED VARIABLE RESISTANCE PATTERN 审中-公开
    使用通道形变可变电阻图案的可变电阻存储器件

    公开(公告)号：US20100051896A1

    公开(公告)日：2010-03-04

    申请号：US12549887

    申请日：2009-08-28

    申请人： Jeonghee Park ,  Yongho Ha ,  Dohyung Kim ,  Joonsang Park ,  Hyeyoung Park ,  Hyun-Suk Kwon

    发明人： Jeonghee Park ,  Yongho Ha ,  Dohyung Kim ,  Joonsang Park ,  Hyeyoung Park ,  Hyun-Suk Kwon

    IPC分类号： H01L47/00

    CPC分类号： H01L27/24

    摘要： A variable resistance memory device includes a substrate and a plurality of spaced apart lower electrodes on the substrate. The device further includes a variable resistance material pattern comprising two vertically opposed wall members connected by a bottom member disposed on and electrically connected to at least one of the plurality of lower electrodes and an upper electrode on the variable resistance material pattern. An area of contact of the variable resistance material pattern with the at least one lower electrode may be rectangular, circular, ring-shaped, or arc-shaped. Fabrication methods are also described.

    摘要翻译： 可变电阻存储器件包括衬底和在衬底上的多个间隔开的下电极。 该装置还包括可变电阻材料图案，包括两个垂直相对的壁构件，该两个垂直相对的壁构件通过设置在多个下部电极中的至少一个上并与其电连接的底部构件和可变电阻材料图案上的上部电极连接。 可变电阻材料图案与至少一个下电极的接触区域可以是矩形，圆形，环形或弧形。 还描述了制造方法。

    VARIABLE RESISTANCE MEMORY DEVICE, METHOD OF FABRICATING THE SAME, AND MEMORY SYSTEM INCLUDING THE SAME
    3.
    发明申请
    VARIABLE RESISTANCE MEMORY DEVICE, METHOD OF FABRICATING THE SAME, AND MEMORY SYSTEM INCLUDING THE SAME 审中-公开
    可变电阻存储器件，其制造方法和包括其的存储器系统

    公开(公告)号：US20100124800A1

    公开(公告)日：2010-05-20

    申请号：US12617754

    申请日：2009-11-13

    申请人： Jeonghee Park ,  Sunglae Cho ,  Yongho Ha ,  Hyun-Suk Kwon

    发明人： Jeonghee Park ,  Sunglae Cho ,  Yongho Ha ,  Hyun-Suk Kwon

    IPC分类号： H01L21/06

    CPC分类号： H01L45/06 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1683

    摘要： A method of fabricating a variable resistance memory device includes a plasma etching process to remove contaminants from variable resistance material that forms variable resistance elements of the device. Bottom electrodes are formed on a semiconductor substrate. Next, an interlayer dielectric layer having trenches that expose the bottom electrodes is formed on the substrate. Then a layer of variable resistance material is formed. The variable resistance material covers the interlayer dielectric layer and fills the trenches. The variable resistance material is then planarized down to at least the top surface of the interlayer dielectric layer, thereby leaving elements of the variable resistance material in the trenches. The variable resistance material in the trenches is etched to remove contaminants, produced as a result of the planarizing process, from atop the variable resistance material in the trenches. A top electrode is then formed on the variable resistance material.

    摘要翻译： 制造可变电阻存储器件的方法包括等离子体蚀刻工艺，以从形成该器件的可变电阻元件的可变电阻材料中除去污染物。 底电极形成在半导体衬底上。 接下来，在基板上形成具有露出底部电极的沟槽的层间电介质层。 然后形成一层可变电阻材料。 可变电阻材料覆盖层间电介质层并填充沟槽。 然后将可变电阻材料平坦化到至少层间电介质层的顶表面，从而将可变电阻材料的元件留在沟槽中。 蚀刻沟槽中的可变电阻材料，以从沟槽中的可变电阻材料的顶部去除作为平坦化处理的结果产生的污染物。 然后在可变电阻材料上形成顶部电极。

    Phase changeable memory cells and methods of fabricating the same
    4.
    发明授权
    Phase changeable memory cells and methods of fabricating the same 有权
    相变存储单元及其制造方法

    公开(公告)号：US07329579B2

    公开(公告)日：2008-02-12

    申请号：US11173720

    申请日：2005-06-30

    申请人： Yongho Ha ,  Jihye Yi ,  Hyunjo Kim

    发明人： Yongho Ha ,  Jihye Yi ,  Hyunjo Kim

    IPC分类号： H01L21/336

    CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L45/122 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/1666

    摘要： A phase changeable memory cell is disclosed. According to embodiments of the invention, a phase changeable memory cell is formed that has a reduced contact area with one of the electrodes, compared to previously known phase changeable memory cells. This contact area can be a sidewall of one of the electrodes, or a perimeter edge of a contact opening through the electrode. Thus, when the thickness of the electrode is relatively thin, the contact area between the electrode and the phase changeable material pattern is relatively very small. As a result, it is possible to reduce power consumption of the phase changeable memory device and to form reliable and compact phase changeable memory cells.

    摘要翻译： 公开了一种相变存储器单元。 根据本发明的实施例，与先前已知的相变存储器单元相比，形成了与一个电极具有减小的接触面积的相变存储单元。 该接触区域可以是电极中的一个的侧壁或通过电极的接触开口的周边边缘。 因此，当电极的厚度相对较薄时，电极与相变材料图案之间的接触面积相对较小。 结果，可以降低相变存储器件的功耗并形成可靠且紧凑的相变存储器单元。

    Phase changeable memory cells
    5.
    发明授权
    Phase changeable memory cells 有权
    相变存储单元

    公开(公告)号：US07323734B2

    公开(公告)日：2008-01-29

    申请号：US10374959

    申请日：2003-02-25

    申请人： Yongho Ha ,  Jihye Yi ,  Hyunjo Kim

    发明人： Yongho Ha ,  Jihye Yi ,  Hyunjo Kim

    IPC分类号： H01L27/108

    CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L45/122 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/1666

    摘要： A phase changeable memory cell is disclosed. According to embodiments of the invention, a phase changeable memory cell is formed that has a reduced contact area with one of the electrodes, compared to previously known phase changeable memory cells. This contact area can be a sidewall of one of the electrodes, or a perimeter edge of a contact opening through the electrode. Thus, when the thickness of the electrode is relatively thin, the contact area between the electrode and the phase changeable material pattern is relatively very small. As a result, it is possible to reduce power consumption of the phase changeable memory device and to form reliable and compact phase changeable memory cells.

    摘要翻译： 公开了一种相变存储器单元。 根据本发明的实施例，与先前已知的相变存储器单元相比，形成了与一个电极具有减小的接触面积的相变存储单元。 该接触区域可以是电极中的一个的侧壁或通过电极的接触开口的周边边缘。 因此，当电极的厚度相对较薄时，电极与相变材料图案之间的接触面积相对较小。 结果，可以降低相变存储器件的功耗并形成可靠且紧凑的相变存储器单元。

    Phase Changeable Memory Devices
    6.
    发明申请
    Phase Changeable Memory Devices 审中-公开
    相变存储器件

    公开(公告)号：US20110108794A1

    公开(公告)日：2011-05-12

    申请号：US13010271

    申请日：2011-01-20

    申请人： Yongho Ha ,  Jihye Yi ,  Hyunjo Kim

    发明人： Yongho Ha ,  Jihye Yi ,  Hyunjo Kim

    IPC分类号： H01L47/00

    CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L45/122 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/1666

    摘要： Phase changeable memory devices are provided. A phase changeable memory device may include two first electrodes spaced apart from each other. The phase changeable memory device may also include a common phase changeable material contacting a sidewall of each of the two first electrodes. The phase changeable memory device may further include a second electrode overlying the common phase changeable material. A top surface of each of the two first electrodes may not physically contact the phase changeable material.

    摘要翻译： 提供了相变存储器件。 相变存储器件可以包括彼此间隔开的两个第一电极。 相变存储器件还可以包括与两个第一电极中的每一个的侧壁接触的公共相变材料。 相变存储器件还可以包括覆盖共同相变材料的第二电极。 两个第一电极中的每一个的顶表面可以不物理地接触相变材料。

    Phase changeable memory devices
    7.
    发明授权
    Phase changeable memory devices 失效
    相变存储器件

    公开(公告)号：US07893417B2

    公开(公告)日：2011-02-22

    申请号：US11952829

    申请日：2007-12-07

    申请人： Yongho Ha ,  Jihye Yi ,  Hyunjo Kim

    发明人： Yongho Ha ,  Jihye Yi ,  Hyunjo Kim

    IPC分类号： H01L29/02

    CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L45/122 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/1666

    摘要： A phase changeable memory cell is disclosed. According to embodiments of the invention, a phase changeable memory cell is formed that has a reduced contact area with one of the electrodes, compared to previously known phase changeable memory cells. This contact area can be a sidewall of one of the electrodes, or a perimeter edge of a contact opening through the electrode. Thus, when the thickness of the electrode is relatively thin, the contact area between the electrode and the phase changeable material pattern is relatively very small. As a result, it is possible to reduce power consumption of the phase changeable memory device and to form reliable and compact phase changeable memory cells.

    摘要翻译： 公开了一种相变存储器单元。 根据本发明的实施例，与先前已知的相变存储器单元相比，形成了与一个电极具有减小的接触面积的相变存储单元。 该接触区域可以是电极中的一个的侧壁或通过电极的接触开口的周边边缘。 因此，当电极的厚度相对较薄时，电极与相变材料图案之间的接触面积相对较小。 结果，可以降低相变存储器件的功耗并形成可靠且紧凑的相变存储器单元。

    Phase changeable memory cells and methods of fabricating the same
    8.
    发明申请
    Phase changeable memory cells and methods of fabricating the same 有权
    相变存储单元及其制造方法

    公开(公告)号：US20050245030A1

    公开(公告)日：2005-11-03

    申请号：US11173720

    申请日：2005-06-30

    申请人： Yongho Ha ,  Jihye Yi ,  Hyunjo Kim

    发明人： Yongho Ha ,  Jihye Yi ,  Hyunjo Kim

    IPC分类号： H01L27/10 ,  H01L27/24 ,  H01L21/336

    CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L45/122 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/1666

    摘要： A phase changeable memory cell is disclosed. According to embodiments of the invention, a phase changeable memory cell is formed that has a reduced contact area with one of the electrodes, compared to previously known phase changeable memory cells. This contact area can be a sidewall of one of the electrodes, or a perimeter edge of a contact opening through the electrode. Thus, when the thickness of the electrode is relatively thin, the contact area between the electrode and the phase changeable material pattern is relatively very small. As a result, it is possible to reduce power consumption of the phase changeable memory device and to form reliable and compact phase changeable memory cells.

    摘要翻译： 公开了一种相变存储器单元。 根据本发明的实施例，与先前已知的相变存储器单元相比，形成了与一个电极具有减小的接触面积的相变存储单元。 该接触区域可以是电极中的一个的侧壁或通过电极的接触开口的周边边缘。 因此，当电极的厚度相对较薄时，电极与相变材料图案之间的接触面积相对较小。 结果，可以降低相变存储器件的功耗并形成可靠且致密的相变存储单元。