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26 条记录 (耗时 0.025 秒)

    WAFER-LEVEL ALIGNMENT OF OPTICAL ELEMENTS
    3.
    发明申请
    WAFER-LEVEL ALIGNMENT OF OPTICAL ELEMENTS 失效
    光学元件的水平对准

    公开(公告)号：US20080050081A1

    公开(公告)日：2008-02-28

    申请号：US11771642

    申请日：2007-06-29

    申请人： Andreas Goebel ,  Gregory Wojcik ,  Lawrence West

    发明人： Andreas Goebel ,  Gregory Wojcik ,  Lawrence West

    IPC分类号： G02B6/10

    CPC分类号： G02B27/62

    摘要： Methods are disclosed of fabricating an optical assembly. An active optical element is disposed near or on a first surface of a slab of optical material. A passive optical element is formed on a second surface of the slab, with the second surface being substantially parallel to the first surface. An optical axis of the passive optical element is aligned with an optical path between the passive optical element and an active region of the active optical element using a lithographic alignment process.

    摘要翻译： 公开了制造光学组件的方法。 有源光学元件设置在光学材料板的第一表面附近或之上。 无源光学元件形成在板坯的第二表面上，第二表面基本上平行于第一表面。 使用光刻对准过程，无源光学元件的光轴与无源光学元件与有源光学元件的有源区域之间的光路对准。

    Pinch waveguide
    4.
    发明申请
    Pinch waveguide 审中-公开
    夹紧波导

    公开(公告)号：US20070110379A1

    公开(公告)日：2007-05-17

    申请号：US11599192

    申请日：2006-11-14

    申请人： Lawrence West ,  Gregory Wojcik

    发明人： Lawrence West ,  Gregory Wojcik

    IPC分类号： G02B6/10

    CPC分类号： G02B6/1228

    摘要： A waveguide is provided including a first photon propagating material having a first index of refraction (n1) and having a pinch disposed therein, the pinch having a second index of refraction (n1′); and a second photon propagating material disposed in optical communication with the first photon propagating material and having a third index of refraction (n2); wherein n1

    摘要翻译： 提供一种波导，其包括具有第一折射率（n 1）并且具有夹在其中的夹持物的第一光子传播材料，所述夹具具有第二折射率（n 1'）; 和与第一光子传播材料光学连通并具有第三折射率（n 2）的第二光子传播材料; 其中n 1

    Self-aligned implanted waveguide detector
    5.
    发明申请
    Self-aligned implanted waveguide detector 失效
    自对准植入波导检测器

    公开(公告)号：US20050212068A1

    公开(公告)日：2005-09-29

    申请号：US10959897

    申请日：2004-10-06

    申请人： Francisco Leon ,  Lawrence West

    发明人： Francisco Leon ,  Lawrence West

    IPC分类号： H01L27/14

    CPC分类号： H01L31/035254 ,  B82Y20/00 ,  G02B6/12004

    摘要： A method of fabricating a detector, the method including forming an island of detector core material on a substrate, the island having a horizontally oriented top end, a vertically oriented first sidewall, and a vertically oriented second sidewall that is opposite said first sidewall; implanting a first dopant into the first sidewall to form a first conductive region that has a top end that is part of the top end of the island; implanting a second dopant into the second sidewall to form a second conductive region that has a top end that is part of the top end of the island; fabricating a first electrical connection to the top end of the first conductive region; and fabricating a second electrical connection to the top end of the second conductive region.

    摘要翻译： 一种制造检测器的方法，所述方法包括在衬底上形成检测器芯材料岛，所述岛具有水平取向的顶端，垂直取向的第一侧壁和与所述第一侧壁相对的垂直取向的第二侧壁; 将第一掺杂剂注入到所述第一侧壁中以形成具有作为所述岛的顶端的一部分的顶端的第一导电区域; 将第二掺杂剂注入所述第二侧壁中以形成具有作为所述岛的顶端的一部分的顶端的第二导电区域; 制造到第一导电区域的顶端的第一电连接; 以及制造到所述第二导电区域的顶端的第二电连接。

    Self-aligned implanted waveguide detector
    6.
    发明申请
    Self-aligned implanted waveguide detector 审中-公开

    公开(公告)号：US20070272996A1

    公开(公告)日：2007-11-29

    申请号：US11787187

    申请日：2007-04-13

    申请人： Francisco Leon ,  Lawrence West

    发明人： Francisco Leon ,  Lawrence West

    IPC分类号： H01L31/075 ,  H01L31/18

    CPC分类号： H01L31/035254 ,  B82Y20/00 ,  G02B6/12004

    摘要： A method of fabricating a detector, the method including forming an island of detector core material on a substrate, the island having a horizontally oriented top end, a vertically oriented first sidewall, and a vertically oriented second sidewall that is opposite said first sidewall; implanting a first dopant into the first sidewall to form a first conductive region that has a top end that is part of the top end of the island; implanting a second dopant into the second sidewall to form a second conductive region that has a top end that is part of the top end of the island; fabricating a first electrical connection to the top end of the first conductive region; and fabricating a second electrical connection to the top end of the second conductive region.

    Planar integrated circuit including a plasmon waveguide-fed schottky barrier detector and transistors connected therewith
    7.
    发明申请
    Planar integrated circuit including a plasmon waveguide-fed schottky barrier detector and transistors connected therewith 失效
    平面集成电路包括等离子体波导馈电肖特基势垒检测器和与其连接的晶体管

    公开(公告)号：US20050104684A1

    公开(公告)日：2005-05-19

    申请号：US10854075

    申请日：2004-05-26

    申请人： Gregory Wojcik ,  Lawrence West ,  Thomas Pearsall

    发明人： Gregory Wojcik ,  Lawrence West ,  Thomas Pearsall

    IPC分类号： G02B6/12 ,  G02B6/122 ,  G02B6/42 ,  H01L31/0232 ,  H01L31/062 ,  H01L31/108 ,  H01L31/113 ,  H01P1/10 ,  H01P1/15 ,  H01P5/12

    CPC分类号： G02B6/1226 ,  B82Y20/00 ,  G02B6/12004 ,  G02B6/42 ,  H01L31/02327 ,  H01L31/108 ,  H01P1/15

    摘要： A planar integrated circuit includes a semiconductor substrate having a substrate surface and a trench in the substrate, a waveguide medium in the trench having a top surface and a light propagation axis, the trench having a sufficient depth for the waveguide medium to be at or below said substrate surface, and at least one Schottky barrier electrode formed on the top surface of said waveguide medium and defining a Schottky barrier detector consisting of the electrode and the portion of the waveguide medium underlying the Schottky barrier electrode, at least the underlying portion of the waveguide medium being a semiconductor and defining an electrode-semiconductor interface parallel to the light propagation axis so that light of a predetermined wavelength from said waveguide medium propagates along the interface as a plasmon-polariton wave.

    摘要翻译： 平面集成电路包括具有衬底表面和衬底中的沟槽的半导体衬底，沟槽中的波导介质具有顶表面和光传播轴，沟槽具有足够的深度以使波导介质处于或低于 所述衬底表面和形成在所述波导介质的顶表面上的至少一个肖特基势垒电极，并且限定由所述电极和所述肖特基势垒电极下方的所述波导介质的所述部分组成的肖特基势垒检测器， 波导介质是半导体并且限定平行于光传播轴线的电极 - 半导体界面，使得来自所述波导介质的预定波长的光作为等离子体 - 激元波沿着界面传播。

    Method and apparatus for implementing an activity watch for financial accounts
    8.
    发明申请
    Method and apparatus for implementing an activity watch for financial accounts 审中-公开
    实施财务账目活动监视的方法和装置

    公开(公告)号：US20070192247A1

    公开(公告)日：2007-08-16

    申请号：US11346090

    申请日：2006-02-01

    申请人： Lawrence West

    发明人： Lawrence West

    IPC分类号： G06Q40/00

    CPC分类号： G06Q40/02 ,  G06Q20/108

    摘要： One embodiment of the present invention provides a system that facilitates an “activity watch” operation on a financial account. During operation, the system receives records for transactions associated with the financial account. These records are received at a third-party server from a financial institution which maintains the financial account, wherein the third-party server is independent from the financial institution. Next, the system applies one or more rules to the records to determine whether an alert should be triggered. If a rule indicates that an alert should be triggered, the system sends the alert to a user who has an interest in the financial account.

    摘要翻译： 本发明的一个实施例提供了一种便于对金融账户进行“活动观察”操作的系统。 在操作期间，系统接收与金融账户相关联的交易的记录。 这些记录是从维护金融账户的金融机构的第三方服务器收到的，其中第三方服务器是独立于金融机构的。 接下来，系统对记录应用一个或多个规则，以确定是否应触发警报。 如果规则指示应触发警报，则系统将该警报发送给对该财务帐户有兴趣的用户。

    Semiconductor laser
    9.
    发明申请
    Semiconductor laser 审中-公开
    半导体激光器

    公开(公告)号：US20070153868A1

    公开(公告)日：2007-07-05

    申请号：US11599191

    申请日：2006-11-14

    申请人： Lawrence West ,  Gregory Wojcik

    发明人： Lawrence West ,  Gregory Wojcik

    IPC分类号： H01S3/08

    CPC分类号： G02B6/12004 ,  G02B6/1228 ,  H01S5/026 ,  H01S5/041 ,  H01S5/0421 ,  H01S5/0424 ,  H01S5/1032 ,  H01S5/1064 ,  H01S5/125 ,  H01S5/2045 ,  H01S5/22 ,  H01S5/2275

    摘要： A semiconductor laser having an optical volume of between about 0.1×λ3 to about 30×λ3, where λ is the wavelength of light emitted by the semiconductor laser. The semiconductor laser comprises an optical cavity having a proximal and distal end; a first reflector disposed at the proximal end; a second reflector disposed at the distal end, said optical cavity being defined by the first and second reflectors; an active region disposed transversely with respect to the optical cavity, wherein the semiconductor laser produces an axial emission of light from the distal end of the optical cavity.

    摘要翻译： 一种半导体激光器，其光学体积为约0.1λ3至约30×3 3，其中λ为由半导体激光器发出的光的波长。 半导体激光器包括具有近端和远端的光学腔; 设置在近端的第一反射器; 设置在所述远端的第二反射器，所述光腔由所述第一和第二反射器限定; 相对于所述光腔横向设置的有源区，其中所述半导体激光器产生来自所述光腔的远端的轴向轴向发射。