公开(公告)号：US07569871B2

公开(公告)日：2009-08-04

申请号：US12059182

申请日：2008-03-31

申请人： Walter H. Nagy ,  Jerry Wayne Johnson ,  Edwin Lanier Piner ,  Pradeep Rajagopal ,  John Claassen Roberts ,  Sameer Singhal ,  Robert Joseph Therrien ,  Andrei Vescan ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Kevin J. Linthicum

发明人： Walter H. Nagy ,  Jerry Wayne Johnson ,  Edwin Lanier Piner ,  Pradeep Rajagopal ,  John Claassen Roberts ,  Sameer Singhal ,  Robert Joseph Therrien ,  Andrei Vescan ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Kevin J. Linthicum

IPC分类号： H01L31/072

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US07352016B2

公开(公告)日：2008-04-01

申请号：US11598551

申请日：2006-11-13

申请人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Jerry Wayne Johnson ,  Kevin J. Linthicum ,  Edwin Lanier Piner ,  Pradeep Rajagopal ,  John Claassen Roberts ,  Sameer Singhal ,  Robert Joseph Therrien ,  Andrei Vescan

发明人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Jerry Wayne Johnson ,  Kevin J. Linthicum ,  Edwin Lanier Piner ,  Pradeep Rajagopal ,  John Claassen Roberts ,  Sameer Singhal ,  Robert Joseph Therrien ,  Andrei Vescan

IPC分类号： H01L31/00

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US09608102B2

公开(公告)日：2017-03-28

申请号：US11607129

申请日：2006-11-30

申请人： Jerry Wayne Johnson ,  Sameer Singhal ,  Allen W. Hanson ,  Robert Joseph Therrien

发明人： Jerry Wayne Johnson ,  Sameer Singhal ,  Allen W. Hanson ,  Robert Joseph Therrien

IPC分类号： H01L29/66 ,  H01L29/778 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/20

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41725 ,  H01L29/42316 ,  H01L29/66462

摘要： Gallium nitride material devices and methods associated with the same. In some embodiments, the devices may be transistors which include a conductive structure connected to a source electrode. The conductive structure may form a source field plate which can be formed over a dielectric material and can extend in the direction of the gate electrode of the transistor. The source field plate may reduce the electrical field (e.g., peak electrical field and/or integrated electrical field) in the region of the device between the gate electrode and the drain electrode which can lead to a number of advantages including reduced gate-drain feedback capacitance, reduced surface electron concentration, increased breakdown voltage, and improved device reliability. These advantages enable the gallium nitride material transistors to operate at high drain efficiencies and/or high output powers. The devices can be used in RF power applications, amongst others.

公开(公告)号：US20100019850A1

公开(公告)日：2010-01-28

申请号：US12508871

申请日：2009-07-24

申请人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, JR. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

发明人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, JR. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

IPC分类号： H03F3/16 ,  H01L29/20

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US07994540B2

公开(公告)日：2011-08-09

申请号：US12508871

申请日：2009-07-24

申请人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, Jr. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

发明人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, Jr. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

IPC分类号： H01L31/0328

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US07135720B2

公开(公告)日：2006-11-14

申请号：US10913297

申请日：2004-08-05

申请人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, Jr. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

发明人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, Jr. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

IPC分类号： H01L31/072

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

公开(公告)号：US20080246058A1

公开(公告)日：2008-10-09

申请号：US12059182

申请日：2008-03-31

申请人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

发明人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

IPC分类号： H01L29/00

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US20120315552A1

公开(公告)日：2012-12-13

申请号：US13155752

申请日：2011-06-08

申请人： Vojtech Svoboda ,  Jianjun Wei ,  Sameer Singhal

发明人： Vojtech Svoboda ,  Jianjun Wei ,  Sameer Singhal

IPC分类号： H01M8/16 ,  H01M4/60 ,  G01N27/327 ,  C25B11/04 ,  B82Y15/00 ,  B82Y30/00

CPC分类号： H01M4/60 ,  B82Y30/00 ,  H01M8/16 ,  Y02E60/527

摘要： The present disclosure provides an electrode including an electrically conductive ink deposited thereon comprising: a nano-scale conducting material; a binding agent; and an enzyme; wherein said ink is essentially solvent free. In one embodiment, the ink includes at least one of a mediator, a cross-linking agent and a substrate as well. In one further embodiment, the electrode provided herein is used in a battery, fuel cell or sensor.

摘要翻译： 本公开提供了一种包括沉积在其上的导电油墨的电极，包括：纳米级导电材料; 粘合剂; 和酶; 其中所述油墨基本上不含溶剂。 在一个实施方案中，油墨还包括介体，交联剂和底物中的至少一种。 在另一实施例中，本文提供的电极用于电池，燃料电池或传感器。

公开(公告)号：US08026596B2

公开(公告)日：2011-09-27

申请号：US11839030

申请日：2007-08-15

申请人： Sameer Singhal ,  Andrew Edwards ,  Chul H. Park ,  Quinn Martin ,  Isik C. Kizilyalli

发明人： Sameer Singhal ,  Andrew Edwards ,  Chul H. Park ,  Quinn Martin ,  Isik C. Kizilyalli

IPC分类号： H01L23/373 ,  H01L21/58

CPC分类号： H01L27/0605 ,  H01L23/4824 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/78681 ,  H01L2924/0002 ,  H01L2924/01322 ,  H01L2924/10158 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00

摘要： Gallium nitride material devices and methods associated with the devices are described. The devices may be designed to provide enhanced thermal conduction and reduced thermal resistance. The increased thermal conduction through and out of the gallium nitride devices enhances operability of the devices, including providing excellent RF operation, reliability, and lifetime.

摘要翻译： 描述了与装置相关的氮化镓材料装置和方法。 这些器件可以设计成提供增强的热传导和降低的热阻。 通过和移出氮化镓器件的增加的热传导增强了器件的可操作性，包括提供优异的RF操作，可靠性和寿命。

公开(公告)号：US08685286B2

公开(公告)日：2014-04-01

申请号：US13155752

申请日：2011-06-08

申请人： Vojtech Svoboda ,  Jianjun Wei ,  Sameer Singhal

发明人： Vojtech Svoboda ,  Jianjun Wei ,  Sameer Singhal

IPC分类号： H01B1/00 ,  H01B1/04 ,  H01B1/06

CPC分类号： H01M4/60 ,  B82Y30/00 ,  H01M8/16 ,  Y02E60/527

摘要： The present disclosure provides an electrode including an electrically conductive ink deposited thereon comprising: a nano-scale conducting material; a binding agent; and an enzyme; wherein said ink is essentially solvent free. In one embodiment, the ink includes at least one of a mediator, a cross-linking agent and a substrate as well. In one further embodiment, the electrode provided herein is used in a battery, fuel cell or sensor.

摘要翻译： 本公开提供了一种包括沉积在其上的导电油墨的电极，包括：纳米级导电材料; 粘合剂; 和酶; 其中所述油墨基本上不含溶剂。 在一个实施方案中，油墨还包括介体，交联剂和底物中的至少一种。 在另一实施例中，本文提供的电极用于电池，燃料电池或传感器。