公开(公告)号：US07176049B2

公开(公告)日：2007-02-13

申请号：US10845589

申请日：2004-05-14

申请人： Gyoung Ho Buh ,  Ji-Sang Yahng ,  Yu Gyun Shin ,  Guk-Hyon Yon ,  Sangjin Hyun

发明人： Gyoung Ho Buh ,  Ji-Sang Yahng ,  Yu Gyun Shin ,  Guk-Hyon Yon ,  Sangjin Hyun

IPC分类号： H01L21/00

CPC分类号： H01L21/266 ,  H01L21/2022 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/28211 ,  H01L21/324 ,  H01L21/76232 ,  H01L21/823462 ,  H01L21/823481

摘要： A method of selectively heating a predetermined region of a semiconductor substrate includes providing a semiconductor substrate, selectively focusing a free carrier generation light on only a predetermined region of the semiconductor substrate, irradiating the free carrier generation light on the predetermined region of the semiconductor substrate to increase a free carrier concentration within the predetermined region of the semiconductor substrate, wherein the free carrier generation light causes the predetermined region to increase in temperature by less than a temperature necessary to change the solid phase of the predetermined region, and irradiating the semiconductor substrate with a heating light to selectively heat the predetermined region of the semiconductor substrate.

公开(公告)号：US07485554B2

公开(公告)日：2009-02-03

申请号：US11655916

申请日：2007-01-22

申请人： Gyoung Ho Buh ,  Ji-Sang Yahng ,  Yu Gyun Shin ,  Guk-Hyon Yon ,  Sangjin Hyun

发明人： Gyoung Ho Buh ,  Ji-Sang Yahng ,  Yu Gyun Shin ,  Guk-Hyon Yon ,  Sangjin Hyun

IPC分类号： H01L21/26 ,  H01L21/42

CPC分类号： H01L21/266 ,  H01L21/2022 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/28211 ,  H01L21/324 ,  H01L21/76232 ,  H01L21/823462 ,  H01L21/823481

摘要： A method of selectively heating a predetermined region of a semiconductor substrate includes providing a semiconductor substrate, selectively focusing a free carrier generation light on only a predetermined region of the semiconductor substrate, irradiating the free carrier generation light on the predetermined region of the semiconductor substrate to increase a free carrier concentration within the predetermined region of the semiconductor substrate, wherein the free carrier generation light causes the predetermined region to increase in temperature by less than a temperature necessary to change the solid phase of the predetermined region, and irradiating the semiconductor substrate with a heating light to selectively heat the predetermined region of the semiconductor substrate.

摘要翻译： 选择性地加热半导体衬底的预定区域的方法包括提供半导体衬底，将仅自由载流子产生光选择性地聚焦在半导体衬底的预定区域上，将半导体衬底的预定区域上的自由载流子产生光照射到 增加半导体衬底的预定区域内的自由载流子浓度，其中自由载流子产生光使预定区域的温度升高小于改变预定区域的固相所需的温度，并且将半导体衬底照射 加热光，以选择性地加热半导体衬底的预定区域。

公开(公告)号：US07514744B2

公开(公告)日：2009-04-07

申请号：US11322335

申请日：2005-12-30

申请人： Gyoung-Ho Buh ,  Yu-Gyun Shin ,  Soo-Jin Hong ,  Guk-Hyon Yon

发明人： Gyoung-Ho Buh ,  Yu-Gyun Shin ,  Soo-Jin Hong ,  Guk-Hyon Yon

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/4983 ,  H01L21/28247 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7881 ,  H01L29/792

摘要： A semiconductor device includes a gate structure on a channel region of a semiconductor substrate adjacent to a source/drain region therein and a surface insulation layer directly on the source/drain region of the substrate adjacent to the gate structure. The device further includes a spacer on a sidewall of the gate structure adjacent to the source/drain region. A portion of the surface insulation layer adjacent the gate structure is sandwiched between the substrate and the spacer. An interface between the surface insulation layer and the source/drain region includes a plurality of interfacial states. Portions of the source/drain region immediately adjacent the interface define a carrier accumulation layer having a greater carrier concentration than other portions thereof. The carrier accumulation layer extends along the interface under the spacer. Related methods are also discussed.

摘要翻译： 半导体器件包括与半导体衬底的与源极/漏极区域相邻的沟道区域上的栅极结构，以及直接位于与栅极结构相邻的衬底的源极/漏极区域上的表面绝缘层。 该器件还包括邻近源极/漏极区的栅极结构的侧壁上的间隔物。 与栅极结构相邻的表面绝缘层的一部分夹在基板和间隔件之间。 表面绝缘层与源极/漏极区之间的界面包括多个界面状态。 紧邻界面的源极/漏极区域的部分限定了具有比其它部分更大的载流子浓度的载流子积累层。 载体积聚层沿着间隔物下的界面延伸。 还讨论了相关方法。

公开(公告)号：US20060249760A1

公开(公告)日：2006-11-09

申请号：US11379206

申请日：2006-04-18

申请人： Gyoung-Ho Buh ,  Yu-Gyun Shin ,  Tai-Su Park ,  Jin-Wook LEE ,  Guk-Hyon Yon

发明人： Gyoung-Ho Buh ,  Yu-Gyun Shin ,  Tai-Su Park ,  Jin-Wook LEE ,  Guk-Hyon Yon

IPC分类号： H01L29/772 ,  H01L21/336

CPC分类号： H01L29/1045 ,  H01L29/66659 ,  H01L29/78

摘要： There are provided a high-voltage transistor and a method of forming the same. A channel region of the high-voltage transistor includes a first region and a second region. The first region has high impurity concentration that is higher than that of the second region. In addition, the first region may be in contact with the isolation layer. Thus, it is possible to enhance leakage current characteristics of the high-voltage transistor.

摘要翻译： 提供了高压晶体管及其形成方法。 高压晶体管的沟道区域包括第一区域和第二区域。 第一区域的杂质浓度高于第二区域。 此外，第一区域可以与隔离层接触。 因此，可以提高高压晶体管的漏电流特性。

公开(公告)号：US07492006B2

公开(公告)日：2009-02-17

申请号：US11215217

申请日：2005-08-30

申请人： Gyoung-Ho Buh ,  Yu-Gyun Shin ,  Sang-Jin Hyun ,  Guk-Hyon Yon

发明人： Gyoung-Ho Buh ,  Yu-Gyun Shin ,  Sang-Jin Hyun ,  Guk-Hyon Yon

IPC分类号： H01L23/62

CPC分类号： H01L29/4983 ,  H01L21/28194 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78 ,  H01L29/7881 ,  H01L29/792

摘要： Semiconductor devices having a transistor and methods of fabricating such devices are disclosed. The device may include a gate pattern formed on a substrate, spacers formed on sidewalls of the gate pattern, a surface insulation layer that may contact the substrate is interposed between the spacers and the substrate. An inversion layer is provided in the surface region of the substrate under the surface insulation layer. The surface insulation layer is formed of a material generating large quantities of surface states at an interface between the substrate and the surface insulation layer.

摘要翻译： 公开了具有晶体管的半导体器件及其制造方法。 器件可以包括形成在衬底上的栅极图案，形成在栅极图案的侧壁上的间隔物，可以接触衬底的表面绝缘层插入在衬垫和衬底之间。 在表面绝缘层下方的基板的表面区域设置反转层。 表面绝缘层由在基板和表面绝缘层之间的界面处产生大量表面状态的材料形成。

公开(公告)号：US20060138478A1

公开(公告)日：2006-06-29

申请号：US11318827

申请日：2005-12-27

申请人： Gyoung-Ho Buh ,  Yu-Gyun Shin ,  Chang-Woo Ryoo ,  Soo-Jin Hong ,  Jin-Wook Lee ,  Guk-Hyon Yon

发明人： Gyoung-Ho Buh ,  Yu-Gyun Shin ,  Chang-Woo Ryoo ,  Soo-Jin Hong ,  Jin-Wook Lee ,  Guk-Hyon Yon

IPC分类号： H01L29/76 ,  H01L29/788 ,  H01L29/94

CPC分类号： H01L21/26506 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/6659 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/78 ,  H01L29/7833 ,  H01L29/7881

摘要： A semiconductor device includes a gate pattern disposed on a semiconductor substrate, a gate spacer disposed on both sidewalls of the gate pattern, and a fixed charge layer disposed in the semiconductor substrate below the gate spacer. Elements generating fixed charges are injected into the fixed charge layer. A layer in which carriers induced by the fixed charge layer are accumulated is disposed below the fixed charge layer. The elements are segregated to a substrate of the semiconductor substrate from the inside of the semiconductor substrate by heat.

摘要翻译： 半导体器件包括设置在半导体衬底上的栅极图案，设置在栅极图案的两个侧壁上的栅极隔离物和设置在栅极间隔物下方的半导体衬底中的固定电荷层。 产生固定电荷的元件被注入到固定电荷层中。 由固定电荷层感应的载流子被累积的层设置在固定电荷层的下方。 元件通过加热从半导体衬底的内部分离到半导体衬底的衬底。

公开(公告)号：US20060060929A1

公开(公告)日：2006-03-23

申请号：US11215217

申请日：2005-08-30

申请人： Gyoung-Ho Buh ,  Yu-Gyun Shin ,  Sang-Yin Hyun ,  Guk-Hyon Yon

发明人： Gyoung-Ho Buh ,  Yu-Gyun Shin ,  Sang-Yin Hyun ,  Guk-Hyon Yon

IPC分类号： H01L29/94 ,  H01L29/76

CPC分类号： H01L29/4983 ,  H01L21/28194 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78 ,  H01L29/7881 ,  H01L29/792

摘要： Semiconductor devices having a transistor and methods of fabricating such devices are disclosed. The device may include a gate pattern formed on a substrate, spacers formed on sidewalls of the gate pattern, a surface insulation layer that may contact the substrate is interposed between the spacers and the substrate. An inversion layer is provided in the surface region of the substrate under the surface insulation layer. The surface insulation layer is formed of a material generating large quantities of surface states at an interface between the substrate and the surface insulation layer.

公开(公告)号：US20060145254A1

公开(公告)日：2006-07-06

申请号：US11322335

申请日：2005-12-30

申请人： Gyoung-Ho Buh ,  Yu-Gyun Shin ,  Soo-Jin Hong ,  Guk-Hyon Yon

发明人： Gyoung-Ho Buh ,  Yu-Gyun Shin ,  Soo-Jin Hong ,  Guk-Hyon Yon

IPC分类号： H01L29/76

CPC分类号： H01L29/4983 ,  H01L21/28247 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7881 ,  H01L29/792

摘要： A semiconductor device includes a gate structure on a channel region of a semiconductor substrate adjacent to a source/drain region therein and a surface insulation layer directly on the source/drain region of the substrate adjacent to the gate structure. The device further includes a spacer on a sidewall of the gate structure adjacent to the source/drain region. A portion of the surface insulation layer adjacent the gate structure is sandwiched between the substrate and the spacer. An interface between the surface insulation layer and the source/drain region includes a plurality of interfacial states. Portions of the source/drain region immediately adjacent the interface define a carrier accumulation layer having a greater carrier concentration than other portions thereof. The carrier accumulation layer extends along the interface under the spacer. Related methods are also discussed.

摘要翻译： 半导体器件包括与半导体衬底的与源极/漏极区域相邻的沟道区域上的栅极结构，以及直接位于与栅极结构相邻的衬底的源极/漏极区域上的表面绝缘层。 该器件还包括邻近源极/漏极区的栅极结构的侧壁上的间隔物。 与栅极结构相邻的表面绝缘层的一部分夹在基板和间隔件之间。 表面绝缘层与源极/漏极区之间的界面包括多个界面状态。 紧邻界面的源极/漏极区域的部分限定了具有比其它部分更大的载流子浓度的载流子积累层。 载体积聚层沿着间隔物下的界面延伸。 还讨论了相关方法。

公开(公告)号：US20070117250A1

公开(公告)日：2007-05-24

申请号：US11655916

申请日：2007-01-22

申请人： Gyoung Buh ,  Ji-Sang Yahng ,  Yu Shin ,  Guk-Hyon Yon ,  Sangjin Hyun

发明人： Gyoung Buh ,  Ji-Sang Yahng ,  Yu Shin ,  Guk-Hyon Yon ,  Sangjin Hyun

IPC分类号： H01L21/00

CPC分类号： H01L21/266 ,  H01L21/2022 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/28211 ,  H01L21/324 ,  H01L21/76232 ,  H01L21/823462 ,  H01L21/823481

摘要： A method of selectively heating a predetermined region of a semiconductor substrate includes providing a semiconductor substrate, selectively focusing a free carrier generation light on only a predetermined region of the semiconductor substrate, irradiating the free carrier generation light on the predetermined region of the semiconductor substrate to increase a free carrier concentration within the predetermined region of the semiconductor substrate, wherein the free carrier generation light causes the predetermined region to increase in temperature by less than a temperature necessary to change the solid phase of the predetermined region, and irradiating the semiconductor substrate with a heating light to selectively heat the predetermined region of the semiconductor substrate.

摘要翻译： 选择性地加热半导体衬底的预定区域的方法包括提供半导体衬底，将仅自由载流子产生光选择性地聚焦在半导体衬底的预定区域上，将半导体衬底的预定区域上的自由载流子产生光照射到 增加半导体衬底的预定区域内的自由载流子浓度，其中自由载流子产生光使预定区域的温度升高小于改变预定区域的固相所需的温度，并且将半导体衬底照射 加热光，以选择性地加热半导体衬底的预定区域。

公开(公告)号：US20050062175A1

公开(公告)日：2005-03-24

申请号：US10845589

申请日：2004-05-14

申请人： Gyoung Buh ,  Ji-Sang Yahng ,  Yu Shin ,  Guk-Hyon Yon ,  Sangjin Hyun

发明人： Gyoung Buh ,  Ji-Sang Yahng ,  Yu Shin ,  Guk-Hyon Yon ,  Sangjin Hyun

IPC分类号： H01L21/20 ,  H01L21/265 ,  H01L21/266 ,  H01L21/268 ,  H01L21/28 ,  H01L21/324 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/76

CPC分类号： H01L21/266 ,  H01L21/2022 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/28211 ,  H01L21/324 ,  H01L21/76232 ,  H01L21/823462 ,  H01L21/823481

摘要： A method of selectively heating a predetermined region of a semiconductor substrate includes providing a semiconductor substrate, selectively focusing a free carrier generation light on only a predetermined region of the semiconductor substrate, irradiating the free carrier generation light on the predetermined region of the semiconductor substrate to increase a free carrier concentration within the predetermined region of the semiconductor substrate, wherein the free carrier generation light causes the predetermined region to increase in temperature by less than a temperature necessary to change the solid phase of the predetermined region, and irradiating the semiconductor substrate with a heating light to selectively heat the predetermined region of the semiconductor substrate.

摘要翻译： 选择性地加热半导体衬底的预定区域的方法包括提供半导体衬底，将仅自由载流子产生光选择性地聚焦在半导体衬底的预定区域上，将半导体衬底的预定区域上的自由载流子产生光照射到 增加半导体衬底的预定区域内的自由载流子浓度，其中自由载流子产生光使预定区域的温度升高小于改变预定区域的固相所需的温度，并且将半导体衬底照射 加热光，以选择性地加热半导体衬底的预定区域。