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    Active Device Array Substrate and Manufacturing Method Thereof
    1.
    发明申请
    Active Device Array Substrate and Manufacturing Method Thereof 有权
    有源器件阵列基板及其制造方法

    公开(公告)号：US20140084291A1

    公开(公告)日：2014-03-27

    申请号：US13625949

    申请日：2012-09-25

    申请人： Jia-Hong YE ,  Ssu-Hui Lu ,  Wu-Hsiung Lin ,  Chao-Chien Chiu ,  Ming-Hsien Lee ,  Chia-Tien Peng ,  Wei-Ming Huang

    发明人： Jia-Hong YE ,  Ssu-Hui Lu ,  Wu-Hsiung Lin ,  Chao-Chien Chiu ,  Ming-Hsien Lee ,  Chia-Tien Peng ,  Wei-Ming Huang

    IPC分类号： H01L29/04 ,  H01L21/336 ,  H01L29/786

    CPC分类号： H01L27/1255 ,  H01L27/1218 ,  H01L27/1248 ,  H01L29/78603

    摘要： An active device array substrate includes a flexible substrate, a gate electrode, a dielectric layer, a channel layer, a source electrode, a drain electrode, and a pixel electrode. The flexible substrate has at least one transistor region and at least one transparent region adjacent to each other. The gate electrode is disposed on the transistor region of the flexible substrate. The dielectric layer covers the flexible substrate and the gate electrode. A portion of the dielectric layer disposed on the gate electrode has a first thickness. Another portion of the dielectric layer disposed on the transparent region of the flexible substrate has a second thickness. The second thickness is less than the first thickness. The channel layer is disposed above the gate electrode. The source electrode and the drain electrode are disposed on opposite sides of the channel layer and are electrically connected to the channel layer.

    摘要翻译： 有源器件阵列衬底包括柔性衬底，栅电极，电介质层，沟道层，源电极，漏电极和像素电极。 柔性基板具有至少一个晶体管区域和至少一个彼此相邻的透明区域。 栅电极设置在柔性基板的晶体管区域上。 电介质层覆盖柔性基板和栅电极。 布置在栅电极上的介电层的一部分具有第一厚度。 设置在柔性基板的透明区域上的介电层的另一部分具有第二厚度。 第二厚度小于第一厚度。 沟道层设置在栅电极的上方。 源电极和漏极设置在沟道层的相对侧上并且电连接到沟道层。

    OLED TOUCH PANEL AND METHOD OF FORMING THE SAME
    2.
    发明申请
    OLED TOUCH PANEL AND METHOD OF FORMING THE SAME 有权
    OLED触摸屏及其形成方法

    公开(公告)号：US20110037729A1

    公开(公告)日：2011-02-17

    申请号：US12717938

    申请日：2010-03-04

    申请人： An-Thung Cho ,  Jung-Yen Huang ,  Chia-Tien Peng ,  Chun-Hsiun Chen ,  Wei-Ming Huang

    发明人： An-Thung Cho ,  Jung-Yen Huang ,  Chia-Tien Peng ,  Chun-Hsiun Chen ,  Wei-Ming Huang

    IPC分类号： G06F3/042 ,  H01L21/00 ,  H01L33/16

    CPC分类号： G06F3/0412 ,  G06F3/042 ,  G06F2203/04108 ,  H01L27/323

    摘要： A displaying region and a sensing region are defined in each pixel region of the OLED touch panel of the present invention. The readout thin film transistor of the sensing region is formed by the same processes with the drive thin film transistor of the displaying region. The top and bottom electrodes of the optical sensor are formed by the same processes with the top and bottom electrodes of the OLED. Accordingly, the present invention can just add a step of forming the patterned sensing dielectric layer to the processes of forming an OLED panel to integrate the optical sensor into the pixel region of the OLED panel. Thus, an OLED touch panel is formed.

    摘要翻译： 在本发明的OLED触摸面板的每个像素区域中限定显示区域和感测区域。 感测区域的读出薄膜晶体管通过与显示区域的驱动薄膜晶体管相同的工艺形成。 光学传感器的顶部和底部电极通过与OLED的顶部和底部电极相同的工艺形成。 因此，本发明可以仅添加形成图案化的感测电介质层的步骤，以形成OLED面板以将光学传感器集成到OLED面板的像素区域中的过程。 因此，形成OLED触摸面板。

    OLED touch panel and method of forming the same
    4.
    发明授权
    OLED touch panel and method of forming the same 有权
    OLED触摸面板及其形成方法

    公开(公告)号：US08772075B2

    公开(公告)日：2014-07-08

    申请号：US12717938

    申请日：2010-03-04

    申请人： An-Thung Cho ,  Jung-Yen Huang ,  Chia-Tien Peng ,  Chun-Hsiun Chen ,  Wei-Ming Huang

    发明人： An-Thung Cho ,  Jung-Yen Huang ,  Chia-Tien Peng ,  Chun-Hsiun Chen ,  Wei-Ming Huang

    IPC分类号： H01L21/00

    CPC分类号： G06F3/0412 ,  G06F3/042 ,  G06F2203/04108 ,  H01L27/323

    摘要： A display region and a light sensing region are defined in each pixel region of the OLED touch panel of the present invention. The readout thin film transistor of the light sensing region is formed by the same processes with the drive thin film transistor of the display region. The top and bottom electrodes of the optical sensor are formed by the same processes with the top and bottom electrodes of the OLED. Accordingly, the present invention can just add a step of forming the patterned sensing dielectric layer to the processes of forming an OLED panel to integrate the optical sensor into the pixel region of the OLED panel. Thus, an OLED touch panel is formed.

    摘要翻译： 在本发明的OLED触摸面板的每个像素区域中限定显示区域和感光区域。 光检测区域的读出薄膜晶体管通过与显示区域的驱动薄膜晶体管相同的处理形成。 光学传感器的顶部和底部电极通过与OLED的顶部和底部电极相同的工艺形成。 因此，本发明可以仅添加形成图案化的感测电介质层的步骤，以形成OLED面板以将光学传感器集成到OLED面板的像素区域中的过程。 因此，形成OLED触摸面板。

    Thin film transistor array substrate, display panel, liquid crystal display apparatus and manufacturing method thereof
    6.
    发明授权
    Thin film transistor array substrate, display panel, liquid crystal display apparatus and manufacturing method thereof 有权
    薄膜晶体管阵列基板，显示面板，液晶显示装置及其制造方法

    公开(公告)号：US08553186B2

    公开(公告)日：2013-10-08

    申请号：US12571449

    申请日：2009-10-01

    申请人： An-Thung Cho ,  Chia-Tien Peng ,  Wan-Yi Liu ,  Chun-Hsiun Chen ,  Wei-Ming Huang

    发明人： An-Thung Cho ,  Chia-Tien Peng ,  Wan-Yi Liu ,  Chun-Hsiun Chen ,  Wei-Ming Huang

    IPC分类号： G02F1/133

    CPC分类号： H01L27/1214 ,  G02F1/1362 ,  G02F2001/13324 ,  G02F2202/36 ,  G09G3/3611 ,  G09G2330/02 ,  G09G2360/144 ,  H01L27/1259 ,  H01L29/78621

    摘要： A display panel having a pixel region and a sensing region includes a first substrate, a second substrate and a display medium layer. A plurality of pixel structures and at least one photo-voltaic cell device are disposed on the first substrate. The pixel structures are arranged in the pixel region in array, and each of the pixel structures includes a thin film transistor and a pixel electrode electrically connected to the thin film transistor. The photo-voltaic cell device disposed in the sensing region includes a doped semiconductor layer, a transparent electrode layer, a first type doped silicon-rich dielectric layer and a second type doped silicon-rich dielectric layer. The first type doped silicon-rich dielectric layer and the second type doped silicon-rich dielectric layer are disposed between the doped semiconductor layer and the transparent electrode layer. The display medium layer is disposed between the first substrate and the second substrate.

    摘要翻译： 具有像素区域和感测区域的显示面板包括第一基板，第二基板和显示介质层。 多个像素结构和至少一个光电池单元设置在第一基板上。 像素结构被布置在阵列中的像素区域中，并且每个像素结构包括薄膜晶体管和电连接到薄膜晶体管的像素电极。 设置在感测区域中的光伏电池器件包括掺杂半导体层，透明电极层，第一类掺杂富硅介电层和第二掺杂富硅介电层。 第一类掺杂富硅介电层和第二掺杂富硅介电层设置在掺杂半导体层和透明电极层之间。 显示介质层设置在第一基板和第二基板之间。

    THIN FILM TRANSISTOR ARRAY SUBSTRATE, DISPLAY PANEL, LIQUID CRYSTAL DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF
    8.
    发明申请
    THIN FILM TRANSISTOR ARRAY SUBSTRATE, DISPLAY PANEL, LIQUID CRYSTAL DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF 有权
    薄膜晶体管阵列基板，显示面板，液晶显示装置及其制造方法

    公开(公告)号：US20100315580A1

    公开(公告)日：2010-12-16

    申请号：US12571449

    申请日：2009-10-01

    申请人： An-Thung Cho ,  Chia-Tien Peng ,  Wan-Yi Liu ,  Chun-Hsiun Chen ,  Wei-Ming Huang

    发明人： An-Thung Cho ,  Chia-Tien Peng ,  Wan-Yi Liu ,  Chun-Hsiun Chen ,  Wei-Ming Huang

    IPC分类号： G02F1/133 ,  H01L21/77

    CPC分类号： H01L27/1214 ,  G02F1/1362 ,  G02F2001/13324 ,  G02F2202/36 ,  G09G3/3611 ,  G09G2330/02 ,  G09G2360/144 ,  H01L27/1259 ,  H01L29/78621

    摘要： A display panel having a pixel region and a sensing region includes a first substrate, a second substrate and a display medium layer. A plurality of pixel structures and at least one photo-voltaic cell device are disposed on the first substrate. The pixel structures are arranged in the pixel region in array, and each of the pixel structures includes a thin film transistor and a pixel electrode electrically connected to the thin film transistor. The photo-voltaic cell device disposed in the sensing region includes a doped semiconductor layer, a transparent electrode layer, a first type doped silicon-rich dielectric layer and a second type doped silicon-rich dielectric layer. The first type doped silicon-rich dielectric layer and the second type doped silicon-rich dielectric layer are disposed between the doped semiconductor layer and the transparent electrode layer. The display medium layer is disposed between the first substrate and the second substrate.

    摘要翻译： 具有像素区域和感测区域的显示面板包括第一基板，第二基板和显示介质层。 多个像素结构和至少一个光电池单元设置在第一基板上。 像素结构被布置在阵列中的像素区域中，并且每个像素结构包括薄膜晶体管和电连接到薄膜晶体管的像素电极。 设置在感测区域中的光伏电池器件包括掺杂半导体层，透明电极层，第一类掺杂富硅介电层和第二掺杂富硅介电层。 第一类掺杂富硅介电层和第二掺杂富硅介电层设置在掺杂半导体层和透明电极层之间。 显示介质层设置在第一基板和第二基板之间。

    Thin film transistor
    9.
    发明授权
    Thin film transistor 有权
    薄膜晶体管

    公开(公告)号：US08586425B2

    公开(公告)日：2013-11-19

    申请号：US12964747

    申请日：2010-12-10

    申请人： An-Thung Cho ,  Wan-Yi Liu ,  Chia-Kai Chen ,  Wu-Hsiung Lin ,  Chun-Hsiun Chen ,  Wei-Ming Huang

    发明人： An-Thung Cho ,  Wan-Yi Liu ,  Chia-Kai Chen ,  Wu-Hsiung Lin ,  Chun-Hsiun Chen ,  Wei-Ming Huang

    IPC分类号： H01L21/00 ,  H01L21/84

    CPC分类号： H01L29/78651 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02686 ,  H01L29/66068 ,  H01L29/66969 ,  H01L29/78684 ,  H01L29/7869

    摘要： A thin film transistor disposed on a substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a silicon-rich channel layer, a source, and a drain. The gate is disposed on the substrate. The gate insulator is disposed over the gate. The silicon-rich channel layer is disposed above the gate, wherein the material of the silicon-rich channel layer is selected from a group consisting of silicon-rich silicon oxide (Si-rich SiOx), silicon-rich silicon nitride (Si-rich SiNx), silicon-rich silicon oxynitride (Si-rich SiOxNy), silicon-rich silicon carbide (Si-rich SiC) and silicon-rich silicon oxycarbide (Si-rich SiOC). The content (concentration) of silicon of the silicon-rich channel layer within a film depth between 10 nm to 170 nm ranges from about 1E23 atoms/cm3 to about 4E23 atoms/cm3. The source and the drain are connected with the silicon-rich channel layer.

    摘要翻译： 设置在基板上的薄膜晶体管。 薄膜晶体管包括栅极，栅极绝缘层，富硅沟道层，源极和漏极。 栅极设置在基板上。 栅极绝缘体设置在栅极上。 富硅沟道层设置在栅极上方，其中富硅沟道层的材料选自富硅氧化硅（富Si），富含硅的氮化硅（富Si） SiN x），富硅氧氮化硅（富Si的SiO x N y），富含硅的碳化硅（富Si的SiC）和富硅的碳氧化碳（富Si的SiOC）。 在10nm至170nm的膜深度内的富硅沟道层的硅含量（浓度）范围为约1E23原子/ cm3至约4E23原子/ cm3。 源极和漏极与富硅沟道层连接。

    THIN FILM TRANSISTOR
    10.
    发明申请
    THIN FILM TRANSISTOR 有权
    薄膜晶体管

    公开(公告)号：US20110156043A1

    公开(公告)日：2011-06-30

    申请号：US12964747

    申请日：2010-12-10

    申请人： An-Thung Cho ,  Wan-Yi Liu ,  Chia-Kai Chen ,  Wu-Hsiung Lin ,  Chun-Hsiun Chen ,  Wei-Ming Huang

    发明人： An-Thung Cho ,  Wan-Yi Liu ,  Chia-Kai Chen ,  Wu-Hsiung Lin ,  Chun-Hsiun Chen ,  Wei-Ming Huang

    IPC分类号： H01L29/786 ,  H01L21/268 ,  H01L21/205

    CPC分类号： H01L29/78651 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02686 ,  H01L29/66068 ,  H01L29/66969 ,  H01L29/78684 ,  H01L29/7869

    摘要： A thin film transistor disposed on a substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a silicon-rich channel layer, a source, and a drain. The gate is disposed on the substrate. The gate insulator is disposed over the gate. The silicon-rich channel layer is disposed above the gate, wherein the material of the silicon-rich channel layer is selected from a group consisting of silicon-rich silicon oxide (Si-rich SiOx), silicon-rich silicon nitride (Si-rich SiNx), silicon-rich silicon oxynitride (Si-rich SiOxNy), silicon-rich silicon carbide (Si-rich SiC) and silicon-rich silicon oxycarbide (Si-rich SiOC). The content (concentration) of silicon of the silicon-rich channel layer within a film depth between 10 nm to 170 nm ranges from about 1E23 atoms/cm3 to about 4E23 atoms/cm3. The source and the drain are connected with the silicon-rich channel layer.

    摘要翻译： 设置在基板上的薄膜晶体管。 薄膜晶体管包括栅极，栅极绝缘层，富硅沟道层，源极和漏极。 栅极设置在基板上。 栅极绝缘体设置在栅极上。 富硅沟道层设置在栅极上方，其中富硅沟道层的材料选自富硅氧化硅（富Si），富含硅的氮化硅（富Si） SiN x），富硅氧氮化硅（富Si的SiO x N y），富含硅的碳化硅（富Si的SiC）和富硅的碳氧化碳（富Si的SiOC）。 在10nm至170nm的膜深度内的富硅沟道层的硅含量（浓度）范围为约1E23原子/ cm3至约4E23原子/ cm3。 源极和漏极与富硅沟道层连接。