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    LENS HEATING COMPENSATION IN PHOTOLITHOGRAPHY
    1.
    发明申请
    LENS HEATING COMPENSATION IN PHOTOLITHOGRAPHY 有权
    透镜加热补偿

    公开(公告)号：US20120038895A1

    公开(公告)日：2012-02-16

    申请号：US12857316

    申请日：2010-08-16

    申请人： Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton deVilliers ,  Michael Hyatt ,  Jianming Zhou ,  Scott Light ,  Dan Millward

    发明人： Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton deVilliers ,  Michael Hyatt ,  Jianming Zhou ,  Scott Light ,  Dan Millward

    IPC分类号： G03B27/54 ,  G03B27/32

    CPC分类号： G03F7/70116 ,  G03F7/70891

    摘要： Photolithographic apparatus and methods are disclosed. One such apparatus includes an optical path configured to provide a first diffraction pattern in a portion of an optical system and to provide a second diffraction pattern to the portion of the optical system after providing the first diffraction pattern. Meanwhile, one such method includes providing a first diffraction pattern onto a portion of an optical system, wherein a semiconductor article is imaged using the first diffraction pattern. A second diffraction pattern is also provided onto the portion of the optical system, but the second diffraction pattern is not used to image the semiconductor article.

    摘要翻译： 公开了光刻设备和方法。 一种这样的设备包括光路，其被配置为在光学系统的一部分中提供第一衍射图案，并且在提供第一衍射图案之后，向光学系统的部分提供第二衍射图案。 同时，一种这样的方法包括在光学系统的一部分上提供第一衍射图案，其中半导体制品使用第一衍射图案成像。 第二衍射图案也提供到光学系统的部分上，但是第二衍射图案不用于对半导体制品进行成像。

    Lens heating compensation in photolithography
    2.
    发明授权
    Lens heating compensation in photolithography 有权
    光刻镜头加热补偿

    公开(公告)号：US09235134B2

    公开(公告)日：2016-01-12

    申请号：US12857316

    申请日：2010-08-16

    申请人： Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton deVilliers ,  Michael Hyatt ,  Jianming Zhou ,  Scott Light ,  Dan Millward

    发明人： Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton deVilliers ,  Michael Hyatt ,  Jianming Zhou ,  Scott Light ,  Dan Millward

    IPC分类号： G03B27/42 ,  G03F7/20

    CPC分类号： G03F7/70116 ,  G03F7/70891

    摘要： Photolithographic apparatus and methods are disclosed. One such apparatus includes an optical path configured to provide a first diffraction pattern in a portion of an optical system and to provide a second diffraction pattern to the portion of the optical system after providing the first diffraction pattern. Meanwhile, one such method includes providing a first diffraction pattern onto a portion of an optical system, wherein a semiconductor article is imaged using the first diffraction pattern. A second diffraction pattern is also provided onto the portion of the optical system, but the second diffraction pattern is not used to image the semiconductor article.

    摘要翻译： 公开了光刻设备和方法。 一种这样的设备包括光路，其被配置为在光学系统的一部分中提供第一衍射图案，并且在提供第一衍射图案之后，向光学系统的部分提供第二衍射图案。 同时，一种这样的方法包括在光学系统的一部分上提供第一衍射图案，其中半导体制品使用第一衍射图案成像。 第二衍射图案也提供到光学系统的部分上，但是第二衍射图案不用于对半导体制品进行成像。

    Semiconductor constructions and methods of forming patterns
    6.
    发明授权
    Semiconductor constructions and methods of forming patterns 有权
    半导体结构和形成图案的方法

    公开(公告)号：US08486611B2

    公开(公告)日：2013-07-16

    申请号：US12836495

    申请日：2010-07-14

    申请人： Dan Millward ,  Kaveri Jain ,  Zishu Zhang ,  Lijing Gou ,  Anton de Villiers ,  Jianming Zhou ,  Yuan He ,  Michael Hyatt ,  Scott L. Light

    发明人： Dan Millward ,  Kaveri Jain ,  Zishu Zhang ,  Lijing Gou ,  Anton de Villiers ,  Jianming Zhou ,  Yuan He ,  Michael Hyatt ,  Scott L. Light

    IPC分类号： G03F7/26

    CPC分类号： H01L21/76879 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10882 ,  H01L27/10888

    摘要： Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.

    摘要翻译： 一些实施例包括形成图案的方法。 半导体衬底被形成为在一组导电结构之上包括电绝缘材料。 跨导电结构限定互连区域，并且互连区域的相对侧上的区域被定义为次级区域。 特征的二维阵列形成在电绝缘材料上。 二维阵列跨越互连区域并跨越次级区域延伸。 二维阵列的图案通过互连区域的电绝缘材料转移以形成延伸穿过电绝缘材料和导电结构的接触开口，并且二次区域的二维阵列的任何部分 被转移到电绝缘材料中。

    Semiconductor Constructions And Methods Of Forming Patterns
    8.
    发明申请
    Semiconductor Constructions And Methods Of Forming Patterns 有权
    半导体结构和形成方式

    公开(公告)号：US20120015486A1

    公开(公告)日：2012-01-19

    申请号：US12836495

    申请日：2010-07-14

    申请人： Dan Millward ,  Kaveri Jain ,  Zishu Zhang ,  Lijing Gou ,  Anton de Villiers ,  Jianming Zhou ,  Yuan He ,  Michael Hyatt ,  Scott L. Light

    发明人： Dan Millward ,  Kaveri Jain ,  Zishu Zhang ,  Lijing Gou ,  Anton de Villiers ,  Jianming Zhou ,  Yuan He ,  Michael Hyatt ,  Scott L. Light

    IPC分类号： H01L21/768 ,  H01L21/82

    CPC分类号： H01L21/76879 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10882 ,  H01L27/10888

    摘要： Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.

    摘要翻译： 一些实施例包括形成图案的方法。 半导体衬底被形成为在一组导电结构之上包括电绝缘材料。 跨导电结构限定互连区域，并且互连区域的相对侧上的区域被定义为次级区域。 特征的二维阵列形成在电绝缘材料上。 二维阵列跨越互连区域并跨越次级区域延伸。 二维阵列的图案通过互连区域的电绝缘材料转移以形成延伸穿过电绝缘材料和导电结构的接触开口，并且二次区域的二维阵列的任何部分 被转移到电绝缘材料中。