公开(公告)号：US20120038895A1

公开(公告)日：2012-02-16

申请号：US12857316

申请日：2010-08-16

申请人： Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton deVilliers ,  Michael Hyatt ,  Jianming Zhou ,  Scott Light ,  Dan Millward

发明人： Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton deVilliers ,  Michael Hyatt ,  Jianming Zhou ,  Scott Light ,  Dan Millward

IPC分类号： G03B27/54 ,  G03B27/32

CPC分类号： G03F7/70116 ,  G03F7/70891

摘要： Photolithographic apparatus and methods are disclosed. One such apparatus includes an optical path configured to provide a first diffraction pattern in a portion of an optical system and to provide a second diffraction pattern to the portion of the optical system after providing the first diffraction pattern. Meanwhile, one such method includes providing a first diffraction pattern onto a portion of an optical system, wherein a semiconductor article is imaged using the first diffraction pattern. A second diffraction pattern is also provided onto the portion of the optical system, but the second diffraction pattern is not used to image the semiconductor article.

摘要翻译： 公开了光刻设备和方法。 一种这样的设备包括光路，其被配置为在光学系统的一部分中提供第一衍射图案，并且在提供第一衍射图案之后，向光学系统的部分提供第二衍射图案。 同时，一种这样的方法包括在光学系统的一部分上提供第一衍射图案，其中半导体制品使用第一衍射图案成像。 第二衍射图案也提供到光学系统的部分上，但是第二衍射图案不用于对半导体制品进行成像。

公开(公告)号：US09235134B2

公开(公告)日：2016-01-12

申请号：US12857316

申请日：2010-08-16

申请人： Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton deVilliers ,  Michael Hyatt ,  Jianming Zhou ,  Scott Light ,  Dan Millward

发明人： Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton deVilliers ,  Michael Hyatt ,  Jianming Zhou ,  Scott Light ,  Dan Millward

IPC分类号： G03B27/42 ,  G03F7/20

CPC分类号： G03F7/70116 ,  G03F7/70891

摘要： Photolithographic apparatus and methods are disclosed. One such apparatus includes an optical path configured to provide a first diffraction pattern in a portion of an optical system and to provide a second diffraction pattern to the portion of the optical system after providing the first diffraction pattern. Meanwhile, one such method includes providing a first diffraction pattern onto a portion of an optical system, wherein a semiconductor article is imaged using the first diffraction pattern. A second diffraction pattern is also provided onto the portion of the optical system, but the second diffraction pattern is not used to image the semiconductor article.

摘要翻译： 公开了光刻设备和方法。 一种这样的设备包括光路，其被配置为在光学系统的一部分中提供第一衍射图案，并且在提供第一衍射图案之后，向光学系统的部分提供第二衍射图案。 同时，一种这样的方法包括在光学系统的一部分上提供第一衍射图案，其中半导体制品使用第一衍射图案成像。 第二衍射图案也提供到光学系统的部分上，但是第二衍射图案不用于对半导体制品进行成像。

公开(公告)号：US08625078B2

公开(公告)日：2014-01-07

申请号：US13080666

申请日：2011-04-06

申请人： Jianming Zhou ,  Scott Light ,  Dan Millward ,  Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton DeVilliers ,  Michael Hyatt

发明人： Jianming Zhou ,  Scott Light ,  Dan Millward ,  Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton DeVilliers ,  Michael Hyatt

IPC分类号： G03B27/32 ,  G03B27/52

CPC分类号： G03F7/70891 ,  G03F7/70125

摘要： A method for reducing the effects of lens heating of a lens in an imaging process includes determining heat load locations on the lens according to an illumination source and a reticle design, obtaining a lens response characterization according to the heat load locations, and utilizing the heat load locations and the lens response characterization to generate a lens heating sensitivity map.

摘要翻译： 在成像过程中减少透镜加热效果的方法包括根据照明源和掩模版设计确定透镜上的热负荷位置，根据热负荷位置获得透镜响应特性，并利用热量 加载位置和镜头响应表征以产生透镜加热灵敏度图。

公开(公告)号：US08883372B2

公开(公告)日：2014-11-11

申请号：US13489437

申请日：2012-06-05

申请人： Scott Light ,  Dan Millward ,  Anton Devilliers ,  Yuan He ,  Michael Hyatt ,  Lijing Gou ,  Kaveri Jain ,  Zishu Zhang ,  Jianming Zhou

发明人： Scott Light ,  Dan Millward ,  Anton Devilliers ,  Yuan He ,  Michael Hyatt ,  Lijing Gou ,  Kaveri Jain ,  Zishu Zhang ,  Jianming Zhou

IPC分类号： G03F1/00

CPC分类号： G03F1/50

摘要： A reticle with a composite polarizer includes: a transparent substrate; a patterned layer disposed on said transparent substrate; and a polarizing filter disposed on said transparent substrate, wherein said transparent substrate is substantially transparent with respect to illumination light, said patterned layer is partially opaque with respect to said illumination light, and said polarizing filter is capable of selectively polarizing said illumination light.

摘要翻译： 具有复合偏振片的掩模版包括：透明基板; 设置在所述透明基板上的图案层; 以及设置在所述透明基板上的偏振滤光器，其中所述透明基板相对于照明光基本上是透明的，所述图案化层相对于所述照明光部分不透明，并且所述偏振滤光片能够选择性地偏振所述照明光。

公开(公告)号：US20120178026A1

公开(公告)日：2012-07-12

申请号：US12986836

申请日：2011-01-07

申请人： Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton J. DeVilliers ,  Michael Hyatt ,  Jianming Zhou ,  Scott Light ,  Dan B. Millward

发明人： Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton J. DeVilliers ,  Michael Hyatt ,  Jianming Zhou ,  Scott Light ,  Dan B. Millward

IPC分类号： G03F7/20 ,  H05K13/00 ,  H01J40/14

CPC分类号： G03F1/38 ,  G03F1/50 ,  G03F1/54 ,  Y10T29/49002

摘要： An imaging device comprising at least one array pattern region and at least one attenuation region. A plurality of imaging features in the at least one array pattern region and a plurality of assist features in the at least one attenuation region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.

摘要翻译： 一种成像装置，包括至少一个阵列图案区域和至少一个衰减区域。 所述至少一个阵列图案区域中的多个成像特征和所述至少一个衰减区域中的多个辅助特征基本上彼此相同，并且基本上形成为间距。 还公开了形成成像装置的方法和形成半导体器件结构的方法。

公开(公告)号：US08440371B2

公开(公告)日：2013-05-14

申请号：US12986836

申请日：2011-01-07

申请人： Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton J. DeVilliers ,  Michael Hyatt ,  Jianming Zhou ,  Scott Light ,  Dan B. Millward

发明人： Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton J. DeVilliers ,  Michael Hyatt ,  Jianming Zhou ,  Scott Light ,  Dan B. Millward

IPC分类号： G03F1/36

CPC分类号： G03F1/38 ,  G03F1/50 ,  G03F1/54 ,  Y10T29/49002

摘要： An imaging device comprising at least one array pattern region and at least one attenuation region. A plurality of imaging features in the at least one array pattern region and a plurality of assist features in the at least one attenuation region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.

摘要翻译： 一种成像装置，包括至少一个阵列图案区域和至少一个衰减区域。 所述至少一个阵列图案区域中的多个成像特征和所述至少一个衰减区域中的多个辅助特征基本上彼此相同，并且基本上形成为间距。 还公开了形成成像装置的方法和形成半导体器件结构的方法。

公开(公告)号：US08507191B2

公开(公告)日：2013-08-13

申请号：US12986806

申请日：2011-01-07

申请人： Dan B. Millward ,  Yuan He ,  Lijing Gou ,  Zishu Zhang ,  Anton J. deVilliers ,  Jianming Zhou ,  Kaveri Jain ,  Scott Light ,  Michael Hyatt

发明人： Dan B. Millward ,  Yuan He ,  Lijing Gou ,  Zishu Zhang ,  Anton J. deVilliers ,  Jianming Zhou ,  Kaveri Jain ,  Scott Light ,  Michael Hyatt

IPC分类号： G03F7/26

CPC分类号： H01L21/0276 ,  G03F7/0752 ,  G03F7/091 ,  Y10T428/24802

摘要： Methods of forming a patterned, silicon-enriched developable antireflective material. One such method comprises forming a silicon-enriched developable antireflective composition. The silicon-enriched developable antireflective composition comprises a silicon-enriched polymer and a crosslinking agent. The silicon-enriched polymer and the crosslinking agent are reacted to form a silicon-enriched developable antireflective material that is insoluble and has at least one acid-sensitive moiety. A positive-tone photosensitive material, such as a positive-tone photoresist, is formed over the silicon-enriched developable antireflective material and regions thereof are exposed to radiation. The exposed regions of the positive-tone photosensitive material and underlying regions of the silicon-enriched developable antireflective material are removed. Additional methods are disclosed, as are semiconductor device structures including a silicon-enriched developable antireflective material.

摘要翻译： 形成图案化的富含硅的可显影抗反射材料的方法。 一种这样的方法包括形成富含硅的可显影抗反射组合物。 富含硅的可显影抗反射组合物包含富含硅的聚合物和交联剂。 使富含硅的聚合物和交联剂反应以形成不溶性且具有至少一个酸敏感部分的富含硅的可显影抗反射材料。 在富含硅的可显影抗反射材料上形成正色感光材料，例如正色调光致抗蚀剂，并将其区域暴露于辐射。 去除了正色感光材料的曝光区域和富含硅的可显影抗反射材料的下面的区域。 公开了另外的方法，半导体器件结构包括富含硅的可显影抗反射材料。

公开(公告)号：US20120177891A1

公开(公告)日：2012-07-12

申请号：US12986806

申请日：2011-01-07

申请人： Dan B. Millward ,  Yuan He ,  Lijing Gou ,  Zishu Zhang ,  Anton J. deVilliers ,  Jianming Zhou ,  Kaveri Jain ,  Scott Light ,  Michael Hyatt

发明人： Dan B. Millward ,  Yuan He ,  Lijing Gou ,  Zishu Zhang ,  Anton J. deVilliers ,  Jianming Zhou ,  Kaveri Jain ,  Scott Light ,  Michael Hyatt

IPC分类号： B32B3/10 ,  H01L21/306

CPC分类号： H01L21/0276 ,  G03F7/0752 ,  G03F7/091 ,  Y10T428/24802

摘要： Methods of forming a patterned, silicon-enriched developable antireflective material. One such method comprises forming a silicon-enriched developable antireflective composition. The silicon-enriched developable antireflective composition comprises a silicon-enriched polymer and a crosslinking agent. The silicon-enriched polymer and the crosslinking agent are reacted to form a silicon-enriched developable antireflective material that is insoluble and has at least one acid-sensitive moiety. A positive-tone photosensitive material, such as a positive-tone photoresist, is formed over the silicon-enriched developable antireflective material and regions thereof are exposed to radiation. The exposed regions of the positive-tone photosensitive material and underlying regions of the silicon-enriched developable antireflective material are removed. Additional methods are disclosed, as are semiconductor device structures including a silicon-enriched developable antireflective material.

摘要翻译： 形成图案化的富含硅的可显影抗反射材料的方法。 一种这样的方法包括形成富含硅的可显影抗反射组合物。 富含硅的可显影抗反射组合物包含富含硅的聚合物和交联剂。 使富含硅的聚合物和交联剂反应以形成不溶性且具有至少一个酸敏感部分的富含硅的可显影抗反射材料。 在富含硅的可显影抗反射材料上形成正色感光材料，例如正色调光致抗蚀剂，并将其区域暴露于辐射。 去除了正色感光材料的曝光区域和富含硅的可显影抗反射材料的下面的区域。 公开了另外的方法，半导体器件结构包括富含硅的可显影抗反射材料。

公开(公告)号：US09213239B2

公开(公告)日：2015-12-15

申请号：US13746543

申请日：2013-01-22

申请人： Scott Light ,  Yuan He ,  Michael A. Many ,  Michael Hyatt

发明人： Scott Light ,  Yuan He ,  Michael A. Many ,  Michael Hyatt

IPC分类号： G03F7/22 ,  G03F7/20

CPC分类号： G03F7/0035 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0758 ,  G03F7/095 ,  G03F7/2022 ,  G03F7/32 ,  G03F7/322 ,  G03F7/325 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/32139

摘要： Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.

摘要翻译： 在半导体器件结构中形成图案的方法包括：使第一感光抗蚀剂材料的外部部分脱保护，形成第二感光抗蚀剂材料，将第一和第二光敏抗蚀剂材料的部分暴露于辐射，以及去除脱保护的外部部分 第一光敏抗蚀剂材料和第一和第二光敏抗蚀剂材料的暴露部分。 附加方法包括在衬底上形成第一抗蚀剂材料以包括第一部分和相对较厚的第二部分，基本上保护第二部分的整个第一部分和外部部分，同时留下第二部分的内部保护，并且形成 在衬底上的第二抗蚀剂材料。 第二抗蚀剂材料的一部分暴露于辐射，并且去除第一和第二抗蚀剂材料的去保护和暴露部分。

公开(公告)号：US20060158631A1

公开(公告)日：2006-07-20

申请号：US11378666

申请日：2006-03-17

申请人： Ulrich Boettiger ,  Scott Light ,  William Rericha ,  Craig Hickman

发明人： Ulrich Boettiger ,  Scott Light ,  William Rericha ,  Craig Hickman

IPC分类号： G03B27/42

CPC分类号： G03F7/70333 ,  G03F7/70358

摘要： A method and apparatus for exposing a radiation-sensitive material of a microlithographic substrate to a selected radiation. The method can include directing the radiation along a radiation path in a first direction toward a reticle, passing the radiation from the reticle and to the microlithographic substrate along the radiation path in a second direction, and moving the reticle relative to the radiation path along a reticle path generally normal to the first direction. The microlithographic substrate can move relative to the radiation path along a substrate path having a first component generally parallel to the second direction, and a second component generally perpendicular to the second direction. The microlithographic substrate can move generally parallel to and generally perpendicular to the second direction in a periodic manner while the reticle moves along the reticle path to change a relative position of a focal plane of the radiation.