公开(公告)号：US20190148622A9

公开(公告)日：2019-05-16

申请号：US13737897

申请日：2013-01-09

申请人： Yiming Huai ,  Yuchen Zhou ,  Jing Zhang ,  Roger Klas Malmhall ,  Ioan Tudosa ,  Rajiv Yadav Ranjan

发明人： Yiming Huai ,  Yuchen Zhou ,  Jing Zhang ,  Roger Klas Malmhall ,  Ioan Tudosa ,  Rajiv Yadav Ranjan

IPC分类号： H01L43/02

摘要： A spin-torque transfer magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL, the second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.

公开(公告)号：US09019758B2

公开(公告)日：2015-04-28

申请号：US13225338

申请日：2011-09-02

申请人： Yiming Huai ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Yuchen Zhou ,  Roger Klas Malmhall ,  Ioan Tudosa

发明人： Yiming Huai ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Yuchen Zhou ,  Roger Klas Malmhall ,  Ioan Tudosa

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01L43/08

CPC分类号： H01L43/10 ,  B82Y40/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/302 ,  H01L27/228 ,  H01L29/66984 ,  H01L43/02 ,  H01L43/08

摘要： A spin transfer torque magnetic random access memory (STTMRAM) element includes a composite fixed layer formed on top of a substrate and a tunnel layer formed upon the fixed layer and a composite free layer formed upon the tunnel barrier layer. The magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate. The composite layers are made of multiple repeats of a bi-layer unit which consists of a non-magnetic insulating layer and magnetic layer with thicknesses adjusted in a range that makes the magnetization having a preferred direction perpendicular to film plane.

摘要翻译： 自旋传递转矩磁随机存取存储器（STTMRAM）元件包括形成在衬底上的复合固定层和形成在固定层上的隧道层和形成在隧道势垒层上的复合自由层。 复合自由层和固定层中的每一个的磁化方向基本上垂直于衬底的平面。 复合层由双层单元的多个重复构成，该双层单元由非磁性绝缘层和厚度调节在使磁化具有与膜平面垂直的优选方向的范围内的磁性层组成。

公开(公告)号：US08565010B2

公开(公告)日：2013-10-22

申请号：US13099321

申请日：2011-05-02

申请人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan ,  Jing Zhang

发明人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan ,  Jing Zhang

IPC分类号： G11C11/15

CPC分类号： G11C11/16 ,  G11C11/161 ,  H01L43/02

摘要： A spin toque transfer magnetic random access memory (STTMRAM) element comprises a reference layer formed on a substrate, with a fixed perpendicular magnetic component. A junction layer is formed on top of the reference layer and a free layer is formed on top of the junction layer with a perpendicular magnetic orientation, at substantially its center of the free layer and switchable. A spacer layer is formed on top of the free layer and a fixed layer is formed on top of the spacer layer, the fixed layer has a fixed perpendicular magnetic component opposite to that of the reference layer. The magnetic orientation of the free layer switches relative to that of the fixed layer. The perpendicular magnetic components of the fixed layer and the reference layer substantially cancel each other and the free layer has an in-plane edge magnetization field.

摘要翻译： 自旋转矩磁性随机存取存储器（STTMRAM）元件包括形成在基板上的参考层，具有固定的垂直磁性分量。 接合层形成在参考层的顶部，并且在接合层的顶部上以自由层的大致中心位置处具有垂直磁性取向形成自由层。 间隔层形成在自由层的顶部，固定层形成在间隔层的顶部，固定层具有与基准层相反的固定的垂直磁性部件。 自由层的磁性取向相对于固定层的磁性取向。 固定层和参考层的垂直磁性分量基本相互抵消，自由层具有面内边缘磁化场。

公开(公告)号：US08492860B2

公开(公告)日：2013-07-23

申请号：US13289372

申请日：2011-11-04

申请人： Yuchen Zhou ,  Yiming Huai ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Roger Klas Malmhall

发明人： Yuchen Zhou ,  Yiming Huai ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Roger Klas Malmhall

IPC分类号： H01L29/82

CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08 ,  H01L43/10

摘要： A STTMRAM element includes a magnetization layer made of a first free layer and a second free layer, separated by a non-magnetic separation layer (NMSL), with the first and second free layers each having in-plane magnetizations that act on each other through anti-parallel coupling. The direction of the magnetization of the first and second free layers each is in-plane prior to the application of electrical current to the STTMRAM element and thereafter, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued to the STTMRAM element, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.

摘要翻译： STTMRAM元件包括由非磁性分离层（NMSL）隔开的由第一自由层和第二自由层制成的磁化层，第一和第二自由层各自具有彼此作用的面内磁化 反平行耦合。 在向STTMRAM元件施加电流之前，第一自由层和第二自由层的磁化方向各自在同一平面内，此后，第二自由层的磁化方向基本上标称为平面外，并且 第一自由层开关的磁化方向。 当电流停止到STTMRAM元件时，第二自由层的磁化方向保持在与第一自由层基本相反的方向上。

公开(公告)号：US08574928B2

公开(公告)日：2013-11-05

申请号：US13443818

申请日：2012-04-10

申请人： Kimihiro Satoh ,  Yiming Huai ,  Yuchen Zhou ,  Jing Zhang ,  Dong Ha Jung ,  Ebrahim Abedifard ,  Rajiv Yadav Ranjan ,  Parviz Keshtbod

发明人： Kimihiro Satoh ,  Yiming Huai ,  Yuchen Zhou ,  Jing Zhang ,  Dong Ha Jung ,  Ebrahim Abedifard ,  Rajiv Yadav Ranjan ,  Parviz Keshtbod

IPC分类号： H01L21/00

CPC分类号： H01L27/222 ,  H01L43/12

摘要： Fabrication methods for MRAM are described wherein any re-deposited metal on the sidewalls of the memory element pillars is cleaned before the interconnection process is begun. In embodiments the pillars are first fabricated, then a dielectric material is deposited on the pillars over the re-deposited metal on the sidewalls. The dielectric material substantially covers any exposed metal and therefore reduces sources of re-deposition during subsequent etching. Etching is then performed to remove the dielectric material from the top electrode and the sidewalls of the pillars down to at least the bottom edge of the barrier. The result is that the previously re-deposited metal that could result in an electrical short on the sidewalls of the barrier is removed. Various embodiments of the invention include ways of enhancing or optimizing the process. The bitline interconnection process proceeds after the sidewalls have been etched clean as described.

摘要翻译： 描述了用于MRAM的制造方法，其中在互连过程开始之前清洁存储元件柱的侧壁上的任何重新沉积的金属。 在实施例中，首先制造柱，然后将介电材料沉积在侧壁上的再沉积金属上的柱上。 电介质材料基本上覆盖任何暴露的金属，因此在随后的蚀刻期间减少再沉积的来源。 然后进行蚀刻以将电介质材料从顶部电极和柱的侧壁向下移动到至少阻挡层的底部边缘。 结果是可能导致在屏障的侧壁上导致电短路的先前重新沉积的金属被去除。 本发明的各种实施方案包括增强或优化方法的方法。 如所描述的那样，在侧壁被蚀刻清洁之后，进行位线互连处理。

公开(公告)号：US09196332B2

公开(公告)日：2015-11-24

申请号：US13161412

申请日：2011-06-15

申请人： Jing Zhang ,  Yuchen Zhou ,  Rajiv Yadav Ranjan ,  Yiming Huai

发明人： Jing Zhang ,  Yuchen Zhou ,  Rajiv Yadav Ranjan ,  Yiming Huai

IPC分类号： H01L29/82 ,  G11C11/16 ,  H01L43/08

CPC分类号： G11C11/161 ,  G11C11/16 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： An STTMRAM element includes a magnetic tunnel junction (MTJ) having a perpendicular magnetic orientation. The MTJ includes a barrier layer, a free layer formed on top of the barrier layer and having a magnetic orientation that is perpendicular and switchable relative to the magnetic orientation of the fixed layer. The magnetic orientation of the free layer switches when electrical current flows through the STTMRAM element. A switching-enhancing layer (SEL), separated from the free layer by a spacer layer, is formed on top of the free layer and has an in-plane magnetic orientation and generates magneto-static fields onto the free layer, causing the magnetic moments of the outer edges of the free layer to tilt with an in-plane component while minimally disturbing the magnetic moment at the center of the free layer to ease the switching of the free layer and to reduce the threshold voltage/current.

摘要翻译： STTMRAM元件包括具有垂直磁方位的磁性隧道结（MTJ）。 MTJ包括阻挡层，形成在阻挡层顶部上并具有相对于固定层的磁性取向垂直和可切换的磁性取向的自由层。 当电流流过STTMRAM元件时，自由层的磁方向切换。 通过间隔层从自由层分离的开关增强层（SEL）形成在自由层的顶部上并且具有面内磁性取向并且在自由层上产生磁静电场，导致磁矩 的自由层的外边缘以面内分量倾斜，同时最小程度地干扰自由层中心处的磁矩，以便自由层的切换和降低阈值电压/电流。

公开(公告)号：US08633720B2

公开(公告)日：2014-01-21

申请号：US13134925

申请日：2011-06-21

申请人： Ioan Tudosa ,  Yuchen Zhou ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Yiming Huai

发明人： Ioan Tudosa ,  Yuchen Zhou ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Yiming Huai

IPC分类号： G01R27/08

CPC分类号： G01R33/093

摘要： High-frequency resonance method is used to measure magnetic parameters of magnetic thin film stacks that show magnetoresistance including MTJs and giant magnetoresistance spin valves. The thin film sample can be unpatterned. Probe tips are electrically connected to the surface of the film (or alternatively one probe tip can be punched into the thin film stack) and voltage measurements are taken while injecting high frequency oscillating current between them to cause a change in electrical resistance when one of the layers in the magnetic film stack changes direction. A measured resonance curve can be determined from voltages at different current frequencies. The damping, related to the width of the resonance curve peak, is determined through curve fitting. In embodiments of the invention a variable magnetic field is also applied to vary the resonance frequency and extract the magnetic anisotropy and/or magnetic saturation of the magnetic layers.

摘要翻译： 高频共振法用于测量显示包括MTJs和巨磁阻自旋阀在内的磁阻的磁性薄膜叠层的磁参数。 薄膜样品可以无图案化。 探针尖端电连接到膜的表面（或者可选地，一个探针尖端可以冲压到薄膜堆叠中）并且在其间注入高频振荡电流时进行电压测量，以在其中的一个 磁膜堆中的层改变方向。 可以从不同电流频率的电压确定测得的谐振曲线。 通过曲线拟合确定与共振曲线峰的宽度相关的阻尼。 在本发明的实施例中，还应用可变磁场来改变谐振频率并提取磁性层的磁各向异性和/或磁饱和。

公开(公告)号：US20130267042A1

公开(公告)日：2013-10-10

申请号：US13443818

申请日：2012-04-10

申请人： Kimihiro Satoh ,  Yiming Huai ,  Yuchen Zhou ,  Jing Zhang ,  Dong Ha Jung ,  Ebrahim Abedifard ,  Rajiv Yadav Ranjan ,  Parviz Keshtbod

发明人： Kimihiro Satoh ,  Yiming Huai ,  Yuchen Zhou ,  Jing Zhang ,  Dong Ha Jung ,  Ebrahim Abedifard ,  Rajiv Yadav Ranjan ,  Parviz Keshtbod

IPC分类号： H01L21/02

CPC分类号： H01L27/222 ,  H01L43/12

摘要： Fabrication methods for MRAM are described wherein any re-deposited metal on the sidewalls of the memory element pillars is cleaned before the interconnection process is begun. In embodiments the pillars are first fabricated, then a dielectric material is deposited on the pillars over the re-deposited metal on the sidewalls. The dielectric material substantially covers any exposed metal and therefore reduces sources of re-deposition during subsequent etching. Etching is then performed to remove the dielectric material from the top electrode and the sidewalls of the pillars down to at least the bottom edge of the barrier. The result is that the previously re-deposited metal that could result in an electrical short on the sidewalls of the barrier is removed. Various embodiments of the invention include ways of enhancing or optimizing the process. The bitline interconnection process proceeds after the sidewalls have been etched clean as described.

摘要翻译： 描述了用于MRAM的制造方法，其中在互连过程开始之前清洁存储元件柱的侧壁上的任何重新沉积的金属。 在实施例中，首先制造柱，然后将介电材料沉积在侧壁上的再沉积金属上的柱上。 电介质材料基本上覆盖任何暴露的金属，因此在随后的蚀刻期间减少再沉积的来源。 然后进行蚀刻以将电介质材料从顶部电极和柱的侧壁向下移动到至少阻挡层的底部边缘。 结果是可能导致在屏障的侧壁上导致电短路的先前重新沉积的金属被去除。 本发明的各种实施方案包括增强或优化方法的方法。 如所描述的那样，在侧壁被蚀刻清洁之后，进行位线互连处理。

公开(公告)号：US20120280339A1

公开(公告)日：2012-11-08

申请号：US13161412

申请日：2011-06-15

申请人： Jing Zhang ,  Yuchen Zhou ,  Rajiv Yadav Ranjan ,  Yiming Huai

发明人： Jing Zhang ,  Yuchen Zhou ,  Rajiv Yadav Ranjan ,  Yiming Huai

IPC分类号： H01L29/82

CPC分类号： G11C11/161 ,  G11C11/16 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： A STTMRAM element includes a magnetic tunnel junction (MTJ) having a perpendicular magnetic orientation. The MTJ includes a barrier layer, a free layer formed on top of the barrier layer and having a magnetic orientation that is perpendicular and switchable relative to the magnetic orientation of the fixed layer. The magnetic orientation of the free layer switches when electrical current flows through the STTMRAM element. A switching-enhancing layer (SEL), separated from the free layer by a spacer layer, is formed on top of the free layer and has an in-plane magnetic orientation and generates magneto-static fields onto the free layer causing the magnetic moments of the outer edges of the free layer to tilt with an in-plane component while minimally disturbing the magnetic moment at the center of the free layer to ease the switching of the free layer and to reduce the threshold voltage/current.

摘要翻译： STTMRAM元件包括具有垂直磁方位的磁性隧道结（MTJ）。 MTJ包括阻挡层，形成在阻挡层顶部上并具有相对于固定层的磁性取向垂直和可切换的磁性取向的自由层。 当电流流过STTMRAM元件时，自由层的磁方向切换。 通过间隔层从自由层分离的开关增强层（SEL）形成在自由层的顶部上并且具有面内磁性取向，并且在自由层上产生磁静电场，导致磁矩 自由层的外边缘与面内部件倾斜，同时最小程度地扰乱自由层中心的磁矩，以便自由层的切换和降低阈值电压/电流。

公开(公告)号：US20130119498A1

公开(公告)日：2013-05-16

申请号：US13737897

申请日：2013-01-09

申请人： Yiming Huai ,  Yuchen Zhou ,  Jing Zhang ,  Roger Klas Malmhall ,  Ioan Tudosa ,  Rajiv Yadav Ranjan

发明人： Yiming Huai ,  Yuchen Zhou ,  Jing Zhang ,  Roger Klas Malmhall ,  Ioan Tudosa ,  Rajiv Yadav Ranjan

IPC分类号： H01L43/02

CPC分类号： H01L43/02 ,  G11C11/161 ,  H01L43/08 ,  H01L43/12

摘要： A spin-torque transfer magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL, the second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.

摘要翻译： 用于存储基于自由层的磁取向的状态的自旋转矩传递磁随机存取存储器（STTMRAM）元件，STTMRAM元件由包括第一垂直增强层（PEL）的第一垂直自由层（PFL） ）。 第一个PFL形成在种子层的顶部。 STTMRAM元件还包括形成在第一PFL的顶部上的阻挡层和具有第二PEL的第二垂直参考层（PRL），第二PRL形成在阻挡层的顶部上。 STTMRAM元件还包括形成在第二PRL的顶部上的封盖层。