公开(公告)号：US5279681A

公开(公告)日：1994-01-18

申请号：US838101

申请日：1992-02-20

申请人： Koichi Matsuda ,  Tsutomu Murakami ,  Jinsho Matsuyama ,  Naoto Okada ,  Toshihiro Yamashita

发明人： Koichi Matsuda ,  Tsutomu Murakami ,  Jinsho Matsuyama ,  Naoto Okada ,  Toshihiro Yamashita

IPC分类号： H01L31/04 ,  H01L31/0224 ,  H01L31/0376 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/065 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/03765 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic device having a semiconductor body with a pin junction, with reduced time-dependent deterioration, high reliability and a high photoelectric conversion efficiency is disclosed.An i-type semiconductor layer constituting the semiconductor body is composed of a layer having a region containing germanium and at least one region not containing germanium. The at least one region not containing germanium is provided at least at the side of a p-semiconductor layer. The maximum composition ratio of germanium in the region containing amorphous silicon and germanium is within a range from 20 to 70 at. %, and the composition ratio of germanium in the above-mentioned region containing amorphous silicon and germanium is zero at the side of an n-semiconductor layer and increases toward the side of the p-semiconductor layer, with the rate of increase being larger at the side of the n-semiconductor layer than at the side of p-semiconductor layer, and the composition ratio of germanium at the center of the i-layer thickness is at least equal to 75 at. % of the maximum composition ratio of germanium.

摘要翻译： 公开了具有半导体本体具有pin结的光电器件，具有降低的时间依赖性劣化，高可靠性和高的光电转换效率。 构成半导体本体的i型半导体层由具有锗的区域和至少一个不含锗的区域的层构成。 至少一个不含锗的区域至少设置在p半导体层的一侧。 含有非晶硅和锗的区域中锗的最大组成比在20至70at的范围内。 ％，并且上述含有非晶硅和锗的区域中的锗的组成比在n半导体层侧为零，并且朝向p半导体层的侧面增加，其增加率在 n半导体层的侧面比p半导体层侧，锗层在i层厚度的中央的组成比至少等于75at。 锗的最大组成比的％。

公开(公告)号：US5279679A

公开(公告)日：1994-01-18

申请号：US838040

申请日：1992-02-21

申请人： Tsutomu Murakami ,  Jinsho Matsuyama ,  Koichi Matsuda ,  Hiroshi Yamamoto ,  Toshihiro Yamashita

发明人： Tsutomu Murakami ,  Jinsho Matsuyama ,  Koichi Matsuda ,  Hiroshi Yamamoto ,  Toshihiro Yamashita

IPC分类号： H01L31/04 ,  H01L31/075 ,  H01L31/20 ,  H01L31/052

CPC分类号： H01L31/076 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： A multi-layered photovoltaic element obtained by stacking at least three cells for photovoltaic generation. A second cell formed adjacent to a light incident-side cell and adapted to receive light which has passed through the light incident-side cell includes an i-type semiconductor layer having a band gap falling within a range of 1.45 eV to 1.60 eV. The i-type semiconductor layer consists essentially of a silicon-germanium-containing amorphous material.

摘要翻译： 通过堆叠至少三个用于光伏发电的电池获得的多层光电元件。 与光入射侧单元相邻并且适于接收通过光入射侧单元的光的第二单元包括带隙落在1.45eV至1.60eV的范围内的i型半导体层。 i型半导体层基本上由含硅 - 锗的无定形材料组成。

公开(公告)号：US5259891A

公开(公告)日：1993-11-09

申请号：US844749

申请日：1992-03-02

申请人： Jinsho Matsuyama ,  Tsutomu Murakami ,  Koichi Matsuda

发明人： Jinsho Matsuyama ,  Tsutomu Murakami ,  Koichi Matsuda

IPC分类号： H01L31/04 ,  B22F3/15 ,  B30B11/00 ,  H01L27/142 ,  H01L31/0336 ,  H01L31/0392 ,  H01L31/05

CPC分类号： H01L31/0749 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/0508 ,  Y02E10/541

摘要： An integrated type solar battery comprises a plurality of solar batteries serially connected. An upper electrode of one of a pair of adjacent solar batteries and a lower electrode of the other solar battery are connected via a lead wire. A groove of the boundary of the adjacent solar batteries is filled with an insulative material to a thickness sufficient to cover edge portions of the adjacent solar batteries. A conductive material is arranged so as to connect an upper portion of the insulative material and the upper electrode of one of the adjacent solar batteries. The lead wire is arranged over the insulative material along the groove portion of the boundary of the adjacent solar batteries so as to be connected to the conductive material. The lead wire is connected to the lower electrode of the other solar battery.

公开(公告)号：US5252142A

公开(公告)日：1993-10-12

申请号：US796394

申请日：1991-11-22

申请人： Jinsho Matsuyama ,  Tsutomu Murakami ,  Koichi Matsuda ,  Hiroshi Yamamoto ,  Toshihiro Yamashita

发明人： Jinsho Matsuyama ,  Tsutomu Murakami ,  Koichi Matsuda ,  Hiroshi Yamamoto ,  Toshihiro Yamashita

IPC分类号： H01L31/04 ,  H01L31/0352 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/065 ,  H01L31/0352 ,  H01L31/075 ,  H01L31/076 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： A pin junction photovoltaic element having an i-type semiconductor layer formed of a variable band gap semiconductor material, said i-type semiconductor layer being positioned between a p-type semiconductor layer having a band gap wider than that of said i-type semiconductor layer and an n-type semiconductor layer having a band gap wider than that of said i-type semiconductor layer, characterized in that said i-type semiconductor layer contains a first region (a) which is positioned on the side of said p-type semiconductor layer and also has a graded band gap, a second region (b) which is adjacent to said first region (a) and has a graded band gap, and a third region (c) which is positioned on the side of said n-type semiconductor layer and also has a graded band gap; said i-type semiconductor layer having a minimum band gap at the boundary between said first region (a) and said second region (b); the thickness of said first region (a) being less than one-half of the total thickness of said i-type semiconductor layer; and the gradient of the band gap of said third region (c) being greater than that of the band gap of said second region (b).

公开(公告)号：US5324364A

公开(公告)日：1994-06-28

申请号：US45176

申请日：1993-04-13

申请人： Koichi Matsuda ,  Masafumi Sano ,  Tsutomu Murakami

发明人： Koichi Matsuda ,  Masafumi Sano ,  Tsutomu Murakami

IPC分类号： H01L31/04 ,  H01L31/0376 ,  H01L31/075

CPC分类号： H01L31/076 ,  H01L31/03765 ,  H01L31/065 ,  H01L31/075 ,  Y02E10/548

摘要： A pin junction photovoltaic device comprising a substrate and a pin junction semiconductor active layer region disposed on said substrate, said pin junction semiconductor active layer region comprising a p-type semiconductor layer composed of a p-type non-single crystalline semiconductor material, an i-type semiconductor layer composed of an i-type non-single crystalline semiconductor material, and an n-type semiconductor layer composed of an n-type non-single crystalline semiconductor material, characterized in that (a) a buffer layer comprising a non-single crystalline silicon semiconductor material substantially free of germanium atoms is interposed between said p-type semiconductor layer and said i-type semiconductor layer, (b) a buffer layer comprising a non-single crystalline silicon semiconductor material substantially free of germanium atoms is interposed between said i-type semiconductor layer and said n-type semiconductor layer, and said i-type semiconductor layer is formed of an amorphous silicon germanium semiconductor material containing the germanium atoms in an amount of 20 to 70 atomic % in the entire region in which the concentration distribution of the germanium atoms in the thickness direction is varied while providing a maximum concentration point.

摘要翻译： 一种pin结光电器件，包括衬底和设置在所述衬底上的pin结半导体有源层区域，所述pin结半导体有源层区域包括由p型非单晶半导体材料构成的p型半导体层，i 由n型非单晶半导体材料构成的n型半导体层以及由n型非单晶半导体材料构成的n型半导体层，其特征在于，（a） 基本上不含锗原子的单晶硅半导体材料介于所述p型半导体层和所述i型半导体层之间，（b）包含基本上不含锗原子的非单晶硅半导体材料的缓冲层介于 所述i型半导体层和所述n型半导体层，并且所述i型半导体层形成为o f是在锗原子在厚度方向上的浓度分布同时提供最大浓度点的整个区域中含有锗原子的含量为20至70原子％的非晶硅锗半导体材料。

公开(公告)号：US08733319B2

公开(公告)日：2014-05-27

申请号：US13064958

申请日：2011-04-28

申请人： Buso Takigawa ,  Umerujan Sawut ,  Tohti Gheyret ,  Norichika Kojima ,  Tsutomu Murakami

发明人： Buso Takigawa ,  Umerujan Sawut ,  Tohti Gheyret ,  Norichika Kojima ,  Tsutomu Murakami

IPC分类号： F02D41/00

CPC分类号： F02D11/106 ,  F02D11/107 ,  F02D31/002

摘要： When control to maintain a constant engine rotation number is executed, the electronic control unit constantly monitors an error of detected throttle position data with respect to a desired throttle control value, executes a first stage of a failure judgment method to judge that a failure of a throttle control system has occurred in a case where an absolute value of the error exceeds a predetermined threshold value continuously for a predetermined time or longer, and executes a second stage of the failure judgment method to judge that a serious failure has occurred in the system in a case where a detected engine rotation number exceeds a predetermined rotation number continuously for a predetermined time or longer, to perform predetermined operations in accordance with the judgment results.

摘要翻译： 当执行维持恒定的发动机转速的控制时，电子控制单元根据期望的节气门控制值持续地监视检测到的节气门位置数据的误差，执行故障判断方法的第一阶段， 在错误的绝对值连续超过预定时间或更长时间的情况下已经发生节气门控制系统，并且执行故障判断方法的第二阶段，以判断系统中发生严重故障 检测到的发动机转速连续超过预定转数的预定时间或更长时间的情况下，根据判断结果进行规定的动作。

公开(公告)号：US07691241B2

公开(公告)日：2010-04-06

申请号：US10998617

申请日：2004-11-30

申请人： Tsutomu Murakami ,  Koji Tsuzuki

发明人： Tsutomu Murakami ,  Koji Tsuzuki

IPC分类号： C25F3/14 ,  C25F7/00

CPC分类号： B23H3/00 ,  B23H3/04 ,  C25F3/14 ,  C25F7/00 ,  H01L31/18

摘要： The present invention relates to a method and apparatus for partial etching or pattern etching using an electrolysis reaction, wherein, conventionally, there was the problem that an etching line could not be finely formed on a cell edge because of apparatus problems concerning alignment accuracy. The present invention provides a method and apparatus with which fine line etching is possible and which can form a line on a cell edge.Provided is a an electrolytic etching method of a substrate which is formed having a subject etching layer on a surface, having the steps of providing a fixed gap from a substrate end surface which is external to an end surface of the substrate for placing a working part of a working electrode and passing current between the substrate and the working electrode.

摘要翻译： 本发明涉及一种使用电解反应进行局部蚀刻或图案蚀刻的方法和装置，其中传统上存在由于关于对准精度的装置问题而在细胞边缘上不能精细地形成蚀刻线的问题。 本发明提供了可以进行细线蚀刻并且可以在单元边缘上形成线的方法和装置。 本发明提供一种基板的电解蚀刻方法，该方法形成在表面上具有被摄体蚀刻层，具有从基板端面提供固定间隙的步骤，该基板端面位于基板的端面外部，用于放置工作部分 的工作电极，并在基板和工作电极之间通过电流。

公开(公告)号：US20080276908A1

公开(公告)日：2008-11-13

申请号：US12000367

申请日：2007-12-12

申请人： Tsutomu Murakami

发明人： Tsutomu Murakami

IPC分类号： F02D41/00

CPC分类号： F02D11/10 ,  F02D35/0053 ,  F02D2200/0406 ,  F02D2200/0414 ,  F02D2400/06

摘要： The present invention provides a throttle apparatus having an electronic control means built-in which uses an engine fuel supply system having a carburetor specification and is arranged for constructing a fuel injection system in accordance with an electronic control.

摘要翻译： 本发明提供一种节气门装置，其具有内置的电子控制装置，其使用具有化油器规格的发动机燃料供应系统，并且被布置用于根据电子控制构造燃料喷射系统。

公开(公告)号：US07287514B2

公开(公告)日：2007-10-30

申请号：US11305194

申请日：2005-12-19

申请人： Masao Kakinuma ,  Tsutomu Murakami

发明人： Masao Kakinuma ,  Tsutomu Murakami

IPC分类号： F02M51/00 ,  F02D41/10 ,  F02M69/28

CPC分类号： F02D41/107

摘要： The invention provides a fuel supply control method and apparatus in which an air fuel ratio does not become rich even if an acceleration and deceleration operation is repeated for a short time in the case that a time lag with respect to a response from a detection of an acceleration state to a fuel amount increase is large, and troubles such as a black smoke generation from an exhaust pipe, an engine stop and the like are not generated. In a fuel supply control method of an internal combustion chamber for increasing an amount of a fuel for acceleration so as to inject from an injection apparatus, at a time of detecting a transient state at an accelerating time or the like on the basis of data such as an opening degree of a throttle valve and/or an air suction pressure, the method inhibits the fuel amount increase for acceleration on the basis of the detection of the transient state, if a total amount of an injection fuel per a unit time is more than a fixed value.

摘要翻译： 本发明提供一种燃料供给控制方法和装置，其中即使在相对于来自检测到的检测的响应的时间滞后的情况下，即使在短时间内重复加减速操作，空燃比也不变浓 燃料量增加的加速状态大，并且不产生诸如从排气管，发动机停止等产生的黑烟等问题。 在用于增加用于加速的燃料量以便从注射装置注入的内燃机的燃料供应控制方法中，在基于加速时间等检测瞬态的时候， 作为节流阀的开度和/或空气吸入压力，如果每单位时间的喷射燃料的总量多，则该方法基于过渡状态的检测来抑制加速燃料量的增加 比固定值。

公开(公告)号：US06180868B2

公开(公告)日：2001-01-30

申请号：US09332104

申请日：1999-06-14

申请人： Takehito Yoshino ,  Tsutomu Murakami ,  Koji Tsuzuki ,  Yoshifumi Takeyama ,  Koichi Shimizu

发明人： Takehito Yoshino ,  Tsutomu Murakami ,  Koji Tsuzuki ,  Yoshifumi Takeyama ,  Koichi Shimizu

IPC分类号： H01L2500

CPC分类号： H01L31/056 ,  H01L31/02 ,  H01L31/0392 ,  H01L31/048 ,  H01L31/049 ,  H02S20/23 ,  H02S50/00 ,  Y02B10/12 ,  Y02E10/52

摘要： A solar cell module or a solar cell module which is provided with a readable and writable memory medium capable of writing in a large quantity of information of said solar cell module and capable of reading out necessary information from said memory medium. A solar cell system comprising said solar cell module or said solar cell module string. A method for supervising said solar cell module or said solar cell module string.

摘要翻译： 一种太阳能电池模块或太阳能电池模块，其具有能够写入所述太阳能电池模块的大量信息并且能够从所述存储介质读出必要信息的可读写的存储介质。 一种太阳能电池系统，包括所述太阳能电池模块或所述太阳能电池组件串。 一种用于监视所述太阳能电池模块或所述太阳能电池模块串的方法。