公开(公告)号：US5279679A

公开(公告)日：1994-01-18

申请号：US838040

申请日：1992-02-21

申请人： Tsutomu Murakami ,  Jinsho Matsuyama ,  Koichi Matsuda ,  Hiroshi Yamamoto ,  Toshihiro Yamashita

发明人： Tsutomu Murakami ,  Jinsho Matsuyama ,  Koichi Matsuda ,  Hiroshi Yamamoto ,  Toshihiro Yamashita

IPC分类号： H01L31/04 ,  H01L31/075 ,  H01L31/20 ,  H01L31/052

CPC分类号： H01L31/076 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： A multi-layered photovoltaic element obtained by stacking at least three cells for photovoltaic generation. A second cell formed adjacent to a light incident-side cell and adapted to receive light which has passed through the light incident-side cell includes an i-type semiconductor layer having a band gap falling within a range of 1.45 eV to 1.60 eV. The i-type semiconductor layer consists essentially of a silicon-germanium-containing amorphous material.

摘要翻译： 通过堆叠至少三个用于光伏发电的电池获得的多层光电元件。 与光入射侧单元相邻并且适于接收通过光入射侧单元的光的第二单元包括带隙落在1.45eV至1.60eV的范围内的i型半导体层。 i型半导体层基本上由含硅 - 锗的无定形材料组成。

公开(公告)号：US5252142A

公开(公告)日：1993-10-12

申请号：US796394

申请日：1991-11-22

申请人： Jinsho Matsuyama ,  Tsutomu Murakami ,  Koichi Matsuda ,  Hiroshi Yamamoto ,  Toshihiro Yamashita

发明人： Jinsho Matsuyama ,  Tsutomu Murakami ,  Koichi Matsuda ,  Hiroshi Yamamoto ,  Toshihiro Yamashita

IPC分类号： H01L31/04 ,  H01L31/0352 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/065 ,  H01L31/0352 ,  H01L31/075 ,  H01L31/076 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： A pin junction photovoltaic element having an i-type semiconductor layer formed of a variable band gap semiconductor material, said i-type semiconductor layer being positioned between a p-type semiconductor layer having a band gap wider than that of said i-type semiconductor layer and an n-type semiconductor layer having a band gap wider than that of said i-type semiconductor layer, characterized in that said i-type semiconductor layer contains a first region (a) which is positioned on the side of said p-type semiconductor layer and also has a graded band gap, a second region (b) which is adjacent to said first region (a) and has a graded band gap, and a third region (c) which is positioned on the side of said n-type semiconductor layer and also has a graded band gap; said i-type semiconductor layer having a minimum band gap at the boundary between said first region (a) and said second region (b); the thickness of said first region (a) being less than one-half of the total thickness of said i-type semiconductor layer; and the gradient of the band gap of said third region (c) being greater than that of the band gap of said second region (b).

公开(公告)号：US5279681A

公开(公告)日：1994-01-18

申请号：US838101

申请日：1992-02-20

申请人： Koichi Matsuda ,  Tsutomu Murakami ,  Jinsho Matsuyama ,  Naoto Okada ,  Toshihiro Yamashita

发明人： Koichi Matsuda ,  Tsutomu Murakami ,  Jinsho Matsuyama ,  Naoto Okada ,  Toshihiro Yamashita

IPC分类号： H01L31/04 ,  H01L31/0224 ,  H01L31/0376 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/065 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/03765 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic device having a semiconductor body with a pin junction, with reduced time-dependent deterioration, high reliability and a high photoelectric conversion efficiency is disclosed.An i-type semiconductor layer constituting the semiconductor body is composed of a layer having a region containing germanium and at least one region not containing germanium. The at least one region not containing germanium is provided at least at the side of a p-semiconductor layer. The maximum composition ratio of germanium in the region containing amorphous silicon and germanium is within a range from 20 to 70 at. %, and the composition ratio of germanium in the above-mentioned region containing amorphous silicon and germanium is zero at the side of an n-semiconductor layer and increases toward the side of the p-semiconductor layer, with the rate of increase being larger at the side of the n-semiconductor layer than at the side of p-semiconductor layer, and the composition ratio of germanium at the center of the i-layer thickness is at least equal to 75 at. % of the maximum composition ratio of germanium.

摘要翻译： 公开了具有半导体本体具有pin结的光电器件，具有降低的时间依赖性劣化，高可靠性和高的光电转换效率。 构成半导体本体的i型半导体层由具有锗的区域和至少一个不含锗的区域的层构成。 至少一个不含锗的区域至少设置在p半导体层的一侧。 含有非晶硅和锗的区域中锗的最大组成比在20至70at的范围内。 ％，并且上述含有非晶硅和锗的区域中的锗的组成比在n半导体层侧为零，并且朝向p半导体层的侧面增加，其增加率在 n半导体层的侧面比p半导体层侧，锗层在i层厚度的中央的组成比至少等于75at。 锗的最大组成比的％。

公开(公告)号：US5259891A

公开(公告)日：1993-11-09

申请号：US844749

申请日：1992-03-02

申请人： Jinsho Matsuyama ,  Tsutomu Murakami ,  Koichi Matsuda

发明人： Jinsho Matsuyama ,  Tsutomu Murakami ,  Koichi Matsuda

IPC分类号： H01L31/04 ,  B22F3/15 ,  B30B11/00 ,  H01L27/142 ,  H01L31/0336 ,  H01L31/0392 ,  H01L31/05

CPC分类号： H01L31/0749 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/0508 ,  Y02E10/541

摘要： An integrated type solar battery comprises a plurality of solar batteries serially connected. An upper electrode of one of a pair of adjacent solar batteries and a lower electrode of the other solar battery are connected via a lead wire. A groove of the boundary of the adjacent solar batteries is filled with an insulative material to a thickness sufficient to cover edge portions of the adjacent solar batteries. A conductive material is arranged so as to connect an upper portion of the insulative material and the upper electrode of one of the adjacent solar batteries. The lead wire is arranged over the insulative material along the groove portion of the boundary of the adjacent solar batteries so as to be connected to the conductive material. The lead wire is connected to the lower electrode of the other solar battery.

公开(公告)号：US06331672B1

公开(公告)日：2001-12-18

申请号：US08807590

申请日：1997-02-27

申请人： Koichi Matsuda ,  Jinsho Matsuyama

发明人： Koichi Matsuda ,  Jinsho Matsuyama

IPC分类号： H01L3100

CPC分类号： H01L31/0236 ,  H01L31/022425 ,  H01L31/022433 ,  H01L31/02366 ,  H01L31/056 ,  Y02E10/52

摘要： A photovoltaic cell comprising a substrate, a back reflector, a transparent conductive layer, and a photoelectric conversion layer, wherein the transparent conductive layer has holes on the surface, is provided. Additionally, a photovoltaic cell comprising a substrate, a back reflector, a transparent conductive layer, and a photoelectric conversion layer, wherein diffuse reflectance of the back reflector is 3 to 50%, is provided. According to the above-described structures, processability, yield and reliability of the photovoltaic cell can be improved, while photoelectric conversion efficiency is maintained at a high level due to back-surface diffuse reflection.

摘要翻译： 提供了一种包括基板，后反射器，透明导电层和光电转换层的光电池，其中透明导电层在表面上具有孔。 此外，提供了包括基板，后反射器，透明导电层和光电转换层的光伏电池，其中后反射器的漫反射率为3至50％。 根据上述结构，可以提高光伏电池的加工性，成品率和可靠性，同时由于背面漫反射，光电转换效率保持在高水平。

公开(公告)号：US06184456B2

公开(公告)日：2001-02-06

申请号：US08985312

申请日：1997-12-04

申请人： Jinsho Matsuyama ,  Koichi Matsuda

发明人： Jinsho Matsuyama ,  Koichi Matsuda

IPC分类号： H01L3100

CPC分类号： H01L31/0368 ,  H01L31/056 ,  Y02E10/52

摘要： A photovoltaic device of the present invention has a non-single-crystal semiconductor. A layer underlying the non-single-crystal semiconductor has a polycrystalline structure. Individual grains of the polycrystal exposed in the surface of the underlying layer have smooth surfaces. The surface of the underlying layer has a step along the grain boundaries of the polycrystal, or a protrusion or recess at the grain boundaries. Alternatively, polycrystal grains having rough surfaces and polycrystal grains having smooth surfaces commonly exist in the surface of the polycrystalline layer. The polycrystalline layer may be a substrate of the photovoltaic device. The present invention, by virtue of the use of such a polycrystalline layer, provides a highly reliable and efficient thin-film photovoltaic device which enhances light absorption by the semiconductor layer and which can be produced at a high yield even at a practically adoptable low cost, while eliminating deficiencies of known arts in regard to workability, yield and durability.

摘要翻译： 本发明的光电器件具有非单晶半导体。 非单晶半导体的下面的层具有多晶结构。 暴露在下层的表面的多晶体的单个晶粒具有平滑的表面。 下层的表面沿着多晶体的晶界或在晶界处的突起或凹陷具有台阶。 或者，具有粗糙表面的多晶粒和具有平滑表面的多晶粒通常存在于多晶层的表面中。 多晶层可以是光伏器件的衬底。 本发明通过使用这种多晶层，提供了高度可靠且高效的薄膜光伏器件，其增强了半导体层的光吸收，并且即使在实际可采用的低成本下也可以以高产率生产 同时消除已知艺术在可加工性，产量和耐久性方面的缺陷。

公开(公告)号：US5439533A

公开(公告)日：1995-08-08

申请号：US337195

申请日：1994-11-07

申请人： Keishi Saito ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Yuzo Koda ,  Naoto Okada

发明人： Keishi Saito ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Yuzo Koda ,  Naoto Okada

IPC分类号： H01L31/04 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/076 ,  H01L31/20 ,  H01L31/18

CPC分类号： H01L31/03921 ,  H01L31/075 ,  H01L31/076 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S136/293

摘要： An object of the present invention is to provide a photovoltaic device and a method of producing the photovoltaic device which can prevent recombination of photo-excited carriers and which permits increases in the open circuit voltage and the carrier range. The photovoltaic device of the present invention has a laminate structure composed of at least a p-type layer of a silicon non-single crystal semiconductor, a photoactive layer having a plurality of i-type layers, and an n-type layer. The photoactive layer has a laminate structure composed of a first i-type layer deposited on the side of the n-type layer by a microwave plasma CVD process, and a second i-type layer deposited on the side of said the p-type layer by an RF plasma CVD process. The first i-type layer deposited by the microwave plasma CVD process contains at least silicon and carbon atoms, and has a minimum band gap between the center thereof and the p-type layer, and the second i-type layer deposited by the RF plasma CVD process contains at least silicon atoms and has a thickness of 30 nm or less.

摘要翻译： 本发明的目的是提供一种能够防止光激发载流子复合并且允许开路电压和载流子范围增加的光电器件及其制造方法。 本发明的光电器件具有至少由非硅单晶半导体的p型层，具有多个i型层的光活性层和n型层构成的层叠结构。 光敏层具有由微波等离子体CVD工艺在n型层侧沉积的第一i型层和沉积在所述p型层侧的第二i型层构成的层叠结构 通过RF等离子体CVD工艺。 通过微波等离子体CVD法沉积的第一i型层至少包含硅和碳原子，并且在其中心和p型层之间具有最小的带隙，并且由RF等离子体沉积的第二i型层 CVD工艺至少含有硅原子，其厚度为30nm以下。

公开(公告)号：US6072117A

公开(公告)日：2000-06-06

申请号：US806315

申请日：1997-02-26

申请人： Jinsho Matsuyama ,  Koichi Matsuda

发明人： Jinsho Matsuyama ,  Koichi Matsuda

IPC分类号： H01L31/0224 ,  H01L31/0236 ,  H01L31/0392 ,  H01L31/052 ,  H01L31/20 ,  H01L25/00

CPC分类号： H01L31/03928 ,  H01L31/022466 ,  H01L31/02363 ,  H01L31/0392 ,  H01L31/03921 ,  H01L31/03925 ,  H01L31/056 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/541 ,  Y02P70/521

摘要： A photovoltaic device comprising an opaque substrate having an irregular surface structure comprising a plurality of linear irregularities or recesses arranged therein and a photoelectric conversion layer formed on said irregular surface structure of said substrate, wherein said plurality of linear irregularities or recesses have a center line average roughness Ra(X) of 15 nm to 300 nm when scanned in a direction parallel to the linear irregularities or recesses, a center line average roughness Ra(Y) of 20 nm to 600 nm when scanned in a direction perpendicular to the linear irregularities or recesses, and a Ra(X)/Ra(Y) ratio of 0.8 or less.

摘要翻译： 一种光电器件，包括具有不规则表面结构的不透明衬底，所述不透明衬底包括布置在其中的多个线性不规则或凹槽，以及形成在所述衬底的所述不规则表面结构上的光电转换层，其中所述多个线性不规则或凹陷具有中心线平均值 当沿与线性凹凸或凹槽平行的方向扫描时，粗糙度Ra（X）为15nm至300nm，当沿垂直于线性不规则的方向扫描时的中心线平均粗糙度Ra（Y）为20nm至600nm，或 凹部，Ra（X）/ Ra（Y）比为0.8以下。

公开(公告)号：US5324364A

公开(公告)日：1994-06-28

申请号：US45176

申请日：1993-04-13

申请人： Koichi Matsuda ,  Masafumi Sano ,  Tsutomu Murakami

发明人： Koichi Matsuda ,  Masafumi Sano ,  Tsutomu Murakami

IPC分类号： H01L31/04 ,  H01L31/0376 ,  H01L31/075

CPC分类号： H01L31/076 ,  H01L31/03765 ,  H01L31/065 ,  H01L31/075 ,  Y02E10/548

摘要： A pin junction photovoltaic device comprising a substrate and a pin junction semiconductor active layer region disposed on said substrate, said pin junction semiconductor active layer region comprising a p-type semiconductor layer composed of a p-type non-single crystalline semiconductor material, an i-type semiconductor layer composed of an i-type non-single crystalline semiconductor material, and an n-type semiconductor layer composed of an n-type non-single crystalline semiconductor material, characterized in that (a) a buffer layer comprising a non-single crystalline silicon semiconductor material substantially free of germanium atoms is interposed between said p-type semiconductor layer and said i-type semiconductor layer, (b) a buffer layer comprising a non-single crystalline silicon semiconductor material substantially free of germanium atoms is interposed between said i-type semiconductor layer and said n-type semiconductor layer, and said i-type semiconductor layer is formed of an amorphous silicon germanium semiconductor material containing the germanium atoms in an amount of 20 to 70 atomic % in the entire region in which the concentration distribution of the germanium atoms in the thickness direction is varied while providing a maximum concentration point.

摘要翻译： 一种pin结光电器件，包括衬底和设置在所述衬底上的pin结半导体有源层区域，所述pin结半导体有源层区域包括由p型非单晶半导体材料构成的p型半导体层，i 由n型非单晶半导体材料构成的n型半导体层以及由n型非单晶半导体材料构成的n型半导体层，其特征在于，（a） 基本上不含锗原子的单晶硅半导体材料介于所述p型半导体层和所述i型半导体层之间，（b）包含基本上不含锗原子的非单晶硅半导体材料的缓冲层介于 所述i型半导体层和所述n型半导体层，并且所述i型半导体层形成为o f是在锗原子在厚度方向上的浓度分布同时提供最大浓度点的整个区域中含有锗原子的含量为20至70原子％的非晶硅锗半导体材料。

公开(公告)号：US06812499B2

公开(公告)日：2004-11-02

申请号：US09982845

申请日：2001-10-22

申请人： Takaharu Kondo ,  Makoto Higashikawa ,  Masafumi Sano ,  Koichi Matsuda

发明人： Takaharu Kondo ,  Makoto Higashikawa ,  Masafumi Sano ,  Koichi Matsuda

IPC分类号： H01L3300

CPC分类号： H01L31/075 ,  H01L31/03682 ,  H01L31/03767 ,  H01L31/076 ,  H01L31/1804 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A silicon based film is provided which comprises a crystal phase formed on a substrate with a surface shape represented by a function f, wherein the silicon-based film is formed on a substrate with a surface shape having a standard deviation of an inclination arctan (df/dx) from 15° to 55° within the range of a sampling length dx from 20 nm to 100 nm. Raman scattering strength resulting from an amorphous component in the silicon-based film is not more than a Raman scattering strength resulting from a crystalline component. A difference between a spacing in a direction parallel to a principal surface of the substrate and a spacing of a single crystal silicon is within the range of 0.2% to 1.0% with regard to the spacing of the single crystal silicon.

摘要翻译： 提供了一种硅基膜，其包括形成在具有由功能f表示的表面形状的基板上的晶相，其中所述硅基膜形成在具有倾斜度的标准偏差（df）的表面形状的基板上 / dx）在20nm至100nm的采样长度dx的范围内从15°至55°。 由硅基膜中的无定形成分产生的拉曼散射强度不大于由结晶成分产生的拉曼散射强度。 相对于单晶硅的间隔，平行于基板的主面的方向的间隔和单晶硅的间隔之间的差在0.2％〜1.0％的范围内。